TCK22892G,LF

TCK22xxxG/TCK2065G/TCK1024G TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK22xxxG, TCK2065G, TCK1024G Load Switch IC with Over current limited function The TCK22xxxG, TCK2065G and TCK1024G are Load Switch ICs for power management with Over Current Limited function featuring low switch on resistance, ultra low quiescent current, high output current and wide input voltage range. Typical switch ON resistance is only 31 mΩ at VIN = 5.0 V, IOUT = -0.15 A load conditions. And these feature a thermal shut down function and output auto-discharge function. These devices are available in 0.4 mm pitch ultra small package WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm). So these devices are ideal for portable applications that require high-density board assembly such as cellular phone. Feature WCSP6E Weight: 1 mg (typ.)  Over current limit function ICL = 400/740/1110/1540 mA (Option)  Thermal shutdown function  Inrush current reduction  Output auto-discharge function  True reverse current blocking function(Option)  Under voltage lockout function(Option)  Low ON resistance : RON = 31 mΩ (typ.) at VIN = 5.0 V, IOUT = -0.15 A RON = 40 mΩ (typ.) at VIN = 3.3 V, IOUT = -0.15 A RON = 70 mΩ (typ.) at VIN = 1.8 V, IOUT = -0.15 A  Low quiescent current: IQ = 25 μA (typ.) at VIN = 5.5 V, IOUT = 0 mA  Pull down connection between CONTROL and GND  Ultra small package : WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm) Start of commercial production 2016-02 © 2018 - 2022 Toshiba Electronic Devices & Storage Corporation 1 2022-06-09 TCK22xxxG/TCK2065G/TCK1024G Function Table Function Part number Device Marking Output current limit True Reverse current blocking Output autodischarge Under voltage lock out Thermal shut down Control pin polarity TCK22946G 400 mA Built in Built in Built in Built in Active High 1T TCK22951G 740 mA Built in Built in Built in Built in Active High 2T TCK2065G 1110 mA Built in Built in Built in Built in Active High 3T TCK1024G 1540 mA Built in Built in Built in Built in Active High 4T TCK22891G 400 mA N/A Built in N/A Built in Active High 5T TCK22892G 740 mA N/A Built in N/A Built in Active High 6T TCK22893G 1110 mA N/A Built in N/A Built in Active High 7T TCK22894G 1540 mA N/A Built in N/A Built in Active High 8T © 2018 - 2022 Toshiba Electronic Devices & Storage Corporation 2 2022-06-09 TCK22xxxG/TCK2065G/TCK1024G Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to 6.0 V Output current IOUT Internally limited - Power dissipation PD 800 Operating temperature range Topr −40 to 85 °C Tj 150 °C Tstg −55 to 150 °C Junction temeperature Storage temperature (Note 1) mW Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Board material: Glass epoxy (FR4) Board dimension: 40mm x 40mm (both sides of board), t=1.6mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 28 Operating conditions Characteristics Symbol Input voltage VIN Output voltage Condition TCK22946G TCK22891G ― Others ― VIH CONTROL Low-level input voltage 2 1 B 1.1 5.5 1.4 5.5 ― VIN 1.2V < VIN ≤ 5.5 V 1.0 ― 1.1V ≤VIN ≤1.2 V 0.9 ― ― 0.4 ― ― VIL Pin Assignment(Top view) A Max Unit V VOUT CONTROL High-level input voltage Min V V V Top marking Lot trace code C A1: VOUT B1: VOUT C1: GND A2: VIN B2: VIN C2: CONTROL Device Marking Index © 2018 - 2022 Toshiba Electronic Devices & Storage Corporation 3 2022-06-09 TCK22xxxG/TCK2065G/TCK1024G Block Diagram TCK22946G, TCK22951G, TCK2065G, TCK1024G True Reverse Current Blocking V IN Current Sense Q1 Thermal Shutdown UVLO VOUT Overcurrent Protection Slew Rate Control Driver CONTROL Control Logic Q2 Output Discharge Pull Down GND TCK22891G, TCK22892G, TCK22893G, TCK22894G Current Sense V IN Q1 Thermal Shutdown VOUT Overcurrent Protection Slew Rate Control Driver CONTROL Control Logic Q2 Output Discharge Pull Down GND Operation logic table TCK22946G, TCK22951G TCK2065G, TCK1024G Control “High” Control “Low” TCK22891G, TCK22892G TCK22893G, TCK22894G Output Q1 ON ON Discharge Q2 Reverse current blocking OFF Active OFF ― Output Q1 OFF OFF Discharge Q2 Reverse current blocking ON Active ON ― © 2018 - 2022 Toshiba Electronic Devices & Storage Corporation 4 2022-06-09 TCK22xxxG/TCK2065G/TCK1024G Electrical Characteristics DC Characteristics (Ta = -40 to 85°C) Ta = −40 to 85°C Ta = 25°C Characteristics Quiescent current ( ON state) Quiescent current ( OFF state) Symbol IQ IQ(OFF) Reverse blocking current IRB Reverse blocking voltage threshold VRB Test Condition IOUT = 0 mA Unit Min Typ. Max Min Max VIN = 1.1 V ― 16 ― ― ― μA VIN = 5.5 V ― 25 ― ― 50 μA ― 0.6 ― ― 2.5 μA ― 0.01 ― ― 2 μA ― 35 ― ― ― mV ― -15 ― ― ― mV VIN = 5.5 V, VOUT = OPEN, VOUT = 5.0 V, VIN = 0 V, RCB active (Note 2) VOUT – VIN (Note 2) VOUT – VIN Reverse blocking release voltage threshold VRBR Under Voltage Lock Out (UVLO) rising threshold VUVL_RI ― (Note 2) ― 0.82 ― ― 1.1 V Under Voltage Lock Out (UVLO) falling threshold VUVL_FA ― (Note 2) ― 0.77 ― ― ― V VIN = 5.0 V ― 31 ― ― 85 VIN = 3.3 V ― 40 ― ― 95 VIN = 1.8 V ― 70 ― ― 140 VIN = 1.2 V (Note 3) ― 141 ― ― ― VIN = 1.1 V (Note 3) ― 179 ― ― ― TCK22946G TCK22891G ― 400 ― ― ― TCK22951G TCK22892G ― 740 ― ― ― On resistance Output Limited Current Output discharge on resistance RON ICL RSD (Note 2) IOUT = -0.15 A VIN = 5.5 V mΩ mA TCK2065G TCK22893G ― 1110 ― ― ― TCK1024G TCK22894G ― 1540 ― ― ― ― 100 ― ― ― ―  Ω Note 2: Only applies to the TCK22946G, TCK22951G, TCK2065G and TCK1024G Note 3: Only applies to the TCK22946G and TCK22891G © 2018 - 2022 Toshiba Electronic Devices & Storage Corporation 5 2022-06-09 TCK22xxxG/TCK2065G/TCK1024G AC Characteristics (Ta = 25°C) VIN = 5.0 V Characteristics Symbol Test Condition(Figure 1) Min Typ. Max Unit VOUT rise time tr VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 50 ― μs VOUT fall time tf VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 50 ― μs Turn on delay tON VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 40 ― μs Turn off delay tOFF VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 10 ― μs AC Waveform VIH VCT tr VOUT 50% tf 90% 10% 50% VIL 90% 10% 90% VOUT 10% tON Figure 1 © 2018 - 2022 Toshiba Electronic Devices & Storage Corporation tOFF VOH VOL tr, tf, tON, tOFF Waveforms 6 2022-06-09 TCK22xxxG/TCK2065G/TCK1024G Application Note Application circuit example (top view) 1. The figure below shows the example of configuration. CONTROL GND VOUT LOAD VIN CIN COUT CL RL Control Voltage Output Voltage HIGH ON LOW OFF OPEN OFF 1) Input and Output capacitor An input capacitor (CIN) and an output capacitor (COUT) are necessary for the stable operation. And they are effective to reduce voltage overshoot or undershoot due to sharp changes in output current and also for improved stability of the power supply. When used, place CIN and COUT more than 1.0μF as close to VIN pin and VOUT pin to improve stability of the power supply. 2) Control pin The CONTROL pin controls state of the switch, operated by the control voltage. Control pin is equipped with Schmitt trigger. Also, pull down resistance equivalent to a few MΩ is connected between CONTROL and GND, thus the load switch IC is in OFF state even when CONTROL pin is OPEN. 2. Over current limit function This device has a built-in fold-back type of current-limiting circuit. Around 15% or more derating against typical values is recommended for system design with enough margin. 3. Thermal shutdown function Each device has a built-in thermal shutdown circuit. If the junction temperature goes beyond 170°C (Typ.), thermal shutdown circuit operates and turns off power switch. When the junction temperature decreases lower than 150°C, the power switch is turned on due to hysteresis. This operation is repeated as long as the junction temperature continues increasing. 4. True reverse current blocking function(Option) Some of these devices have built-in true reverse current blocking circuit (TRCB) to block reverse current from VOUT to VIN regardless of output MOSFET ON/OFF condition. (Full-Time Reverse Current Protection) 5. Under-voltage Lockout function(Option) Some of these devices have a built-in under-voltage lockout circuit to turn off switch if VIN drops below UVLO. This circuit has hysteresis and UVLO is released when VIN exceeds threshold. 6. Instructions and directions for use Each device has several built-in protection functions, but these do not assure for the suppression of uprising device operation. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design. © 2018 - 2022 Toshiba Electronic Devices & Storage Corporation 7 2022-06-09 TCK22xxxG/TCK2065G/TCK1024G 7. Power Dissipation Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40mm x 40mm (both sides of board), t=1.6mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 28 PD - Ta Power Dissipation PD (mW) 1000 800 600 400 200 0 -40 0 40 80 Ambient Temperature Ta (℃) 120 Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into consideration the ambient temperature, input voltage, output current etc. and applying the appropriate derating for allowable power dissipation during operation. © 2018 - 2022 Toshiba Electronic Devices & Storage Corporation 8 2022-06-09 TCK22xxxG/TCK2065G/TCK1024G TCK22xxxG/TCK2065G/TCK1024G Representative Typical Characteristics RON - VIN IQ - VIN tON - Ta tOFF - Ta t r - Ta t f - Ta © 2018 - 2022 Toshiba Electronic Devices & Storage Corporation 9 2022-06-09 TCK22xxxG/TCK2065G/TCK1024G tON Response tOFF Response VUVL - Ta Reverse blocking voltage threshold VOUT-IOUT Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2018 - 2022 Toshiba Electronic Devices & Storage Corporation 10 2022-06-09 TCK22xxxG/TCK2065G/TCK1024G Package dimension Unit: mm Weight: 1 mg (typ.) © 2018 - 2022 Toshiba Electronic Devices & Storage Corporation 11 2022-06-09 TCK22xxxG/TCK2065G/TCK1024G Land pattern dimensions (for reference only) Unit： mm © 2018 - 2022 Toshiba Electronic Devices & Storage Corporation 12 2022-06-09 TCK22xxxG/TCK2065G/TCK1024G RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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