TC7SBL66CFU,TC7SBL384CFU
CMOS Digital Integrated Circuits
Silicon Monolithic
TC7SBL66CFU,TC7SBL384CFU
1. Functional Description
•
Low-Capacitance Single Bus Switch (analog)
2. General
The TC7SBL66CFU and TC7SBL384CFU are a Low Voltage / Low Capacitance CMOS single Bus Switch. The
low On-resistance of the switch allows connections to be made with minimal propagation delay time.
The TC7SBL66CFU requires the output enable (OE) input to be set low to place the output into the high impedance
state,whereas the TC7SBL384CFU requires the output enable (OE) input to be set high to place the output into
the high impedance.
All inputs are equipped with protection circuits against static discharge.
3. Features
(1)
Wide operating temperature range: Topr = -40 to 125 � (Note 1)
(2)
Operating voltage: VCC = 1.65 to 3.6 V
(3)
ON capacitance: CI/O = 7 pF Switch On (typ.) @VCC = 3.0 V
(4)
ON resistance: RON = 5.5 Ω (typ.) @VCC = 3 V, VIS = 0 V
(5)
Power-down protection for inputs (OE and OE, I/O)
(6)
Package: USV
Note 1: For devices with the ordering part number ending in (CT. Topr = -40 to 85 � for the other devices.
4. Packaging
USV
Start of commercial production
2020-12
©2020-2022
Toshiba Electronic Devices & Storage Corporation
1
2022-08-25
Rev.2.0
TC7SBL66CFU,TC7SBL384CFU
5. Pin Assignment
TC7SBL66CFU
TC7SBL384CFU
6. Block Diagram
TC7SBL66CFU
TC7SBL384CFU
7. Principle of Operation
7.1. Truth Table
Inputs OE
(TC7SBL66CFU)
Inputs OE
(TC7SBL384CFU)
Function
H
L
A port = B port
L
H
Disconnect
©2020-2022
Toshiba Electronic Devices & Storage Corporation
2
2022-08-25
Rev.2.0
TC7SBL66CFU,TC7SBL384CFU
8. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25 �)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
-0.5 to 4.6
V
Input voltage (OE, OE)
VIN
-0.5 to 4.6
V
-0.5 to 4.6
V
Switch I/O voltage
VCC = 0 V or Switch = Off
VS
Switch = On
-0.5 to VCC +0.5
Clamp diode current
IIK
-50
mA
Switch I/O current
IS
50
mA
Power dissipation
VCC/ground current
Storage temperature
Note:
PD
200
mW
ICC/IGND
±100
mA
Tstg
-65 to 150
�
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
9. Operating Ranges (Note)
Characteristics
Symbol
Supply voltage
Input voltage (OE, OE)
Switch I/O voltage
VCC = 0 V or Switch = Off
Note
Rating
Unit
VCC
1.65 to 3.6
V
VIN
0 to 3.6
V
VS
0 to 3.6
V
Switch = On
0 to VCC
Operating temperature
Topr
Input rise time
dt/dv
Input fall time
(Note 1)
-40 to 125
(Note 2)
-40 to 85
0 to 10
�
ns/V
0 to 10
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused control inputs must be tied to either VCC or GND.
Note 1: For devices with the ordering part number ending in (CT.
Note 2: For devices except those with the ordering part number ending in (CT.
©2020-2022
Toshiba Electronic Devices & Storage Corporation
3
2022-08-25
Rev.2.0
TC7SBL66CFU,TC7SBL384CFU
10. Electrical Characteristics
10.1. DC Characteristics (Unless otherwise specified, T a = -40 to 85 �)
Characteristics
Symbol
Note
Test Condition
VCC (V)
Min
Typ.
Max
Unit
High-level input voltage
(OE, OE)
VIH
�
1.65 to 3.6
0.7 × VCC
�
�
V
Low-level input voltage
(OE, OE)
VIL
�
1.65 to 3.6
�
�
0.3 × VCC
V
Input leakage current
(OE, OE)
IIN
1.65 to 3.6
�
�
±1.0
µA
Power-OFF leakage
current
IOFF
OE, OE, A, B = 0 to 3.6 V
0
�
�
10
µA
Switch OFF-state
leakage current
ISZ
A, B = 0 to VCC,
OE = GND(TC7SBL66CFU),
OE = VCC(TC7SBL384CFU)
1.65 to 3.6
�
�
±1.0
µA
(Note 1), VIS = 0 V,
(Note 2) IIS = 30 mA
3.0
�
5.5
10
Ω
VIS = 3.0 V,
IIS = 30 mA
3.0
�
10
16
VIS = 2.4 V,
IIS = 15 mA
3.0
�
12
18
VIS = 0 V,
IIS = 24 mA
2.3
�
6
10
VIS = 2.3 V,
IIS = 24 mA
2.3
�
13
20
VIS = 2.0 V,
IIS = 15 mA
2.3
�
15
21
VIS = 0 V,
IIS = 4 mA
1.65
�
7
13
VIS = 1.65 V,
IIS = 4 mA
1.65
�
18
27
VIN = VCC or GND,
IOUT = 0 A
3.6
�
�
10
ON-resistance
Quiescent supply
current
RON
VIN = 0 to 3.6 V
ICC
µA
Note 1: All typical values are at Ta = 25 �.
Note 2: Measured by the voltage drop between A and B pins at the indicated current through the switch. On-resistance
is determined by the lower of the voltages on the two (A or B) pins.
©2020-2022
Toshiba Electronic Devices & Storage Corporation
4
2022-08-25
Rev.2.0
TC7SBL66CFU,TC7SBL384CFU
10.2. DC Characteristics (Unless otherwise specified, T a = -40 to 125 �)
Characteristics
Symbol
Note
Test Condition
VCC (V)
Min
Max
Unit
High-level input voltage
(OE, OE)
VIH
�
1.65 to 3.6
0.7 × VCC
�
V
Low-level input voltage
(OE, OE)
VIL
�
1.65 to 3.6
�
0.3 × VCC
V
Input leakage current
(OE, OE)
IIN
1.65 to 3.6
�
±10.0
µA
Power-OFF leakage
current
IOFF
OE, OE, A, B = 0 to 3.6 V
0
�
40
µA
Switch OFF-state leakage
current
ISZ
A, B = 0 to VCC,
OE = GND(TC7SBL66CFU),
OE = VCC(TC7SBL384CFU)
1.65 to 3.6
�
±10.0
µA
(Note 1), VIS = 0 V,
(Note 2) IIS = 30 mA
3.0
�
13
Ω
VIS = 3.0 V,
IIS = 30 mA
3.0
�
19
VIS = 2.4 V,
IIS = 15 mA
3.0
�
21
VIS = 0 V,
IIS = 24 mA
2.3
�
13
VIS = 2.3 V,
IIS = 24 mA
2.3
�
23
VIS = 2.0 V,
IIS = 15 mA
2.3
�
24
VIS = 0 V,
IIS = 4 mA
1.65
�
16
VIS = 1.65 V,
IIS = 4 mA
1.65
�
30
VIN = VCC or GND,
IOUT = 0 A
3.6
�
40
ON-resistance
Quiescent supply current
RON
VIN = 0 to 3.6 V
ICC
µA
Note 1: All typical values are at Ta = 25 �.
Note 2: Measured by the voltage drop between A and B pins at the indicated current through the switch. On-resistance
is determined by the lower of the voltages on the two (A or B) pins.
10.3. AC Characteristics (Unless otherwise specified, T a = -40 to 85 �)
Characteristics
Output enable time
Output disable time
Symbol
Test Condition
tPZL,tPZH See Fig. 11.1, 11.2,
Table 11.1.1
tPLZ,tPHZ See Fig. 11.1, 11.2,
Table 11.1.1
VCC (V)
Min
Max
Unit
3.3 ± 0.3
�
6
ns
2.5 ± 0.2
�
7
1.8 ± 0.15
�
11
3.3 ± 0.3
�
6
2.5 ± 0.2
�
7
1.8 ± 0.15
�
11
ns
10.4. AC Characteristics (Unless otherwise specified, T a = -40 to 125 �)
Characteristics
Output enable time
Output disable time
Symbol
Test Condition
tPZL,tPZH See Fig. 11.1, 11.2,
Table 11.1.1
tPLZ,tPHZ See Fig. 11.1, 11.2,
Table 11.1.1
©2020-2022
Toshiba Electronic Devices & Storage Corporation
5
VCC (V)
Min
Max
Unit
3.3 ± 0.3
�
8
ns
2.5 ± 0.2
�
9
1.8 ± 0.15
�
13
3.3 ± 0.3
�
8
2.5 ± 0.2
�
9
1.8 ± 0.15
�
13
ns
2022-08-25
Rev.2.0
TC7SBL66CFU,TC7SBL384CFU
10.5. Capacitive Characteristics (Note) (Unless otherwise specified, T a = 25 �)
Characteristics
Symbol
Test Condition
VCC (V)
Typ.
Unit
Input capacitance (OE, OE)
CIN
VIN = 0 V
3.0
4
pF
Switch terminal OFF-capacitance
CI/O
OE = GND(TC7SBL66CFU),
OE = VCC(TC7SBL384CFU),
VIS = 0 V
3.0
3.5
pF
Switch terminal ON-capacitance
CI/O
OE = VCC(TC7SBL66CFU),
OE = GND(TC7SBL384CFU),
VIS = 0 V
3.0
7
pF
Note:
Parameter guaranteed by design.
11. AC Electrical Test Circuit
Fig. 11.1
Table 11.1.1
AC Test Circuit
Parameter for AC Test Circuit
Parameter
Switch
tPLZ, tPZL
2 × VCC
tPHZ, tPZH
GND
Fig. 11.2
©2020-2022
Toshiba Electronic Devices & Storage Corporation
AC Waveform t PLZ , t PHZ , t PZL , t PZH
6
2022-08-25
Rev.2.0
TC7SBL66CFU,TC7SBL384CFU
12. Rise and Fall Time (t r /t f )
The tr(out) and tf(out) values of the output signals are affected by the CR time constant of the input, which consists
of the switch terminal capacitance (CI/O) and the on-resistance (RON) of the input.
In practice, the tr(out) and tf(out) values are also affected by the circuit's capacitance and resistance components
other than the capacitance of TC7SBL66CFU, TC7SBL384CFU
The tr/tf(out) values can be approximated as follows.
(Figure 12.1, Table 12.1 shows the test circuit.)
tr/tf(out) (approx) = - (CI/O + CL) � (RDRIVE + RON) � ln (((VOH - VOL) - VM) / (VOH - VOL))
Where, RDRIVE is the output impedance of the previous-stage circuit.
Calculation example:
tr/tf(out) (approx) = - (7 + 15) E - 12 � (120 + 5.5) � ln (((3.0 - 0) - 1.5) / (3.0 - 0)) = ≈1.9 ns
Calculation conditions:
VCC = 3.0 V, CL = 15 pF, RDRIVE = 120 Ω (output impedance of the previous IC), VM = 1.5 V (VCC/2)
Output of the previous IC = digital (i.e., high-level voltage = VCC, low-level voltage = GND)
Fig. 12.1
Table 12.1
Calculation Circuit
Calculation Circuit
Characteristics
VCC = 3.3 ± 0.3 V
VCC = 2.5 ± 0.2 V
VCC = 1.8 ± 0.15 V
VM
VCC/2
VCC/2
VCC/2
©2020-2022
Toshiba Electronic Devices & Storage Corporation
7
2022-08-25
Rev.2.0
TC7SBL66CFU,TC7SBL384CFU
13. Characteristic (Note)
Fig. 13.1
Note:
R ON - V IS (Typ.) (T a = 25�)
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2020-2022
Toshiba Electronic Devices & Storage Corporation
8
2022-08-25
Rev.2.0
TC7SBL66CFU,TC7SBL384CFU
Package Dimensions
Unit: mm
Weight: 0.006 g (typ.)
Package Name(s)
Nickname: USV
©2020-2022
Toshiba Electronic Devices & Storage Corporation
9
2022-08-25
Rev.2.0
TC7SBL66CFU,TC7SBL384CFU
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