TCK22923G,LF

TCK2292xG, TCK2297xG TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK2292xG, TCK2297xG 2A, 25mΩ Load Switch IC with Slew Rate Control Driver The TCK2292xG and TCK2297xG are load switch ICs for power management with slew rate control driver featuring wide input voltage operation from 1.1 to 5.5 V. Switch ON resistance is only 25 mΩ typical at 5.0 V, -0.5 A load condition and these feature a slew rate control driver. TCK2292xG has output auto-discharge function. Output current type is available on 2 A. These devices are available in 0.4 mm pitch ultra small package WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm) .Thus they are ideal for portable applications that require high-density board assembly such as cellular phone. Feature  Wide input voltage operation: VIN = 1.1 to 5.5 V WCSP6E  Low ON resistance: Weight: 1 mg (typ.) RON = 25 mΩ (typ.) at VIN = 5.0 V, IOUT = -0.5 A RON = 31 mΩ (typ.) at VIN = 3.3 V, IOUT = -0.5 A RON = 52 mΩ (typ.) at VIN = 1.8 V, IOUT = -0.5 A RON = 104 mΩ (typ.) at VIN = 1.2 V, IOUT = -0.5 A  Low Quiescent Current: IQ = 0.1 μA (typ.) at IOUT = 0 mA(TCK22921G, TCK22971G)  Slew Rate Control circuit  Output auto-discharge (Option)  Reverse current blocking (VIN = 0 V)  Pull down connection between Control and GND(Option)  Ultra small package: WCSP6E (0.8mm x 1.2mm, t: 0.55mm) Start of commercial production 2016-06 © 2017-2021 Toshiba Electronic Devices & Storage Corporation 1 2021-11-18 TCK2292xG, TCK2297xG Function Table Function Part number Device Marking Rise time @VIN=5V Reverse current blocking (VIN = 0 V) Output autodischarge Control pin polarity Control pin connection TCK22921G 4.5 μs Built in Built in Active High Pull down 1R TCK22922G 666 μs Built in Built in Active High Pull down 2R TCK22923G 1364 μs Built in Built in Active High Pull down 3R TCK22925G 3380 μs Built in Built in Active High Pull down 4R TCK22971G 4.5 μs Built in N/A Active High Pull down 5R TCK22972G 666 μs Built in N/A Active High Pull down 6R TCK22973G 1364 μs Built in N/A Active High Pull down 7R TCK22974G 3380 μs Built in N/A Active High Pull down 8R TCK22975G 666 μs Built in N/A Active Low Open 9R © 2017-2021 Toshiba Electronic Devices & Storage Corporation 2 2021-11-18 TCK2292xG, TCK2297xG Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to 6.0 V 2.0 A Output current IOUT 3.0 (Note1) A DC Pulse Power dissipation PD Operating temperature range Topr -40 to 85 °C Tj 150 °C Tstg -55 to 150 °C Junction temeperature Storage temperature 800 (Note 2) mW Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: 100 μs pulse, 2% duty cycle Note2: Rating at mounting on a board Board material: Glass epoxy (FR4) Board dimension: 40mm x 40mm (both sides of board), t=1.6mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 28 Operating conditions Characteristics Symbol Condition Min Max Unit VIN ― 1.1 5.5 V Output voltage VOUT ― ― VIN V Output current IOUT A Input voltage Control High-level input voltage VIH Control Low-level input voltage VIL 1.4V < VIN ― 2.0 1.2V < VIN ≤ 5.5 V 1.0 ― 1.1V ≤ VIN ≤1.2 V 0.9 ― ― ― 0.4 Pin Assignment(Top view) A 2 1 B V V Top marking Lot trace code C A1: VOUT B1: VOUT C1: GND A2: VIN B2: VIN C2: Control Device Marking Index © 2017-2021 Toshiba Electronic Devices & Storage Corporation 3 2021-11-18 TCK2292xG, TCK2297xG Block Diagram Reverse Current Blocking VIN VOUT Q1 VIN VOUT Slew Rate Control Driver Control Logic Control Q2 * Output Discharge Pull Down GND *:option Operation logic table (VIN = 1.1 V to 5.5 V) TCK22921G TCK22922G TCK22923G TCK22925G TCK22971G TCK22972G TCK22973G TCK22974G TCK22975G Control “High” Output Q1 ON ON OFF Discharge Q2 OFF ― ― Control “Low” Output Q1 OFF OFF ON Discharge Q2 ON ― ― *Reverse current blocking function works when VIN = 0 V. © 2017-2021 Toshiba Electronic Devices & Storage Corporation 4 2021-11-18 TCK2292xG, TCK2297xG Electrical Characteristics DC Characteristics (Ta = -40 to 85°C) Ta = 25°C Characteristics Symbol Quiescent current ( ON state) IQ Quiescent current ( ON state) IQ Ta = -40 to 85°C Test Condition IOUT = 0 mA (Note 3) IOUT = 0 mA Unit Min Typ. Max Min Max VIN = 1.8 V ― 0.1 ― ― ― μA VIN = 3.3 V ― 0.1 ― ― ― μA VIN = 5.5 V ― 0.1 ― ― 0.5 μA VIN = 1.8 V ― 1.2 ― ― ― μA VIN = 3.3 V ― 1.3 ― ― ― μA VIN = 5.5 V ― 1.4 ― ― 2.5 μA Quiescent current ( OFF state) IQ(OFF) VIN = 5.5 V, VOUT = OPEN, (Note 4) ― 0.07 ― ― 0.4 μA Switch leakage current( OFF state) ISD(OFF) VIN = 5.5 V, VOUT = GND, current through from VIN to VOUT. (Note 5) ― 0.02 ― ― 2 μA VOUT = 5.0 V, VIN = 0 V ― 0.01 ― ― 2 μA VIN = 5.0 V ― 25 ― ― 43 VIN = 3.3 V ― 31 ― ― 53 VIN = 1.8 V ― 52 ― ― 83 VIN = 1.2 V ― 104 ― ― 185 VIN = 1.1 V ― 136 ― ― ― ― 100 ― ― ― Reverse blocking current On resistance IRB RON Output discharge on resistance RSD IOUT = -0.5 A ― (Note 6) mΩ Ω Note 3: Only applies to the TCK22921G and TCK22971G Note 4: Except OFF-state switch current Note 5: Only applies to the TCK22971G, TCK22972G, TCK22973G, TCK22974G and TCK22975G Note 6: Only applies to the TCK22921G, TCK22922G, TCK22923G, and TCK22925G © 2017-2021 Toshiba Electronic Devices & Storage Corporation 5 2021-11-18 TCK2292xG, TCK2297xG AC Characteristics (Ta = 25°C) VIN = 5.0 V Characteristics Symbol VOUT rise time RL = 5 Ω, CL = 1.0 μF tr VOUT fall time tON Turn off delay Min Typ. Max TCK22921G TCK22971G ― 4.5 ― TCK22922G TCK22972G TCK22975G ― 666 ― TCK22923G TCK22973G ― 1364 ― TCK22925G TCK22974G ― 3380 ― ― 10 ― TCK22921G TCK22971G ― 3 ― TCK22922G TCK22972G TCK22975G tOFF RL = 5 Ω, CL = 1.0 μF ― 380 ― TCK22923G TCK22973G ― 750 ― TCK22925G TCK22974G ― 2000 ― ― 10 ― Unit μs RL = 5 Ω, CL = 1.0 μF tf Turn on delay Test Condition (Figure 1, Figure 2) μs μs RL = 5 Ω, CL = 1.0 μF μs AC Waveform VIH VCT tr VOUT 50% tf 90% 10% 50% VIL 90% 10% 90% VOUT 10% tOFF tON Figure 1 VOH VOL tr, tf, tON, tOFF Waveforms(Active High) VIH VCT 50% 50% VIL tr VOUT tf 90% 10% 90% VOUT 10% 10% Figure 2 90% tON tOFF VOH VOL tr, tf, tON, tOFF Waveforms(Active Low) © 2017-2021 Toshiba Electronic Devices & Storage Corporation 6 2021-11-18 TCK2292xG, TCK2297xG Application Note 1. Application circuit example (top view) The figure below shows the example of configuration Control GND LOAD VOUT VIN CIN CL RL 1) Input capacitor An input capacitor be sure to use CIN for the stable operation. And it is effective to reduce voltage overshoot or undershoot due to sharp changes in output current and also for improved stability of the power supply. When used, place CIN more than 1.0μF as close to VIN pin to improve stability of the power supply. 2) Output capacitor An output capacitor (COUT) is not necessary for the guaranteed operation. However, there is a possibility of overshoot or undershoot caused by output load transient response, board layout and parasitic components of load switch IC. In this case, an output capacitor with COUT more than 0.1μF is recommended. 3) Control pin The Control pin controls both the pass-through p-ch MOSFET and the discharge n-ch MOSFET (only for TCK2292xG), operated by the control voltage. Each control pin is equipped with Schmitt trigger. Also, pull down resistance equivalent to a few MΩ is connected between Control and GND, thus the load switch IC is in OFF state even when Control pin is OPEN. (except TCK22975G). A control pin for TCK22975G is Active low and does not have a pull down resistor, please use be sure to fix the potential of the Control pin to High or Low. 2. Reverse current blocking This device has a built-in Reverse current blocking (SW OFF state) circuit to block reverse current from VOUT to VIN when output p-ch MOSEFT turned off and input voltage is 0V. 3. Instructions and directions for use This device has built-in several functions, but these do not assure for the suppression of uprising device operation. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design. © 2017-2021 Toshiba Electronic Devices & Storage Corporation 7 2021-11-18 TCK2292xG, TCK2297xG 4. Power Dissipation Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40mm x 40mm (both sides of board)，t=1.6mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 28 PD - Ta Power Dissipation PD (mW) 1000 800 600 400 200 0 -40 0 40 80 Ambient Temperature Ta (℃) 120 Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into consideration the ambient temperature, input voltage, output current etc. and applying the appropriate derating for allowable power dissipation during operation. © 2017-2021 Toshiba Electronic Devices & Storage Corporation 8 2021-11-18 TCK2292xG, TCK2297xG TCK2292xG, TCK2297xG Representative Typical Characteristics RON - VIN RON - IOUT IQ - VIN (Except TCK22921G, TCK22971G) tOFF - Ta tOFF Response(Except TCK22975G) © 2017-2021 Toshiba Electronic Devices & Storage Corporation 9 2021-11-18 TCK2292xG, TCK2297xG TCK22921G, TCK22971G Representative Typical Characteristics t r - Ta tON - Ta tON Response TCK22922G, TCK22972G, TCK22975G Representative Typical Characteristics t r - Ta © 2017-2021 Toshiba Electronic Devices & Storage Corporation tON - Ta 10 2021-11-18 TCK2292xG, TCK2297xG tON Response (Except TCK22975G) TCK22923G, TCK22973G Representative Typical Characteristics t r - Ta tON - Ta tON Response © 2017-2021 Toshiba Electronic Devices & Storage Corporation 11 2021-11-18 TCK2292xG, TCK2297xG TCK22925G, TCK22974G Representative Typical Characteristics t r - Ta tON - Ta tON Response Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2017-2021 Toshiba Electronic Devices & Storage Corporation 12 2021-11-18 TCK2292xG, TCK2297xG Package dimension Unit: mm Weight: 1 mg (typ.) © 2017-2021 Toshiba Electronic Devices & Storage Corporation 13 2021-11-18 TCK2292xG, TCK2297xG Land pattern dimensions (for reference only) Unit: mm © 2017-2021 Toshiba Electronic Devices & Storage Corporation 14 2021-11-18 TCK2292xG, TCK2297xG RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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