TC75S60FU

TC75S60F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S60F,TC75S60FU Single Operational Amplifier TC75S60F, TC75S60FU are CMOS operational amplifier with low supply voltage, low supply current. TC75S60F Features • • • • • High slew rate: SR (VDD = 3 V) = 5.1 V/μs (typ.) The power supply operation range is: VDD = ±0.9~3.5 V or 1.8~7 V Low supply current: IDD (VDD = 3 V) = 330 μA (typ.) The internally phase compensated operational amplifier. Small package TC75S60FU Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Differential input voltage Input voltage Power dissipation Operating temperature Storage temperature Symbol VDD, VSS DVIN VIN PD Topr Tstg Rating 7 ±7 VDD~VSS 200 −40~85 −55~125 Unit V V V mW °C °C Weight SSOP5-P-0.95 SSOP5-P-0.65A : 0.014 g (typ.) : 0.006 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 TC75S60F/FU Marking (top view) Pin Connection (top view) VDD 5 4 5 OUT 4 SH 1 IN (+) 2 VSS 3 IN (−) 1 2 3 Electrical Characteristics DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Characteristics Input offset voltage Input offset current Input bias current Common mode input voltage Voltage gain (open loop) Maximum output voltage Common mode rejection ratio Supply voltage rejection ratio Supply current Source current Sink current Symbol VIO IIO II CMVIN GV VOH VOL CMRR SVRR IDD Isource Isink Test Circuit 1 ⎯ ⎯ 2 ⎯ 3 4 2 1 5 6 7 RL = 100 kΩ RL = 100 kΩ VIN = 0.0~2.1 V VDD = 1.8~7.0 V ⎯ ⎯ ⎯ Test Condition RS = 1 kΩ ⎯ ⎯ ⎯ ⎯ Min ⎯ ⎯ ⎯ 0.0 60 2.9 ⎯ 54 60 ⎯ 330 600 Typ. 2 1 1 ⎯ 70 ⎯ ⎯ 70 70 330 700 1250 Max 7 ⎯ ⎯ 2.1 ⎯ ⎯ 0.1 ⎯ ⎯ 500 ⎯ ⎯ Unit mV pA pA V dB V dB dB μA μA μA DC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C) Characteristics Input offset voltage Input offset current Input bias current Common mode input voltage Voltage gain (open loop) maximum output voltage Common mode rejection ratio Supply current Source current Sink current Symbol VIO IIO II CMVIN GV VOH VOL CMRR IDD Isource Isink Test Circuit 1 ⎯ ⎯ 2 ⎯ 3 4 2 5 6 7 RL = 100 kΩ RL = 100 kΩ VIN = 0.3~0.9 V ⎯ ⎯ ⎯ Test Condition RS = 10 kΩ ⎯ ⎯ ⎯ ⎯ Min ⎯ ⎯ ⎯ 0.3 ⎯ 1.7 ⎯ 50 ⎯ 300 550 Typ. 2 1 1 ⎯ 70 ⎯ ⎯ 60 300 600 1150 Max 7 ⎯ ⎯ 0.9 ⎯ ⎯ 0.1 ⎯ 450 ⎯ ⎯ Unit mV pA pA V dB V dB μA μA μA 2 2007-11-01 TC75S60F/FU AC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Characteristics Slew rate Unity gain cross frequency Symbol SR fT Test Circuit ⎯ ⎯ Test Condition ⎯ ⎯ Min ⎯ ⎯ Typ. 5.1 3.7 Max ⎯ ⎯ Unit V/μs MHz AC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C) Characteristics Slew rate Unity gain cross frequency Symbol SR fT Test Circuit ⎯ ⎯ Test Condition ⎯ ⎯ Min ⎯ ⎯ Typ. 4.0 3.0 Max ⎯ ⎯ Unit V/μs MHz Test Circuit 1. SVRR, VIO VDD RF RS VOUT RS RF • VIO ⎛ RS VDD ⎞ ⎟× VIO = ⎜ V OUT − ⎜ 2 ⎟ RF + RS ⎝ ⎠ • SVRR VDD = 1.8 V: VDD = VDD1, VOUT = VOUT1 VDD = 7.0 V: VDD = VDD2, VOUT = VOUT2 ⎛V 1 − V OUT 2 RS SVRR = 20 log ⎜ OUT × ⎜ V 1− V RF + RS DD DD 2 ⎝ ⎞ ⎟ ⎟ ⎠ VDD/2 2. CMRR, CMVIN VDD RF RS VOUT RF VIN RS VDD/2 • • CMRR VIN = 0.0 V: VIN = VIN1, VOUT = VOUT1 VIN = 2.1 V: VIN = VIN2, VOUT = VOUT2 ⎛V 1 − V OUT 2 RS CMRR = 20 log ⎜ OUT × ⎜ RF + RS VIN1 − VIN 2 ⎝ ⎞ ⎟ ⎟ ⎠ CMVIN 3 2007-11-01 TC75S60F/FU 3. VOH VDD • VOH VIN1 = VDD − 0.05 V 2 VOH RL VIN2 = VDD + 0.05 V 2 VIN1 VIN2 4. VOL VDD • VOL VIN1 = VDD + 0.05 V 2 VDD − 0.05 V 2 RL VOL VIN2 = VIN1 VIN2 5. IDD VDD M IDD VDD/2 6. Isource VDD 7. Isink VDD M M VDD 2 VDD − 0.1 V 2 4 2007-11-01 TC75S60F/FU IDD – VDD 500 Ta = 85°C 2.0 Isink – VDD Supply current IDD Sink current Isink Ta = −40°C Ta = 25°C 250 (mA) (A) 1.6 Ta = −40°C 1.2 Ta = 25°C 0.8 Ta = 85°C 0.4 VSS = GND VIN = VDD/2 0 0 1 2 3 4 5 6 7 0 0 1 2 3 4 5 VSS = GND 6 7 Supply voltage VDD (V) Supply voltage VDD (V) VOL – Isink 2.0 Ta = 85°C 3 VOL – Isink (V) (V) 1.6 Ta = 85°C Output voltage VOL Output voltage VOL 1.2 Ta = 25°C Ta = −40°C 2 Ta = 25°C Ta = −40°C 0.8 1 0.4 VDD = 1.8 V VSS = GND 0 0 0.5 1.0 1.5 VDD = 3 V 0 0 VSS = GND 0.5 1.0 1.5 Sink current Isink (mA) Sink current Isink (mA) VOL – Isink 5 VDD = 5 V 4 VSS = GND 1.5 Isource – VDD (V) (mA) Source current Isource 1.0 Ta = 85°C Output voltage VOL 3 Ta = 25°C Ta = −40°C Ta = 85°C Ta = 25°C Ta = −40°C 0.5 2 1 VSS = GND 0 0 0.5 1.0 1.5 0 0 1 2 3 4 5 6 7 Sink current Isink (mA) Supply voltage VDD (V) 5 2007-11-01 TC75S60F/FU VOH – Isource 2.0 3 VOH – Isource (V) Output voltage VOH 1.2 Output voltage VOH (V) 1.6 2.5 Ta = −40°C Ta = 85°C Ta = 25°C 0.8 Ta = −40°C Ta = 25°C Ta = 85°C VDD = 1.8 V VSS = GND 0.4 VDD = 3 V 1 0 0 VSS = GND 0.5 1 0 0 0.5 Source current Isource (mA) Source current Isource (mA) VOH – Isource 5 2 VOH – RL (V) Output voltage VOH 2.5 Ta = 25°C Ta = 85°C Output voltage VOH Ta = −40°C (V) 1 Ta = 85°C Ta = −40°C Ta = 25°C VDD = 5 V VSS = GND 0 0 0.5 1 0 100 1k 10 k VDD = 1.8 V VSS = GND 100 k 1M Source current Isource (mA) Load resistance RL (Ω) VOH – RL 3 5 VOH – RL 2.5 (V) (V) Ta = 85°C Ta = −40°C 2.5 Output voltage VOH Ta = 85°C Ta = −40°C Ta = 25°C Output voltage VOH Ta = 25°C VDD = 3 V 0 100 VSS = GND 1k 10 k 100 k 1M 0 100 1k 10 k VDD = 5 V VSS = GND 100 k 1M Load resistance RL (Ω) Load resistance RL (Ω) 6 2007-11-01 TC75S60F/FU Pulse response (rise) 1.1 0.9 0.7 Input waveform Ta = 85°C 0.7 1.1 0.9 Pulse response (fall) Output waveform Ta = −40°C (V) 0.5 (V) 0.5 Ta = −40°C Ta = 25°C Output waveform Ta = 25°C Voltage 0.3 0.1 0 Voltage 0.3 Input waveform 0.1 0 Ta = 85°C VDD = 1.8 V VSS = GND 0 100 200 300 400 VDD = 1.8 V VSS = GND 0 100 200 300 400 Time t (ns) Time t (ns) Pulse response (rise) 3 3 Pulse response (fall) VDD = 3 V VSS = GND Input waveform 2 Ta = 85°C Ta = −40°C Ta = 25°C 1 2 (V) (V) Output waveform Voltage Voltage 1 Ta = −40°C Ta = 25°C Ta = 85°C 0 Output waveform VDD = 3 V VSS = GND 400 600 800 0 Input waveform 0 200 400 600 800 0 200 Time t (ns) Time t (ns) Pulse response (rise) 6 6 Pulse response (fall) VDD = 5 V VSS = GND Input waveform 4 4 Ta = 85°C Ta = −40°C Ta = 25°C 2 (V) (V) Output waveform Voltage Voltage 2 Ta = −40°C Ta = 25°C Ta = 85°C Output waveform 0 VDD = 5 V VSS = GND 0 0.4 0.8 1.2 1.6 0 Input waveform 0 0.4 0.8 1.2 1.6 Time t (μs) Time t (μs) 7 2007-11-01 TC75S60F/FU GV – f 120 VDD = 3 V VSS = GND Ta = 25°C 300 PD – Ta When the IC is mounted on a PCB, the power dissipation may be higher than the values shown below. Power dissipation varies according to the PCB. GV (dB) 40 Power dissipation PD 100 1k 10 k 100 k 1M 10 M 80 (mW) 200 100 0 −40 Voltage gain 0 10 0 40 80 120 Frequency f (Hz) Ambient temperature Ta (°C) 8 2007-11-01 TC75S60F/FU Package Dimensions Weight: 0.014 g (typ.) 9 2007-11-01 TC75S60F/FU Package Dimensions Weight: 0.006 g (typ.) 10 2007-11-01 TC75S60F/FU RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2007-11-01