TCR13AGADJ,LF

TCR13AGADJ TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR13AGADJ 1.3 A CMOS Ultra Low Dropout Regulator The TCR13AGADJ is CMOS single output voltage regulator with an on/off control input, featuring ultra low dropout voltage, low inrush current and fast load transient response. This voltage regulator is available in output voltage adjustable type from 0.55 V to 3.6 V and capable of driving up to 1.3 A. Other features include overcurrent protection, thermal shutdown, inrush current reduction, under voltage lockout and auto-discharge. The TCR13AGADJ is offered in the ultra small package WCSP6F (0.8 mm x 1.2 mm (typ.), t: 0.33 mm (max)) As small ceramic input and output capacitors can be used with the TCR13AGADJ, this device is ideal for portable applications that require high-density board assembly such as cellular phones. WCSP6F Weight : 0.61 mg ( typ.) Features • Low dropout voltage VDO = 92 mV (typ.) at 0.9 V output, VBIAS = 3.3 V, IOUT = 1.0 A VDO = 9.2 mV (typ.) at 0.9 V output, VBIAS = 3.3 V, IOUT = 0.1 A • Wide range output voltage (Adjustable from 0.55 V to 3.6 V) • Fast load transient response -100 / +115 mV (typ.) at 0.01 A⇔1 A, COUT ≥ 4.7 μF • • Overcurrent protection Thermal shutdown • Inrush current reduction • Under voltage lockout • Soft start function • Auto-discharge • Pull down connection between CONTROL and GND • Ultra small package WCSP6F (0.8 mm x 1.2 mm (typ.), t: 0.33 mm (max)) • Stable with over 4.7 μF Input capacitor, 1.0 μF Bias capacitor and 4.7 μF output ceramic capacitor Notice This device is sensitive to electrostatic discharge. Please ensure equipment, operator and tools are adequately earthed when handling. Start of commercial production 2016-11 © 2017 - 2022 Toshiba Electronic Devices & Storage Corporation 1 2022-03-25 TCR13AGADJ Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Bias voltage VBIAS 6.0 V Input voltage VIN 6.0 V Control voltage VCT -0.3 to 6.0 V Adjustable voltage VADJ -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 ≤ 6.0 V PD 1.9 Power dissipation Junction temperature Storage temperature range (Note 1) W Tj 150 °C Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Rating at mounting on a board (Glass epoxy board (FR4) dimension: 40 mm x 40 mm (4 layer), t = 1.8 mm) Operating Ranges Characteristics Symbol Rating Unit VOUT ≤ 1.1 V, IOUT = 1 mA 2.5 to 5.5 VOUT > 1.1 V, IOUT = 1 mA VOUT + 1.4 V to 5.5 V Bias voltage VBIAS Input voltage VIN Control voltage VCT Output voltage VOUT Output current IOUT 1. 3 (Max) Operation Temperature Topr -40 to 85 °C COUT ≥ 4.7μF ― COUT CIN CBIAS VOUT + 0.1 V to VBIAS (Note 2) -0.3 to VBIAS 0.55 to 3.6 CIN ≥ 4.7μF CBIAS ≥ 1.0μF V V (Note 3) V (Note 4) A ― ― Note 2: IOUT = 1 mA. Please use within Absolute Maximum Ratings Junction temperature and Operation Temperature Ranges. Note 3: Output voltage adjustable type. Please refer to Application Note (Page 7). Note 4: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. Maximum output current of operating ranges table is defined as lifetime average junction temperature of +45℃ where maximum output current = lifetime average current to avoid electro migration. © 2017 - 2022 Toshiba Electronic Devices & Storage Corporation 2 2022-03-25 TCR13AGADJ Pin Assignment (top view) 1 2 1 2 A VOUT VIN B VADJ CONTROL C GND VBIAS A B C Top Marking (top view) 1 2 A C XJX B © 2017 - 2022 Toshiba Electronic Devices & Storage Corporation 3 2022-03-25 TCR13AGADJ Block Diagram VIN VBIAS VOUT Under voltage Current lockout Limit Thermal shutdown V ADJ + - CONTROL Control Logic Pull down GND Operation Logic table Control inputs Output voltage(V) High VOUT Low 0 V (Output discharge) © 2017 - 2022 Toshiba Electronic Devices & Storage Corporation 4 2022-03-25 TCR13AGADJ Electrical Characteristics (Unless otherwise specified, VIN = VOUT + 0.5 V, IOUT = 50 mA, CIN = 4.7 μF, CBIAS = 1.0 μF, COUT = 4.7 μF) Tj = -40 to 85°C (Note 8) Tj = 25°C Characteristics Bias voltage Input voltage Adjustable voltage Symbol VBIAS VIN VADJ Test Condition Unit Min Typ. Max Min Max VOUT ≤ 1.1 V, IOUT = 1 mA 2.5 ― 5.5 2.5 5.5 V VOUT > 1.1 V, IOUT = 1 mA VOUT + 1.4 V ― 5.5 VOUT + 1.4 V 5.5 V VOUT + 0.1 V ― VBIAS VOUT + 0.1 V VBIAS V 0.490 0.500 0.510 ― ― V IOUT = 1 mA (Note 5) ― Line regulation Reg･line VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 1 mA ― 1 15 ― ― mV Load regulation Reg･load 0.01 A ≤ IOUT ≤ 1 A ― 2 ― ― ― mV ― 56 72 ― 92 μA ― 0.1 1 μA ― 0.8 ― ― 2 μA ― μA Quiescent current Stand-by current Control pull down current Dropout voltage Under voltage lockout IB IOUT = 0 mA, VBIAS = 2.5 V (Note 6) ICT ― ― 0.1 ― ― ― ― VDO IOUT = 1 A, VBIAS = 3.3 V (Note 7)( Note 9) ― 92 ― ― 163 mV IBIAS (OFF) VCT = 0 V IIN(OFF) VCT = 0 V (Note 6) VUVLO VIN voltage ― 0.5 ― ― 0.65 V Temperature coefficient TCVO -40°C