TC74VHC245FK(EL,K)

TC74VHC245F/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC245F, TC74VHC245FK Octal Bus Transceiver The TC74VHC245 is an advanced high speed CMOS OCTAL BUS TRANSCEIVER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. It is intended for two-way asynchronous communication between data busses. The direction of data transmission is determined by the level of the DIR input. The enable input ( G ) can be used to disable the device so that the busses are effectively isolated. All inputs are equipped with protection circuits against static discharge. TC74VHC245F TC74VHC245FK Features (Note 1) (Note 2) (Note 3)  High speed: tpd = 4.0 ns (typ.) at VCC = 5 V  Low power dissipation: ICC = 4 µA (max) at Ta = 25°C  High noise immunity: VNIH = VNIL = 28% VCC (min)  Balanced propagation delays: tpLH ∼ − tpHL Weight SOP20-P-300-1.27A VSSOP20-P-0030-0.50  Wide operating voltage range: VCC (opr) = 2 V to 5.5 V  Low noise: VOLP = 1.0 V (max) : 0.22 g (typ.) : 0.03 g (typ.)  Pin and function compatible with 74ALS245 Note 1: Do not apply a signal to any bus terminal when it is in the output mode. Damage may result. Note 2: All floating (high impedance) bus terminals must have their input levels fixed by means of pull up or pull down resistors. Note 3: A parasitic diode is formed between the bus and VCC terminals. Therefore bus terminal can not be used to interface 5 V to 3 V systems directly. Start of commercial production 1991-05 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-01-31 TC74VHC245F/FK Pin Assignment IEC Logic Symbol DIR 1 20 A1 2 19 A2 3 18 VCC DIR B1 A1 (19) (1) (2) G3 3 EN 1 [BA] 3 EN 2 [AB] (18) 1 B1 2 A3 4 17 B2 A4 5 16 B3 A5 6 15 B4 A3 A6 7 14 B5 A4 A7 8 13 B6 A8 9 12 B7 GND 10 11 B8 A2 A5 A6 A7 (top view) A8 (3) (17) (4) (16) (5) (15) (6) (14) (7) (13) (8) (12) (9) (11) B2 B3 B4 B5 B6 B7 B8 Truth Table Inputs Function Output DIR A Bus L L Output Input A=B L H Input Output B=A H X G B Bus Z Z X: Don’t care Z: High impedance Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5 to 7.0 V DC input voltage (DIR, G ) VIN −0.5 to 7.0 V DC bus I/O voltage VI/O −0.5 to VCC + 0.5 V Input diode current IIK −20 mA Output diode current IOK ±20 mA DC output current IOUT ±25 mA DC VCC/ground current ICC ±75 mA Power dissipation PD 180 mW Storage temperature Tstg −65 to 150 °C Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-01-31 TC74VHC245F/FK Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage VCC 2.0 to 5.5 V Input voltage (DIR, G ) VIN 0 to 5.5 V Bus I/O voltage VI/O 0 to VCC V Operating temperature Topr −40 to 85 °C Input rise and fall time dt/dv 0 to 100 (VCC = 3.3 ± 0.3 V) 0 to 20 (VCC = 5 ± 0.5 V) ns/V Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs and bus inputs must be tied to either VCC or GND. Please connect both bus inputs and the bus outputs with VCC or GND when the I/O of the bus terminal changes by the function. In this case, please note that the output is not shortcircuited. Electrical Characteristics DC Characteristics Characteristics Test Condition Symbol VCC (V) Min Typ. Max Min Max 2.0 1.50 VCC × 0.7 ― ― ― ― ― 1.50 VCC × 0.7 2.0 3.0 to 5.5 ― ― ― ― ― 0.50 VCC × 0.3 0.50 VCC × 0.3 IOH = −50 μA 2.0 3.0 4.5 1.9 2.9 4.4 2.0 3.0 4.5 ― ― ― 1.9 2.9 4.4 ― ― ― IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 ― ― ― ― 2.48 3.80 ― ― IOL = 50 μA 2.0 3.0 4.5 ― ― ― 0.0 0.0 0.0 0.1 0.1 0.1 ― ― ― 0.1 0.1 0.1 IOL = 4 mA IOL = 8 mA 3.0 4.5 ― ― ― ― 0.36 0.36 ― ― 0.44 0.44 High-level input voltage VIH ― Low-level input voltage VIL ― High-level output voltage VOH VIN = VIH or VIL Ta = −40 to 85°C Ta = 25°C 3.0 to 5.5 ― ― Unit V V V Low-level output voltage VOL 3-state output offstate current IOZ VIN = VIH or VIL VOUT = VCC or GND 5.5 ― ― ±0.25 ― ±2.50 μA Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5 ― ― ±0.1 ― ±1.0 μA Quiescent supply current ICC VIN = VCC or GND 5.5 ― ― 4.0 ― 40.0 μA VIN = VIH or VIL © 2019 Toshiba Electronic Devices & Storage Corporation 3 V 2019-01-31 TC74VHC245F/FK AC Characteristics (input: tr = tf = 3 ns) Characteristics Propagation delay time 3-state output enable time Test Condition Symbol VCC (V) tpZL tpZH 3-state output disable time tpLZ tpHZ Output to output skew tosLH tosHL CL (pF) Min Typ. Max Min Max 15 ― 5.8 8.4 1.0 10.0 50 ― 8.3 11.9 1.0 13.5 15 ― 4.0 5.5 1.0 6.5 50 ― 5.5 7.5 1.0 8.5 15 ― 8.5 13.2 1.0 15.5 50 ― 11.0 16.7 1.0 19.0 15 ― 5.8 8.5 1.0 10.0 50 ― 7.3 10.6 1.0 12.0 3.3 ± 0.3 50 ― 11.5 15.8 1.0 18.0 5.0 ± 0.5 50 ― 7.0 9.7 1.0 11.0 3.3 ± 0.3 50 ― ― 1.5 ― 1.5 5.0 ± 0.5 50 ― ― 1.0 ― 1.0 3.3 ± 0.3 tpLH tpHL ― 5.0 ± 0.5 3.3 ± 0.3 RL = 1 kΩ 5.0 ± 0.5 RL = 1 kΩ (Note 1) Ta = −40 to 85°C Ta = 25°C Unit ns ns ns ns Input capacitance CIN DIR, G ― 4 10 ― 10 pF Bus input capacitance CI/O An, Bn ― 8 ― ― ― pF Power dissipation capacitance CPD ― 21 ― ― ― pF (Note 2) Note 1: Parameter guaranteed by design. tosLH = |tpLHm − tpLHn|, tosHL = |tpHLm − tpHLn| Note 2: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD·VCC·fIN + ICC / 8 (per bit) Noise Characteristics (input: tr = tf = 3 ns) (Note) Characteristics Test Condition Symbol Ta = 25°C VCC (V) Typ. Max Unit Quiet output maximum dynamic VOL VOLP CL = 50 pF 5.0 0.7 1.0 V Quiet output minimum dynamic VOL VOLV CL = 50 pF 5.0 −0.7 −1.0 V Minimum high level dynamic input voltage VIHD CL = 50 pF 5.0 ― 3.5 V Maximum low level dynamic input voltage VILD CL = 50 pF 5.0 ― 1.5 V © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-01-31 TC74VHC245F/FK Input Equivalent Circuit Bus Terminal Equivalent Circuit DIR, An, Bn INPUT I/O © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-01-31 TC74VHC245F/FK Package Dimensions Weight: 0.22 g (typ.) © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-01-31 TC74VHC245F/FK Package Dimensions Weight: 0.03 g (typ.) © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-01-31 TC74VHC245F/FK RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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