TC7USB40MU,LF

TC7USB40MU CMOS Digital Integrated Circuits Silicon Monolithic TC7USB40MU 1. Functional Description • Dual SPDT USB Switch 2. General The TC7USB40MU is high-speed CMOS dual 1-2 multiplexer/demultiplexer. The low ON-resistance and the low capacitance of the switch allow connections to USB2.0 (480Mbps) application. This device consists of dual individual two-inputs multiplexer/demultiplexer with common select input (S) and output enable (OE). The D+/D- inputs is connected to the 1D+/1D- or 2D+/2D- outputs determined by the combination both the select input (S) and output enable (OE). When the output enable (OE) input is held high level, the switches are open with regardless the state of select inputs and a high-impedance state exists between the switches. All inputs are equipped with protection circuits against static discharge. 3. Features (1) Supply voltage: VCC = 2.3 to 4.3 V (2) Switch terminal ON-capacitance: CI/O = 5 pF Switch ON (typ.) @VCC = 3.3 V (3) ON-resistance: RON = 4.5 Ω (typ.) @VCC = 3 V, VIS = 0 V (4) RON flatness: RON(flat) = 1.3 Ω (typ.)@VCC = 3 V (5) Difference of ON-resistance between switches: ∆RON = 0.35 Ω (typ.)@VCC = 3 V (6) Power-down protection provided on all inputs and outputs. (7) Ultra-small Package: UQFN10B, UQFN10 Start of commercial production ©2020 Toshiba Electronic Devices & Storage Corporation 1 2020-06 2020-06-16 Rev.3.0 TC7USB40MU 4. Packaging and Pin Assignment (Note) UQFN10B UQFN10 Note: The shapes and dimensions of the package vary, depending on the manufacturing plant. For details, contact the Toshiba sales representative. 5. Marking Fig. 5.1 UQFN10B (Top view) ©2020 Toshiba Electronic Devices & Storage Corporation Fig. 5.2 UQFN10 (Top view) 2 2020-06-16 Rev.3.0 TC7USB40MU 6. Block Diagram Fig. 6.1 Block Diagram 7. Principle of Operation 7.1. Truth Table X: Input OE Input S Function L L D+ port = 1D+ port, D- Port = 1D- Port L H D+ port = 2D+ port, D- Port = 2D- Port H X Disconnect Don't care ©2020 Toshiba Electronic Devices & Storage Corporation 3 2020-06-16 Rev.3.0 TC7USB40MU 8. Absolute Maximum Ratings (Note) Characteristics Symbol Supply voltage VCC Input voltage (OE, S) VIN Switch I/O voltage VS Note Test Condition  VCC = 0 V or Switch OFF IIK Switch I/O current IS Power dissipation PD VCC/ground current Storage temperature Note: Unit -0.5 to 4.6 V -0.5 to 4.6 Switch ON Clamp diode current Rating -0.5 to 4.6 -0.5 to VCC +0.5 Control input -50 Switch ±50  mA 50 200 mW ICC/IGND ±100 mA Tstg -65 to 150  Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 9. Operating Ranges (Note) Characteristics Symbol Supply voltage VCC Input voltage (OE, S) VIN Switch I/O voltage VS Operating temperature Topr Input rise time dt/dv Note Test Condition  Unit 2.3 to 4.3 V 0 to 4.3 Input fall time Note: Rating VCC = 0 V or Switch OFF 0 to 4.3 Switch ON 0 to VCC  -40 to 85  0 to 10 ns/V 0 to 10 The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs and bus inputs must be tied to either VCC or GND. ©2020 Toshiba Electronic Devices & Storage Corporation 4 2020-06-16 Rev.3.0 TC7USB40MU 10. Electrical Characteristics ) 10.1. DC Characteristics (Note) (Unless otherwise specified, Ta = -40 to 85 85 Characteristics Symbol High-level input voltage (OE, S) VIH Low-level input voltage (OE, S) Input leakage current (OE, S) Note Test Condition  Unit 2.3 to 3.0 0.50 × VCC   V 3.0 to 4.3 0.46 × VCC.     0.25 × VCC IIN VIN = 0 to 4.3 V 2.3 to 4.3   ±1 0   ±2 2.3 to 4.3   ±2 3.0  4.5 6 VIS = 0.4 V, IIS = 30 mA, See Fig. 11.9 3.0  4.8 6.7 VIS = 3.0 V, IIS = 30 mA, See Fig. 11.9 3.0  10 14 Switch OFF-state leakage current ISZ VIS = 0 to VCC, OE = VCC, See Fig. 11.11 Quiescent supply current Max 2.3 to 4.3 VIN = VIS = 0 to 4.3 V, See Fig. 11.10 ON-resistance flatness Typ.  IOFF Difference of ON-resistance between switches Min VIL Power-OFF leakage current ON-resistance VCC (V) RON (Note 1) VIS = 0 V, IIS = 30 mA, See Fig. 11.9 ∆RON (Note 1) VIS = 0.4 V, 1.0 V, IIS = 30 mA 3.0  0.35  RON(flat) (Note 1) VIS = 0 V to 1.0 V, IIS = 30 mA 3.0  1.3  VIN = VCC or GND, IOUT = 0 A 4.3   1 VIN = 2.6 V (one input) 4.3   40 ICC ∆ICC µA Ω µA Note: All typical values are at Ta = 25. Note 1: Measured by the voltage drop between D+/D- and 1D+/1D-,2D+/2D- pins at the indicated current through the switch. On-resistance is determined by the lower of the voltages on the two pins. ) 85 10.2. AC Characteristics (Note) (Unless otherwise specified, Ta = -40 to 85 Characteristics Propagation delay time Symbol Note Test Condition tPLH/tPHL (Note 1) CL = 5 pF, See Fig. 11.1 Turn-ON time (S, OE to output) ton Turn-OFF time (S, OE to output) toff RL = 50 Ω, CL = 5 pF, See Fig. 11.2 RL = 50 Ω, CL = 5 pF, See Fig. 11.3 VCC (V) Min Typ. Max Unit 3.3 ± 0.3   0.25  ns 10 20  14 24 2  7 Break before make TBBM Skew of opposite transitions of the same output (tPHL - tPLH) tSK(P) (Note 1) CL = 5 pF, See Fig. 11.4  0.1  Output skew (center port to any other port) tSK(O) (Note 1) CL = 5 pF, See Fig. 11.5  0.1  Note: All typical values are at Ta = 25. Note 1: Parameter guaranteed by design. ©2020 Toshiba Electronic Devices & Storage Corporation 5 2020-06-16 Rev.3.0 TC7USB40MU ) 10.3. Analog Switch (Note) (Unless otherwise specified, Ta = -40 to 85 85 Characteristics Symbol Note Test Condition VCC (V) Min Typ. Max Unit 3.3 ± 0.3  -24  dB OFF isolation (non-adjacent) OIRR RT = 50 Ω, f = 240 MHz, See Fig. 11.6 Crosstalk (non-adjacent) Xtalk RT = 50 Ω, f = 240 MHz, See Fig. 11.7  -30  RL = 50 Ω, CL = 0 pF, See Fig. 11.8  1500  MHz VCC (V) Typ. Unit 3.3 3 pF -3dB Bandwidth Note: BW All typical values are at Ta = 25. Parameter guaranteed by design. ) 10.4. Capacitive Characteristics (Note) (Unless otherwise specified, Ta = 25 25 Characteristics Symbol Note Test Condition Input capacitance (OE, S) CIN VIN = 0 V Switch terminal OFF-capacitance (D+, D-) CI/O OE = VCC, VIS = 0 V Switch terminal OFF-capacitance (1D+, 1D-, 2D+, 2D-) 2 Switch terminal ON-capacitance Note: 3 OE = GND, VIS = 0 V 5 Parameter guaranteed by design. ©2020 Toshiba Electronic Devices & Storage Corporation 6 2020-06-16 Rev.3.0 TC7USB40MU 11. AC Test Circuits and Waveforms Fig. 11.1 Propagation Delay Time (tPLH, tPHL) ©2020 Toshiba Electronic Devices & Storage Corporation 7 2020-06-16 Rev.3.0 TC7USB40MU Fig. 11.2 Turn-ON and Turn-OFF Times (ton, toff) Fig. 11.3 Break Before Make (TBBM) ©2020 Toshiba Electronic Devices & Storage Corporation 8 2020-06-16 Rev.3.0 TC7USB40MU Fig. 11.4 Skew of opposite transitions of the same output (tSK(P) = |tPHL - tPLH|) Fig. 11.5 Output Skew (center port to any other port) ©2020 Toshiba Electronic Devices & Storage Corporation 9 2020-06-16 Rev.3.0 TC7USB40MU Fig. 11.6 OFF Isolation Fig. 11.7 Crosstalk Fig. 11.8 -3dB Bandwidth ©2020 Toshiba Electronic Devices & Storage Corporation 10 2020-06-16 Rev.3.0 TC7USB40MU Fig. 11.9 ON-Resistance Fig. 11.10 Power-OFF Leakage Current ©2020 Toshiba Electronic Devices & Storage Corporation Fig. 11.11 Switch OFF-state leakage current 11 2020-06-16 Rev.3.0 TC7USB40MU Package Dimensions Unit: mm This resins used in this product include no flame retardants. The shapes and dimensions of the package vary, depending on the manufacturing plant. For details, contact the Toshiba sales representative. Weight: 4.0 mg (typ.) Package Name(s) Nickname: UQFN10B ©2020 Toshiba Electronic Devices & Storage Corporation 12 2020-06-16 Rev.3.0 TC7USB40MU Package Dimensions Unit: mm This resins used in this product include no flame retardants. The shapes and dimensions of the package vary, depending on the manufacturing plant. For details, contact the Toshiba sales representative. Weight: 3.5 mg (typ.) Package Name(s) Nickname: UQFN10 ©2020 Toshiba Electronic Devices & Storage Corporation 13 2020-06-16 Rev.3.0 TC7USB40MU RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". 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