TC75S70L6X
CMOS Linear Integrated Circuits
Silicon Monolithic
TC75S70L6X
1. Functional Description
•
Single Comparator
2. General
This is a CMOS Input/Output full swing comparator with low operating voltage and low supply current.
The comparator have low operating voltage VDD = 1.3 V to 5.5 V and low supply current IDD = 18 µA (typ.) @VDD
= 1.5 V. Output circuit type is push-pull circuit. The package MP6C (1.0 mm × 1.45 mm, t: 0.55 mmMAX) is ultra
small, so that it is ideal for high-density assembly such as cellular phone.
3. Features
(1)
Single circuit, Input/Output full swing comparator
(2)
Low operating voltage: VDD = 1.3 V to 5.5 V
(3)
Low supply current: IDD = 18 µA (typ.) (@VDD = 1.5 V)
(4)
Ultra Small package: MP6C (1.0 mm × 1.45 mm, t = 0.55 mmMAX)
(5)
Low input bias current: 1 pA (typ.)
(6)
Push-pull output circuit
(7)
Single power supply operation
4. Packaging and Pin Assignment
MP6C
Start of commercial production
2013-12
©2020
Toshiba Electronic Devices & Storage Corporation
1
2020-11-26
Rev.3.0
TC75S70L6X
5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 �)
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
VDD
±3.0 or 6.0
V
Differential input voltage
∆VIN
±6.0
V
Input voltage
VIN
VSS to VDD
V
Output current
IOUT
±35
mA
Power dissipation
PD
250
mW
Operating temperature
Topr
(Note 1)
-40 to 85
�
Storage temperature
Tstg
-55 to 125
�
Junction temperature
Tj
125
�
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: Since this device is susceptible to latch-up, a phenomenon inherent to CMOS devices, follow these
considerations:
- Don't raise the voltage level of the output pins above VDD or lower it below VSS.
Consider the power-on timing as well.
- Ensure that any abnormal noise is not introduced into the device.
Note 1: Mounted on an FR4 board.
6. Operating Ratings (Unless otherwise specified, T a = 25 �)
Characteristics
Symbol
Rating
Unit
Supply voltage
VDD
1.3 to 5.5
V
Supply voltage
VDD,VSS
±0.65 to 2.75
V
7. Thermal Characteristics
Characteristics
Thermal resistance (junction-to-ambient)
(Note 1)
Symbol
Rating
Unit
Rth(j-a)
400
�/W
Note 1: Mounted on an FR4 board.
©2020
Toshiba Electronic Devices & Storage Corporation
2
2020-11-26
Rev.3.0
TC75S70L6X
8. Electrical Characteristics
8.1. V DD = 3.0 V (Unless otherwise specified, T a = 25 �, V SS = GND)
Characteristics
Symbol
Note
Test Condition
Test
Circuit
Min
Typ.
Max
Unit
Input offset voltage
VIO
�
�
�
±1
±6
mV
Input offset current
IIO
�
�
�
1
�
pA
II
�
�
�
1
�
pA
VICM
�
�
0
�
3.0
V
�
Input bias current
Common-mode input voltage range
Supply current
Fig.11.3
�
20
35
µA
ISINK
IDD
VOL = 0.5 V
Fig.11.2
9
18
�
mA
ISOURCE
VOH = 2.5 V
Fig.11.1
7
15
�
mA
ISINK = 5.0 mA
Fig.11.2
�
0.15
0.30
V
Sink current
Source current
(Note 1)
Low-level output voltage
VOL
High-level output voltage
VOH
ISOURCE = 5.0 mA
Fig.11.1
2.70
2.85
�
V
Propagation delay time (L/H)
tPLH
Over drive = 100 mV
Fig.11.4
�
400
�
ns
Propagation delay time (H/L)
tPHL
Over drive = 100 mV
Fig.11.4
�
800
�
ns
Response time (low-to-high)
tTLH
Over drive = 100 mV
Fig.11.4
�
14
�
ns
Response time (high-to-low)
tTHL
Over drive = 100 mV
Fig.11.4
�
14
�
ns
8.2. V DD = 1.5 V (Unless otherwise specified, T a = 25 �, V SS = GND)
Characteristics
Symbol
Note
Test Condition
Test
Circuit
Min
Typ.
Max
Unit
Input offset voltage
VIO
�
�
�
±1
±6
mV
Input offset current
IIO
�
�
�
1
�
pA
Input bias current
II
�
�
�
1
�
pA
Common-mode input voltage range
VICM
Supply current
IDD
Sink current
Source current
(Note 1)
�
�
0
�
1.5
V
�
Fig.11.3
�
18
34
µA
ISINK
VOL = 0.5 V
Fig.11.2
2.5
6.0
�
mA
ISOURCE
VOH = 1.0 V
Fig.11.1
1.5
5.0
�
mA
Low-level output voltage
VOL
ISINK = 1.5 mA
Fig.11.2
�
0.10
0.25
V
High-level output voltage
VOH
ISOURCE = 1.5 mA
Fig.11.1
1.25
1.40
�
V
Propagation delay time (L/H)
tPLH
Over drive = 100 mV
Fig.11.4
�
400
�
ns
Propagation delay time (H/L)
tPHL
Over drive = 100 mV
Fig.11.4
�
720
�
ns
Response time (low-to-high)
tTLH
Over drive = 100 mV
Fig.11.4
�
20
�
ns
Response time (high-to-low)
tTHL
Over drive = 100 mV
Fig.11.4
�
33
�
ns
Note 1: The current consumption of the device increases with its operating frequency. Ensure that its power dissipation
does not exceed the rated allowable power dissipation.
9. Marking
(Top View)
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Toshiba Electronic Devices & Storage Corporation
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2020-11-26
Rev.3.0
TC75S70L6X
10. Characteristics Curves (Note)
Fig. 10.1
Fig. 10.3
V OL - I SINK
Fig. 10.2
V OH - I SOURCE
Fig. 10.5
Fig. 10.4
V OL - T a
©2020
Toshiba Electronic Devices & Storage Corporation
V OL - I SINK
V OH - I SOURCE
Fig. 10.6
4
V OH - T a
2020-11-26
Rev.3.0
TC75S70L6X
Fig. 10.7
Fig. 10.9
Fig. 10.10
I DD - T a
Fig. 10.8
I DD - T a
I DD - V DD
Propagation delay time (L/H) t PLH
©2020
Toshiba Electronic Devices & Storage Corporation
5
Fig. 10.11
Propagation delay time (H/L) t PHL
2020-11-26
Rev.3.0
TC75S70L6X
Fig. 10.12
Propagation delay time (L/H) t PLH
Fig. 10.14
Note:
Fig. 10.13
Propagation delay time (H/L) t PHL
PD - Ta
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2020
Toshiba Electronic Devices & Storage Corporation
6
2020-11-26
Rev.3.0
TC75S70L6X
11. Test Circuits
Fig. 11.1
I SOURCE ,V OH
Fig. 11.3
Fig. 11.5
Fig. 11.2
I SINK ,V OL
I DD
Fig. 11.4
Propagation delay time t PLH ,t PHL
Propagation delay time (L/H) t PLH
Fig. 11.6
Propagation delay time (H/L) t PHL
wave
©2020
Toshiba Electronic Devices & Storage Corporation
wave
7
2020-11-26
Rev.3.0
TC75S70L6X
Package Dimensions
Unit: mm
Weight: 0.0024 g (typ.)
Package Name(s)
TOSHIBA: P-UFLGA6-0102-0.50-003
Nickname: MP6C
©2020
Toshiba Electronic Devices & Storage Corporation
8
2020-11-26
Rev.3.0
TC75S70L6X
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2020-11-26
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