TC75S55FU

TC75S55F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S55F,TC75S55FU,TC75S55FE Single Operational Amplifier The TC75S55F/TC75S55FU/TC75S55FE is a CMOS singleoperation amplifier which incorporates a phase compensation circuit. It is designed for use with a low-voltage, low-current power supply; this differentiates this device from conventional general-purpose bipolar op-amps. TC75S55F Features • • • • Low-voltage operation : VDD = ±0.9~3.5 V or 1.8~7 V Low-current power supply : IDD (VDD = 3 V) = 10 μA (typ.) Built-in phase-compensated op-amp, obviating the need for any external device Ultra-compact package TC75S55FU TC75S55FE Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Differential input voltage Input voltage Power dissipation TC75S55F/FU TC75S55FE Symbol VDD, VSS DVIN VIN PD Topr Tstg Rating 7 ±7 VDD~VSS 200 100 −40~85 −55~125 Unit V V V mW °C °C Weight SSOP5-P-0.95 : 0.014 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) SON5-P-0.50 : 0.003 g (typ.) Operating temperature Storage temperature Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 TC75S55F/FU/FE Marking (top view) 5 4 Pin Connection (top view) VDD 5 OUT 4 SF 1 2 3 1 IN (+) 2 VSS 3 IN (−) Electrical Characteristics DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Characteristics Input offset voltage Input offset current Input bias current Common mode input voltage Voltage gain (open loop) Maximum output voltage Common mode input signal Rejection Ratio Supply voltage rejection ratio Supply current Source current Sink current Symbol VIO IIO II CMVIN GV VOH VOL CMRR SVRR IDD Isource Isink Test Circuit 1 ⎯ ⎯ 2 ⎯ 3 4 2 1 5 6 7 RL > 1 MΩ = RL > 1 M Ω = VIN = 0.0~2.1 V VDD = 1.8~7.0 V ⎯ ⎯ ⎯ Test Condition RS = 10 kΩ ⎯ ⎯ ⎯ ⎯ Min ⎯ ⎯ ⎯ 0.0 60 2.9 ⎯ 60 60 ⎯ 10 100 Typ. 2 1 1 ⎯ 70 ⎯ ⎯ 70 70 10 20 450 Max 10 ⎯ ⎯ 2.1 ⎯ ⎯ 0.1 ⎯ ⎯ 20 ⎯ ⎯ Unit mV pA pA V dB V dB dB μA μA μA DC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C) Characteristics Input offset voltage Input offset current Input bias current Common mode input voltage Voltage gain (open loop) Maximum output voltage Supply current Source current Sink current Symbol VIO IIO II CMVIN GV VOH VOL IDD Isource Isink Test Circuit 1 ⎯ ⎯ 2 ⎯ 3 4 5 6 7 RL > 1 MΩ = RL > 1 M Ω = ⎯ ⎯ ⎯ Test Condition RS = 100 kΩ ⎯ ⎯ ⎯ ⎯ Min ⎯ ⎯ ⎯ 0.0 60 1.7 ⎯ ⎯ 8 100 Typ. 2 1 1 ⎯ 70 ⎯ ⎯ 8 16 400 Max 10 ⎯ ⎯ 0.9 ⎯ ⎯ 0.1 16 ⎯ ⎯ Unit mV pA pA V dB V μA μA μA 2 2007-11-01 TC75S55F/FU/FE AC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Characteristics Slew rate Unity gain cross frequency Symbol SR fT Test Circuit ⎯ ⎯ Test Condition ⎯ ⎯ Min ⎯ ⎯ Typ. 0.08 160 Max ⎯ ⎯ Unit V/μs kHz AC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C) Characteristics Slew rate Unity gain cross frequency Symbol SR fT Test Circuit ⎯ ⎯ Test Condition ⎯ ⎯ Min ⎯ ⎯ Typ. 0.06 140 Max ⎯ ⎯ Unit V/μs kHz Test Circuit 1. SVRR, VIO VDD RF RS VOUT RS RF • • SVRR For each of the two VDD values, measure the VOUT value, as indicated below, and calculate the value of SVRR using the equation shown. When VDD = 1.8 V, VDD = VDD1 and VOUT = VOUT1 When VDD = 7.0 V, VDD = VDD2 and VOUT = VOUT2 ⎛V 1 − V OUT 2 RS SVRR = 20 log ⎜ OUT × ⎜ V 1− V RF + RS DD DD 2 ⎝ ⎞ ⎟ ⎟ ⎠ VDD/2 VIO Measure the value of VOUT and calculate the value of VIO using the following equation. ⎛ RS VDD ⎞ ⎟× VIO = ⎜ V OUT − ⎜ 2 ⎟ RF + RS ⎝ ⎠ 2. CMRR, CMVIN VDD RF RS VOUT RF VIN RS VDD/2 • • CMRR Measure the VOUT value, as indicated below, and calculate the value of the CMRR using the equation shown. When VIN = 0.0 V, VIN = VIN1 and VOUT = VOUT1 When VIN = 2.1 V, VIN = VIN2 and VOUT = VOUT2 ⎛V 1 − V OUT 2 RS CMRR = 20 log ⎜ OUT × ⎜ RF + RS VIN1 − VIN 2 ⎝ ⎞ ⎟ ⎟ ⎠ CMVIN Input range within which the CMRR specification guarantees VOUT value (as varied by the VIN value). 3 2007-11-01 TC75S55F/FU/FE 3. VOH VDD • VOH VIN1 = VDD − 0.05 V 2 VOH RL VIN2 = VDD + 0.05 V 2 VIN1 VIN2 4. VOL VDD • VOL VIN1 = VDD + 0.05 V 2 VDD − 0.05 V 2 RL VOL VIN2 = VIN1 VIN2 5. IDD VDD M IDD VDD/2 6. Isource VDD 7. Isink VDD M M 4 2007-11-01 TC75S55F/FU/FE IDD – VDD 20 VSS = GND VIN = VDD/2 Ta = 25°C 120 GV – f VDD = 3 V VSS = GND Ta = 25°C (μA) 16 GV (dB) Voltage gain 1 2 3 4 5 6 Supply current IDD 80 12 8 40 4 0 0 7 0 10 100 1k 10 k 100 k 1M 10 M Supply voltage VDD (V) Frequency f (Hz) Isink – VDD 1000 VSS = GND Ta = 25°C 800 2.0 VOL – Isink VDD = 1.8 V VSS = GND Ta = 25°C VOL (V) Low-level output voltage 1.6 Sink current Isink (μA) 600 1.2 400 0.8 200 0.4 0 0 1 2 3 4 5 6 7 0 0 200 400 600 800 Supply voltage VDD (V) Sink current Isink (μA) VOL – Isink 3 5 VDD = 3.0 V VSS = GND Ta = 25°C 2 VOL – Isink VDD = 5.0 V VSS = GND Ta = 25°C VOL (V) VOL (V) Low-level output voltage 4 Low-level output voltage 3 2 1 1 0 0 200 400 600 800 0 0 200 400 600 800 Sink current Isink (μA) Sink current Isink (μA) 5 2007-11-01 TC75S55F/FU/FE Isource – VDD 50 VSS = GND Ta = 25°C 2.0 VOH – Isource VDD = 1.8 V VSS = GND Ta = 25°C (μA) (V) High-level output voltage VOH 1.6 1.2 0.8 0.4 0 0 40 Source current Isource 30 20 10 0 0 1 2 3 4 5 6 7 4 8 12 16 20 24 28 Supply voltage VDD (V) Source current Isource (μA) VOH – Isource 3 VOH – Isource (V) VDD = 3.0 V VSS = GND Ta = 25°C 5 (V) High-level output voltage VOH 2 High-level output voltage VOH 4 3 2 1 1 VDD = 5.0 V VSS = GND Ta = 25°C 4 8 12 16 20 24 28 0 0 4 8 12 16 20 24 28 0 0 Source current Isource (μA) Source current Isource (μA) VOH – RL 2.0 VDD = 1.8 V VSS = GND Ta = 25°C 3 VOH – RL (V) VDD = 3.0 V VSS = GND Ta = 25°C 2 (V) High-level output voltage VOH 1.6 1.2 0.8 High-level output voltage VOH 100 k 1M 1 0.4 0 10 k 10 M 0 10 k 100 k 1M 10 M Load resistance RL (Ω) Load resistance RL (Ω) 6 2007-11-01 TC75S55F/FU/FE VOH – RL 5 VDD = 5.0 V VSS = GND Ta = 25°C 300 PD – Ta This data was obtained from an unmounted standalone IC. If the IC is mounted on a PCB, its power dissipation will be greater. Note that, depending on the PCB’s thermal characteristics, the curves may differ substantially from those shown. (V) High-level output voltage VOH 4 (mW) Power dissipation PD 100 k 1M 200 100 0 −40 3 2 1 0 10 k 10 M 0 40 80 120 Load resistance RL (Ω) Ambient temperature Ta (°C) 7 2007-11-01 TC75S55F/FU/FE Package Dimensions Weight: 0.014 g (typ.) 8 2007-11-01 TC75S55F/FU/FE Package Dimensions Weight: 0.006 g (typ.) 9 2007-11-01 TC75S55F/FU/FE Package Dimensions Weight: 0.003 g (typ.) 10 2007-11-01 TC75S55F/FU/FE RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2007-11-01