TC75S58F,LF

TC75S58F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S58F, TC75S58FU Single Comparator The TC75S58F/TC75S58FU is a CMOS general-purpose single comparator. The device can operate off a single power supply and draws a lower supply current than a conventional bipolar general-purpose comparator. This device’s open-drain output stage can be wire-ORed with those of other open-drain output circuits. TC75S58F Features • Low-current power supply • Single power supply operation : VDD = ±0.9 to ±3.5 V or 1.8 to 7 V • Wide common mode input voltage range : VSS to VDD − 0.9 V • Open drain output circuit • Low input bias current • Small package (SMV) : IDD = 10 μA (typ.) TC75S58FU (USV) Weight SSOP5-P-0.95 : 0.014 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) Marking (top view) 5 Pin Connection (top view) 4 VDD OUT 5 4 TE 1 2 1 IN (−) 3 2 VSS 3 IN (+) Start of commercial production 1997-02 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-09-11 TC75S58F/FU Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VDD, VSS ±3.5 or 7 V DVIN ±7 V Input voltage VIN VSS to VDD V Output current IO ±35 mA Power dissipation PD 200 mW Operating temperature Topr −40 to 85 °C Storage temperature Tstg −55 to 125 °C Supply voltage Differential input voltage Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This device’s CMOS structure makes it prone to latch-up. To prevent latch-up, please take the following precautions: • Ensure that no I/O pin’s voltage level ever exceeds VDD or drops below VSS. In addition, check the power-on timing. • Do not subject the device to excessive noise. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-09-11 TC75S58F/FU Electrical Characteristics (VDD = 5 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage VIO    ±1 ±7 mV Input offset current IIO    1  pA II    1  pA Common mode input voltage CMVIN   0  4.1 V Supply current IDD (Note) Characteristics Input bias current    11 22 µA Voltage gain GV    94  dB Sink current Isink  VOL = 0.5 V 13 25  mA ILEAK  VO = 5 V  5  nA Output voltage VOL  Isink = 5.0 mA  0.1 0.3 V Operating supply voltage VDD  1.8  7.0 V tPLH (1)  Over drive = 100 mV  800  tPLH (2)  TTL step input  620  tPHL (1)  Over drive = 100 mV  230  TTL step input  350  Over drive = 100 mV  190  Over drive = 100 mV  6  Output leak current Propagation delay time (turn on) Propagation delay time (turn off) tPHL (2) Response time tTLH tTHL     ns ns ns Electrical Characteristics (VDD = 3 V, VSS = GND, Ta = 25°C) Symbol Test Circuit Test Condition Min Typ. Max Unit Input offset voltage VIO    ±1 ±7 mV Input offset current IIO    1  pA Characteristics II    1  pA Common mode input voltage CMVIN   0  2.1 V Supply current IDD (Note)    10 20 µA Input bias current Isink  VOL = 0.5 V 6 18  mA ILEAK  VO = 3 V  5  nA Output voltage VOL  Isink = 5.0 mA  0.15 0.35 V Propagation delay time (turn on) tPLH  Over drive = 100 mV  590  ns Propagation delay time (turn off) tPHL  Over drive = 100 mV  230  ns   Over drive = 100 mV  170  Over drive = 100 mV  5  Sink current Output leak current Response time tTLH tTHL ns Note: This device’s current consumption increases as its operating frequency increases. Note that the power dissipation should not exceed the allowable power dissipation. © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-09-11 TC75S58F/FU IDD – f 1000 VDD = 3 V Supply current IDD (µA) VSS = GND Ta = 25°C 100 10 1 0.001 0.01 0.1 1 Frequency f 10 100 1000 10 100 1000 (kHz) IDD – f 1000 VDD = 5 V Supply current IDD (µA) VSS = GND Ta = 25°C 100 10 1 0.001 0.01 0.1 1 Frequency f (kHz) The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 4 2019-09-11 TC75S58F/FU VOL – Isink VOL – Isink 3.0 5.0 VDD = 3 V 2.5 4.5 VSS = GND 4.0 (V) VOL 1.5 VSS = GND Ta = 25°C 3.5 Output voltage VOL 2.0 Output voltage (V) Ta = 25°C VDD = 5 V 1.0 0.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 Sink current 25 Isink 30 35 0.0 0 40 (mA) 5 10 15 Sink current 20 25 Isink 30 35 40 (mA) PD – Ta The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 5 2019-09-11 TC75S58F/FU Package Dimensions Weight: 0.014 g (typ.) © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-09-11 TC75S58F/FU Package Dimensions Weight: 0.006 g (typ.) © 2019 Toshiba Electronic Devices & Storage Corporation 7 2019-09-11 TC75S58F/FU RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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