TC75S54FU(TE85L,F)

TC75S54F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S54F, TC75S54FU, TC75S54FE Single Operational Amplifier The TC75S54F/TC75S54FU/TC75S54FE is a CMOS singleoperation amplifier which incorporates a phase compensation circuit. It is designed for use with a low-voltage, low-current power supply; this differentiates this device from conventional general-purpose bipolar op-amps. TC75S54F Features • Low-voltage operation : VDD = ±0.9 to ±3.5 V or 1.8 to 7 V • Low-current power supply : IDD (VDD = 3 V) = 100 μA (typ.) • Built-in phase-compensated op-amp, obviating the need for any external device • Ultra-compact package TC75S54FU TC75S54FE Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Differential input voltage Input voltage Power dissipation TC75S54F/FU TC75S54FE Symbol Rating Unit VDD, VSS 7 V DVIN ±7 V VIN VDD to VSS V PD 200 Weight SSOP5-P-0.95 : 0.014 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) SON5-P-0.50 : 0.003 g (typ.) mW 100 Operating temperature Topr −40 to 85 °C Storage temperature Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1995-01 1 2014-03-01 TC75S54F/FU/FE Marking (top view) 5 Pin Connection (top view) 4 VDD OUT 5 4 SE 1 2 1 IN (+) 3 2 VSS 3 IN (−) Electrical Characteristics DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Input offset voltage VIO 1 Input offset current IIO ⎯ II Characteristics Input bias current Common mode input voltage Test Condition Min Typ. Max Unit ⎯ 2 10 mV ⎯ ⎯ 1 ⎯ pA ⎯ ⎯ ⎯ 1 ⎯ pA CMVIN 2 ⎯ 0.0 ⎯ 2.1 V dB RS = 1 kΩ GV ⎯ 60 70 ⎯ VOH 3 RL ≥ 100 kΩ 2.9 ⎯ ⎯ VOL 4 RL ≥ 100 kΩ ⎯ ⎯ 0.1 Common mode input signal rejection ratio CMRR 2 VIN = 0.0 to 2.1 V 60 70 ⎯ Supply voltage rejection ratio VDD = 1.8 to 7.0 V Voltage gain (open loop) Maximum output voltage ⎯ V dB SVRR 1 60 70 ⎯ dB Supply current IDD 5 ⎯ ⎯ 100 200 μA Source current Isource 6 ⎯ 100 200 ⎯ μA Isink 7 ⎯ 200 700 ⎯ μA Min Typ. Max Unit ⎯ 2 10 mV Sink current DC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Input offset voltage VIO 1 Input offset current IIO ⎯ ⎯ ⎯ 1 ⎯ pA II ⎯ ⎯ ⎯ 1 ⎯ pA CMVIN 2 ⎯ 0.2 ⎯ 0.9 V GV ⎯ ⎯ 60 70 ⎯ dB VOH 3 RL ≥ 100 kΩ 1.7 ⎯ ⎯ VOL 4 RL ≥ 100 kΩ ⎯ ⎯ 0.1 Characteristics Input bias current Common mode input voltage Voltage gain (open loop) Maximum output voltage Test Condition RS = 10 kΩ V Supply current IDD 5 ⎯ ⎯ 80 160 μA Source current Isource 6 ⎯ 80 160 ⎯ μA Isink 7 ⎯ 200 600 ⎯ μA Sink current 2 2014-03-01 TC75S54F/FU/FE AC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Slew rate SR ⎯ ⎯ ⎯ 0.7 ⎯ V/μs Unity gain cross frequency fT ⎯ ⎯ ⎯ 0.9 ⎯ MHz Characteristics AC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Slew rate SR ⎯ ⎯ ⎯ 0.6 ⎯ V/μs Unity gain cross frequency fT ⎯ ⎯ ⎯ 0.8 ⎯ MHz Characteristics Test Circuit 1. SVRR, VIO • VDD RF RS SVRR For each of the two VDD values, measure the VOUT value, as indicated below, and calculate the value of SVRR using the equation shown. When VDD = 1.8 V, VDD = VDD1 and VOUT = VOUT1 When VDD = 7.0 V, VDD = VDD2 and VOUT = VOUT2 VOUT ⎛ V 1 − V OUT 2 RS SVRR = 20 λog ⎜ OUT × ⎜ V 1− V 2 RF + RS DD DD ⎝ RF RS • VDD/2 ⎞ ⎟ ⎟ ⎠ VIO Measure the value of VOUT and calculate the value of VIO using the following equation. ⎛ RS VDD ⎞ ⎟× VIO = ⎜⎜ V OUT − 2 ⎟⎠ RF + RS ⎝ 2. CMRR, CMVIN • VDD RF RS CMRR Measure the VOUT value, as indicated below, and calculate the value of the CMRR using the equation shown. When VIN = 0.0 V, VIN = VIN1 and VOUT = VOUT1 When VIN = 2.1 V, VIN = VIN2 and VOUT = VOUT2 ⎛ V 1 − V OUT 2 RS CMRR = 20 λog ⎜ OUT × ⎜ RF + RS 1 − VIN 2 V IN ⎝ VOUT RS RF VIN ⎞ ⎟ ⎟ ⎠ VDD/2 • CMVIN Input range within which the CMRR specification guarantees VOUT value (as varied by the VIN value). 3 2014-03-01 TC75S54F/FU/FE 3. VOH VDD • VOH VDD − 0.05 V 2 VIN2 = VDD + 0.05 V 2 RL VOH VIN1 = VIN1 VIN2 4. VOL VDD VOL VIN1 = VDD + 0.05 V 2 VIN2 = VDD − 0.05 V 2 RL • VOL VIN1 VIN2 5. IDD VDD M IDD VDD/2 6. Isource 7. Isink VDD VDD M M 4 2014-03-01 TC75S54F/FU/FE IDD – VDD GV – f 120 VSS = GND VIN = VDD/2 Ta = 25°C VDD = 3 V VSS = GND Ta = 25°C GV (dB) 160 120 Voltage gain Supply current IDD (μA) 200 80 80 40 40 0 0 1 2 3 Supply voltage 4 5 6 VDD (V) 0 10 7 100 1k 2.0 VSS = GND VOL (V) Ta = 25°C Low-level output voltage Sink current Isink (μA) 800 600 400 200 2 3 Supply voltage 4 5 VDD (V) 6 1.6 0.8 0.4 200 400 VOL (V) VSS = GND Ta = 25°C 2 Low-level output voltage VOL (V) Low-level output voltage 800 1000 (μA) VOL – Isink VDD = 3.0 V 1 600 Sink current Isink 600 Sink current Isink 5 400 (Hz) VDD = 1.8 V VSS = GND Ta = 25°C VOL – Isink 200 10 M 1.2 0 0 7 3 0 0 1M VOL – Isink Isink – VDD 1 100 k Frequency f 1000 0 0 10 k 800 4 3 2 1 0 0 1000 (μA) VDD = 5.0 V VSS = GND Ta = 25°C 200 400 600 Sink current Isink 5 800 1000 (μA) 2014-03-01 TC75S54F/FU/FE Isource – VDD VOH – Isource 500 2.0 VDD = 1.8 V VSS = GND Ta = 25°C (V) VSS = GND 400 High-level output voltage VOH Source current Isource (μA) Ta = 25°C 300 200 100 0 0 1 3 2 Supply voltage 6 4 5 VDD (V) 1.6 1.2 0.8 0.4 0 0 7 40 80 200 160 240 Source current Isource VDD = 5.0 V VSS = GND Ta = 25°C 4 3 2 1 0 0 280 (μA) 40 80 120 240 280 (μA) VOH – RL VDD = 3.0 V (V) VDD = 1.8 V VSS = GND Ta = 25°C 1.2 0.8 0.4 0 1k 200 3 High-level output voltage VOH (V) High-level output voltage VOH 1.6 160 Source current Isource VOH – RL 2.0 280 (μA) (V) High-level output voltage VOH (V) High-level output voltage VOH 1 120 240 VOH – Isource 2 80 200 5 VDD = 3.0 V VSS = GND Ta = 25°C 40 160 Source current Isource VOH – Isource 3 0 0 120 10 k 100 k Load resistance RL VSS = GND Ta = 25°C 2 1 0 1k 1M (Ω) 10 k 100 k Load resistance RL 6 1M (Ω) 2014-03-01 TC75S54F/FU/FE VOH – RL VDD = 5.0 V VSS = GND Ta = 25°C 3 2 1 0 1k This data was obtained from an unmounted standalone IC. If the IC is mounted on a PCB, its power dissipation will be greater. Note that, depending on the PCB’s thermal characteristics, the curves may differ substantially from those shown. (mW) 4 PD – Ta 300 Power dissipation PD High-level output voltage VOH (V) 5 10 k 100 k Load resistance RL 200 100 0 −40 1M (Ω) 0 40 80 120 Ambient temperature Ta (°C) 7 2014-03-01 TC75S54F/FU/FE Package Dimensions Weight: 0.014 g (typ.) 8 2014-03-01 TC75S54F/FU/FE Package Dimensions Weight: 0.006 g (typ.) 9 2014-03-01 TC75S54F/FU/FE Package Dimensions Weight: 0.003 g (typ.) 10 2014-03-01 TC75S54F/FU/FE RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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