TCR2EE30,LM(CT

TCR2EF series, TCR2EE series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EF series TCR2EE series 200 mA CMOS Low Dropout Regulator with Fast Load Transient Response The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of driving up to 200 mA. They feature overcurrent protection, an Auto-discharge function. The TCR2EF and TCR2EE series has a low dropout voltage of 180 mV (2.5 V output, IOUT = 150 mA) with low output noise voltage of 35 μVrms (2.5 V output) and a load transient response of only ⊿VOUT = ±60 mV (IOUT = 1 mA⇔150 mA, COUT = 1.0 μF). Thus, the TCR2EF and TCR2EE series are suitable for sensitive power supply such as Analog and RF applications. SMV ESV Features • Low dropout voltage Weight : SMV (SOT-25)(SC-74A) : 16 mg ( typ.) ESV (SOT-553) : 3.0 mg ( typ.) VDO = 150 mV (typ.) at 3.0 V output, IOUT = 150 mA VDO = 180 mV (typ.) at 2.5 V output, IOUT = 150 mA VDO = 230 mV (typ.) at 1.8 V output, IOUT = 150 mA VDO = 380 mV (typ.) at 1.2 V output, IOUT = 150 mA VDO = 510 mV (typ.) at 1.0 V output, IOUT = 150 mA • Low output noise voltage (VNO = 35 μVrms (typ.) at 2.5 V output, IOUT = 10 mA, 10 Hz < f < 100 kHz) • Fast load transient response (⊿VOUT = ±60 mV (typ.) at IOUT = 1 mA ⇔ 150 mA, COUT =1.0 μF) • Low quiescent bias current (IB = 35 μA (typ.) at IOUT = 0 mA) • High ripple rejection ratio (73 dB (typ.) at 2.5 V output, IOUT = 10 mA, f = 1 kHz) • Wide range output voltage line up (VOUT = 1.0 to 5.0 V) • High VOUT accuracy ±1.0 % (1.8 V ≤ VOUT) • Overcurrent protection • Auto-discharge • Pull down connection between CONTROL and GND • Ceramic capacitors can be used (CIN = 0.1 μF, COUT = 1.0 μF) • Small package ESV (SOT-553) (1.6 mm x 1.6 mm x 0.55 mm) General package SMV (SOT-25) (2.8 mm x 2.9 mm x 1.1 mm) Start of commercial production 2012-10 © 2017-2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-20 TCR2EF series, TCR2EE series Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 SMV Power dissipation PD ESV Junction temperature Storage temperature range Note: V 200 (Note 1) 580 (Note 2) 150 (Note 1) 320 (Note 3) mW Tj 150 °C Tstg −55 to 150 °C Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit Rating Note 2: Rating at mounting on a board (FR4 board dimension: 25.4 mm × 25.4 mm × 1.6 mm) Note 3: Rating at mounting on a board (FR4 board dimension: 30 mm × 30 mm × 0.8 mm) Operating Ranges Characteristics Symbol Rating Input voltage VIN 1.5 to 5.5 V Control voltage VCT 0 to 5.5 V Output voltage VOUT 1.0 to 5.0 V Output current IOUT Operation Temperature Output Capacitance Input Capacitance DC 200 Unit (Note 4) (Note 5) V mA Topr -40 to 85 °C COUT ≥ 1.0 μF ― CIN ≥ 0.1 μF ― Note 4: IOUT = 1 mA. Please refer to Dropout voltage (Page 5) and use it within Absolute Maximum Ratings Junction temperature and Operation Temperature Ranges. Note 5: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. © 2017-2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-20 TCR2EF series, TCR2EE series Pin Assignment (top view) SMV(SOT-25)(SC-74A) VOUT NC 5 4 1 VIN 2 GND 3 CONTROL © 2017-2019 Toshiba Electronic Devices & Storage Corporation ESV(SOT-553) VOUT NC 5 1 CONTROL 3 4 2 3 GND VIN 2019-06-20 TCR2EF series, TCR2EE series List of Products Number, Output voltage and Marking Product No. VOUT (V) (typ.) Marking SMV(SOT-25) ESV(SOT-553) TCR2EF10 TCR2EE10 1.0 TCR2EF105 TCR2EE105 TCR2EF11 Product No. VOUT (V) (typ.) Marking SMV(SOT-25) ESV(SOT-553) 1N0 TCR2EF28 TCR2EE28 2.8 2N8 1.05 1NA TCR2EF285 TCR2EE285 2.85 2ND TCR2EE11 1.1 1N1 TCR2EF29 TCR2EE29 2.9 2N9 TCR2EF115 TCR2EE115 1.15 1NB - TCR2EE295 2.95 2NE TCR2EF12 TCR2EE12 1.2 1N2 TCR2EF30 TCR2EE30 3.0 3N0 TCR2EF125 TCR2EE125 1.25 1NC - TCR2EE305 3.05 3NA TCR2EF13 TCR2EE13 1.3 1N3 TCR2EF31 TCR2EE31 3.1 3N1 TCR2EF135 TCR2EE135 1.35 1ND TCR2EF32 TCR2EE32 3.2 3N2 TCR2EF14 TCR2EE14 1.4 1N4 TCR2EF33 TCR2EE33 3.3 3N3 - TCR2EE145 1.45 1NE - TCR2EE335 3.35 3ND TCR2EF15 TCR2EE15 1.5 1N5 - TCR2EE34 3.4 3N4 - TCR2EE17 1.7 1N7 - TCR2EE35 3.5 3N5 TCR2EF18 TCR2EE18 1.8 1N8 TCR2EF36 TCR2EE36 3.6 3N6 - TCR2EE185 1.85 1NF - TCR2EE39 3.9 3N9 TCR2EF19 TCR2EE19 1.9 1N9 TCR2EF40 TCR2EE40 4.0 4N0 TCR2EF20 TCR2EE20 2.0 2N0 TCR2EF41 TCR2EE41 4.1 4N1 - TCR2EE24 2.4 2N4 - TCR2EE42 4.2 4N2 TCR2EF25 TCR2EE25 2.5 2N5 TCR2EF45 TCR2EE45 4.5 4N5 TCR2EF27 TCR2EE27 2.7 2N7 - TCR2EE48 4.8 4N8 - TCR2EE275 2.75 2NF TCR2EF50 TCR2EE50 5.0 5N0 Please ask your local retailer about the devices with other output voltages. Marking (top view) Example: TCR2EF33 (3.3 V output) 3N3 © 2017-2019 Toshiba Electronic Devices & Storage Corporation Example: TCR2EE33 (3.3 V output) 3N3 4 2019-06-20 TCR2EF series, TCR2EE series Electrical Characteristics (Unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 0.1 μF, COUT = 1.0 μF, Tj = 25°C) Characteristics Output voltage accuracy Input voltage Symbol VOUT VIN Test Condition Min Typ. Max Unit VOUT < 1.8 V -18 ― +18 mV 1.8 V ≤ VOUT -1.0 ― +1.0 % IOUT = 1 mA 1.5 ― 5.5 V VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 1 mA ― 1 15 mV ― 15 30 mV IOUT = 0 mA ― 35 60 μA VCT = 0 V ― 0.1 1.0 μA ― 180 230 mV ― 100 ― ppm/°C ― 35 ― μVrms ― 73 ― dB ― ±60 ― mV IOUT = 50 mA (Note 6) Line regulation Reg･line Load regulation Reg･load 1 mA ≤ IOUT ≤ 150 mA Quiescent current IB Stand-by current IB (OFF) Dropout voltage VDO IOUT = 150 mA Temperature coefficient TCVO −40°C ≤ Topr ≤ 85°C Output noise voltage VNO VIN = VOUT + 1 V, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz (Note 7) Ripple rejection ratio R.R. VIN = VOUT + 1 V, IOUT = 10 mA, f = 1 kHz, VRipple = 500 mVp-p (Note 7) (Note 7) Load transient response ⊿VOUT Control voltage (ON) VCT (ON) ― 1.0 ― 5.5 V Control voltage (OFF) VCT (OFF) ― 0 ― 0.4 V IOUT = 1 mA⇔150 mA, COUT = 1.0 μF Note 6: Stable state with fixed IOUT condition Note 7: The 2.5 V output product Note 8: All characterisitcs of over 4.5 V output products are measured at VIN = VOUT + 0.5 V conditions. Dropout voltage (IOUT = 150 mA, CIN = 0.1 μF, COUT = 1.0 μF, Tj = 25°C) Output voltages Min Typ. Max 1.0 V, 1.05 V ― 510 770 1.1 V, 1.15 V ― 440 670 1.2 V, 1.25 V ― 380 570 1.3 V ― 350 470 ― 310 420 1.5 V ≤ VOUT < 1.8 V ― 290 390 1.8 V ≤ VOUT < 2.5 V ― 230 310 2.5 V ≤ VOUT < 3.0 V ― 180 230 3.0 V ≤ VOUT ≤ 5.0 V ― 150 200 1.4 V Symbol VDO © 2017-2019 Toshiba Electronic Devices & Storage Corporation 5 Unit mV 2019-06-20 TCR2EF series, TCR2EE series Application Note Examples of Application Circuit SMV ESV VOUT NC NC 0.1 μF VIN GND 1.0 μF 1.0 μF VOUT CONTROL CONTROL pin connection Operation HIGH ON LOW OFF OPEN OFF 0.1 μF 1. CONTROL GND VIN The figures above show the examples of configuration for using a Low dropout regulator. Insert a capacitor at VOUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used). 2. Power Dissipation Both unit and board mounted power dissipation ratings for TCR2EF series and TCR2EE series are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board shown below. Test Board for Thermal Resistance SMV ESV *Board material: FR4 board *Board material: FR4 board Board dimension: 25.4 mm × 25.4 mm × 1.6 mm Board dimension: 30 mm × 30 mm × 0.8 mm Copper area: 645 mm2 Copper area: 20 mm2 PD – Ta (SMV) PD – Ta (ESV) 400 ① Board dimension 25.4 mm x 25.4 mm, x 1.6 mm Copper area 645 mm2, mounted on FR4 Board ② Unit Rating (mW) (mW) 800 600 PD Power dissipation Power dissipation PD ① 400 ② 200 200 ② 100 ① Board dimension 30 mm x 30 mm, x 0.8 mm Copper area 20 mm2, mounted on FR4 Board ② Unit Rating 0 −40 0 40 80 Ambient temperature Ta (℃) © 2017-2019 Toshiba Electronic Devices & Storage Corporation ① 300 0 −40 120 0 40 80 120 Ambient temperature Ta (℃) 6 2019-06-20 TCR2EF series, TCR2EE series Attention in Use ● Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommends the ESR of ceramic capacitor be under 10 Ω. ● Mounting The long distance between IC and output capacitor might affect phase compensation by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need to be large and make the wire impedance small as possible. ● Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of ambient temperature, input voltage, and output current etc., we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 percent. ● Overcurrent Protection Overcurrent protection is designed in these products, but this does not assure for the suppression of uprising device operation. If output pins and GND pins are shorted out, these products might break down. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design. © 2017-2019 Toshiba Electronic Devices & Storage Corporation 7 2019-06-20 TCR2EF series, TCR2EE series Representative Typical Characteristics(Note) 1) Output voltage vs. Input voltage VOUT = 1.8 V IOUT = 1mA IOUT = 50mA IOUT = 150mA Input voltage VIN VOUT (V) CIN = 0.1 μF, COUT = 1 μF Output voltage Output voltage VOUT (V) VOUT = 1.2 V (V) CIN = 0.1 μF, COUT = 1 μF IOUT = 1mA IOUT = 50mA IOUT = 150mA Input voltage VIN VOUT = 2.5 V VOUT = 3.0 V VOUT (V) CIN = 0.1 μF, COUT = 1 μF IOUT = 1mA Output voltage Output voltage VOUT (V) CIN = 0.1 μF, COUT = 1 μF IOUT = 50mA IOUT = 150mA Input voltage VIN (V) (V) IOUT = 1mA IOUT = 50mA IOUT = 150mA Input voltage VIN (V) 2) Output voltage vs. Output current VOUT = 1.8 V VIN = 2.8 V, CIN = 0.1 μF, COUT = 1 μF CIN = 0.1 μF, COUT = 1 μF Output voltage VOUT (V) VIN = 2.2 V, Output voltage VOUT (V) VOUT = 1.2 V Output current IOUT (mA) © 2017-2019 Toshiba Electronic Devices & Storage Corporation Output current IOUT (mA) 8 2019-06-20 TCR2EF series, TCR2EE series VOUT = 3.0 V VIN = 4.0 V, CIN = 0.1 μF, COUT = 1 μF CIN = 0.1 μF, COUT = 1 μF Output voltage VOUT (V) VIN = 3.5 V, Output voltage VOUT (V) VOUT = 2.5 V Output current IOUT (mA) Output current IOUT (mA) VOUT = 1.8 V VIN = 2.2 V, VIN = 2.8 V, CIN = 0.1 μF, COUT = 1 μF Ambient temperature Ta (°C) Ambient temperature Ta (°C) VOUT = 3.0 V VIN = 3.5 V, VIN = 4.0 V, CIN = 0.1 μF, COUT = 1 μF CIN = 0.1 μF, COUT = 1 μF IOUT = 50 mA IOUT = 50 mA Output voltage VOUT (V) VOUT = 2.5 V Output voltage VOUT (V) CIN = 0.1 μF, COUT = 1 μF IOUT = 50 mA Output voltage IOUT = 50 mA VOUT (V) VOUT = 1.2 V Output voltage VOUT (V) 3) Output voltage vs. Ambient temperature Ambient temperature Ta (°C) Ambient temperature Ta (°C) © 2017-2019 Toshiba Electronic Devices & Storage Corporation 9 2019-06-20 TCR2EF series, TCR2EE series 4) Dropout voltage vs. Output current VOUT = 1.8 V CIN = 0.1 μF, COUT = 1 μF Dropout voltage VDO (mV) CIN = 0.1 μF, COUT = 1 μF Output current IOUT (mA) Output current IOUT (mA) VOUT = 2.5 V VOUT = 3.0 V CIN = 0.1 μF, COUT = 1 μF Dropout voltage VDO (mV) Dropout voltage VDO (mV) Dropout voltage VDO (mV) VOUT = 1.2 V Output current IOUT (mA) Output current IOUT (mA) 5) Quiescent current vs. Input voltage VOUT = 1.8 V CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA Input voltage VIN © 2017-2019 Toshiba Electronic Devices & Storage Corporation Quiescent current IB (μA) VOUT = 1.2 V Quiescent current IB (μA) CIN = 0.1 μF, COUT = 1 μF (V) CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA Input voltage VIN 10 (V) 2019-06-20 TCR2EF series, TCR2EE series CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA Input voltage VIN 6) VOUT = 3.0 V Quiescent current IB (μA) Quiescent current IB (μA) VOUT = 2.5 V (V) Input voltage VIN (V) Quiescent current vs. Ambient temperature VOUT = 1.8 V Quiescent current IB (μA) VIN = 2.2 V CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA VIN = 2.8 V CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA Ambient temperature Ta (°C) Ambient temperature Ta (°C) VOUT = 2.5 V VOUT = 3.0 V VIN = 3.5 V CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA Quiescent current IB (μA) Quiescent current IB (μA) VOUT = 1.2 V Quiescent current IB (μA) CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA Ambient temperature Ta (°C) © 2017-2019 Toshiba Electronic Devices & Storage Corporation VIN = 4.0 V CIN = 0.1 μF, COUT = 1 μF IOUT = 0 mA Ambient temperature Ta (°C) 11 2019-06-20 TCR2EF series, TCR2EE series 7) Output voltage vs. Output current VOUT = 1.8 V VOUT = 1.2 V Pulse width = 1 ms VIN = 5.5V VIN = 2.2V Output voltage Output voltage VOUT (V) VOUT (V) Pulse width = 1 ms VIN = 5.5V VIN = 2.8V Output current IOUT (mA) Output current IOUT (mA) VOUT = 3.0 V VOUT = 2.5 V VOUT (V) Pulse width = 1 ms VIN = 5.5V VIN = 3.5V Output voltage Output voltage VOUT (V) Pulse width = 1 ms VIN = 4.0V Output current IOUT (mA) Output current IOUT (mA) 8) VIN = 5.5V Ripple rejection ratio vs. Frequency VOUT = 3.0 V (dB) VIN = 2.2 V ,Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C Ripple rejection ratio Ripple rejection ratio (dB) VOUT = 1.2 V Frequency f (Hz) Frequency f (Hz) © 2017-2019 Toshiba Electronic Devices & Storage Corporation VIN = 4.0 V, Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C 12 2019-06-20 TCR2EF series, TCR2EE series 9) Control Transient Response VIN = 2.2 V, CIN = 0.1 μF, COUT = 1 μF 2.0 1.0 0 IOUT = 1mA 2.0 1.0 0 IOUT = 50mA IOUT = 150mA Time Control voltage VCT (V) VOUT = 1.8 V Output voltage VOUT (V) Output voltage VOUT (V) Control voltage VCT (V) VOUT = 1.2 V 2.0 1.0 0 1.0 0 t (25 μs/div) IOUT = 1mA Output voltage VOUT (V) IOUT = 50mA 0 IOUT = 150mA Time Control voltage VCT (V) 0 1.0 IOUT = 150mA Time Output voltage VOUT (V) Control voltage VCT (V) 1.0 2.0 IOUT = 50mA t (25 μs/div) VOUT = 3.0 V VIN = 3.5 V, CIN = 0.1 μF, COUT = 1 μF 3.0 IOUT = 1mA 2.0 VOUT = 2.5 V 2.0 VIN = 2.8 V, CIN = 0.1 μF, COUT = 1 μF t (25 μs/div) © 2017-2019 Toshiba Electronic Devices & Storage Corporation VIN = 4.0 V, CIN = 0.1 μF, COUT = 1 μF 2.0 1.0 0 IOUT = 1mA 3.0 2.0 1.0 0 IOUT = 50mA IOUT = 150mA Time 13 t (25 μs/div) 2019-06-20 TCR2EF series, TCR2EE series 10) Control Transient Response 400 200 0 Output current IOUT (mA) VIN = 2.2 V, CIN = 0.1 μF, COUT = 1 μF VOUT = 1.8 V (IOUT = 1 mA ⇔ 150 mA) Output voltage ⊿VOUT (V) Output voltage ⊿VOUT (V) Output current IOUT (mA) VOUT = 1.2 V (IOUT = 1 mA ⇔ 150 mA) 1.3 1.2 1.1 Time 400 200 0 1.9 1.8 1.7 t (25 μs/div) Time 200 0 Output current IOUT (mA) 400 2.6 2.5 2.4 Time t (25 μs/div) VOUT = 3.0 V (IOUT = 1 mA ⇔ 150 mA) Output voltage ⊿VOUT (V) Output voltage ⊿VOUT (V) Output current IOUT (mA) VOUT = 2.5 V (IOUT = 1 mA ⇔ 150 mA) VIN = 3.5 V, CIN = 0.1 μF, COUT = 1 μF VIN = 2.8 V, CIN = 0.1 μF, COUT = 1 μF t (25 μs/div) VIN = 4.0 V, CIN = 0.1 μF, COUT = 1 μF 400 200 0 3.1 3.0 2.9 Time t (25 μs/div) (Note) The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2017-2019 Toshiba Electronic Devices & Storage Corporation 14 2019-06-20 TCR2EF series, TCR2EE series Package Dimensions SMV (SOT-25)(SC-74A) Unit: mm Weight : 16 mg (typ.) © 2017-2019 Toshiba Electronic Devices & Storage Corporation 15 2019-06-20 TCR2EF series, TCR2EE series Package Dimensions ESV (SOT-553) Unit: mm Weight: 3.0 mg (typ.) © 2017-2019 Toshiba Electronic Devices & Storage Corporation 16 2019-06-20 TCR2EF series, TCR2EE series RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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