TC7SB3157DL6X,L

TC7SB3157DL6X CMOS Digital Integrated Circuits Silicon Monolithic TC7SB3157DL6X 1. Functional Description • Single 1-of-2 Multiplexer/Demultiplexer 2. General The TC7SB3157DL6X is a high-speed CMOS single 1-of-2 multiplexer/demultiplexer. The low ON resistance of the switch allows connections to be made with minimal propagation delay time. This device is 1 to 2 multiplexer/demultiplexer controlled by the select input (S). The A input is connected to B1 or B2 output based on the selection of Control input (S). All inputs are equipped with protection circuits against static discharge. 3. Features (1) Operating voltage: VCC = 1.65 to 5.5 V (2) ON capacitance: CI/O = 15 pF Switch On (typ.) @VCC = 5.0 V (3) ON resistance: RON = 4 Ω (typ.) @VCC = 4.5 V, VIS = 0 V (4) Package: MP6D 4. Packaging MP6D Start of commercial production 2017-06 ©2017-2021 Toshiba Electronic Devices & Storage Corporation 1 2021-09-07 Rev.3.0 TC7SB3157DL6X 5. Pin Assignment 6. Marking 7. Block Diagram ©2017-2021 Toshiba Electronic Devices & Storage Corporation 2 2021-09-07 Rev.3.0 TC7SB3157DL6X 8. Principle of Operation 8.1. Truth Table Inputs S Function L A port = B1 port H A port = B2 port 9. Absolute Maximum Ratings (Note) Characteristics Symbol Note Rating Unit V Supply voltage VCC -0.5 to 6.5 Input voltage (S) VIN -0.5 to 6.5 Switch I/O voltage VS -0.5 to VCC Clamp diode current IIK -50 Switch I/O current IS Power dissipation PD VCC/ground current Storage temperature mA 50 (Note 1) 250 mW ICC/IGND ±100 mA Tstg -65 to 150 � Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 10. Operating Ranges (Note) Characteristics Symbol Note Rating Unit 1.65 to 5.5 V Supply voltage VCC Input voltage(S) VIN 0 to 5.5 Switch I/O voltage VS 0 to VCC Operating temperature Topr -40 to 85 � Input rise time dt/dv 0 to 10 ns/V Input fall time dt/dv 0 to 10 Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused control inputs must be tied to either VCC or GND. ©2017-2021 Toshiba Electronic Devices & Storage Corporation 3 2021-09-07 Rev.3.0 TC7SB3157DL6X 11. Electrical Characteristics 11.1. DC Characteristics (Unless otherwise specified, T a = -40 to 85 �) Characteristics Symbol High-level input voltage (S) Test Condition VCC (V) Min Typ. Max Unit VIH � 1.65 to 1.95 0.8 × VCC � � V 2.3 to 5.5 0.7 × VCC � � Low-level input voltage (S) VIL � 1.65 to 1.95 � � 0.2 × VCC 2.3 to 5.5 � � 0.3 × VCC Input leakage current IIN VIN = 0 to 5.5 V 1.65 to 5.5 � � ±1.0 Switch OFF-state leakage current ISZ B1, B2 = 0 to VCC 1.65 to 5.5 � � ±10 (Note 1), VIS = 0 V, IIS = 30 mA (Note 2) V = 2.4 V, I = 30 mA IS IS 4.5 � 4 7 4.5 � 5 12 VIS = 4.5 V, IIS = 30 mA 4.5 � 6 10 VIS = 0 V, IIS = 24 mA 3.0 � 5 9 VIS = 3.0 V, IIS = 24 mA 3.0 � 7 14 VIS = 0 V, IIS = 8 mA 2.3 � 6 12 VIS = 2.3 V, IIS = 8 mA 2.3 � 9 18 VIS = 0 V, IIS = 4 mA 1.65 � 8 20 VIS = 1.65 V, IIS = 4 mA 1.65 � 15 30 VIN = VCC or GND, IOUT = 0 A 5.5 � � 10 µA VIN = VCC - 0.6 V 5.5 � � 50 µA ON-resistance RON Quiescent supply current Note ICC ∆ICC µA Ω Note 1: All typical values are at Ta = 25 �. Note 2: Measured by the voltage drop between A and B pins at the indicated current through the switch. On-resistance is determined by the lower of the voltages on the two (A or B) pins. 11.2. AC Characteristics (Unless otherwise specified, T a = -40 to 85 �) Characteristics 3-state output enable time 3-state output disable time Symbol Note tPZL/tPZH tPLZ/tPHZ Test Condition VCC (V) Min Max Unit See Fig. 11.2.1, 11.2.2, Table 11.2.1 5.0 ± 0.5 � 4 ns 3.3 ± 0.3 � 6 See Fig. 11.2.1, 11.2.2, Table 11.2.1 2.5 ± 0.2 � 8 1.8 ± 0.15 � 16 5.0 ± 0.5 � 4.5 3.3 ± 0.3 � 7 2.5 ± 0.2 � 9 1.8 ± 0.15 � 16 11.3. Capacitive Characteristics (Note) (Unless otherwise specified, T a = 25 �) Characteristics Symbol Note Test Condition VCC (V) Typ. Unit 4 pF Input capacitance(S) CIN VIN = 0 V 5.0 Switch terminal OFF-capacitance CI/O B Port,VI/O = 0 V 5.0 5 Switch terminal ON-capacitance CI/O A Port,VI/O = 0 V 5.0 15 B Port,VI/O = 0 V 5.0 15 Note: Parameter guaranteed by design. ©2017-2021 Toshiba Electronic Devices & Storage Corporation 4 2021-09-07 Rev.3.0 TC7SB3157DL6X Fig. 11.2.1 AC Test Circuit Table 11.2.1 Parameter for AC Test Circuit Parameter Switch tPLZ, tPZL 2 × VCC tPHZ, tPZH GND Fig. 11.2.2 AC Waveform t PLZ , t PHZ , t PZL , t PZH ©2017-2021 Toshiba Electronic Devices & Storage Corporation 5 2021-09-07 Rev.3.0 TC7SB3157DL6X 12. Rise and Fall Time (t r /t f ) The tr(out) and tf(out) values of the output signals are affected by the CR time constant of the input, which consists of the switch terminal capacitance (CI/O) and the on-resistance (RON) of the input. In practice, the tr(out) and tf(out) values are also affected by the circuit's capacitance and resistance components other than the capacitance of TC7SB3157DL6X The tr/tf(out) values can be approximated as follows. (Figure 12.1, Table 12.1 shows the test circuit.) tr/tf(out) (approx) = - (CI/O + CL) � (RDRIVE + RON) � ln (((VOH - VOL) - VM) / (VOH - VOL)) Where, RDRIVE is the output impedance of the previous-stage circuit. Calculation example: tr(out) (approx) = - (15 + 15) E - 12 � (120 + 4) � ln (((4.5 - 0) - 2.25) / (4.5 - 0)) = ≈2.6 ns Calculation conditions: VCC = 4.5 V, CL = 15 pF, RDRIVE = 120 Ω (output impedance of the previous IC), VM = 2.25 V (VCC/2) Output of the previous IC = digital (i.e., high-level voltage = VCC, low-level voltage = GND) Fig. 12.1 Table 12.1 Calculation Circuit Calculation Circuit Characteristics VCC = 5.0 ± 0.5 V VCC = 3.3 ± 0.3 V VCC = 2.5 ± 0.2 V VCC = 1.8 ± 0.15 V VM VCC/2 VCC/2 VCC/2 VCC/2 ©2017-2021 Toshiba Electronic Devices & Storage Corporation 6 2021-09-07 Rev.3.0 TC7SB3157DL6X 13. Characteristics Curves (Note) Fig. 13.1 Note: R ON - V IS The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2017-2021 Toshiba Electronic Devices & Storage Corporation 7 2021-09-07 Rev.3.0 TC7SB3157DL6X Package Dimensions Unit: mm Weight: 0.002 g (typ.) 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