TCR2LN18,LF

TCR2LN series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2LN series Ultra low quiescent current 200 mA CMOS Low Dropout Regulator in ultra small package The TCR2LN series are CMOS general purpose single output voltage regulators with an on/off control input, featuring ultra low quiescent bias current and low dropout voltage. These voltage regulators are available in fixed output voltages between 0.8 V and 3.6 V and capable of driving up to 200 mA. They feature overcurrent protection and auto-discharge option. The TCR2LN series is offered in the ultra small plastic mold package SDFN4/SDFN4E (0.8 mm x 0.8 mm x 0.38 mm) and has a low dropout voltage of 250 mV (2.5 V output, IOUT = 150 mA). As small ceramic input and output capacitors 0.1 μF can be used with the TCR2LN series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. SDFN4/SDFN4E Weight : 0.6 mg ( typ.) Features  Low quiescent bias current (IB = 2 μA (max) at IOUT = 0 mA, Tj = -40 to 85 °C)  Low dropout voltage VDO = 250 mV (typ.) at 2.5 V-output, IOUT = 150 mA  Wide range output voltage line up (VOUT = 0.8 to 3.6 V)  High VOUT accuracy ±1.0 % (1.8 V ≤ VOUT)  Overcurrent protection  Auto-discharge  Pull down connection between CONTROL and GND  Ceramic capacitors can be used (CIN = 0.1 μF, COUT = 0.1 μF)  Ultra small package SDFN4 (0.8 mm x 0.8 mm x 0.38 mm) Start of commercial production 2014-08 © 2021 Toshiba Electronic Devices & Storage Corporation 1 2021-08-31 TCR2LN series Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 V Output current IOUT 200 mA Power dissipation PD 300 Operating temperature range Topr −40 to 85 °C Tj 150 °C Tstg −55 to 150 °C Junction temperature Storage temperature range (Note1) mW Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy (FR4) board dimension: 40 mm x 40 mm (both sides of board)，t = 1.6 mm Metal pattern ratio: a surface approximately 50 %, the reverse side approximately 50 % Through hole hall: diameter 0.5 mm x 24 Pin Assignment (top view) VIN CONTROL 4 3 * 1 2 VOUT GND *Center electrode should be connected to GND or Open © 2021 Toshiba Electronic Devices & Storage Corporation 2 2021-08-31 TCR2LN series List of Products Number, Output voltage and Marking Output Auto discharge type Product No. Output voltage(V) Marking Product No. Output voltage(V) Marking TCR2LN08 0.8 L8 TCR2LN19 1.9 LF TCR2LN085 0.85 KS TCR2LN20 2.0 LG TCR2LN09 0.9 L9 TCR2LN21 2.1 LH TCR2LN095 0.95 KT TCR2LN25 2.5 LM TCR2LN10 1.0 LJ TCR2LN27 2.7 LO TCR2LN105 1.05 LU TCR2LN28 2.8 LP TCR2LN11 1.1 L2 TCR2LN285 2.85 L7 TCR2LN115 1.15 LC TCR2LN30 3.0 LS TCR2LN12 1.2 L3 TCR2LN31 3.1 LT TCR2LN13 1.3 L4 TCR2LN32 3.2 LV TCR2LN15 1.5 LA TCR2LN33 3.3 LW TCR2LN18 1.8 LE TCR2LN36 3.6 LZ * Please contact local Toshiba representative if you are interested in product that output voltage is not in the list. Top Marking Example: TCR2LN33 (3.3 V output) L W Lot NO INDEX © 2021 Toshiba Electronic Devices & Storage Corporation 3 2021-08-31 TCR2LN series Electrical Characteristics (Unless otherwise specified, VIN = VOUT+1 V (VOUT > 1.5 V), VIN = 2.5 V (VOUT ≤ 1.5 V), IOUT = 50 mA, CIN = 0.1 μF, COUT = 0.1 μF) Tj = 25°C Characteristics Symbol Output voltage Input voltage Tj = -40 to 85°C Test Condition Unit Min Typ. Max Min Max VOUT < 1.8 V -18 ― +18 ― ― mV 1.8V ≤ VOUT -1.0 ― +1.0 ― ― % VOUT IOUT = 50 mA (Note 2) VIN IOUT = 1 mA 1.5 ― 5.5 1.5 5.5 V Line regulation Reg･line VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 1 mA ― 1 15 ― ― mV Load regulation Reg･load 1 mA ≤ IOUT ≤ 150 mA ― 15 30 ― ― mV IOUT = 0 mA ― 1.0 ― ― 2.0 μA ― 0.1 ― ― 1.0 μA ― 0.1 ― ― ― μA VOUT = 1.8 V ― 350 ― ― 600 mV VOUT = 3.0 V ― 200 ― ― 280 mV ― 75 ― ― ― ppm/°C Quiescent current IB Stand-by current IB (OFF) (Note 3) VCT = 0 V ― Control pull down current ICT Dropout voltage VDO IOUT = 150 mA Temperature coefficient TCVO −40°C ≤ Topr ≤ 85°C Control voltage (ON) VCT (ON) ― 1.0 ― 5.5 1.0 5.5 V Control voltage (OFF) VCT (OFF) ― 0 ― 0.4 0 0.4 V RSD ― ― 20 ― ― ― Ω Discharge on resistance Note 2: Note 3: Stable state with fixed IOUT condition Except Control pull down current Dropout voltage (IOUT = 150 mA, CIN = 0.1 μF, COUT = 0.1 μF, Tj = 25°C) Output voltages Symbol Min Typ. Max(Note 4) 0.8 V ≤ VOUT < 0.9 V ― 1000 1560 0.9 V ≤ VOUT < 1.0 V ― ― ― ― 920 1460 840 1380 760 1280 680 1230 600 1110 450 840 350 600 300 540 250 360 200 280 1.0 V ≤ VOUT < 1.1 V 1.1 V ≤ VOUT < 1.2 V 1.2 V ≤ VOUT < 1.3 V 1.3 V ≤ VOUT < 1.6 V VDO 1.6 V ≤ VOUT < 1.8 V 1.8 V ≤ VOUT < 2.0 V 2.0 V ≤ VOUT < 2.5 V 2.5 V ≤ VOUT < 3.0 V 3.0 V ≤ VOUT ≤ 3.6 V Note 4: ― ― ― ― ― ― Unit mV Tj = -40 to 85°C © 2021 Toshiba Electronic Devices & Storage Corporation 4 2021-08-31 TCR2LN series Application Note 1. Example of Application Circuit CONTROL GND VOUT VIN 0.1 μF 0.1 μF CONTROL voltage Output voltage HIGH ON LOW OFF OPEN OFF The figure above shows the example of configuration for using a Low dropout regulator. Insert a capacitor at VOUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used.) 2. Power Dissipation Board mounted power dissipation ratings are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy(FR4) Board dimension: 40 mm x 40 mm (both sides of board)，t = 1.6 mm Metal pattern ratio: a surface approximately 50 %, the reverse side approximately 50 % Through hole: diameter 0.5 mm x 24 Power dissipation PD (mW) 400 300 200 100 0 −40 0 40 80 120 Ambient temperature Ta (°C) © 2021 Toshiba Electronic Devices & Storage Corporation 5 2021-08-31 TCR2LN series Attention in Use ● Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommends the ESR of ceramic capacitor is under 10 Ω. ● Mounting The long distance between IC and output capacitor might affect phase compensation by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also V IN and GND pattern need to be large and make the wire impedance small as possible. ● Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of ambient temperature, input voltage, output current etc., we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 %. ● Overcurrent Protection Overcurrent protection is designed in these products, but this does not assure for the suppression of uprising device operation. If output pins and GND pins are shorted out, these products might break down. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design. © 2021 Toshiba Electronic Devices & Storage Corporation 6 2021-08-31 TCR2LN series Representative Typical Characteristics 1) Output voltage vs. Input voltage VOUT = 1.8 V VOUT = 0.8 V CIN = 0.1 μF, COUT = 0.1 μF Output voltage VOUT (V) Output voltage VOUT (V) CIN = 0.1 μF, COUT = 0.1 μF IOUT = 1mA IOUT = 100mA IOUT = 1mA IOUT = 100mA IOUT = 150mA IOUT = 150mA Input voltage VIN Input voltage (V) VIN (V) VOUT = 3.6 V Output voltage VOUT (V) CIN = 0.1 μF, COUT = 0.1 μF IOUT = 1mA IOUT = 100mA IOUT = 150mA Input voltage (V) Quiescent current vs. Input voltage VOUT = 1.8 V CIN = 0.1 μF, COUT = 0.1 μF CIN = 0.1 μF, COUT = 0.1 μF (μA) VOUT = 0.8 V IOUT = 0 mA Quiescent current IB IOUT = 0 mA Quiescent current IB (μA) 2) VIN Input voltage VIN © 2021 Toshiba Electronic Devices & Storage Corporation Input voltage (V) 7 VIN (V) 2021-08-31 TCR2LN series VOUT = 3.6 V IOUT = 0 mA Quiescent current IB (μA) CIN = 0.1 μF, COUT = 0.1 μF Input voltage (V) Output voltage vs. Output current VOUT = 1.8 V VIN = 2.5 V, VIN = 2.8 V, CIN = 0.1 μF, COUT = 0.1 μF CIN = 0.1 μF, COUT = 0.1 μF Output voltage VOUT (V) VOUT = 0.8 V Output voltage VOUT (V) 3) VIN Output current IOUT (mA) Output current IOUT (mA) VOUT = 3.6 V Output voltage VOUT (V) VIN = 4.6 V, CIN = 0.1 μF, COUT = 0.1 μF Output current IOUT (mA) © 2021 Toshiba Electronic Devices & Storage Corporation 8 2021-08-31 TCR2LN series 4) Output voltage vs. Ambient temperature VOUT = 1.8 V VIN = 2.5 V, CIN = 0.1 μF, COUT = 0.1 μF IOUT = 50 mA Output voltage VOUT (V) Output voltage VOUT (V) VOUT = 0.8 V VIN = 2.8 V, CIN = 0.1 μF, COUT = 0.1 μF IOUT = 50 mA Ambient temperature Ta (°C) Ambient temperature Ta (°C) Output voltage VOUT (V) VOUT = 3.6 V VIN = 4.6 V, CIN = 0.1 μF, COUT = 0.1 μF IOUT = 50 mA Ambient temperature Ta (°C) 5) Dropout voltage vs. Output current VOUT = 1.8 V CIN = 0.1 μF, COUT = 0.1 μF CIN = 0.1 μF, COUT = 0.1 μF Dropout voltage VDO (mV) Dropout voltage VIN - VOUT (mV) VOUT = 0.8 V Output Current Output current IOUT (mA) IOUT (mA) © 2021 Toshiba Electronic Devices & Storage Corporation 9 2021-08-31 TCR2LN series VOUT = 3.6 V Dropout voltage VDO (mV) CIN = 0.1 μF, COUT = 0.1 μF Output current IOUT (mA) 6) Quiescent current vs. Ambient temperature VOUT = 1.8 V (μA) VIN = 2.8 V, CIN = 0.1 μF, COUT = 0.1 μF IOUT = 0 mA Quiescent current IB VIN = 2.5 V, CIN = 0.1 μF, COUT = 0.1 μF IOUT = 0 mA Quiescent current IB (μA) VOUT = 0.8 V Ambient temperature Ta (°C) Ambient temperature Ta (°C) VIN = 4.6 V, CIN = 0.1 μF, COUT = 0.1 μF IOUT = 0 mA Quiescent current IB (μA) VOUT = 3.6 V Ambient temperature Ta (°C) © 2021 Toshiba Electronic Devices & Storage Corporation 10 2021-08-31 TCR2LN series 7) Ripple rejection ratio vs. Frequency (dB) VOUT = 1.8 V VIN = 2.8 V, CIN = none, COUT = 0.1 μF IOUT = 10 mA Ripple rejection ratio VIN = 2.5 V, CIN = none, COUT = 0.1 μF IOUT = 10 mA Ripple rejection ratio (dB) VOUT = 0.8 V Frequency f (Hz) Frequency f (Hz) VIN = 4.6 V, CIN = none, COUT = 0.1 μF IOUT = 10 mA Ripple rejection ratio (dB) VOUT = 3.6 V Frequency f (Hz) 8) Output voltage vs. Output current VOUT = 1.8 V Output voltage VOUT (V) Output voltage VOUT (V) VOUT = 0.8 V Output current IOUT (mA) © 2021 Toshiba Electronic Devices & Storage Corporation Output current IOUT (mA) 11 2021-08-31 TCR2LN series Output voltage VOUT (V) VOUT = 3.6 V Output current 9) IOUT (mA) Control Transient vs. Response 1.0 0 IOUT = 1 mA 1.0 0.5 0 IOUT = 150 mA Time 2.0 VCT (V) VIN = 2.5 V, CIN = 0.1 μF, COUT = 0.1 μF Control voltage 2.0 VOUT = 1.8 V Output voltage VOUT (V) Output voltage VOUT (V) Control voltage VCT (V) VOUT = 0.8 V t (100 μs/div) VIN = 2.8 V, CIN = 0.1 μF, COUT = 0.1 μF 1.0 0 IOUT = 1 mA 2.0 1.0 0 IOUT = 150 mA Time t (100 μs/div) Output voltage VOUT (V) Control voltage VCT (V) VOUT = 3.6 V 2.0 VIN = 4.6 V, CIN = 0.1 μF, COUT = 0.1 μF 1.0 0 IOUT = 1 mA 4.0 2.0 0 IOUT = 150 mA Time t (100 μs/div) © 2021 Toshiba Electronic Devices & Storage Corporation 12 2021-08-31 TCR2LN series 10) Load Transient Response VOUT = 1.8 V (IOUT = 50 mA ⇔ 100 mA) 50 IOUT (mA) 100 Output current VIN = 2.5 V, CIN = 0.1 μF, COUT = 0.1 μF 150 1.3 0.8 0.3 Time VOUT (V) Output voltage VOUT (V) Output voltage Output current IOUT (mA) VOUT = 0.8 V (IOUT = 50 mA ⇔ 100 mA) 100 50 2.3 1.8 1.3 t (100 μs/div) Time 50 4.1 3.6 3.1 VOUT (V) 100 IOUT (mA) Output current VIN = 4.6 V, CIN = 0.1 μF, COUT = 0.1 μF Time 10 0 1.3 0.8 0.3 Time t (100 μs/div) VOUT = 3.6 V (IOUT = 1 mA ⇔ 10 mA) 2.3 1.8 1.3 Time IOUT (mA) VIN = 4.6 V, CIN = 0.1 μF, COUT = 0.1 μF 20 10 0 4.1 3.6 3.1 Time t (100 μs/div) © 2021 Toshiba Electronic Devices & Storage Corporation VOUT (V) 0 Output current 10 Output voltage IOUT (mA) VOUT (V) Output voltage Output current VOUT = 1.8 V (IOUT = 1 mA ⇔ 10 mA) 20 VIN = 2.5 V, CIN = 0.1 μF, COUT = 0.1 μF 20 t (100 μs/div) VIN = 2.8 V, CIN = 0.1 μF, COUT = 0.1 μF t (100 μs/div) VOUT = 0.8 V (IOUT = 1 mA ⇔ 10 mA) Output voltage VOUT (V) Output voltage IOUT (mA) Output current VOUT = 3.6 V (IOUT = 50 mA ⇔ 100 mA) 150 = 2.8 VINV=IN 2.8 V, V, = 0.1 COUT = 0.1 IN 0.1 CINC= μF,μF, COUT = 0.1 μFμF 150 13 t (100 μs/div) 2021-08-31 TCR2LN series Package Dimensions SDFN4 Unit: mm 0.04 mm (typ.) unevenness exists along the edges of the back electrode to increase shear after soldering. Weight : 0.6 mg ( typ.) © 2021 Toshiba Electronic Devices & Storage Corporation 14 2021-08-31 TCR2LN series Package Dimensions SDFN4E Unit: mm Weight : 0.6 mg ( typ.) © 2021 Toshiba Electronic Devices & Storage Corporation 15 2021-08-31 TCR2LN series RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”.  TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.  This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.  Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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