TC74HC257AFN

TC74HC257AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC257AP,TC74HC257AF,TC74HC257AFN Quad 2-Channel Multiplexer (3-state) The TC74HC257A is high speed CMOS MULTIPLEXER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. It is composed of four independent 2-channel multiplexers with common SELECT and OUTPUT ENABLE ( OE ). If OE is set low, the outputs are held in a high-impedance state. When SELECT is set low, “A” data inputs are enabled. Conversely, when SELECT is high, “B” data inputs are enabled. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Note: xxxFN (JEDEC SOP) is not available in Japan. TC74HC257AP TC74HC257AF Features • • • • • • High speed: tpd = 10 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 4 μA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) Output drive capability: 15 LSTTL loads Symmetrical output impedance: |IOH| = IOL = 6 mA (min) ∼ Balanced propagation delays: tpLH − tpHL Wide operating voltage range: VCC (opr) = 2~6 V Pin and function compatible with 74LS257 TC74HC257AFN • • Pin Assignment Weight DIP16-P-300-2.54A SOP16-P-300-1.27A SOL20-P-150-1.27 : 1.00 g (typ.) : 0.18 g (typ.) : 0.13 g (typ.) 1 2007-10-01 TC74HC257AP/AF/AFN IEC Logic Symbol Truth Table Inputs OE Output A X L H X X B X X X L H Y Z L H L H SELECT X L L H H H L L L L X: Don’t care Z: High impedance Absolute Maximum Ratings (Note 1) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg Rating −0.5~7 −0.5~VCC + 0.5 −0.5~VCC + 0.5 ±20 ±20 ±35 ±75 500 (DIP) (Note 2)/180 (SOP) −65~150 Unit V V V mA mA mA mA mW °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = −40~65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be applied until 300 mW. 2 2007-10-01 TC74HC257AP/AF/AFN Operating Ranges (Note) Characteristics Supply voltage Input voltage Output voltage Operating temperature Symbol VCC VIN VOUT Topr Rating 2~6 0~VCC 0~VCC −40~85 0~1000 (VCC = 2.0 V) Input rise and fall time tr, tf 0~500 (VCC = 4.5 V) 0~400 (VCC = 6.0 V) ns Unit V V V °C Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Electrical Characteristics DC Characteristics Test Condition Characteristics Symbol VCC (V) 2.0 High-level input voltage VIH ⎯ 4.5 6.0 2.0 Low-level input voltage VIL ⎯ 4.5 6.0 2.0 High-level output voltage VIN = VIH or VIL IOH = −20 μA IOH = −6 mA IOH = −7.8 mA IOL = 20 μA IOL = 6 mA IOL = 7.8 mA 3-state off leak current Input leakage current Quiescent supply current IOZ IIN ICC VIN = VIH or VIL VOUT = VCC or GND VIN = VCC or GND VIN = VCC or GND 4.5 6.0 4.5 6.0 2.0 Low-level output voltage VIN = VIH or VIL 4.5 6.0 4.5 6.0 6.0 6.0 6.0 Min 1.50 3.15 4.20 ⎯ ⎯ ⎯ 1.9 4.4 5.9 4.18 5.68 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Ta = 25°C Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.0 4.5 6.0 4.31 5.80 0.0 0.0 0.0 0.17 0.18 ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ 0.50 1.35 1.80 ⎯ ⎯ ⎯ ⎯ ⎯ 0.1 0.1 0.1 0.26 0.26 ±0.5 ±0.1 4.0 Ta = −40~85°C Min 1.50 3.15 4.20 ⎯ ⎯ ⎯ 1.9 4.4 5.9 4.13 5.63 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ 0.50 1.35 1.80 ⎯ ⎯ ⎯ ⎯ ⎯ 0.1 0.1 0.1 0.33 0.33 ±5.0 ±1.0 40.0 μA μA μA V V V V Unit VOH VOL 3 2007-10-01 TC74HC257AP/AF/AFN AC Characteristics (input: tr = tf = 6 ns) Test Condition Characteristics Symbol CL (pF) ⎯ 50 VCC (V) 2.0 4.5 6.0 2.0 50 Propagation delay time (A, B-Y, Y ) 4.5 6.0 Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Ta = 25°C Typ. 20 6 5 45 13 11 Max 60 12 10 100 20 17 Ta = −40~85°C Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max 75 15 13 125 25 21 ns Unit Output transition time tTLH tTHL tpLH tpHL ⎯ 2.0 150 4.5 6.0 2.0 50 4.5 6.0 2.0 150 4.5 6.0 2.0 50 4.5 6.0 2.0 150 4.5 6.0 62 18 15 45 13 11 62 18 15 40 12 10 57 17 14 28 14 13 5 10 47 140 28 24 100 20 17 140 28 24 110 22 19 150 30 26 140 28 24 10 ⎯ ⎯ 175 35 30 125 25 21 175 35 30 140 28 24 190 38 33 175 35 30 10 ⎯ ⎯ ns Propagation delay time (SELECT-Y, Y ) tpLH tpHL ⎯ ns 3-state output enable time tpZL tpZH RL = 1kΩ ns 3-state output disable time Input capacitance Output capacitance Power dissipation capacitance tpLZ tpHZ CIN COUT CPD (Note) 2.0 RL = 1kΩ ⎯ ⎯ ⎯ 50 4.5 6.0 ns pF pF pF Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD･VCC･fIN + ICC/4 (per bit) 4 2007-10-01 TC74HC257AP/AF/AFN Package Dimensions Weight: 1.00 g (typ.) 5 2007-10-01 TC74HC257AP/AF/AFN Package Dimensions Weight: 0.18 g (typ.) 6 2007-10-01 TC74HC257AP/AF/AFN Package Dimensions (Note) Note: This package is not available in Japan. Weight: 0.13 g (typ.) 7 2007-10-01 TC74HC257AP/AF/AFN RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. 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Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01