TC74HC4052AFT

TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC4051AP,TC74HC4051AF,TC74HC4051AFT TC74HC4052AP,TC74HC4052AF,TC74HC4052AFT TC74HC4053AP,TC74HC4053AF,TC74HC4053AFN,TC74HC4053AFT TC74HC4051AP/AF/AFT 8-Channel Analog Multiplexer/Demultiplexer TC74HC4052AP/AF/AFT Dual 4-Channel Analog Multiplexer/Demultiplexer TC74HC4053AP/AF/AFN/AFT Triple 2-Channel Analog Multiplexer/Demultiplexer The TC74HC4051A/4052A/4053A are high speed CMOS ANALOG MULTIPLEXER/DEMULTIPLEXER fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The TC74HC4051A has an 8 channel configuration, the TC74HC4052A has a 4 channel × 2 configuration and the TC74HC4053A has a 2 channel × 3 configuration. The digital signal to the control terminal turns “ON” the corresponding switch of each channel a large amplitude signal (VCC − VEE) can then be switched by the small logical amplitude (VCC − GND) control signal. For example, in the case of VCC = 5 V, GND = 0 V, VEE = −5 V, signals between −5 V and +5 V can be switched from the logical circuit with a single power supply of 5 V. As the ON-resistance of each switch is low, they can be connected to circuits with low input impedance. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Note: xxxFN (JEDEC SOP) is not available in Japan. TC74HC4051AP, TC74HC4052AP, TC74HC4053AP TC74HC4051AF, TC74HC4052AF, TC74HC4053AF TC74HC4053AFN Features • • • • • • High speed: tpd = 15 ns (typ.) at VCC = 5 V, VEE = 0 V Low power dissipation: ICC = 4 μA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) Low ON resistance: RON = 50 Ω (typ.) at VCC − VEE = 9 V High noise immunity: THD = 0.02% (typ.) at VCC − VEE = 9 V Pin and function compatible with 4051/4052/4053B TC74HC4051AFT, TC74HC4052AFT, TC74HC4053AFT Weight DIP16-P-300-2.54A SOP16-P-300-1.27A SOL16-P-150-1.27 TSSOP16-P-0044-0.65A : 1.00 g (typ.) : 0.18 g (typ.) : 0.13 g (typ.) : 0.06 g (typ.) 1 2007-10-01 TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT Pin Assignment TC74HC4051A 4 6 COM 7 5 INH VEE GND 1 2 3 4 5 6 7 8 (top view) 16 15 14 13 12 11 10 9 VCC 2 1 0 3 A B C 0Y 2Y Y-COM 3Y 1Y INH VEE GND 1 2 3 4 5 6 7 8 (top view) TC74HC4052A 16 15 14 13 12 11 10 9 VCC 2X 1X X-COM 0X 3X A B TC74HC4053A 1Y 0Y 1Z Z-COM 0Z INH VEE GND 1 2 3 4 5 6 7 8 (top view) 16 15 14 13 12 11 10 9 VCC Y-COM X-COM 1X 0X A B C 2 2007-10-01 TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT IEC Logic Symbol TC74HC4051A A B C INH (11) (10) (9) (6) 0 2 G8 0 1 2 COM (3) 3 0... 7 4 5 6 7 (13) (14) (15) (12) (1) (5) (2) (4) 0 0 1 2 3 4 5 6 7 Y-COM (3) X-COM (13) 0 ... 3 1 2 3 MUXDMUX 0 8× 7 A B INH (10) (9) (6) TC74HC4052A 0 MUXDMUX 0 4× 1 3 G4 (12) (14) (15) (11) (1) (5) (2) (4) 0X 1X 2X 3X 0Y 1Y 2Y 3Y TC74HC4053A INH A X-COM B Y-COM C Z-COM (6) (11) (14) (10) (15) (9) (4) MUXDMUX G2 2×0 2×1 0, 1 0 1 (12) (13) (2) (1) (5) (3) 0X 1X 0Y 1Y 0Z 1Z Truth Table Control Inputs Inhibit L L L L L L L L H C* L L L L H H H H X B L L H H L L H H X A L H L H L H L H X HC4051A 0 1 2 3 4 5 6 7 None “ON” Channel HC4052A 0X, 0Y 1X, 1Y 2X, 2Y 3X, 3Y ― ― ― ― None HC4053A 0X, 0Y, 0Z 1X, 0Y, 0Z 0X, 1Y, 0Z 1X, 1Y, 0Z 0X, 0Y, 1Z 1X, 0Y, 1Z 0X, 1Y, 1Z 1X, 1Y, 1Z None X: Don’t care *: Except HC4052A 3 2007-10-01 TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT System Diagram TC74HC4051A COM OUT c IN A Logic Level Converter 0 1 2 3 4 5 6 B C INH OUT c IN 7 TC74HC4052A X-COM OUT A Logic Level Converter c IN 0X 1X 2X 3X 0Y 1Y 2Y B INH OUT c IN 3Y Y-COM TC74HC4053A Y-COM X-COM A Logic Level Converter OUT c IN 0X 1X 0Y 1Y 0Z B C OUT c IN INH 1Z Z-COM 4 2007-10-01 TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT Absolute Maximum Ratings (Note 1) Characteristics Supply voltage range Supply voltage range Control input voltage Switch I/O voltage Control input diode current I/O diode current Switch through current DC VCC or ground current Power dissipation Storage temperature Symbol VCC VCC-VEE VIN VI/O IICK IOK IT ICC PD Tstg Rating −0.5 to 7 −0.5 to 13 −0.5 to VCC + 0.5 Unit V V V V mA mA mA mA mW °C VEE − 0.5 to VCC + 0.5 ±20 ±20 ±25 ±50 500 (DIP) (Note 2)/180 (SOP, TSSOP) −65 to 150 Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be applied up to 300 mW. Operating Ranges (Note) Characteristics Supply voltage range Supply voltage range Supply voltage range Control input voltage Switch I/O voltage Operating temperature Symbol VCC VEE VCC-VEE VIN VI/O Topr Rating 2 to 6 −6 to 0 Unit V V V V V °C 2 to 12 0 to VCC VEE to VCC −40 to 85 0 to 1000 (VCC = 2.0 V) Control input rise and fall time tr, tf 0 to 500 (VCC = 4.5 V) 0 to 400 (VCC = 6.0 V) ns Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused control inputs must be tied to either VCC or GND. 5 2007-10-01 TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT Electrical Characteristics DC Characteristics Characteristics Symbol Test Condition VEE (V) VCC (V) 2.0 High-level control input voltage VIHC ⎯ Ta = 25°C Min 1.50 3.15 4.20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Ta = −40 to 85°C Max ⎯ ⎯ ⎯ Unit Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Min 1.50 3.15 4.20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ 4.5 6.0 2.0 V 0.50 1.35 1.80 180 120 100 ⎯ 0.50 1.35 1.80 225 150 125 ⎯ Ω Low-level control input voltage VILC ⎯ 4.5 6.0 V VIN = VILC or VIHC VI/O = VCC to VEE II/O ≤ 2 mA ON resistance RON VIN = VILC or VIHC VI/O = VCC or VEE II/O ≤ 2 mA Difference of ON resistance between switches Input/output leakage current (switch off) Switch input leakage current (switch on) Control input current Quiescent supply current IIN ICC VIN = VILC or VIHC ΔRON VI/O = VCC to VEE II/O ≤ 2 mA VOS = VCC or GND IOFF VIS = GND or VCC VIN = VILC or VIHC IIZ VOS = VCC or GND VIN = VILC or VIHC VIN = VCC or GND VIN = VCC or GND GND −4.5 −6.0 4.5 4.5 6.0 2.0 4.5 4.5 6.0 4.5 4.5 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 85 55 50 150 70 50 45 10 5 5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ GND GND −4.5 −6.0 150 100 80 30 12 10 ±60 ±100 ±60 ±100 ±0.1 190 125 100 35 15 12 ±600 ±1000 ±600 ±1000 ±1.0 Ω GND −4.5 −6.0 GND −6.0 nA GND −6.0 nA μA μA GND GND −6.0 4.0 8.0 40.0 80.0 6 2007-10-01 TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT AC Characteristics (CL = 50 pF, input: tr = tf = 6 ns, GND = 0 V) Characteristics Symbol Test Condition VEE (V) VCC (V) GND Phase difference between input and output φI/O All types GND GND −4.5 Ta = 25°C Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Ta = −40 to 85°C Max 60 12 10 ⎯ Unit Typ. 25 6 5 4 64 18 15 18 64 18 15 18 50 14 12 14 100 33 28 29 100 33 28 29 95 30 26 26 Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max 75 15 13 ⎯ 2.0 4.5 6.0 4.5 2.0 4.5 6.0 4.5 2.0 4.5 6.0 4.5 2.0 4.5 6.0 4.5 2.0 4.5 6.0 4.5 2.0 4.5 6.0 4.5 2.0 4.5 6.0 4.5 ⎯ ns GND 4051 (Note 1) GND GND −4.5 225 45 38 ⎯ 280 56 48 ⎯ GND Output enable time tpZL tpZH 4052 (Note 1) GND GND −4.5 225 45 38 ⎯ 280 56 48 ― 280 56 48 ⎯ ns GND 4053 (Note 1) GND GND −4.5 225 45 38 ⎯ GND 4051 (Note 1) GND GND −4.5 250 50 43 ⎯ 315 63 54 ⎯ GND Output disable time tpLZ tpHZ 4052 (Note 1) GND GND −4.5 250 50 43 ⎯ 315 63 54 ⎯ ns GND 4053 (Note 1) GND GND −4.5 225 45 38 ⎯ 280 56 48 ⎯ Control input capacitance COMMON terminal capacitance CIN All types 4051 ⎯ ⎯ ⎯ 5 36 19 11 7 7 7 0.95 0.85 0.75 70 71 67 10 70 40 20 15 15 15 2 2 2 ⎯ ⎯ ⎯ 10 70 40 20 15 15 15 2 2 2 ⎯ ⎯ ⎯ pF CIS 4052 4053 4051 −5.0 5.0 ⎯ ⎯ ⎯ pF SWITCH terminal capacitance COS 4052 4053 4051 −5.0 5.0 ⎯ ⎯ ⎯ pF Feedthrough capacitance CIOS 4052 4053 4051 −5.0 5.0 ⎯ ⎯ ⎯ pF Power dissipation capacitance CPD 4052 4053 (Note 2) GND 5.0 ⎯ ⎯ pF Note 1: RL = 1 kΩ Note 2: CPD is defined as the value of the internal equivalent capacitance of IC which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD·VCC·fIN + ICC 7 2007-10-01 TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT Analog Switch Characteristics (GND = 0 V, Ta = 25°C) (Note 1) Test Condition Characteristics Symbol RL = 10 kΩ, CL = 50 pF fIN = 1 kHz VIN = 4.0 Vp-p VIN = 8.0 Vp-p VIN = 11.0 Vp-p All 4051 4052 Adjust fIN voltage to obtain 0dBm at VOS Frequency response (switch on) fmax Increase fIN frequency until dB meter reads −3dB RL = 50 Ω, CL = 10 pF fIN = 1 MHz, sine wave 4053 All 4051 4052 4053 All 4051 4052 4053 VIN is centered at (VCC − VEE)/2 Feed through attenuation (switch off) Adjust input for 0dBm RL = 600 Ω, CL = 50 pF fIN = 1 MHz, sine wave Crosstalk (control input to signal output) RL = 600 Ω, CL = 50 pF fIN = 1 MHz, square wave (tr = tf = 6 ns) Adjust VIN to obtain 0dBm at input RL = 600 Ω, CL = 50 pF fIN = 1 MHz, sine wave −2.25 2.25 −4.5 −6.0 VEE (V) −4.5 −6.0 VCC (V) 4.5 6.0 Typ. 0.025 0.020 0.018 120 Unit Sine wave distortion (T.H.D) −2.25 2.25 % (Note 2) (Note 3) −2.25 2.25 45 70 95 (Note 2) (Note 3) −4.5 190 4.5 70 110 150 MHz (Note 2) (Note 3) −6.0 200 6.0 85 140 190 −50 −50 −50 4.5 6.0 dB −2.25 2.25 −4.5 −6.0 60 140 200 −50 −50 −50 4.5 6.0 mV Crosstalk (between any switches) −2.25 2.25 −4.5 −6.0 4.5 6.0 dB Note 1: These characteristics are determined by design of devices. Note 2: Input COMMON terminal, and measured at SWITCH terminal. Note 3: Input SWITCH terminal, and measured at COMMON terminal. 8 2007-10-01 TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT Switching Characteristics Test Circuits 1. tpLZ, tpHZ, tpZL, tpZH VCC VC from P.G S1 C I/O VEE VCC O/I GND 1 kΩ 50 pF 6 ns 90% 10% 6 ns VCC 50% GND 50% 90% tpHZ 50% VOH VOL VOH S2 VO/I (S1 = VCC, S2 = GND) tpZH VO/I (S1 = GND, S2 = VCC) tpZL 10% tpLZ VOL 2. Cross Talk (control input-switch output) fIN = 1 MHz duty = 50% tr = tf = 6 ns VCC −VCC GND from P.G C I/O VCC O/I 600 Ω 600 Ω VEE GND 3. Feedthrough Attenuation VCC C 0.1 μF 600 Ω VCC O/I 600 Ω I/O VEE GND 50 pF VIN 50 pF 9 2007-10-01 TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT 4. CIOS, CIS, COS CIOS VCC C SWITCH I/O VEE VCC O/I GND COMMON COS 5. Cross Talk (between any two switches) VCC C VIN 0.1 μF 600 Ω C I/O 600 Ω I/O CIS VCC O/I 600 Ω 50 pF 50 pF O/I 600 Ω 10 pF VEE GND 6. Frequency Response (switch on) VCC C VIN 0.1 μF VEE I/O VCC O/I GND 50 Ω 10 2007-10-01 TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT Package Dimensions Weight: 1.00 g (typ.) 11 2007-10-01 TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT Package Dimensions Weight: 0.18 g (typ.) 12 2007-10-01 TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT Package Dimensions (Note) Note: This package is not available in Japan. Weight: 0.13 g (typ.) 13 2007-10-01 TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT Package Dimensions Weight: 0.06 g (typ.) 14 2007-10-01 TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. 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Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 15 2007-10-01