TC74AC257FN

TC74AC257,258P/F/FN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC257P,TC74AC257F,TC74AC257FN TC74AC258P,TC74AC258F,TC74AC258FN TC74AC257P/F/FN 2-Channel Multiplexer (3-state) TC74AC258P/F/FN 2-Channel Multiplexer (3-state, inverting) The TC74AC257 and TC74AC258 are advanced high speed CMOS MULTIPLEXERs fabricated with silicon gate and double-layer metal wiring C2MOS technology. They achieve the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Each is composed of four independent 2-channel multiplexers with common SELECT and OUTPUT ENABLE ( OE ). The TC74AC257 is a non-inverting multiplexer, while the TC74AC258 is an inverting. If OE is set low, the outputs are held in a high-impedance state. When SELECT is set low, “A” data inputs are enabled. Conversely, when SELECT is high, “B” data inputs are enabled. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Note: xxxFN (JEDEC SOP) is not available in Japan. TC74AC257P, TC74AC258P TC74AC257F, TC74AC258F Features • • • • High speed: tpd = 3.6 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 8 μA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω • • • transmission lines. ∼ Balanced propagation delays: tpLH − tpHL Wide operating voltage range: VCC (opr) = 2~5.5 V Pin and function compatible with 74F257/258 TC74AC257FN, TC74AC258FN Weight DIP16-P-300-2.54A SOP16-P-300-1.27A SOL16-P-150-1.27 : 1.00 g (typ.) : 0.18 g (typ.) : 0.13 g (typ.) 1 2007-10-01 TC74AC257,258P/F/FN Pin Assignment TC74AC257 TC74AC258 IEC Logic Symbol TC74AC257 TC74AC258 Truth Table Inputs Outputs A B Y (257) OE H L L L L SELECT Y (258) Z H L H L X L L H H X L H X X X X X L H Z L H L H X: Don’t care Z: High impedance 2 2007-10-01 TC74AC257,258P/F/FN System Diagram TC74AC257 TC74AC258 Absolute Maximum Ratings (Note 1) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg Rating −0.5~7.0 −0.5~VCC + 0.5 −0.5~VCC + 0.5 ±20 ±50 ±50 ±100 Unit V V V mA mA mA mA mW °C 500 (DIP) (Note 2)/180 (SOP) −65~150 Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = −40~65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be applied up to 300 mW. 3 2007-10-01 TC74AC257,258P/F/FN Operating Ranges (Note) Characteristics Supply voltage Input voltage Output voltage Operating temperature Input rise and fall time Symbol VCC VIN VOUT Topr dt/dV Rating 2.0~5.5 0~VCC 0~VCC −40~85 Unit V V V °C ns/V 0~100 (VCC = 3.3 ± 0.3 V) 0~20 (VCC = 5 ± 0.5 V) Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Electrical Characteristics DC Characteristics Ta = 25°C Characteristics Symbol Test Condition VCC (V) 2.0 High-level input voltage VIH ⎯ Ta = −40~85°C Max ⎯ ⎯ ⎯ Min 1.50 2.10 3.85 ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Min 1.50 2.10 3.85 ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ Unit 3.0 5.5 2.0 V 0.50 0.90 1.65 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.50 0.90 1.65 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Low-level input voltage VIL ⎯ 3.0 5.5 2.0 V 1.9 2.9 4.4 2.58 3.94 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.0 3.0 4.5 ⎯ ⎯ ⎯ 1.9 2.9 4.4 2.48 3.80 3.85 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ IOH = −50 μA High-level output voltage VOH VIN = VIH or IOH = −4 mA VIL IOH = −24 mA IOH = −75 mA IOL = 50 μA Low-level output voltage VOL VIN = VIH or IOL = 12 mA VIL IOL = 24 mA IOL = 75 mA 3-state output off-state current Input leakage current Quiescent supply current IOZ IIN ICC VIN = VIH or VIL VOUT = VCC or GND VIN = VCC or GND VIN = VCC or GND (Note) (Note) 3.0 4.5 3.0 4.5 5.5 2.0 3.0 4.5 3.0 4.5 5.5 5.5 5.5 5.5 V 0.0 0.0 0.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.1 0.1 0.1 0.36 0.36 ⎯ ±0.5 ±0.1 0.1 0.1 0.1 0.44 0.44 1.65 ±5.0 ±1.0 μA μA μA V 8.0 80.0 Note: This spec indicates the capability of driving 50 Ω transmission lines. One output should be tested at a time for a 10 ms maximum duration. 4 2007-10-01 TC74AC257,258P/F/FN AC Characteristics (CL = 50 pF, RL = 500 Ω, input: tr = tf = 3 ns) Characteristics Propagation delay time (A, B-Y, Y ) Propagation delay time (SELECT-Y, Y ) Output enable time Symbol Test Condition Ta = 25°C VCC (V) 3.3 ± 0.3 5.0 ± 0.5 3.3 ± 0.3 5.0 ± 0.5 3.3 ± 0.3 5.0 ± 0.5 3.3 ± 0.3 5.0 ± 0.5 ⎯ ⎯ ⎯ Ta = −40~85°C Max 14.3 7.5 17.2 9.1 14.0 7.9 9.6 7.9 10 ⎯ ⎯ Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. 7.0 4.7 8.6 5.5 7.3 5.0 5.6 5.1 5 10 28 Min 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 ⎯ ⎯ ⎯ Max 16.3 8.5 19.6 10.4 16.0 9.0 11.0 9.0 10 ⎯ ⎯ Unit tpLH tpHL tpLH tpHL tpZL tpHZ tpLZ tpHZ CIN COUT CPD (Note) ⎯ ns ⎯ ns ⎯ ns Output disable time Input capacitance Output capacitance Power dissipation capacitance ⎯ ns pF pF pF Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD･VCC･fIN + ICC/4 (per bit) 5 2007-10-01 TC74AC257,258P/F/FN Package Dimensions Weight: 1.00 g (typ.) 6 2007-10-01 TC74AC257,258P/F/FN Package Dimensions Weight: 0.18 g (typ.) 7 2007-10-01 TC74AC257,258P/F/FN Package Dimensions (Note) Note: This package is not available in Japan. Weight: 0.13 g (typ.) 8 2007-10-01 TC74AC257,258P/F/FN RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. 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Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01