TCR2EN125,LF

TCR2EN series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EN series 200 mA CMOS Low Dropout Regulator in ultra small package The TCR2EN series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low quiescent bias current and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 3.6 V and capable of driving up to 200 mA. They feature overcurrent protection and an Auto-discharge function. The TCR2EN series is offered in the ultra small plastic mold package SDFN4/SDFN4E (0.8 mm x 0.8 mm x 0.38 mm). It has a low dropout voltage of 160 mV (2.5 V output, IOUT = 150 mA) with low output noise voltage of 35 Vrms (2.5 V output) and a load transient response of only ⊿VOUT = ±55 mV (IOUT = 1 mA⇔150 mA, COUT = 1.0 F). As small ceramic input and output capacitors can be used with the TCR2EN series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. BOTTOM VIEW ILLUSTRATION SDFN4/SDFN4E Weight: 0.6 mg (typ.) Features  Low Dropout voltage VDO = 160 mV (typ.) at 2.5 V-output, IOUT = 150 mA VDO = 210 mV (typ.) at 1.8 V-output, IOUT = 150 mA VDO = 360 mV (typ.) at 1.2 V-output, IOUT = 150 mA VDO = 490 mV (typ.) at 1.0 V-output, IOUT = 150 mA  Low output noise voltage VNO = 35 Vrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz VNO = 30 Vrms (typ.) at 1.8 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz VNO = 23 Vrms (typ.) at 1.2 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz VNO = 18 Vrms (typ.) at 1.0 V-output, IOUT = 10 mA, 10 Hz < f < 100 kHz  Fast load transient response (⊿VOUT = ±55 mV (typ.) at IOUT = 1 mA ⇔ 150 mA, COUT =1.0 F)  Low quiescent bias current (IB = 35 A (typ.) at IOUT = 0 mA)  High ripple rejection (R.R = 73 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f = 1 kHz)  Wide range Output Voltage line up (VOUT = 1.0 to 3.6 V)  High VOUT accuracy ±1.0% (1.8 V ≤ VOUT)  Overcurrent protection  Auto-discharge  Pull down connection between CONTROL and GND  Ceramic capacitors can be used (CIN = 0.1F, COUT =1.0 F)  Ultra Small package SDFN4/SDFN4E (0.8 mm x 0.8 mm x 0.38 mm) Start of commercial production 2013-11 © 2021 Toshiba Electronic Devices & Storage Corporation 1 2021-08-31 TCR2EN series Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 V Output current IOUT 200 mA Power dissipation PD 300 Operating temperature range Topr 40 to 85 °C Tj 150 °C Tstg 55 to 150 °C Junction temperature Storage temperature range (Note1) mW Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40 mm x 40 mm x 1.6 mm, both sides of board. Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole hall: diameter 0.5 mm x 24 Pin Assignment (top view) VIN CONTROL 4 3 * 1 2 VOUT GND *Center electrode should be connected to GND or Open © 2021 Toshiba Electronic Devices & Storage Corporation 2 2021-08-31 TCR2EN series List of Products Number, Output voltage and Marking Product No. Output voltage(V) (typ.) Marking Product No. Output voltage(V) (typ.) Marking TCR2EN10 1.0 NJ TCR2EN27 2.7 NO TCR2EN105 1.05 NU TCR2EN28 2.8 NP TCR2EN11 1.1 N2 TCR2EN285 2.85 N7 TCR2EN115 1.15 NC TCR2EN29 2.9 NR TCR2EN12 1.2 N3 TCR2EN30 3.0 NS TCR2EN125 1.25 NQ TCR2EN31 3.1 NT TCR2EN13 1.3 N4 TCR2EN32 3.2 NV TCR2EN15 1.5 NA TCR2EN33 3.3 NW TCR2EN18 1.8 NE TCR2EN34 3.4 NX TCR2EN19 1.9 NF TCR2EN35 3.5 NY TCR2EN21 2.1 NH TCR2EN36 3.6 NZ TCR2EN25 2.5 NM Please ask your local retailer about the devices with other output voltages. Marking (top view) Example: TCR2EN33 (3.3 V output) NW Lot. No. INDEX © 2021 Toshiba Electronic Devices & Storage Corporation 3 2021-08-31 TCR2EN series Electrical Characteristics (Unless otherwise specified, VIN = VOUT  1 V, IOUT = 50 mA, CIN = 0.1 F, COUT = 1.0 F, Tj = 25°C) Characteristics Output voltage accuracy Input voltage Symbol VOUT VIN Test Condition Min Typ. Max Unit VOUT < 1.8 V -18  +18 mV 1.8 V ≤ VOUT -1.0  +1.0 % IOUT 1 mA 1.5  5.5 V VOUT  0.5 V ≤ VIN ≤ 5.5 V, IOUT  1 mA IOUT 50 mA (Note2) Line regulation Reg･line  1 15 mV Load regulation Reg･load 1 mA ≤ IOUT ≤ 150 mA  15 30 mV IOUT 0 mA  35 60 A VCT  0 V  0.1 1.0 A  160 210 mV Quiescent current IB Stand-by current IB (OFF) Dropout voltage VDO IOUT 150 mA Temperature coefficient TCVO 40°C ≤ Topr ≤ 85 °C  75  ppm/°C Output noise voltage VNO VIN  VOUT  1 V, IOUT  10 mA, 10 Hz ≤ f ≤ 100 kHz, Ta  25 °C (Note 3)  35  Vrms Ripple rejection ratio R.R. VIN  VOUT  1 V, IOUT  10 mA, f  1 kHz, VRipple  500 mVp-p, Ta  25 °C (Note 3)  73  dB (Note 3) Load transient response ⊿VOUT  ±55  mV Control voltage (ON) VCT (ON)  1.0  5.5 V Control voltage (OFF) VCT (OFF)  0  0.4 V Note 2: Stable state with fixed IOUT condition Note 3: The 2.5 V output product IOUT 1mA⇔150mA, COUT = 1.0 F Dropout voltage for different output voltages (IOUT = 150 mA, CIN = 0.1 F, COUT = 1.0 F, Tj = 25°C) Output voltages Min Typ. Max 1.0 V, 1.05 V  490 750 1.1 V, 1.15 V  420 650 1.2 V, 1.25 V  360 550 1.3 V  330 450  290 400 1.5 V ≤ VOUT < 1.8 V  270 370 1.8 V ≤ VOUT < 2.5 V  210 290 2.5 V ≤ VOUT < 3.0 V  160 210 3.0 V ≤ VOUT ≤ 3.6 V  130 180 1.4 V Symbol VDO © 2021 Toshiba Electronic Devices & Storage Corporation 4 Unit mV 2021-08-31 TCR2EN series Application Note 1. Example of Application Circuit CONTROL GND VOUT VIN 0.1 μF 0.1 μF CONTROL voltage Output voltage HIGH ON LOW OFF OPEN OFF The figure above shows the example of configuration for using a Low-Dropout regulator. Insert a capacitor at VOUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used.) 2. Power Dissipation Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy(FR4) Board dimension: 40 mm x 40 mm (both sides of board)，t = 1.6 mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5 mm x 24 Power dissipation PD (mW) 400 300 200 100 0 −40 0 40 80 120 Ambient temperature Ta (°C) © 2021 Toshiba Electronic Devices & Storage Corporation 5 2021-08-31 TCR2EN series Attention in Use ● Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommends the ESR of ceramic capacitor is under 10 Ω. ● Mounting The long distance between IC and output capacitor might affect phase compensation by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need to be large and make the wire impedance small as possible. ● Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of ambient temperature, input voltage, output current, etc., we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 percent. ● Overcurrent Protection Circuit Overcurrent protection circuit is designed in these products, but this does not assure for the suppression of uprising device operation. If output pins and GND pins are shorted out, these products might be break down. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design. © 2021 Toshiba Electronic Devices & Storage Corporation 6 2021-08-31 TCR2EN series Representative Typical Characteristics 1) Output Voltage vs. Input Voltage VOUT = 1.8 V CIN  0.1 F, COUT  1 F Output voltage VOUT (V) Output voltage VOUT (V) VOUT = 1.2 V IOUT = 1 mA IOUT = 50 mA IOUT = 150 mA Input voltage VIN (V) IOUT = 150 mA VIN (V) CIN  0.1 F, COUT  1 F Output voltage VOUT (V) Output voltage VOUT (V) IOUT = 50 mA VOUT = 3.0 V CIN  0.1 F, COUT  1 F IOUT = 1 mA IOUT = 50 mA IOUT = 150 mA VIN IOUT = 1 mA Input voltage VOUT = 2.5 V Input voltage CIN  0.1 F, COUT  1 F (V) IOUT = 1 mA IOUT = 50 mA IOUT = 150 mA Input voltage VIN (V) 2) Output Voltage vs. Output Current VOUT = 1.8 V VIN = 2.2 V, VIN = 2.8 V, CIN = 0.1 F, COUT = 1 F CIN = 0.1 F, COUT = 1 F Output current Output voltage VOUT (V) Output voltage VOUT (V) VOUT = 1.2 V IOUT (mA) © 2021 Toshiba Electronic Devices & Storage Corporation Output current 7 IOUT (mA) 2021-08-31 TCR2EN series VOUT = 3.0 V VIN = 3.5 V, VIN = 4.0 V, CIN = 0.1 F, COUT = 1 F CIN = 0.1 F, COUT = 1 F Output current Output voltage VOUT (V) Output voltage VOUT (V) VOUT = 2.5 V Output current IOUT (mA) IOUT (mA) VOUT = 1.2 V VOUT = 1.8 V VIN = 2.2 V, VIN = 2.8 V, CIN = 0.1 F, COUT = 1 F CIN = 0.1 F, COUT = 1 F Output voltage VOUT (V) Output voltage VOUT (V) 3) Output Voltage vs. Ambient Temperature IOUT = 50 mA Ambient temperature Ta (°C) Ambient temperature Ta (°C) VOUT = 2.5 V VOUT = 3.0 V VIN = 3.5 V, VIN = 4.0 V, CIN = 0.1 F, COUT = 1 F CIN = 0.1 F, COUT = 1 F Output voltage VOUT (V) Output voltage VOUT (V) IOUT = 50 mA IOUT = 50 mA Ambient temperature Ta (°C) Ambient temperature Ta (°C) © 2021 Toshiba Electronic Devices & Storage Corporation IOUT = 50 mA 8 2021-08-31 TCR2EN series 4) Dropout Voltage vs. Output Current VOUT = 1.8 V VOUT = 1.2 V CIN  0.1 F, COUT  1 F Dropout voltage VDO (mV) Dropout voltage VDO (mV) CIN  0.1 F, COUT  1 F Output current IOUT (mA) Output current VOUT = 2.5 V IOUT (mA) VOUT = 3.0 V CIN  0.1 F, COUT  1 F Dropout voltage VDO (mV) Dropout voltage VDO (mV) CIN  0.1 F, COUT  1 F Output current IOUT (mA) Output current IOUT (mA) 5) Quiescent Current vs. Input Voltage VOUT = 1.8 V CIN  0.1 F, COUT  1 F IOUT 0 mA Input voltage VIN © 2021 Toshiba Electronic Devices & Storage Corporation Quiescent current IB (μA) Quiescent current IB (μA) VOUT = 1.2 V (V) CIN  0.1 F, COUT  1 F IOUT 0 mA Input voltage 9 VIN (V) 2021-08-31 TCR2EN series CIN  0.1 F, COUT  1 F IOUT 0 mA Input voltage 6) VOUT = 3.0 V VIN Quiescent current IB (μA) Quiescent current IB (μA) VOUT = 2.5 V (V) CIN  0.1 F, COUT  1 F IOUT 0 mA Input voltage VIN (V) Quiescent Current vs. Ambient Temperature VOUT = 1.8 V VIN  2.8V CIN  0.1 F, COUT  1 F IOUT 0 mA Quiescent current IB (μA) VIN  2.2 V CIN  0.1 F, COUT  1 F IOUT 0 mA Ambient temperature Ta (°C) Ambient temperature Ta (°C) VOUT = 2.5 V VOUT = 3.0 V VIN  3.5 V CIN  0.1 F, COUT  1 F IOUT 0 mA Quiescent current IB (μA) Quiescent current IB (μA) Quiescent current IB (μA) VOUT = 1.2 V Ambient temperature Ta (°C) © 2021 Toshiba Electronic Devices & Storage Corporation VIN  4.0V CIN  0.1 F, COUT  1 F IOUT 0 mA Ambient temperature Ta (°C) 10 2021-08-31 TCR2EN series 7) Output Voltage vs. Output Current VOUT = 1.2V VOUT = 1.8V Pulse width  1 ms Output voltage VOUT (V) Output voltage VOUT (V) Pulse width  1 ms VIN = 5.5 V VIN = 2.2 V Output current Pulse width  1 ms Output voltage VOUT (V) Pulse width  1 ms Output voltage VOUT (V) IOUT (mA) VOUT = 3.0 V VOUT = 2.5 V 8) VIN = 2.8 V Output current IOUT (mA) VIN = 5.5 V VIN = 3.5 V Output current VIN = 5.5 V VIN = 5.5 V VIN = 4.0 V Output current IOUT (mA) IOUT (mA) Ripple Rejection Ratio vs. Frequency VOUT = 3.0 V Ripple rejection Ripple rejection (dB) (dB) VOUT = 1.2 V VIN  2.2 V ,Vripple  500 mVpp CIN  none, COUT  1 F IOUT  10 mA, Ta  25 °C Frequency f (Hz) Frequency f (Hz) © 2021 Toshiba Electronic Devices & Storage Corporation VIN  4.0 V ,Vripple  500 mVpp CIN  none, COUT  1 F IOUT  10 mA, Ta  25 °C 11 2021-08-31 TCR2EN series 9) Control Transient Response VOUT = 1.8 V Control voltage VCT (V) 2.0 VIN  2.2 V, CIN  0.1 F, COUT  1 F 1.0 0 Output voltage VOUT (V) Output voltage VOUT (V) Control voltage VCT (V) VOUT = 1.2 V IOUT = 1 mA 2.0 1.0 0 IOUT = 50 mA IOUT = 150 mA 2.0 1.0 0 1.0 0 Output voltage VOUT (V) Control voltage VCT (V) 0 IOUT = 1 mA Output voltage VOUT (V) Control voltage VCT (V) VIN  3.5 V, CIN  0.1 F, COUT  1 F 1.0 2.0 1.0 0 IOUT = 50 mA IOUT = 150 mA Time t (25 s/div) © 2021 Toshiba Electronic Devices & Storage Corporation IOUT = 50 mA IOUT = 150 mA Time t (25 s/div) VOUT = 2.5 V 3.0 IOUT = 1 mA 2.0 Time t (25 s/div) 2.0 VIN  2.8 V, CIN  0.1 F, COUT  1 F VOUT = 3.0 V 2.0 VIN  4.0 V, CIN  0.1 F, COUT  1 F 1.0 0 IOUT = 1 mA 3.0 2.0 1.0 IOUT = 50 mA 0 IOUT = 150 mA Time t (25 s/div) 12 2021-08-31 TCR2EN series 10) Load Transient Response Output current IOUT (mA) 400 VOUT = 1.8 V (IOUT = 1mA ⇔ 150mA) VIN  2.2 V, CIN  0.1 F, COUT  1 F 200 Output voltage ⊿VOUT (V) 0 1.3 1.2 1.1 200 0 1.9 1.8 1.7 Time t (25 s/div) VOUT = 2.5 V (IOUT = 1mA ⇔ 150mA) VOUT = 3.0 V (IOUT = 1mA ⇔ 150mA) VIN  3.5 V, CIN  0.1 F, COUT  1 F Output current IOUT (mA) 400 400 VIN  2.8 V, CIN  0.1 F, COUT  1 F Time t (25 s/div) 200 0 Output voltage ⊿VOUT (V) Output voltage ⊿VOUT (V) Output current IOUT (mA) Output voltage ⊿VOUT (V) Output current IOUT (mA) VOUT = 1.2 V (IOUT = 1mA ⇔ 150mA) 2.6 2.5 2.4 Time t (25 s/div) 400 VIN  4.0 V, CIN  0.1 F, COUT  1 F 200 0 3.1 3.0 2.9 Time t (25 s/div) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2021 Toshiba Electronic Devices & Storage Corporation 13 2021-08-31 TCR2EN series Package Dimensions SDFN4 Unit: mm 0.04 mm (typ.) unevenness exists along the edges of the back electrode to increase shear after soldering. Weight : 0.6 mg ( typ.) © 2021 Toshiba Electronic Devices & Storage Corporation 14 2021-08-31 TCR2EN series Package Dimensions SDFN4E Unit: mm Weight : 0.6 mg ( typ.) © 2021 Toshiba Electronic Devices & Storage Corporation 15 2021-08-31 TCR2EN series RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”.  TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.  This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.  Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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