TCK111G,TCK112G
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCK111G, TCK112G
3A, 8 mΩ Ultra Low On resistance Load Switch IC
with Reverse Current Blocking and Thermal Shutdown function
The TCK111G and TCK112G are Load Switch ICs for power
management with Reverse Current Blocking and Thermal Shutdown
function featuring ultra low switch on resistance, high output current
and wide input voltage operation from 1.1 to 5.5 V. Switch ON
resistance is only 8.3 mΩ (typ.) at VIN = 5.0 V, -1.5 A load conditions
and output current is available on 3.0 A. And these feature a slew
rate control driver and output auto-discharge function.
This device is available in 0.5 mm pitch ultra small package
WCSP6C (1.0 mm x 1.5 mm, t: 0.5 mm (typ.)).Thus this devices is
ideal for portable applications that require high-density board
assembly such as cellular phone.
WCSP6C
Weight: 1.4 mg (typ.)
Feature
•
Low ON resistance:
RON = 8.3 mΩ (typ.) at VIN = 5.0 V, -1.5 A
RON = 8.4 mΩ (typ.) at VIN = 3.3 V, -1.5 A
RON = 8.4 mΩ (typ.) at VIN = 1.8 V, -1.5 A
RON = 8.5 mΩ (typ.) at VIN = 1.1 V, -1.5 A
•
Wide input voltage operation: VIN = 1.1 to 5.5 V
•
Reverse current blocking
•
Inrush current reducing circuit
•
Thermal Shutdown function
•
Output auto-discharge ( TCK112G )
•
Pull down connection between CONTROL and GND
•
Ultra small package : WCSP6C (1.0mm x 1.5mm, t: 0.5 mm(typ.))
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TCK111G,TCK112G
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Input voltage
VIN
-0.3 to 6.0
V
Control voltage
VCT
-0.3 to 6.0
V
Output voltage
VOUT
-0.3 to 6.0
V
Output current
IOUT
DC
Pulse
3.0
A
4.0 (Note 1)
A
Power dissipation
PD
1.2 (Note 2)
W
Operating temperature range
Topr
−40 to 85
°C
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note1: 100 μs pulse, 2% duty cycle
Note2: Rating at mounting on a board
(Board material: Glass epoxy (FR4)
Board dimension: 25.4mm x 25.4mm (both sides of board)，t=1.6mm, Cu pad area: 645mm2)
Pin Assignment(Top view)
1
A
B
C
Top marking
2
Index
A1: VOUT
B1: VOUT
C1: GND
A2: VIN
B2: VIN
C2: CONTROL
Lot trace code
V: TCK111G
W: TCK112G
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TCK111G,TCK112G
Block Diagram
Reverse Current
Blocking
VOUT
VIN
Q1
Charge
Pump
Thermal
Shut down
Control
Logic
CONTROL
Slew Rate
Control Driver
Q2
Output Discharge
(TCK112G only)
Pull
Down
GND
Function table
Function
Part number
Reverse current blocking
Thermal shutdown
Output auto-discharge
Control pin connection
TCK111G
Built in
Built in
N/A
Pull down
TCK112G
Built in
Built in
Built in
Pull down
Operation Logic table
1.1 V ≤ VIN ≤ 5.5 V (Ta = -40 to 85°C)
Control
“High”
Control
“Low”
Control
“OPEN”
TCK111G
TCK112G
Output Q1
Discharge Q2
Reverse current block
ON
―
Active
ON
OFF
Active
Output Q1
Discharge Q2
OFF
―
OFF
ON
Reverse current block
Active
Active
Output Q1
OFF
OFF
Discharge Q2
―
ON
Reverse current block
Active
Active
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Electrical Characteristics
DC Characteristics (Ta = -40 to 85°C)
Ta = −40 to 85°C
Ta = 25°C
Characteristics
Symbol
Input voltage
VIN
CONTROL High-level input voltage
VIH
CONTROL Low-level input voltage
VIL
Quiescent current ( ON state)
IQ
Standby current ( OFF state)
Test Condition
Typ.
Max
Min
Max
―
1.1
―
5.5
1.1
5.5
1.2V < VIN ≤ 5.5 V
1.0
―
―
1.0
―
1.1V ≤VIN ≤1.2 V
0.9
―
―
0.9
―
VIN = 1.1 to 5.5 V
―
―
0.4
―
0.4
V
VIN = VCT = 1.1 V
―
55
―
―
―
μA
VIN = VCT = 1.8 V
―
50
―
―
―
μA
VIN = VCT = 3.3 V
―
48
―
―
―
μA
VIN = VCT = 5.0 V
―
69
―
―
106
μA
VIN = 5.5 V,
VCT = 0 V,
(Note 3)
VOUT = OPEN
―
0.5
―
―
1.4
μA
―
0.6
―
―
10
μA
IOUT = 0 mA
IQ(OFF)
Unit
Min
V
V
Reverse blocking current
IRB
VOUT = 5.0 V,
= 0 V, VCT = 0 V
Reverse blocking voltage threshold
VRB
VOUT – VIN
―
40
―
―
―
mV
VRBR
VOUT – VIN
―
-30
―
―
―
mV
VIN = 5.0 V
―
8.3
―
―
15
VIN = 3.3 V
―
8.4
―
―
―
VIN = 1.8 V
―
8.4
―
―
―
VIN = 1.1 V
―
8.5
―
―
15
―
380
―
―
―
Ω
Reverse blocking release voltage
threshold
On resistance
RON
IOUT = -1.5 A
Output discharge on resistance
RSD
―
VIN
(TCK112G)
mΩ
Note 3 ： Except OFF-state switch current ( ISD(OFF) : VIN = 5.5 V, VCT = 0 V, VOUT = GND ).
AC Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition(Figure 1)
Min
Typ.
Max
Unit
0.5
―
ms
tr
VIN= 5.0 V , RL = 2.5 Ω , CL=1.0 μF
―
VOUT fall time
tf
VIN= 5.0 V , RL = 2.5 Ω , CL=1.0 μF
―
5
―
μs
Turn on delay
tON
VIN= 5.0 V , RL = 2.5 Ω , CL=1.0 μF
―
0.2
―
ms
Turn off delay
tOFF
VIN= 5.0 V , RL = 2.5 Ω , CL=1.0 μF
―
4
―
μs
VOUT rise time
AC Waveform
tr
VOUT
tf
90%
10%
VIH
VCT
50%
50%
VIL
90%
10%
90%
VOUT
10%
tON
Figure 1
tOFF
VOH
VOL
tr, tf, tON, tOFF Waveforms
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TCK111G,TCK112G
Application Note
1.
Application circuit example (top view)
The figure below shows the recommended configuration for TCK111G and TCK112G.
CONTROL
GND
VIN
VOUT
COUT
1.0 μF
CIN
1.0 μF
LOAD
CL
RL
1) Input and Output capacitor
An input capacitor (CIN) and an output capacitor (COUT) are necessary for the stable operation of TCK111G and
TCK112G. And it is effective to reduce voltage overshoot or undershoot due to sharp changes in output current and
also for improved stability of the power supply. When used, place CIN and COUT more than 1.0μF as close to VIN
pin to improve stability of the power supply.
2) Control pin
A control pins for TCK111G and TCK112G are both Active High, which controls both the pass-through n-ch
MOSFET and the discharge n-ch MOSFET (only for TCK112G), operated by the control voltage and Schmitt trigger.
When the control voltage level is High, Output n-ch MOSFET is ON state and discharge n-ch MOSFET is OFF
state. When control voltage level is Low, and the state of the MOSFETs is reversed. Also, pull down resistance
equivalent to a few MΩ is connected between CONTROL and GND, thus the load switch IC is in OFF state even
when CONTROL pin is OPEN. In addition, CONTROL pin has a tolerant function such that it can be used even if
the control voltage is higher than the input voltage.
2. Reverse current blocking
Reverse current blocking function is designed in these products. This function is active regardless output n-ch
MOSFET ON/OFF state in condition that VIN is supplied
However these does not assure for the suppression of uprising device operation. In use of these products, please
read through and understand dissipation idea for absolute maximum ratings from the above mention or our
‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition.
Furthermore, Toshiba recommend inserting failsafe system into the design.
3. Thermal shut down function
Thermal shutdown function is designed in these products, but these does not assure for the suppression of uprising
device operation. In use of these products, please read through and understand dissipation idea for absolute
maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products
under absolute maximum ratings in any condition. Furthermore, Toshiba recommend inserting failsafe system into the
design.
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TCK111G,TCK112G
4. Power Dissipation
Board-mounted power dissipation ratings for TCK111G and TCK112G are available in the Absolute Maximum
Ratings table.
Power dissipation is measured on the board condition shown below.
[The Board Condition]
Board material: Glass epoxy (FR4)
Board dimension: 25.4mm x 25.4mm (both sides of board)，t=1.6mm, Cu pad area: 645mm2
PD – Ta (WCSP6C)
Power dissipation PD
(mW)
1600
1200
800
400
0
−40
0
40
80
Ambient temperature Ta
120
(°C)
Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into
consideration the ambient temperature, input voltage, output current etc. and applying the appropriate derating for
allowable power dissipation during operation.
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Representative Typical Characteristics
RON - VIN
12
RON - IOUT
IOUT = -1.5A
ON resistance RON (mΩ)
ON resistance RON (mΩ)
1) ON resistance
Ta = 25°C
11
10
9
8
7
0
1.0
2.0
Input voltage VIN (V)
VIN = 1.1 V
Ta = 25°C
11
10
9
8
7
0
5.0 5.5
4.0
3.0
12
0.5
1.0
1.5
2.0
Output current IOUT
2.5
3.0
(A)
2) Quiescent current
IQ(ON) - VIN
Quiescent current(ON) IQ (μA)
180
IOUT = 0 mA
Ta = 25°C
150
120
90
60
30
0
0
1
2
3
4
5
6
Input voltage VIN (V)
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Package dimension
Unit: mm
WCSP6C
Weight: 1.4 mg (typ.)
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RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively "Product") without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,
or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for
the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product
design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or
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