TC75S102F,LF(CT

TC75S102F TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic Single Operational Amplifier Ultra-Low supply current TC75S102F Features • • • • Input and Output Full Range Ultra-Low supply current 0.27µA (Typ.) @VDD=1.5V Low Input offset voltage 1.3mV (Max) @VDD=1.5V Wide Operating Voltage Range 1.5V to 5.5V Absolute Maximum Ratings (Ta = 25°C) Characteristics SMV Symbol Rating Unit VDD - VSS 6 V DVIN ±6 V VIN VDD to VSS V Output voltage VOUT VSS -0.3V to VDD +0.3V ≤ VSS + 6V V Output current IOUT ±25 mA Power dissipation PD 200 mW Operating temperature Topr -40 to 105 °C Storage temperature Tstg -55 to 150 °C Supply voltage Differential input voltage Input voltage Weight: SMV (SOT-25)(SC-74A) :14 mg (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Operating Ratings (Ta = -40 to 105°C) Characteristics Supply voltage Symbol Rating Unit VDD - VSS 1.5 to 5.5 V Note2: A higher load capacitance will increase the risk of voltage oscillation. Allow sufficient capacitance value when designing your circuit and using this product to prevent voltage oscillation. Note3: This device is sensitive to electrostatic discharge. Please ensure equipment, operator and tools are adequately earthed when handling. Start of commercial production 2020-06 © 2020 Toshiba Electronic Devices & Storage Corporation 1 2020-06-05 TC75S102F Marking (top view) 5 Pin Assignment (top view) IN (-) 4 VDD 5 4 - SA2 1 2 + 1 OUT 3 2 VSS 3 IN (+) Electrical Characteristics DC Characteristics (VDD = 1.5V, VSS = GND, Ta = 25°C, VIN = VDD/2, unless otherwise noted.) Characteristics Input offset voltage Input offset voltage drift Input offset current Input bias current Symbol Test Circuit VIO Test Condition Min Typ. Max Unit 1 RS = 1 kΩ, RF = 100kΩ -1.3 -0.1 1.3 mV VIOdrift 1 RS = 1 kΩ, RF = 100kΩ - 2.8 - µV/°C IIO - - 1 - pA II - - - 1 - pA 0 - VDD V 64 139 - dB RL ≥ 100 kΩ 1.4 - - 4 RL ≥ 100 kΩ - - 0.1 CMRR 2 VIN = 0 to 1.5V 53 80 SVRR 1 VDD = 1.5 to 5.0V 61 80 - dB Supply current IDD 5 Ta = -40 to 105°C - 0.27 0.60 µA Ta = 25°C - 0.27 0.46 µA Source current Isource 6 - 0.34 0.6 - mA Isink 7 - 0.28 0.4 - mA Common mode input voltage CMVIN 2 GV - VOH 3 VOL Common mode input signal rejection ratio Supply voltage rejection ratio Voltage gain (open loop) Maximum output voltage Sink current RS = 1 kΩ, RF = 100kΩ - - V dB AC Characteristics (VDD = 0.75 V, VSS = -0.75 V, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit fT - - - 0.5 - kHz Phase margin Φm - - - 53 - degrees Slew Rate SR - - - 0.37 - V/ms Characteristics Unity Gain Cross Frequency © 2020 Toshiba Electronic Devices & Storage Corporation 2 2020-06-05 TC75S102F DC Characteristics (VDD = 5.0V, VSS = GND, Ta = 25°C, VIN=VDD/2, unless otherwise noted.) Characteristics Symbol Test Circuit VIO 1 VIOdrift 1 IIO - II - CMVIN 2 GV - VOH 3 VOL Min Typ. Max Unit RS = 1 kΩ, RF = 100 kΩ -1.7 -0.1 1.7 mV RS = 1 kΩ, RF = 100 kΩ - 2.4 - µV/°C - - 1 - pA - - 1 - pA 0 - VDD V 80 100 - dB RL ≥ 100 kΩ 4.9 - - 4 RL ≥ 100 kΩ - - 0.1 CMRR 2 VIN = 0 to 5.0V 59 80 - dB Supply current IDD 5 Ta = -40 to 105°C - 0.35 0.7 µA Ta = 25°C - 0.35 0.54 µA Source current Isource 6 - 7.8 11 - mA Isink 7 - 8.2 10 - mA Input offset voltage Input offset voltage drift Input offset current Input bias current Common mode input voltage Voltage gain (open loop) Maximum output voltage Common mode input signal rejection ratio Sink current Test Condition RS = 1 kΩ, RF = 100 kΩ - V AC Characteristics (VDD = 2.5 V, VSS = -2.5 V, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit fT - - - 0.63 - kHz Phase margin Φm - - - 63 - degrees Slew Rate SR - - - 0.45 - V/ms Characteristics Unity Gain Cross Frequency © 2020 Toshiba Electronic Devices & Storage Corporation 3 2020-06-05 TC75S102F Test Circuit 1. SVRR, VIO SVRR For each of the two VDD values, measure the VOUT value, as indicated below, and calculate the value of SVRR using the equation shown. When VDD = 1.5 V, VDD = VDD1 and VOUT = VOUT1 When VDD = 5.0 V, VDD = VDD2 and VOUT = VOUT2 • • VDD RF RS SVRR=20log �� RF RS VOUT 5 VIO Measure the value of VOUT and calculate the value of VIO using the following equation. • VDD/2 VIO = �VOUT - 2. CMRR, CMVIN VDD • RF RS CMRR=20log �� RF RS VDD/2 VDD RS �× 2 RF +RS CMRR Measure the VOUT value, as indicated below, and calculate the value of the CMRR using the equation shown. When VIN = 0 V, VIN = VIN1 and VOUT = VOUT1 When VIN = 5.0 V, VIN = VIN2 and VOUT = VOUT2 VOUT VIN RF +RS VDD1 -VDD2 �× � VDD1 VDD2 RS �VOUT1 - � �� - �VOUT2 - � �� 2 2 VIN1 - VIN2 RF +RS � × � VOUT1 - VOUT2 RS • CMVIN Input range within which the CMRR specification guarantees VOUT value (as varied by the VIN value). • VOH 3. VOH VDD VDD -0.05V 2 VIN2 = VDD +0.05V 2 RL VOH VIN1 = VIN1 VIN2 4. VOL VDD • VOL RL VIN1 = VOL VIN1 VIN2 = VDD +0.05V 2 VDD -0.05V 2 VIN2 © 2020 Toshiba Electronic Devices & Storage Corporation 4 2020-06-05 TC75S102F 5. IDD VDD M IDD VDD/2 6. Isource VDD VDD -0.05 2 M VDD +0.05 2 7. Isink VDD M VDD +0.05 2 VDD -0.05 2 © 2020 Toshiba Electronic Devices & Storage Corporation 5 2020-06-05 TC75S102F Package Dimensions SMV (SOT-25)(SC-74A) Unit: mm Weight : 14 mg ( typ.) © 2020 Toshiba Electronic Devices & Storage Corporation 6 2020-06-05 TC75S102F RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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