TCR3DG12,LF

TCR3DG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3DG series 300 mA CMOS Low Dropout Regulator with inrush current protection circuit Description The TCR3DG series are CMOS general purpose single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving up to 300 mA. They feature overcurrent protection, thermal shutdown, Inrush current reduction and Auto-discharge. The TCR3DG series are offered in the ultra small package WCSP4E WCSP4E (0.645 mm x 0.645 mm; t 0.40 mm). It has a low dropout voltage of 160 mV (3.2 V output, IOUT = 300 mA) with low output noise voltage of 38 μVrms (2.5 Weight : 0.34 mg (Typ.) V output) and a load transient response of only ⊿VOUT = ±80 mV (IOUT = 1 mA⇔300 mA, COUT = 1.0 μF). As small ceramic input and output capacitors can be used with the TCR3DG series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. Applications Power IC developed for portable applications, IoT equipment and wearable devices Features • Low Dropout voltage VDO = 160 mV (Typ.) at 3.2 V output, IOUT = 300 mA • Low output noise voltage VNO = 38 μVrms (Typ.) at 2.5 V output, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz • Fast load transient response (⊿VOUT = ±80 mV (Typ.) at IOUT = 1 ⇔ 300 mA, COUT = 1.0 μF) • High ripple rejection ratio (70 dB (Typ.) at 2.5 V output, IOUT = 10 mA, f = 1 kHz) • Overcurrent protection • Thermal shutdown • Inrush current reduction • Auto-discharge • Pull down connection between CONTROL and GND • Ceramic capacitors can be used (CIN = 1.0 μF, COUT = 1.0 μF) • Ultra small package WCSP4E (0.645 mm x 0.645 mm ; t 0.40 mm) Start of commercial production 2016-03 © 2016-2022 Toshiba Electronic Devices & Storage Corporation 1 2022-11-18 Rev.2.0 TCR3DG series Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 V Power dissipation PD 800 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range Note: Note1: (Note1) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Rating at mounting on a board Board material: Glass epoxy (FR4) Board dimension: 340 mm x 40 mm (both sides of board), t = 1.6 mm Metal pattern ratio: a surface approximately 50 %, the reverse side approximately 50 % Through hole: diameter 0.5 mm x 24 Pin Assignment (top view) 1 2 A B 1 2 A VIN VOUT B CONTROL GND Operating Ranges Characteristics Symbol Rating Input voltage VIN Control voltage VCT Output voltage VOUT Output current IOUT Operation Temperature Topr -40 to 85 °C COUT ≥ 1.0 μF ― Output Capacitance Input Capacitance VOUT + 0.1 to 5.5 V Unit (Note 2) 0 to VIN V 1.0 to 4.5 DC 300 CIN ≥ 1.0 μF V V (Note 3) mA ― Note 2: IOUT = 1 mA. Please refer to Dropout Voltage (Page 4) and use it within Absolute Maximum Ratings Junction temperature and Operation Temperature Ranges. Note 3: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. © 2016-2022 Toshiba Electronic Devices & Storage Corporation 2 2022-11-18 Rev.2.0 TCR3DG series List of Products Number, Output voltage and Marking Product No. Output voltage Marking Product No. (V)(Typ.) Output voltage Marking (V)(Typ.) TCR3DG10 1.0 E TCR3DG285* 2.85 R TCR3DG11* 1.1 F TCR3DG30* 3.0 T TCR3DG12 1.2 H TCR3DG31* 3.1 U TCR3DG13* 1.3 J TCR3DG32 3.2 A TCR3DG135* 1.35 K TCR3DG33 3.3 B TCR3DG18* 1.8 L TCR3DG35* 3.5 V TCR3DG25* 2.5 P TCR3DG36* 3.6 C TCR3DG28* 2.8 W TCR3DG45* 4.5 D Please ask your local retailer about the devices with (*) or other output voltages. Top Marking (top view) Example: TCR3DG32 (3.2 V output) GND VOUT A VIN CONTROL © 2016-2022 Toshiba Electronic Devices & Storage Corporation 3 2022-11-18 Rev.2.0 TCR3DG series Electrical Characteristics (Unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1.0 μF, COUT = 1.0 μF, Ta = 25°C) Characteristics Output voltage accuracy Input voltage Symbol VOUT VIN Test Condition IOUT = 50 mA (Note 4) Max Unit VOUT < 1.8 V -18 ― +18 mV 1.8V ≤ VOUT -1.0 ― +1.0 % 1.75 ― 5.5 V VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 1 mA ― 1 15 mV ― 8 35 mV VOUT = 1.0 V ― 65 VOUT = 1.8 V ― ― ― 65 68 ― ― ― 78 125 ― 0.1 1 μA ― 195 275 mV ― 75 ― ppm/°C ― 38 ― μVrms ― 70 ― dB Reg･line Load regulation Reg･load 1 mA ≤ IOUT ≤ 300 mA IB Typ. IOUT = 300 mA Line regulation Quiescent current Min IOUT = 0 mA VOUT = 2.5 V VOUT = 4.5 V Stand-by current IB (OFF) Dropout voltage VDO IOUT = 300 mA Temperature coefficient TCVO −40°C ≤ Topr ≤ 85°C Output noise voltage VNO VIN = VOUT + 1 V, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz, (Note 5) Ripple rejection ratio R.R. VIN = VOUT + 1 V, IOUT = 10 mA, f = 1 kHz, VRipple = 500 mVp-p, (Note 5) Load transient response ⊿VOUT IOUT = 1⇔300mA, COUT = 1.0 μF ― ±80 ― mV Control voltage (ON) VCT (ON) ― 1.0 ― 5.5 V Control voltage (OFF) VCT (OFF) ― 0 ― 0.4 V Note 4: Note 5: VCT = 0 V μA (Note 5) Stable state with fixed IOUT condition. The 2.5 V output product. Dropout voltage table (IOUT = 300 mA, CIN = 1.0 μF, COUT = 1.0 μF, Ta = 25°C) Output voltages Min Typ. Max 1.0 V, 1.05 V ― 575 735 1.1 V ― 535 635 1.2 V ― 475 585 1.3 V ― 435 535 1.35V ― 395 515 1.4 V ― 375 505 ― 335 435 ― 255 365 2.1 V ≤ VOUT < 2.5 V ― 225 315 2.5 V ≤ VOUT < 2.8 V ― 195 275 2.8 V ≤ VOUT < 3.2 V ― 185 235 3.2 V ― 165 215 3.2 V ≤ VOUT < 3.6 V ― 165 215 3.6 V ≤ VOUT < = 4.5 V ― 135 185 1.5 V ≤ VOUT < 1.8 V 1.8 V ≤ VOUT < 2.1 V Symbol VDO © 2016-2022 Toshiba Electronic Devices & Storage Corporation 4 Unit mV 2022-11-18 Rev.2.0 TCR3DG series Application Note Example of Application Circuit VOUT VIN 1.0 μF 1.0 μF CONTROL GND CONTROL voltage Output voltage HIGH ON LOW OFF OPEN OFF The figure above shows the Example of configuration for using a Low dropout regulator. Insert a capacitor at VOUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used). Power Dissipation Board-mounted power dissipation ratings for TCR3DG series are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm Metal pattern ratio: a surface approximately 50 %, the reverse side approximately 50 % Through hole: diameter 0.5 mm x 24 Power dissipation PD (mW) 1000 800 600 400 200 0 −40 0 40 80 120 Ambient temperature Ta (°C) © 2016-2022 Toshiba Electronic Devices & Storage Corporation 5 2022-11-18 Rev.2.0 TCR3DG series Attention in Use ● Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommend the ESR of ceramic capacitor is under 10 Ω. For stable operation, please use over 1.0 μF. ● Mounting The long distance between IC and output capacitor might affect phase compensation by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need to be large and make the wire impedance small as possible. ● Power Dissipation Please have enough design patterns for expected maximum power dissipation. And under consideration of ambient temperature, input voltage, and output current etc, we recommend proper dissipation ratings for maximum power dissipation; in general maximum dissipation rating is 70 to 80 percent. ● Overcurrent Protection and Thermal shutdown Overcurrent protection and Thermal shutdown are designed in these products, but these are not designed to constantly ensure the suppression of the device within operation limits. Depending on the condition during actual usage, it could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not completely shorted out, these products might break down. When using these products, please read through and understand the concept of dissipation for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design. © 2016-2022 Toshiba Electronic Devices & Storage Corporation 6 2022-11-18 Rev.2.0 TCR3DG series Representative Typical Characteristics Output Voltage vs. Input Voltage VOUT = 1.0 V 2.0 VOUT (V) VOUT (V) CIN = 1 μF, COUT = 1 μF Output voltage Output voltage 1.5 1.0 IOUT = 300mA IOUT = 50mA 0.5 IOUT = 1mA 0 1 2 3 4 Input voltage VIN 2.0 1.5 IOUT = 300mA 1.0 IOUT = 50mA 0.5 IOUT = 1mA 0 5 IOUT = 300mA 1.5 IOUT = 50mA IOUT = 1mA VOUT (V) 2.5 3.5 Output voltage 3.0 0.5 3 4 2.0 0.0 5 (V) VOUT = 3.0 V 4.0 CIN = 1 μF, COUT = 1 μF 1.0 2 Input voltage VIN 3.5 2.0 1 (V) VOUT = 2.5 V 4.0 VOUT (V) CIN = 1 μF, COUT = 1 μF 0.0 0.0 Output voltage VOUT = 1.8 V 2.5 CIN = 1 μF, COUT = 1 μF 3.0 2.5 IOUT = 1mA IOUT = 300mA 1.5 1.0 IOUT = 50mA 0.5 0.0 0 1 2 3 4 Input voltage VIN 5 0 1 (V) 2 3 4 Input voltage VIN 5 (V) Output Voltage vs. Output Current 1.1 1.9 VIN = 2.0 V, Output voltage 1.0 0.9 0 50 100 150 200 250 CIN = 1 μF, COUT = 1 μF 1.8 1.7 0 300 Output current IOUT (mA) © 2016-2022 Toshiba Electronic Devices & Storage Corporation VIN = 2.8 V, VOUT (V) CIN = 1 μF, COUT = 1 μF VOUT (V) Output voltage VOUT = 1.8 V VOUT = 1.0 V 50 100 150 200 250 300 Output current IOUT (mA) 7 2022-11-18 Rev.2.0 TCR3DG series VOUT = 2.5 V 2.6 VIN = 3.5 V, 2.4 50 100 150 200 250 VIN = 4.0 V, CIN = 1 μF, COUT = 1 μF VOUT (V) 2.5 Output voltage Output voltage VOUT (V) CIN = 1 μF, COUT = 1 μF 0 VOUT = 3.0 V 3.1 3 2.9 0 300 50 Output current IOUT (mA) 100 150 200 250 300 Output current IOUT (mA) Dropout voltage vs. Output current VOUT = 1.0 V VOUT = 1.8 V 500 CIN = 1 μF, COUT = 1 μF Dropout voltage VDO (mV) Dropout voltage VDO (mV) 700 600 500 400 300 200 100 0 CIN = 1 μF, COUT = 1 μF 450 400 350 300 250 200 150 100 50 0 0 50 100 150 200 250 0 300 Output current IOUT (mA) Dropout voltage VDO (mV) Dropout voltage VDO (mV) 250 200 150 100 50 0 50 100 150 200 250 200 250 300 CIN = 1 μF, COUT = 1 μF 250 200 150 100 50 0 300 0 Output current IOUT (mA) © 2016-2022 Toshiba Electronic Devices & Storage Corporation 150 VOUT = 3.0 V 300 CIN = 1 μF, COUT = 1 μF 0 100 Output current IOUT (mA) VOUT = 2.5 V 300 50 50 100 150 200 250 300 Output current IOUT (mA) 8 2022-11-18 Rev.2.0 TCR3DG series Quiescent Current vs. Input voltage VOUT = 1.0 V CIN = 1 μF, COUT = 1 μF IOUT = 0 mA 150 100 50 CIN = 1 μF, COUT = 1 μF IOUT = 0 mA 350 300 250 200 150 100 50 0 0 0 1 2 3 4 Input voltage VIN 0 5 (V) 1 Quiescent current IB (μA) CIN = 1 μF, COUT = 1 μF IOUT = 0 mA 350 300 250 200 150 100 50 0 0 1 2 3 Input voltage 4 VIN 2 3 4 Input voltage VIN VOUT = 2.5 V 400 Quiescent current IB (μA) VOUT = 1.8 V 400 Quiescent current IB (μA) Quiescent current IB (μA) 200 5 (V) VOUT = 3.0 V 400 CIN = 1 μF, COUT = 1 μF IOUT = 0 mA 350 300 250 200 150 100 50 0 5 0 (V) 1 2 3 4 Input voltage VIN 5 (V) Quiescent Current vs Ambient temperature, VOUT = 1.0 V Quiescent current IB (μA) Quiescent current IB (μA) 150 100 50 VIN = 2.0 V CIN = 1 μF, COUT = 1 μF IOUT = 0 mA 0 -50 0 VOUT = 3.0 V 150 50 50 VIN = 4.0 V CIN = 1 μF, COUT = 1 μF IOUT = 0 mA 0 -50 100 Ambient temperature Ta (°C) © 2016-2022 Toshiba Electronic Devices & Storage Corporation 100 9 0 50 Ambient temperature Ta (°C) 100 2022-11-18 Rev.2.0 TCR3DG series Ripple rejection ratio vs. Frequency VOUT = 1.0 V (dB) 90 70 60 50 40 30 10 90 80 80 20 VOUT = 1.8 V 100 Ripple rejection ratio Ripple rejection ratio (dB) 100 VIN = 2.0 V, Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C 0 70 60 50 40 30 20 10 VIN = 2.8 V, Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C 0 10 100 1000 10000 100000 10 90 80 70 60 50 40 30 10 VIN = 3.5 V, Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C 100 1000 100000 100 90 80 70 60 50 40 30 20 10 0 10 10000 VOUT = 3.0 V Ripple rejection ratio (dB) Ripple rejection ratio (dB) VOUT = 2.5 V 100 1000 Frequency f (Hz) Frequency f (Hz) 20 100 10000 VIN = 4.0 V, Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C 0 100000 10 Frequency f (Hz) 100 1000 10000 100000 Frequency f (Hz) Output Voltage vs. Output Current VOUT = 1.8 V VIN = 2.0 V VOUT (V) 5.5 V Output voltage Pulse width = 1 ms Output voltage VOUT (V) VOUT = 1.0 V 5.5 V VIN = 2.8 V Output current IOUT (mA) Output current IOUT (mA) © 2016-2022 Toshiba Electronic Devices & Storage Corporation Pulse width = 1 ms 10 2022-11-18 Rev.2.0 TCR3DG series VOUT = 3.0 V VOUT = 2.5 V Pulse width = 1 ms VOUT (V) VOUT (V) Output voltage Output voltage Pulse width = 1 ms 5.5V 5.5V VIN=3.5V VIN=4.0V Output current IOUT (mA) Output current IOUT (mA) VIN = 2.0 V, CIN = 1 μF, COUT = 1 μF 400 200 0 VOUT = 1.8 V (IOUT = 1 mA ⇔ 300 mA) Output current IOUT (mA) VOUT = 1.0 V (IOUT = 1 mA ⇔ 300 mA) Output voltage VOUT (V) Output voltage VOUT (V) Output current IOUT (mA) Load Transient Response 1.1 1.0 0.9 Time 200 0 1.9 1.8 1.7 Time t (50 μs/div) 0 Output current IOUT (mA) 200 Output voltage VOUT (V) Output current IOUT (mA) Output voltage VOUT (V) 400 2.6 2.5 2.4 Time t (50 μs/div) © 2016-2022 Toshiba Electronic Devices & Storage Corporation t (50 μs/div) VOUT = 3.0 V (IOUT = 1 mA ⇔ 300 mA) VOUT = 2.5 V (IOUT = 1 mA ⇔ 300 mA) VIN = 3.5 V, CIN = 1 μF, COUT = 1 μF VIN = 2.8 V, CIN = 1 μF, COUT = 1 μF 400 VIN = 4.0 V, CIN = 1 μF, COUT = 1 μF 400 200 0 3.1 3.0 2.9 Time 11 t (50 μs/div) 2022-11-18 Rev.2.0 TCR3DG series tON Response VOUT = 2.5 V 0 0.5 IOUT (mA) 0 IOUT = 300mA IOUT = 50mA 1.0 2.0 IOUT (mA) VOUT (V) 1.0 200 0 Time VIN = 3.5 V, CIN = 1 μF, COUT = 1 μF VCT (V) VIN = 2.0 V, CIN = 1 μF, COUT = 1 μF 1.0 VOUT (V) VCT (V) VOUT = 1.0 V 0 IOUT = 50mA 1.0 IOUT = 300mA 0 200 0 Time t (20 μs/div) t (20 μs/div) tOFF Response VOUT = 1.0 V IOUT = 50mA 0 200 IOUT = 300mA 0 Time VCT (V) 0.5 1.0 VOUT (V) 1.0 0 VIN = 3.5 V, CIN = 1 μF, COUT = 1 μF 2.0 IOUT (mA) VCT (V) VOUT (V) VIN = 2.0 V, CIN = 1 μF, COUT = 1 μF 1.0 IOUT (mA) VOUT = 2.5V 200 0 IOUT = 50mA 1.0 0 IOUT = 300mA 0 Time t (20 μs/div) t (20 μs/div) The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2016-2022 Toshiba Electronic Devices & Storage Corporation 12 2022-11-18 Rev.2.0 TCR3DG series Package Information WCSP4E Unit : mm Weight : 0.34 mg ( typ.) © 2016-2022 Toshiba Electronic Devices & Storage Corporation 13 2022-11-18 Rev.2.0 TCR3DG series Land pattern dimensions for reference only Unit : mm 0.35 0.35 0.185 © 2016-2022 Toshiba Electronic Devices & Storage Corporation 14 2022-11-18 Rev.2.0 TCR3DG series RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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