TCK42xG Series
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCK42xG Series
Over Voltage Protection MOSFET Gate Driver IC
Description
TCK42xG series is Over Voltage Protection Gate Driver IC for
External N-channel MOSFET. This product support to MOSFET
operating in wide voltage line from 2.7 V to 28 V with various Over
Voltage Lock Out lineups. And this features low standby current,
less than 1 µA, built in charge pump circuit and MOSFET gatesource protection circuit. Package is very small and thin WCSP6G
(1.2 mm x 0.8 mm (typ.), t: 0.35 mm (max)). Thus this is suitable
for mobile, wearable system and power management circuit such
as load switch application.
WCSP6G
Weight : 0.61 mg ( typ.)
Applications
Load switch circuit for mobile, wearable, and IoT equipment
Features
Gate driver for N-channel Common Drain MOSFET
Gate driver for N-channel Single High side MOSFET
High maximum input voltage: VIN max = 40 V
Wide input voltage operation: VIN = 2.7 to 28 V
Gate-Source protection circuit
Over Voltage Lock Out : VIN_OVLO = 6.31 V, 10.83 V, 14.29 V, 23.26 V and 27.73 V typ
Under Voltage Lock Out : VIN_UVLO = 2.0 V typ
Built in Charge pump circuit: Gate source voltage VGS = 5.6 V and 10 V typ
Low standby current : IQ(OFF) = 0.9 µA max at VIN = 12 V (Except TCK424G, TCK425G)
Start of commercial production
2021-11
© 2021-2022
Toshiba Electronic Devices & Storage Corporation
1
2022-03-10
TCK42xG Series
Absolute Maximum Ratings (Note)
Characteristics
Symbol
Rating
Unit
VIN
-0.3 to 40
V
Output voltage
VOUT
-0.3 to 40
V
Control voltage
VCT
-0.3 to 6
V
VGATE1,2
-0.3 to 40
V
Power dissipation
PD
800 (Note 1)
mW
Operating temperature range
Topr
-40 to 85
°C
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to 150
°C
Input voltage
Output GATE voltage
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note1: Rating at mounting on a board: FR4 board. ( 40 mm × 40 mm × 1.6 mm, Cu 4 layer )
Top Marking, Pin Assignment (top view)
1
B
C
YYWW
42x
A
2
A1: VGATE1
B1: VGATE2
C1: VOUT
A2: VIN
B2: GND
C2: VCT
YYWW: Lot No.
42x: Device name code
420: TCK420G
421: TCK421G
422: TCK422G
423: TCK423G
424: TCK424G
425: TCK425G
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2022-03-10
TCK42xG Series
Operating Ranges
Characteristics
Symbol
Min.
Typ.
Max.
Unit
(Note 2)
2.7
28
V
Input operation voltage
VIN_opr
CONTROL High-level input voltage
VIH
1.2
5.5
V
CONTROL Low-level input voltage
VIL
0.4
V
Note 2: VIN_opr < VIN_OVLO Max of each product
List of Products Number, OVLO and VGS
Product number
TCK420G
TCK421G
TCK422G
TCK423G
TCK424G
TCK425G
OVLO
threshold, falling
typ (V)
27.73
23.26
14.29
14.29
10.83
6.31
© 2021-2022
Toshiba Electronic Devices & Storage Corporation
3
External MOSFET GateSource voltage
(Control ON) typ (V)
10
10
10
5.6
5.6
5.6
2022-03-10
TCK42xG Series
Block Diagram
VIN
VGATE1
OSC
Charge
Pump
Slew Rate
Control
Driver
OVLO
UVLO
Control
Logic
VCT
VOUT
VGATE2
GND
PIN Description
PIN
Name
Description
A1
VGATE1
Gate Driver Output for Gate 1
Or OPEN state (Non connection) for Single MOSFET use case
B1
VGATE2
Gate Driver Output for Gate 2
C1
VOUT
A2
VIN
B2
GND
Ground
C2
VCT
Mode control input terminal
VCT=High turn the external MOSFETs ON, VCT=Low, turn the external MOSFETs OFF
Monitoring Output voltage
Connecting Output (Source 2) of Common Drain MOSFET
Or Connecting Output (Source) of single MOSFET use case
Input power supply voltage
Connecting Output (Source 1) of Common Drain MOSFET
Or Connecting Output (Drain) of single MOSFET use case
Operation Table
2.7V ≤ VIN ≤ 28 V (Ta = -40 to 85°C)
VCT
VGATE1, VGATE2
High
Driver ON mode
Open
Low
Driver OFF mode
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2022-03-10
TCK42xG Series
Electrical Characteristics
11.1. DC Characteristics (Ta = -40 to 85°C)
Characteristics
Symbol
Ta = -40 to 85°C
(Note 3)
Ta = 25°C
Test Condition
Min.
Typ.
Max.
Min.
Max.
Unit
VIN UVLO threshold, VOUT falling
VIN_UVLO
2.0
2.5
V
VIN UVLO hysteresis
VIN_UVhyst
0.2
V
TCK420G
27.73
26.50
28.50
V
TCK421G
23.26
22.34
24.05
V
14.29
13.61
14.91
V
TCK424G
10.83
10.35
11.47
V
TCK425G
6.31
5.76
6.87
V
TCK420G
0.17
V
0.12
V
VCT: High, VIN = 2.7 V
140
200
µA
VCT: High, VIN = 4 V
130
420
µA
VCT: High, VIN = 5 V
140
300
µA
VCT: High, VIN = 9 V
170
460
µA
VCT: High, VIN = 12 V
185
490
µA
VCT: High, VIN = 20 V
(Except TCK422G)
220
560
µA
VCT: High, VIN = 2.7 V
75
130
µA
VCT: High, VIN = 4 V
95
150
µA
VCT: High, VIN = 5 V
100
160
µA
VCT: High, VIN = 9 V
(Except TCK425G)
125
200
µA
VCT: High, VIN = 12 V
(TCK423G only)
140
225
µA
VCT: Low, VIN = 2.7 V
0.14
0.3
µA
VCT: Low, VIN = 4 V
0.25
0.4
µA
VCT: Low, VIN = 5 V
0.28
0.5
µA
VCT: Low, VIN = 9 V
(Except TCK425G)
0.42
0.7
µA
VCT: Low, VIN = 12 V
(Except TCK424G, TCK425G)
0.52
0.9
µA
VCT: Low, VIN = 20 V
(TCK420G and TCK421G)
0.80
1.3
µA
VIN OVLO threshold,
VOUT falling
TCK422G
TCK423G
VIN_OVLO
TCK421G
VIN OVLO hysteresis
TCK422G
TCK423G
TCK424G
TCK425G
VIN_OVhyst
TCK420G
TCK421G
TCK422G
Input quiescent current
IQ(ON)
(ON state)
TCK423G
TCK424G
TCK425G
Standby current
(OFF state)
IQ(OFF)
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TCK42xG Series
11.1. DC Characteristics (Ta = -40 to 85°C) (continued)
Characteristics
Symbol
TCK420G
TCK421G
TCK422G
GATE Drive voltage
VGS
(VGATE1-VIN)
(Note 4)
(VGATE2-VOUT)
TCK423G
TCK424G
TCK425G
Control pull down resistance
Note 3:
Note 4:
RCT
Ta = -40 to 85°C
(Note 3)
Ta = 25°C
Test Condition
Unit
Min.
Typ.
Max.
Min.
Max.
VIN = 2.7 V
9.2
8
10
V
VIN = 5 V
10
9
11
V
VIN = 9 V
10
9
11
V
VIN = 12 V
10
9
11
V
VIN = 20 V (Except TCK422G)
10
9
11
V
VIN = 24 V (TCK420G only)
10
9
11
V
VIN = 2.7 V
5.6
4.9
6.3
V
VIN = 5 V
5.6
5.0
6.3
V
VIN = 9 V (Except TCK425G)
5.6
5.0
6.3
V
VIN = 12 V (TCK423G only)
5.6
5.0
6.3
V
VCT = 5 V
550
kΩ
This parameter is warranted by design
VIN is stable power supply condition
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2022-03-10
TCK42xG Series
11.2. AC Characteristics (Ta = 25°C, VIN = 5 V, CGATE1,2 (Note 5) = 4000 pF)
Characteristics
VGS ON time
VGS OFF time
Symbol
tON
TCK420G
TCK421G
TCK422G
TCK423G
TCK424G
TCK425G
tOFF
Test Condition (Figure 2,3,4)
Min.
Typ.
Max.
Unit
2.9
ms
52
µs
23
µs
Min.
Typ.
Max.
Unit
2.9
ms
44
µs
16.4
µs
Initial startup time
VGATE2 – VOUT = 1 V after VCT = High, IOUT = 0 mA
VGATE2 - VOUT = 1 V, after VCT = Low, IOUT = 0 mA
11.3. AC Characteristics (Ta = 25°C, VIN = 12 V, CGATE1,2 (Note 5) = 4000 pF)
Characteristics
VGS ON time
VGS OFF time
TCK420G
TCK421G
TCK422G
Symbol
Test Condition (Figure 2,3,4)
tON
Initial startup time
VGATE2 – VOUT = 1 V after VCT = High, IOUT = 0 mA
tOFF
VGATE2 - VOUT = 1 V, after VCT = Low, IOUT = 0 mA
TCK423G
TCK420G, TCK421G
11.4. AC Characteristics (Ta = 25°C, VIN = 20 V, CGATE1,2 (Note 5) = 4000 pF)
Characteristics
Symbol
Test Condition (Figure 2,3,4)
Min.
Typ.
Max.
Unit
VGS ON time
tON
Initial startup time
VGATE2 – VOUT = 1 V after VCT = High, IOUT = 0 mA
2.9
ms
VGS OFF time
tOFF
VGATE2 - VOUT = 1 V, after VCT = Low, IOUT = 0 mA
36
µs
Min.
Typ.
Max.
Unit
TCK420G
11.5. AC Characteristics (Ta = 25°C, VIN = 24 V, CGATE1,2 (Note 5) = 4000 pF)
Characteristics
Symbol
Test Condition (Figure 2,3,4)
VGS ON time
tON
Initial startup time
VGATE2 – VOUT = 1 V after VCT = High, IOUT = 0 mA
2.9
ms
VGS OFF time
tOFF
VGATE2 - VOUT = 1 V, after VCT = Low, IOUT = 0 mA
32
µs
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TCK42xG Series
11.6. AC Characteristics (Ta = 25°C, CGATE1,2 (Note 5) = 4000 pF)
Characteristics
Symbol
Test Condition (Figure 5,6)
Min.
Typ.
Max.
Unit
TCK420G
VIN = 24 to 29 V, VIN rising = 2 V/µs
VGS typ to VGS (VGATE2-VIN) = 1 V
IOUT = 0 mA
31
µs
TCK421G
VIN = 20 to 25 V, VIN rising = 2 V/µs
VGS typ to VGS (VGATE2-VIN) = 1 V
IOUT = 0 mA
34
µs
TCK422G
VIN = 12 to 15 V, VIN rising = 2 V/µs
VGS typ to VGS (VGATE2-VIN) = 1 V
IOUT = 0 mA
41
µs
TCK423G
VIN = 12 to 15 V, VIN rising = 2 V/µs
VGS typ to VGS (VGATE2-VIN) = 1 V
IOUT = 0 mA
16
µs
TCK424G
VIN = 9 to 12 V, VIN rising = 2 V/µs
VGS typ to VGS (VGATE2-VIN) = 1 V
IOUT = 0 mA
18
µs
TCK425G
VIN = 5 to 8 V, VIN rising = 2 V/µs
VGS typ to VGS (VGATE2-VIN) = 1 V
IOUT = 0 mA
19
µs
OVLO
VGS turn OFF time
tOVP
Note 5: CGATE1 and CGATE2 are input capacitance connected to each VGATE1 and VGATE2 instead of external MOSFET
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TCK42xG Series
11.7. Timing Chart
VIN
OVLO
UVLO
VGS (VGATE1- VIN)
VGS (VGATE2- VOUT)
tOFF
tON
VCT
tON
High
Low
Low
Fig.1 tON, tOFF
11.8. Switching Waveform and Test circuit
VGATE2- VOUT
VGATE2- VOUT
1V
1V
0V
tOFF
tON
VIH
VIH
VCT
VIL
VCT
50%
VIL
Fig.3 VGS OFF time Waveform
Fig.2 VGS ON time Waveform
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50%
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TCK42xG Series
Fig.4 VGS ON and OFF time test circuit
VIN
VIN_OVLO
VGS
(VGATE2- VIN)
1V
tOVP
Fig.5 tOVP Waveform
Fig.6 tOVP test circuit
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TCK42xG Series
Application Note
12.1. Common Drain Connection N-channel MOSFET circuit example
LOAD
Power
Supply
VGATE2
VGATE1
VIN
CIN
VCT
TCK42xG
RL
CL
VOUT
COUT
GND
1.
Input and Output capacitor
An input capacitor (CIN) and an output capacitor (COUT) are recommended for the stable operation. And it is effective
to reduce voltage overshoot or undershoot due to sharp changes in output current and also for improved stability of the
power supply. When used, place CIN and COUT as close to VIN pin and VOUT pin to improve stability of the power supply.
2.
VCT pin
VCT pin is pull down connection to GND. VCT High level voltage must be under 5.5V VIH max.
3.
VGATE1,2 pin and VOUT pin
VGATE1 pin is connected to Gate of VIN side MOSFET. VGATE2 pin is connected to Gate of VOUT side MOSFET.
VOUT pin is connected to Source of VOUT side MOSFET. When the gate driver IC turns off state, VGATE1 terminal
voltage is close to VIN voltage dropped by parasitic diode forward voltage. This circuit works to protect over voltage for
VIN side MOSFET Gate-Source terminal. VOUT terminal works to protect VOUT side MOSFET as same circuit.
4.
Turn on recovery time after Over Voltage Lock Out (OVLO)
Once VIN is in normal voltage range after OVLO, the turn on recovery time is similar VGS ON time (tON).
5.
Under Voltage Lock Out (UVLO) and Over Voltage Lock Out (OVLO)
UVLO and OVLO are designed in these products, but these are not designed to constantly ensure the suppression of
the gate driver IC and external MOSFETs within operation limits. Depending on the condition during actual usage, it could
affect the electrical characteristic specification and reliability. To select external MOSFETs, please consider enough
electrical design margin. When using these products, please read through and understand the concept of dissipation for
absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products
under absolute maximum ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the
design.
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TCK42xG Series
Common Drain Connection N-channel MOSFET Switching Waveform
Typical switching waveforms with TOSHIBA MOSFETs
MOSFET
OVP Gate
Driver IC
TCK423G
(VGS = 5.6 V)
TCK421G
(VGS = 10 V)
Test conditions
Part Number
Description
TPN1R603PL
Single N-channel MOSFET
VDSS: 30 V, VGSS: ± 20 V
RDS(ON): 1.2 mΩ typ at VGS = 10 V
Package: TSON Advance
TPHR6503PL1
Single N-channel MOSFET
VDSS: 30 V, VGSS: ± 20 V
RDS(ON): 0.41 mΩ typ at VGS = 10 V
Package: SOP Advance(N)
Turn ON and OFF
Over Voltage Lock Out
VIN = 12 V (TCK423G)
VIN = 20 V (TCK421G)
IOUT = 1 A, 3 A
CIN = 1 µF
COUT = 1 µF
VCT = 0 V ⇔ 1.2 V
Ta = 25 °C
VIN = 12 V ⇔ 15 V (TCK423G)
VIN = 20 V ⇔ 25 V (TCK421G)
IOUT = 1 A
CIN = 1 µF
COUT = 1 µF
VCT = 1.2 V
Ta = 25 °C
TCK423G + TPN1R603PL x 2pcs
1.
Turn ON and OFF (IOUT = 1 A)
VCT: 1 V/div
VCT: 1 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
IOUT: 2 A/div
100µs/div
1ms/div
2.
IOUT: 2 A/div
Turn ON and OFF (IOUT = 3 A)
VCT: 1 V/div
VCT: 1 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
IOUT: 2 A/div
100µs/div
1ms/div
3.
IOUT: 2 A/div
Over Voltage Lock Out
VIN: 5 V/div
VIN: 5 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
100µs/div
IOUT: 2 A/div
IOUT: 2 A/div
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Toshiba Electronic Devices & Storage Corporation
1ms/div
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TCK42xG Series
TCK421G + TPHR6503PL1 x 2pcs
1.
Turn ON and OFF (IOUT = 1 A)
VCT: 1 V/div
VCT: 1 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
1ms/div
2.
IOUT: 2 A/div
100µs/div
Turn ON and OFF (IOUT = 3 A)
VCT: 1 V/div
VGATE2: 10 V/div
VCT: 1 V/div
VOUT: 10 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
IOUT: 2 A/div
1ms/div
3.
IOUT: 2 A/div
100µs/div
IOUT: 2 A/div
Over Voltage Lock Out
VIN: 5 V/div
VIN: 5 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
100µs/div
1ms/div
IOUT: 2 A/div
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IOUT: 2 A/div
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TCK42xG Series
12.2. Single N-channel MOSFET circuit example
OPEN
Power
Supply
LOAD
VGATE2
VGATE1
VIN
CIN
VCT
TCK42xG
RL
CL
VOUT
COUT
GND
1.
Input and Output capacitor
An input capacitor (CIN) and an output capacitor (COUT) are recommended for the stable operation. And it is effective
to reduce voltage overshoot or undershoot due to sharp changes in output current and also for improved stability of the
power supply. When used, place CIN and COUT as close to VIN pin and VOUT pin to improve stability of the power supply.
2.
VCT pin
VCT pin is pull down connection to GND. VCT High level voltage must be under 5.5V VIH max.
3.
VGATE1,2 pin and VOUT pin
VGATE1 pin is OPEN state/Non connection. VGATE2 pin is connected to Gate of MOSFET. VOUT pin is connected
to Source of MOSFET. When the gate driver IC turns off state, VGATE2 terminal voltage is close to VOUT voltage
dropped by parasitic diode forward voltage. This circuit works to protect over voltage for MOSFET Gate-Source terminal.
4.
Turn on recovery time after Over Voltage Lock Out
Once VIN is in normal voltage range after OVLO, the turn on recovery time is similar VGS ON time (tON).
5.
Under Voltage Lock Out (UVLO) and Over Voltage Lock Out (OVLO)
UVLO and OVLO are designed in these products, but these are not designed to constantly ensure the suppression of
the gate driver IC and external MOSFETs within operation limits. Depending on the condition during actual usage, it
could affect the electrical characteristic specification and reliability. To select external MOSFETs, please consider enough
electrical design margin. When using these products, please read through and understand the concept of dissipation for
absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these
products under absolute maximum ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system
into the design.
© 2021-2022
Toshiba Electronic Devices & Storage Corporation
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2022-03-10
TCK42xG Series
Single N-channel MOSFET Switching Waveform
Typical switching waveforms with TOSHIBA MOSFETs
OVP Gate
Driver IC
TCK423G
(VGS = 5.6 V)
TCK421G
(VGS = 10 V)
MOSFET
Test conditions
Part Number
Description
TPN1R603PL
Single N-channel MOSFET
VDSS: 30 V, VGSS: ± 20 V
RDS(ON): 1.2 mΩ typ at VGS = 10 V
Package: TSON Advance
TPHR6503PL1
Single N-channel MOSFET
VDSS: 30 V, VGSS: ± 20 V
RDS(ON): 0.41 mΩ typ at VGS = 10 V
Package: SOP Advance(N)
Turn ON and OFF
Over Voltage Lock Out
VIN = 12 V (TCK423G)
VIN = 20 V (TCK421G)
IOUT = 1 A, 3 A
CIN = 1 µF
COUT = 1 µF
VCT = 0 V ⇔ 1.2 V
Ta = 25 °C
VIN = 12 V ⇔ 15 V (TCK423G)
VIN = 20 V ⇔ 25 V (TCK421G)
IOUT = 1 A
CIN = 1 µF
COUT = 1 µF
VCT = 1.2 V
Ta = 25 °C
TCK423G + TPN1R603L
1.
Turn ON and OFF (IOUT = 1 A)
VCT: 1 V/div
VCT: 1 V/div
VGATE2: 10 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
VOUT: 10 V/div
IOUT: 2 A/div
1ms/div
2.
100µs/div
IOUT: 2 A/div
Turn ON and OFF (IOUT = 3 A)
VCT: 1 V/div
VCT: 1 V/div
VGATE2: 10 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
VOUT: 10 V/div
IOUT: 2 A/div
1ms/div
3.
100µs/div
IOUT: 2 A/div
Over Voltage Lock Out
VIN: 5 V/div
VIN: 5 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
100µs/div
IOUT: 2 A/div
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Toshiba Electronic Devices & Storage Corporation
1ms/div
15
IOUT: 2 A/div
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TCK42xG Series
TCK421G + TPHR6503PL1
6.
Turn ON and OFF (IOUT = 1 A)
VCT: 1 V/div
VCT: 1 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
IOUT: 2 A/div
1ms/div
7.
Turn ON and OFF (IOUT = 3 A)
100µs/div
VCT: 1 V/div
VCT: 1 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
IOUT: 2 A/div
100µs/div
1ms/div
8.
IOUT: 2 A/div
IOUT: 2 A/div
Over Voltage Lock Out
VIN: 5 V/div
VIN: 5 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
VGATE2: 10 V/div
VOUT: 10 V/div
100µs/div
1ms/div
IOUT: 2 A/div
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IOUT: 2 A/div
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TCK42xG Series
Representative Typical Characteristics
13.1. Gate voltage vs. Input voltage
VGS = 10 V (TCK421G)
VGATE1 vs. VIN
VGATE2 vs. VIN
40
GATE2 Voltage (V)
GATE1 Voltage (V)
40
30
20
85°C
10
25°C
30
20
85°C
10
25°C
-40°C
-40°C
0
0
10
20
Input Voltage (V)
30
0
40
0
10
20
Input Voltage (V)
30
40
VGS = 5.6 V (TCK423G)
VGATE1 vs. VIN
30
20
85°C
25°C
-40°C
10
0
30
20
10
20
Input Voltage (V)
30
© 2021-2022
Toshiba Electronic Devices & Storage Corporation
40
85°C
25°C
-40°C
10
0
0
VGATE2 vs. VIN
40
GATE2 Voltage (V)
GATE1 Voltage (V)
40
0
10
20
30
40
Input Voltage (V)
17
2022-03-10
TCK42xG Series
13.2. Gate voltage vs. Gate current
1.
VGS = 10V (TCK421G)
VIN = 20 V
VGS(VGATE1-VIN) vs. IGATE
12
85°C
VGS (VGATE2 - VIN) (V)
VGS (VGATE1 - VIN) (V)
10
25°C
8
-40°C
6
4
2
0
0
50
100
150
10
85°C
25°C
8
-40°C
6
4
2
0
200
Gate Current (μA)
VGS(VGATE2-VIN) vs. IGATE
12
0
50
100
150
200
Gate Current (μA)
VIN = 12 V
VGS(VGATE1-VIN) vs. IGATE
12
85°C
8
VGS (VGATE2 - VIN) (V)
VGS (VGATE1 - VIN) (V)
10
25°C
-40°C
6
4
2
0
0
50
100
Gate Current (μA)
150
© 2021-2022
Toshiba Electronic Devices & Storage Corporation
VGS(VGATE2-VIN) vs. IGATE
12
10
18
25°C
8
-40°C
6
4
2
0
200
85°C
0
50
100
150
Gate Current (μA)
200
2022-03-10
TCK42xG Series
2.
VGS = 5.6 V (TCK423G)
VIN = 12 V
VGS(VGATE1-VIN) vs. IGATE
85°C
5
25°C
-40°C
4
3
2
1
0
0
50
100
150
VGS(VGATE2-VIN) vs. IGATE
6
VGS (VGATE2 - VIN) (V)
VGS (VGATE1 - VIN) (V)
6
25°C
5
-40°C
4
3
2
1
0
200
85°C
Gate Current (μA)
0
50
100
Gate Current (μA)
150
200
VIN = 9 V
VGS(VGATE1-VIN) vs. IGATE
85°C
5
25°C
-40°C
4
3
2
1
0
50
100
150
Gate Current (μA)
© 2021-2022
Toshiba Electronic Devices & Storage Corporation
200
85°C
25°C
5
-40°C
4
3
2
1
0
0
VGS(VGATE2-VIN) vs. IGATE
6
VGS (VGATE2 - VIN) (V)
VGS (VGATE1 - VIN) (V)
6
0
50
100
150
200
Gate Current (μA)
19
2022-03-10
TCK42xG Series
13.3. Quiescent current vs. Input voltage
VGS = 5.6 V (TCK423G)
VGS = 10 V (TCK421G)
IQ(ON) vs. VIN
250
85°C
400
Quiescent Current (ON) (μA)
Quiescent Current (ON) (μA)
500
25°C
-40°C
300
200
100
0
0
10
20
IQ(ON) vs. VIN
30
150
100
85°C
50
0
40
Input Voltage (V)
200
25°C
-40°C
0
10
20
Input Voltage (V)
30
40
Quescent Current (OFF) (μA)
13.4. Standby current vs. Input voltage (Note 6)
IQ(OFF) vs. VIN
2
1.5
1
85°C
0.5
25°C
-40°C
0
0
10
20
Input Voltage (V)
30
40
Note 6: Common characteristic of VGS = 10 V and 5.6 V
© 2021-2022
Toshiba Electronic Devices & Storage Corporation
20
2022-03-10
TCK42xG Series
Package Information
WCSP6G
Unit: mm
Weight: 0.61 mg (Typ.)
© 2021-2022
Toshiba Electronic Devices & Storage Corporation
21
2022-03-10
TCK42xG Series
Land pattern dimensions for reference only
WCSP6G
Unit: mm
0.4
0.4
Φ0.23
© 2021-2022
Toshiba Electronic Devices & Storage Corporation
22
2022-03-10
TCK42xG Series
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