TC75S51FUTE85LF

TC75S51F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S51F, TC75S51FU Single Operational Amplifier TC75S51F The TC75S51F/TC75S51FU is a CMOS single-operation amplifier which incorporates a phase compensation circuit. It is designed with a low-voltage and low-current power supply; this differentiates this device from generalpurpose bipolar op-amps. Features • Low-voltage operation : VDD = ±0.75 to ±3.5 V or 1.5 to 7 V • Low-current power supply : IDD (VDD = 3 V) = 60 µA (typ.) • Built-in phase-compensated op-amp, obviating the need for any external device • Ultra-compact package (SMV) TC75S51FU Absolute Maximum Ratings (Ta = 25°C) (USV) Characteristics Symbol Rating Unit VDD, VSS 7 V DVIN ±7 V Input voltage VIN VDD to VSS V Power dissipation PD 200 mW Operating temperature Topr −40 to 85 °C Storage temperature Tstg −55 to 125 °C Supply voltage Differential input voltage Weight SSOP5-P-0.95 : 0.014 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1993-07 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-09-11 TC75S51F/FU Marking (top view) 5 Pin Connection (top view) 4 VDD OUT 5 4 SC 1 2 1 IN (+) 3 2 VSS 3 IN (−) Electrical Characteristics DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Characteristics Symbol Test Circuit Test Condition Typ. Max Unit Input offset voltage VIO 1  2 10 mV Input offset current IIO    1  pA II    1  pA CMVIN 2 0  2.5 V GV  60 70  dB VOH 3 RL ≥ 100 kΩ 2.9   VOL 4 RL ≥ 100 kΩ   0.1 Common mode input signal rejection ratio CMRR 2 VIN = 0.0 to 2.5 V 55 65  dB Supply voltage rejection ratio SVRR 1 VDD = 1.5 to 7.0 V 60 70  dB IDD 5   60 200 µA Test Condition Min Typ. Max Unit  2 10 mV Input bias current Common mode input voltage Voltage gain (open loop) Maximum output voltage Supply current RS = 1 kΩ, RF = 100 kΩ Min RS = 1 kΩ, RF = 100 kΩ  V DC Characteristics (VDD = 1.5 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Input offset voltage VIO 1 Input offset current IIO    1  pA II    1  pA CMVIN 2 0  1.0 V GV  60 70  dB VOH 3 RL ≥ 100 kΩ 1.4   VOL 4 RL ≥ 100 kΩ   0.1 IDD 5  50 150 Characteristics Input bias current Common mode input voltage Voltage gain (open loop) Maximum output voltage Supply current Note: RS = 10 kΩ, RF = 100 kΩ RS = 10 kΩ, RF = 100 kΩ   V µA For this device, please use a source current of no more than 70 µA. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-09-11 TC75S51F/FU AC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Slew rate SR  Unity gain cross frequency fT  Characteristics Test Condition Min Typ. Max Unit AV = 0 dB  0.5  V/µs AV = 40 dB  0.6  MHz Min Typ. Max Unit AC Characteristics (VDD = 1.5 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Slew rate SR  AV = 0 dB  0.3  V/µs Unity gain cross frequency fT  AV = 40 dB  0.5  MHz • SVRR For each of the two VDD values, measure the VOUT value, as indicated below, and calculate the value of SVRR using the equation shown. When VDD = 1.5 V, VDD = VDD1 and VOUT = VOUT1 When VDD = 7.0 V, VDD = VDD2 and VOUT = VOUT2  V  1 − V OUT 2 RS  × SVRR = 20 l og  OUT  V 1− V RF + RS  DD DD 2   • VIO Measure the value of VOUT and calculate the value of VIO using the following equation.  RS VDD   × VIO =  V OUT − 2 R   F + RS • CMRR Measure the VOUT value, as indicated below, and calculate the value of the CMRR using the equation shown. When VIN = 0.0 V, VIN = VIN1 and VOUT = VOUT1 When VIN = 2.5 V, VIN = VIN2 and VOUT = VOUT2  V  1 − V OUT 2 RS  CMRR = 20 l og  OUT ×  RF + RS  VIN1 − VIN 2   • CMVIN Input range within which the CMRR specification guarantees VOUT value (as varied by the VIN value). Characteristics Test Condition Test Circuit 1. SVRR, VIO VDD RF RS VOUT 5 RF RS VDD/2 2. CMRR, CMVIN VDD RF RS VOUT RS RF VIN VDD/2 © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-09-11 TC75S51F/FU 3. VOH VDD • VOH VIN1 = VDD − 0.05 V 2 VIN2 = VDD + 0.05 V 2 RL VOH VIN1 VIN2 4. VOL VDD RL • VOL VIN1 = VDD + 0.05 V 2 VIN2 = VDD − 0.05 V 2 VOL VIN1 VIN2 5. IDD VDD M IDD VDD/2 © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-09-11 TC75S51F/FU IDD – VDD GV VSS = GND Ta = 25°C Ta = 25°C (dB) VDD = 3 V VIN = VDD/2 80 GV 80 120 VSS = GND 60 Voltage gain Supply current IDD (µA) 100 –f VDD 40 IDD M 40 20 VDD/2 0 0 1 2 3 4 Supply voltage VDD RL 6 5 0 10 7 10 k 100 k Frequency f – VDD VOH 1M 10 M (Hz) – VDD 7 VSS = GND RL High-level output voltage VOH (Ω) (V) VDD Load resistance RL 1k (V) 1M VOH Isource = 70 µA 100 k VSS = GND Isource = 70 µA Ta = 25°C 10 k 0 100 1 2 3 4 Supply voltage VDD 5 6 6 5 4 3 (V) VDD 2 RL 1 0 0 7 Isource = 70 µA Ta = 25°C 1 2 3 4 Supply voltage VDD 5 VOH Isource = 70 µA 6 7 (V) The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-09-11 TC75S51F/FU VOL – Isink VOL – Isink 10 VDD = 3.0 V VSS = GND VSS = GND Ta = 25°C Ta = 25°C (V) VDD = 1.5 V 1 1 Low-level output voltage VOL Low-level output voltage VOL (V) 10 0.1 0.01 0.001 10 µ 100 µ 1m Sink current Isink 0.1 0.01 0.001 10 µ 10 m (A) 100 µ Sink current 1m Isink 10 m (A) PD – Ta The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-09-11 TC75S51F/FU Package Dimensions Weight: 0.014 g (typ.) © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-09-11 TC75S51F/FU Package Dimensions Weight: 0.006 g (typ.) © 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-09-11 TC75S51F/FU RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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