TC75S58AFC

TC75S58AFE/AFC TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S58AFE,TC75S58AFC Single Comparator (Open-Drain Output) TC75S58AFE The TC75S58AFE and TC75S58AFC are CMOS general-purpose single comparators. The devices can operate from a single supply voltage and are designed for a lower supply-current than conventional general-purpose bipolar comparators. The output is designed for Open-Drain Output and can supply a higher voltage than the power supply. Therefore, it is possible to pull-up the voltage to a level higher than that of the power supply. The Open-Drain Output can be wired-OR with another Open-Drain Output circuit. * Output voltage should not exceed the maximum rating. TC75S58AFC Feature • • • • • • Low Supply Current: IDD = 10 μA (typ.) Single Power Supply Operation Wide Common Mode Input : VSS to VDD − 0.9 V Open-Drain Output Circuit Low Input Bias Current Small Package CSON6-P-0.45 Weight SON5-P-0.50 : 0.003 g (typ.) CSON6-P-0.45 : 0.002 g (typ.) Marking (top view) TC75S58AFE 5 4 Pin Assignment (top view) TC75S58AFE VDD 5 OUT 4 TG 1 2 3 1 IN (−) 2 VSS 3 IN (+) TC75S58AFC Marking 6 5 4 TC75S58AFC VDD 6 NC 5 OUT 4 TG 1 2 3 Monthly Indication 1 2 3 IN (-) Vss IN (+) 1 2009-01-16 TC75S58AFE/AFC Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply Voltage Differential Input Voltage Input Voltage Output Current Output Voltage Power Dissipation Operating Temperature Storage Temperature Symbol VDD, VSS DVIN VIN IO VO PD Topr Tstg Rating ±3.5 or 7 ±7 VSS to VDD ±35 VSS to VSS + 7 TC75S58AFE TC75S58AFC 100 100 (Note1) Unit V V V mA V mW °C °C −40 to 85 −55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: Due to the CMOS structure, this device may be susceptible to latch-up . To prevent latch-up, please take the following precautions; • Ensure that no Input pin voltage level ever exceeds Vdd or drops below Vss. In addition, check the power-on timing. • Do not subject the device to excessive noise. (Note 1): FR4 in board implementation: (25.4mm × 25.4mm × 1.6t, Cu Pad: 0.4mm2) 2 2009-01-16 TC75S58AFE/AFC Electrical Characteristics (VDD = 5 V, VSS = GND, Ta = 25°C) Characteristics Input Offset Voltage Input Offset Current Input Bias Current Common Mode Input Voltage Supply Current Voltage Gain Sink Current Output Leakage Current Off-State Leakage Current Output-Low Voltage Operating Supply Voltage Range Propagation Delay (Turn On) Propagation Delay (Turn Off) Response Time Symbol VIO IIO II CMVIN IDD (Note) GV Isink ILEAK IOFF VOL VDD tPLH (1) tPLH (2) tPHL (1) tPHL (2) tTLH tTHL Test Circuit ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VOL = 0.5 V VDD = 5 V , VO = 5 V VDD = 0 V , VO = 5 V Isink = 5.0 mA ⎯ Over Drive = 100 mV TTL Step Input Over Drive = 100 mV TTL Step Input Over Drive = 100 mV Over Drive = 100 mV Test Condition ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Min ⎯ ⎯ ⎯ 0 ⎯ ⎯ 13 ⎯ ⎯ ⎯ 1.8 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ±1 1 1 ⎯ 11 94 25 5 5 0.1 ⎯ 800 620 230 350 190 6 Max ±7 ⎯ ⎯ 4.1 22 ⎯ ⎯ ⎯ ⎯ 0.3 7.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Unit mV pA pA V μA dB mA nA nA V V ns ns ns Electrical Characteristics (VDD = 3 V, VSS = GND, Ta = 25°C) Characteristics Input Offset Voltage Input Offset Current Input Bias Current Common Mode Input Voltage Supply Current Sink Current Output Leakage Current Off-State Leakage Current Output-Low Voltage Propagation Delay (Turn On) Propagation Delay (Turn Off) Response Time Symbol VIO IIO II CMVIN IDD (Note) Isink ILEAK IOFF VOL tPLH tPHL tTLH tTHL Test Circuit ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VOL = 0.5 V VDD = 3 V , VO = 3 V VDD = 0 V , VO = 3 V Isink = 5.0 mA Over Drive = 100 mV Over Drive = 100 mV Over Drive = 100 mV Over Drive = 100 mV Test Condition ⎯ ⎯ ⎯ ⎯ ⎯ Min ⎯ ⎯ ⎯ 0 ⎯ 6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ±1 1 1 ⎯ 10 18 5 5 0.15 590 230 170 5 Max ±7 ⎯ ⎯ 2.1 20 ⎯ ⎯ ⎯ 0.35 ⎯ ⎯ ⎯ ⎯ Unit mV pA pA V μA mA nA nA V ns ns ns Note: The current consumption of this device increases as its operating frequency increases. Note that the power dissipation should not exceed the allowable power. 3 2009-01-16 TC75S58AFE/AFC IDD – f 1000 VDD = 3 V (μA) VSS = GND Ta = 25°C 100 Supply Current IDD 10 1 0.001 0.01 0.1 1 10 100 1000 Frequency f (kHz) IDD – f 1000 VDD = 5 V (μA) VSS = GND Ta = 25°C 100 Supply Current IDD 10 1 0.001 0.01 0.1 1 10 100 1000 Frequency f (kHz) 4 2009-01-16 TC75S58AFE/AFC VOL – Isink 3.0 5.0 VDD = 3 V 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 VDD = 5 V VSS = GND Ta = 25°C VOL – Isink VOL (V) 2.5 VSS = GND Ta = 25°C 2.0 Output-Low Voltage 1.5 1.0 0.5 0.0 0 5 10 15 20 25 30 35 40 Output-Low Voltage VOL (V) 15 20 25 30 35 40 Sink Current Isink (mA) Sink Current Isink (mA) PD – Ta 300 This data was on on a obtained PCB, the from its an unmounted standalone IC. If the IC is mounted 200 depending power thermal dissipation will be greater. Note that, (mW) PD PCB’s characteristics, the curves may differ substantially from those shown. Power Dissipation 100 0 −40 0 40 80 120 Ambient Temperature Ta (°C) 5 2009-01-16 TC75S58AFE/AFC Package Dimension Weight: 0.003 g (typ.) 6 2009-01-16 TC75S58AFE/AFC Package Dimension CSON6-P-0.45 Weight: 0.002 g (typ.) 7 2009-01-16 TC75S58AFE/AFC RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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