TC74HC368AP

TC74HC367,368AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC367AP,TC74HC367AF,TC74HC367AFN TC74HC368AP,TC74HC368AF,TC74HC368AFN Hex Bus Buffer TC74HC367AP/AF/AFN TC74HC368AP/AF/AFN Non-Inverted (3-state) Inverted (3-state) Note: xxxFN (JEDEC SOP) is not available in Japan. TC74HC367AP, TC74HC368AP The TC74HC367A and TC74HC368A are high speed CMOS 3-STATE BUS BUFFERs fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. They contain six buffers; four buffers are controlled by an enable input ( G1 ), and the other two buffers are controlled by another enable input ( G2 ). The outputs of each buffer group are enabled when G1 and/or G2 inputs are held low; if held high, these outputs are in a high impedance state. The TC74HC367A is a non-inverting output type, while the TC74HC368A is an inverting output type. All inputs are equipped with protection circuits against static discharge or transient excess voltage. TC74HC367AF, TC74HC368AF Features • • • • • • • • High speed: tpd = 11 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 4 μA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) Output drive capability: 15 LSTTL loads Symmetrical output impedance: |IOH| = IOL = 6 mA ∼ Balanced propagation delays: tpLH − tpHL Wide operating voltage range: VCC (opr) = 2 to 6 V Pin and function compatible with 74LS367/368 TC74HC367AFN, TC74HC368AFN Weight DIP16-P-300-2.54A SOP16-P-300-1.27A SOL16-P-150-1.27 : 1.00 g (typ.) : 0.18 g (typ.) : 0.13 g (typ.) 1 2007-10-01 TC74HC367,368AP/AF/AFN Pin Assignment TC74HC367A TC74HC368A IEC Logic Symbol TC74HC367A TC74HC368A Truth Table Inputs Outputs G L L H An L H X Y (367A) L H Z Y (368A) H L Z X: Don’t care Z: High impedance 2 2007-10-01 TC74HC367,368AP/AF/AFN Absolute Maximum Ratings (Note 1) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg Rating −0.5 to 7 −0.5 to VCC + 0.5 −0.5 to VCC + 0.5 ±20 ±20 ±35 ±75 Unit V V V mA mA mA mA mW °C 500 (DIP) (Note 2)/180 (SOP) −65 to 150 Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be applied until 300 mW. Operating Ranges (Note) Characteristics Supply voltage Input voltage Output voltage Operating temperature Symbol VCC VIN VOUT Topr Rating 2 to 6 0 to VCC 0 to VCC −40 to 85 Unit V V V °C 0 to 1000 (VCC = 2.0 V) Input rise and fall time tr, tf 0 to 500 (VCC = 4.5 V) 0 to 400 (VCC = 6.0 V) ns Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. 3 2007-10-01 TC74HC367,368AP/AF/AFN Electrical Characteristics DC Characteristics Test Condition Characteristics Symbol VCC (V) 2.0 High-level input voltage VIH ⎯ Ta = 25°C Min 1.50 3.15 4.20 ⎯ ⎯ ⎯ Ta = −40 to 85°C Max ⎯ ⎯ ⎯ Unit Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Min 1.50 3.15 4.20 ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ 4.5 6.0 2.0 V 0.50 1.35 1.80 ⎯ ⎯ ⎯ ⎯ ⎯ 0.50 1.35 1.80 ⎯ ⎯ ⎯ ⎯ ⎯ Low-level input voltage VIL ⎯ 4.5 6.0 2.0 V 1.9 4.4 5.9 4.18 5.68 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.0 4.5 6.0 4.31 5.80 0.0 0.0 0.0 0.17 0.18 ⎯ ⎯ ⎯ 1.9 4.4 5.9 4.13 5.63 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ High-level output voltage VOH VIN = VIH or VIL IOH = −20 μA IOH = −6 mA IOH = −7.8 mA IOL = 20 μA IOL = 6 mA IOL = 7.8 mA 4.5 6.0 4.5 6.0 2.0 V 0.1 0.1 0.1 0.26 0.26 ±0.5 ±0.1 0.1 0.1 0.1 0.33 0.33 ±5.0 ±1.0 μA μA μA Low-level output voltage VOL VIN = VIH or VI L 4.5 6.0 4.5 6.0 6.0 6.0 6.0 V 3-state output off-state current Input leakage current Quiescent supply current IOZ IIN ICC VIN = VIH or VIL VOUT = VCC or GND VIN = VCC or GND VIN = VCC or GND 4.0 40.0 4 2007-10-01 TC74HC367,368AP/AF/AFN AC Characteristics (input: tr = tf = 6 ns) Test Condition Characteristics Symbol CL (pF) ⎯ Ta = 25°C VCC (V) 2.0 50 4.5 6.0 2.0 50 4.5 6.0 2.0 Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Ta = −40 to 85°C Max 60 12 10 95 19 16 130 26 22 120 24 20 160 32 27 120 24 20 10 ⎯ ⎯ ⎯ Unit Typ. 25 7 6 36 12 10 40 16 14 36 12 10 40 16 14 35 15 13 5 10 36 30 Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max 75 15 13 120 24 20 165 33 28 150 30 26 200 40 34 150 30 26 10 ⎯ ⎯ ⎯ Output transition time tTLH tTHL ns Propagation delay time tpLH tpHL ⎯ ns 150 4.5 6.0 2.0 50 Output enable time tpZL tpZH RL = 1 kΩ 150 4.5 6.0 2.0 4.5 6.0 ns Output disable time tpLZ tpHZ CIN COUT CPD 2.0 RL = 1 kΩ ⎯ ⎯ 50 4.5 6.0 ns Input capacitance Output capacitance Power dissipation capacitance pF pF pF TC74HC367A (Note) TC74HC368A Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD･VCC･fIN + ICC/6 (per bit) 5 2007-10-01 TC74HC367,368AP/AF/AFN Package Dimensions Weight: 1.00 g (typ.) 6 2007-10-01 TC74HC367,368AP/AF/AFN Package Dimensions Weight: 0.18 g (typ.) 7 2007-10-01 TC74HC367,368AP/AF/AFN Package Dimensions (Note) Note: This package is not available in Japan. Weight: 0.13 g (typ.) 8 2007-10-01 TC74HC367,368AP/AF/AFN RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. 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Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01