TC74ACT244P

TC74ACT240,244P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74ACT240P,TC74ACT240F, TC74ACT240FT TC74ACT244P,TC74ACT244F, TC74ACT244FT Octal Bus Buffer TC74ACT240P/F/FT TC74ACT244P/F/FT Inverted, 3-State Outputs Non-Inverted, 3-State Outputs TC74ACT240P, TC74ACT244P The TC74ACT240 and 244 are advanced high speed CMOS OCTAL BUS BUFFERs fabricated with silicon gate and double-layer metal wiring C2MOS technology. They achieve the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The 74ACT240 is an inverting 3-state buffer while the 74ACT244 is non-inverting. Both devices have two active-low output enables. These devices are designed to be used in such applications as 3-state memory address drivers. All inputs are equipped with protection circuits against static discharge or transient excess voltage. TC74ACT240F, TC74ACT244F TC74ACT240FT, TC74ACT244FT Features • • • • High speed: tpd = 5.0 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 8 μA (max) at Ta = 25°C Compatible with TTL outputs: VIL = 0.8 V (max) VIH = 2.0 V (min) Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines. ∼ Balanced propagation delays: tpLH − tpHL Pin and function compatible with 74F240/244 Weight DIP20-P-300-2.54A SOP20-P-300-1.27A TSSOP20-P-0044-0.65A • • : 1.30 g (typ.) : 0.22 g (typ.) : 0.08 g (typ.) 1 2007-10-01 TC74ACT240,244P/F/FT Pin Assignment TC74ACT240 1G 1A1 2Y 4 1A2 2Y3 1A3 2Y 2 1A4 2Y1 1 2 3 4 5 6 7 8 9 20 19 18 17 TC74ACT244 VCC 2G 1Y1 1G 1A1 2Y4 1A2 2Y3 1A3 2Y2 1A4 2Y1 1 2 3 4 5 6 7 8 9 20 19 18 17 16 15 14 13 12 11 (top view) VCC 2G 1Y1 2A4 1Y2 2A3 1Y3 2A2 1Y4 2A1 2A4 1Y 2 2A3 1Y3 2A2 1Y 4 2A1 16 15 14 13 12 11 (top view) GND 10 GND 10 IEC Logic Symbol TC74ACT240 1G 1A1 1A2 1A3 1A4 (1) (2) (4) (6) (8) EN (18) (16) (14) (12) 1Y1 1Y 2 1Y3 1Y 4 1G 1A1 1A2 1A3 1A4 (1) (2) (4) (6) (8) TC74ACT244 EN (18) (16) (14) (12) 1Y1 1Y2 1Y3 1Y4 2G 2A1 2A2 2A3 2A4 (19) (11) (13) (15) (17) EN (9) (7) (5) (3) 2Y1 2Y 2 2Y3 2Y 4 2G 2A1 2A2 2A3 2A4 (19) (11) (13) (15) (17) EN (9) (7) (5) (3) 2Y1 2Y2 2Y3 2Y4 Truth Table Inputs Outputs G L L H An L H X Yn (244) L H Z Y n (240) H L Z X: Don’t care Z: High impedance 2 2007-10-01 TC74ACT240,244P/F/FT Absolute Maximum Ratings (Note 1) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg Rating −0.5 to 7.0 −0.5 to VCC + 0.5 −0.5 to VCC + 0.5 ±20 ±50 ±50 ±200 500 (DIP) (Note 2)/180 (SOP/TSSOP) −65 to 150 Unit V V V mA mA mA mA mW °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be applied up to 300 mW. Operating Ranges (Note) Characteristics Supply voltage Input voltage Output voltage Operating temperature Input rise and fall time Symbol VCC VIN VOUT Topr dt/dV Rating 4.5 to 5.5 0 to VCC 0 to VCC −40 to 85 0 to 10 Unit V V V °C ns/V Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. 3 2007-10-01 TC74ACT240,244P/F/FT Electrical Characteristics DC Characteristics Test Condition Characteristics Symbol VCC (V) ― 4.5 to 5.5 4.5 to 5.5 4.5 4.5 (Note) 5.5 4.5 4.5 (Note) 5.5 5.5 5.5 5.5 5.5 Min 2.0 Ta = 25°C Typ. ― Max ― Ta = −40 to 85°C Min 2.0 Max ― V Unit High-level input voltage Low-level input voltage VIH VIL ― IOH = −50 μA VIN = VIH or IOH = −24 mA VIL IOH = −75 mA IOL = 50 μA VIN = VIH or IOL = 24 mA VIL IOL = 75 mA VIN = VIH or VIL VOUT = VCC or GND VIN = VCC or GND VIN = VCC or GND Per input: VIN = 3.4 V Other input: VCC or GND ― 4.4 3.94 ― ― ― ― ― ― ― ― ― 4.5 ― ― 0.0 ― ― ― ― ― ― 0.8 ― ― ― 0.1 0.36 ― ±0.5 ±0.1 8.0 1.35 ― 4.4 3.80 3.85 ― ― ― ― ― ― ― 0.8 ― ― ― 0.1 0.44 1.65 ±5.0 ±1.0 80.0 1.5 V High-level output voltage VOH V Low-level output voltage VOL V 3-state output off-state current Input leakage current Quiescent supply current IOZ IIN ICC IC μA μA μA mA Note: This spec indicates the capability of driving 50 Ω transmission lines. One output should be tested at a time for a 10 ms maximum duration. AC Characteristics (CL = 50 pF, RL = 500 Ω, input: tr = tf = 3 ns) Characteristics Symbol tpLH tpHL tpZL tpZH tpLZ tpHZ CIN COUT CPD TC74ACT240 Test Condition VCC (V) Propagation delay time Output enable time ― 5.0 ± 0.5 Min ― Ta = 25°C Typ. 5.7 Max 8.0 Ta = −40 to 85°C Min 1.0 Max 9.0 ns Unit ― 5.0 ± 0.5 ― 6.0 9.0 1.0 10.5 ns Output disable time Input capacitance Output capacitance Power dissipation capacitance ― ― ― 5.0 ± 0.5 ― ― ― ― ― 5.9 5 10 25 29 8.5 10 ― ― ― 1.0 ― ― ― ― 10.0 10 ― ― ― ns pF pF pF (Note) TC74ACT244 Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD·VCC·fIN + ICC/8 (per bit) 4 2007-10-01 TC74ACT240,244P/F/FT Package Dimensions Weight: 1.30 g (typ.) 5 2007-10-01 TC74ACT240,244P/F/FT Package Dimensions Weight: 0.22 g (typ.) 6 2007-10-01 TC74ACT240,244P/F/FT Package Dimensions Weight: 0.08 g (typ.) 7 2007-10-01 TC74ACT240,244P/F/FT RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. 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Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01