TC75W60FK

TC75W60FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC75W60FU, TC75W60FK Dual Operational Amplifier TC75W60FU Features • • • • • High slew rate : SR (VDD = 3 V) = 5.1 V/μs (typ.) Single and dual power Supply operations are possible. : VDD = ±0.9 to 3.5 V or 1.8 to 7 V Lower supply current than general-purpose bipolar type op amps : IDD (VDD = 3 V) = 660 μA (typ.) The internally phase compensated operational amplifier. Small package TC75W60FK Weight SSOP8-P-0.65 : 0.021 g (typ.) SSOP8-P-0.50A : 0.01 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Differential input voltage Input voltage Power dissipation TC75W60FU TC75W60FK Symbol VDD, VSS DVIN VIN PD Topr Tstg Rating 7 ±7 VDD to VSS 250 200 −40 to 85 −55 to 125 Unit V V V mW °C °C Operating temperature Storage temperature Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-11-01 TC75W60FU/FK Marking (top view) TC75W60FU 8 7 6 5 Type name Lot No. TC75W60FK 8 7 6 5 Pin Connection (top view) VDD 8 OUT IN (−) IN (+) 7 6 5 5W60 5W 60 1 2 3 4 1 2 3 4 OUT IN (−) IN (+) VSS 1 2 3 4 Electrical Characteristics DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Characteristics Input offset voltage Input offset current Input bias current Common mode input voltage Voltage gain (open loop) Maximum output voltage Common mode rejection ratio Suuply voltage rejection ratio Supply current Source current Sink current Symbol VIO IIO II CMVIN GV VOH VOL CMRR SVRR IDD Isource Isink Test Circuit ⎯ ⎯ ⎯ Test Condition RS = 1 k Ω ⎯ ⎯ ⎯ ⎯ RL = 100 kΩ RL = 100 kΩ VIN = 0.0 to 2.1 V VDD = 1.8 to 7.0 V ⎯ ⎯ ⎯ Min ⎯ ⎯ ⎯ 0.0 60 2.9 ⎯ 54 60 ⎯ 330 600 Typ. 2 1 1 ⎯ 70 ⎯ ⎯ 70 70 660 700 1250 Max 7 ⎯ ⎯ 2.1 ⎯ ⎯ 0.1 ⎯ ⎯ 1000 ⎯ ⎯ Unit mV pA pA V dB V dB dB μA μA μA ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ DC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C) Characteristics Input offset voltage Input offset current Input bias current Common mode input voltage Voltage gain (open loop) maximum output voltage Common mode rejection ratio Supply current Source current Sink current Symbol VIO IIO II CMVIN GV VOH VOL CMRR IDD Isource Isink Test Circuit Test Condition RS = 1 kΩ ⎯ ⎯ ⎯ ⎯ RL = 100 kΩ RL = 100 kΩ VIN = 0.3 to 0.9 V ⎯ ⎯ ⎯ Min ⎯ ⎯ ⎯ 0.3 ⎯ 1.7 ⎯ 50 ⎯ 300 550 Typ. 2 1 1 ⎯ 70 ⎯ ⎯ 60 600 700 1150 Max 7 ⎯ ⎯ 0.9 ⎯ ⎯ 0.1 ⎯ 900 ⎯ ⎯ Unit mV pA pA V dB V dB μA μA μA ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2 2007-11-01 TC75W60FU/FK AC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C) Characteristics Slew rate Unity gain cross frequency Symbol SR fT Test Circuit ⎯ ⎯ Test Condition ⎯ ⎯ Min ⎯ ⎯ Typ. 5.1 3.7 Max ⎯ ⎯ Unit V/μs MHz AC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C) Characteristics Slew rate Unity gain cross frequency Symbol SR fT Test Circuit ⎯ ⎯ Test Condition ⎯ ⎯ Min ⎯ ⎯ Typ. 4.0 3.0 Max ⎯ ⎯ Unit V/μs MHz TEST CIRCUIT (1) SVRR, VIO VDD RF RS VOUT RS RF • • SVRR VDD = 1.5 V : VDD = VDD1, VOUT = VOUT1 VDD = 7.0 V : VDD = VDD2, VOUT = VOUT2 ⎛V 1 − V OUT 2 RS SVRR = 20 log ⎜ OUT × ⎜ V 1− V 2 RF + RS DD DD ⎝ ⎞ ⎟ ⎟ ⎠ VIO ⎛ RS VDD ⎞ ⎟× VIO = ⎜ V OUT − ⎜ 2 ⎟ RF + RS ⎝ ⎠ VDD/2 (2) CMRR, CMVIN VDD RF RS VOUT RF VIN RS • CMRR VIN = 0.0 V : VIN = VDD1, VOUT = VOUT1 VIN = 2.5 V : VIN = VDD2, VOUT = VOUT2 ⎛V 1 − V OUT 2 RS CMRR = 20 log ⎜ OUT × ⎜ RF + RS VIN1 − VIN 2 ⎝ ⎞ ⎟ ⎟ ⎠ • CMVIN VDD/2 3 2007-11-01 TC75W60FU/FK (3) VOH VDD • VOH VIN1 = VDD − 0.05 V 2 VOH RL VIN2 = VDD + 0.05 V 2 VIN1 VIN2 (4) VOL VDD • VOL VIN1 = VDD + 0.05 V 2 VDD − 0.05 V 2 RL VOL VIN2 = VIN1 VIN2 (5) IDD VDD M IDD VDD/2 (6) Isource (7) Isink VDD VDD M M VDD 2 VDD − 0.1 V 2 4 2007-11-01 TC75W60FU/FK IDD – VDD 1000 Ta = 85°C 2.0 Isink – VDD (μA) (mA) 800 1.6 Ta = −40°C IDD 600 Ta = −40°C Ta = 25°C Isink 1.2 Ta = 25°C 0.8 Ta = 85°C Supply current 400 200 VSS = GND VIN = VDD/2 0 0 1 2 3 4 5 6 7 Sink current 0.4 VSS = GND 0 0 1 2 3 4 5 6 7 Supply voltage VDD (V) Supply voltage VDD (V) VOL – Isink 2.0 3 Ta = 85°C 1.6 VOL – Isink (V) (V) Ta = 85°C VOL VOL 2 “L” level output voltage 1.2 Ta = −40°C “L” level output voltage Ta = 25°C Ta = 25°C Ta = −40°C 0.8 1 0.4 VDD = 1.8 V VSS = GND 0 0 0.5 1.0 1.5 VDD = 3 V 0 0 VSS = GND 0.5 1.0 1.5 Sink current Isink (mA) Sink current Isink (mA) VOL – Isink 5 1.5 VDD = 5 V 4 Ta = 85°C Isource – VDD (V) Isource (mA) VSS = GND VOL 1.0 “L” level output voltage 3 Ta = 25°C Ta = −40°C Ta = 85°C Source current Ta = 25°C Ta = −40°C 0.5 2 1 VSS = GND 0 0 1 2 3 4 5 6 7 0 0 0.5 1.0 1.5 Sink current Isink (mA) Supply voltage VDD (V) 5 2007-11-01 TC75W60FU/FK VOH – Isource 2.0 3 VOH – Isource (V) (V) VOH “H” level output voltage 1.2 “H” level output voltage VOH 1.6 2.5 Ta = −40°C Ta = 85°C Ta = 25°C 0.8 Ta = −40°C Ta = 25°C Ta = 85°C VDD = 1.8 V VSS = GND 0.4 VDD = 3 V 0 0 VSS = GND 0.5 1 0 0 0.5 1 Source current Isource (mA) Source current Isource (mA) VOH – Isource 5 2 VOH – RL (V) VOH (V) Ta = −40°C Ta = 85°C Ta = 25°C “H” level output voltage “H” level output voltage VOH 2.5 1 Ta = 85°C Ta = −40°C Ta = 25°C VDD = 5 V VSS = GND 0 0 0.5 1 VDD = 1.8 V VSS = GND 0 100 1k 10 k 100 k 1M Source current Isource (mA) Load resistance RL (Ω) VOH – RL 3 5 VOH – RL (V) (V) 2.5 VOH VOH Ta = 85°C Ta = −40°C 2.5 “H” level output voltage Ta = 25°C “H” level output voltage Ta = 85°C Ta = −40°C Ta = 25°C VDD = 3 V 0 100 VSS = GND 1k 10 k 100 k 1M VDD = 5 V VSS = GND 0 100 1k 10 k 100 k 1M Load resistance RL (Ω) Load resistance RL (Ω) 6 2007-11-01 TC75W60FU/FK Pulse response 1.1 0.9 0.7 Input Ta = 85°C (Rise) 1.1 0.9 0.7 Pulse response (Fall) Output Ta = −40°C Ta = 25°C (V) Ta = −40°C 0.5 Ta = 25°C (V) 0.5 Voltage 0.3 0.1 0 Voltage Output 0.3 Input 0.1 0 Ta = 85°C VDD = 1.8 V VSS = GND 0 100 200 300 400 VDD = 1.8 V VSS = GND 0 100 200 300 400 time (ns) time (ns) Pulse response 3 (Rise) 3 Pulse response (Fall) VDD = 3 V VSS = GND Input 2 (V) Ta = −40°C Ta = 25°C 1 (V) Ta = 85°C 2 Output Voltage Voltage 1 Ta = −40°C Ta = 25°C Ta = 85°C 0 Output VDD = 3 V VSS = GND 400 600 800 0 Input 0 200 400 600 800 0 200 time (ns) time (ns) Pulse response 6 (Rise) 6 Pulse response (Fall) VDD = 5 V VSS = GND Input 4 4 Ta = 85°C Ta = −40°C Ta = 25°C 2 (V) (V) Output Voltage Voltage 2 Ta = −40°C Ta = 25°C Ta = 85°C Output 0 VDD = 5 V VSS = GND 0 0.4 0.8 1.2 1.6 0 Input 0 0.4 0.8 1.2 1.6 time (μs) time (μs) 7 2007-11-01 TC75W60FU/FK GV – f 120 VDD = 3 V Ta = 25°C 80 300 VSS = GND PD – Ta Note) (dB) (mW) SM8 PD GV 200 US8 Power dissipation 100 1k 10 k 100 k 1M 10 M Voltage gain 40 100 0 10 0 −40 0 40 80 120 Frequency f (Hz) Ambient temperature Ta (°C) Note): These power dissipation curves are given by measurement of only IC on the air and, in general, it become higher when mounted on PCB. Since the power dissipation depends on mounted condition, please be sure to design. 8 2007-11-01 TC75W60FU/FK Package Dimensions Weight: 0.021 g (typ.) 9 2007-11-01 TC75W60FU/FK Package Dimensions Weight: 0.01 g (typ.) 10 2007-11-01 TC75W60FU/FK RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 2007-11-01