TCR3DM105,LF

TCR3DM series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3DM series 300 mA CMOS Low Dropout Regulator with inrush current protection circuit The TCR3DM series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving up to 300 mA. They feature over-current protection, over-temperature protection, Inrush current protection circuit and Auto-discharge function. The TCR3DM series are offered in the ultra small plastic mold package DFN4/DFN4E (1.0 mm x 1.0 mm; t 0.58 mm). It has a low dropout voltage of 210 mV (2.5 V output, IOUT = 300 mA) with low output noise voltage of 38 μVrms (2.5 V output) and a load transient response of only ΔVOUT = ±80 mV ( IOUT = 1 mA⇔300 mA, COUT =1.0 μF). As small ceramic input and output capacitors can be used with the TCR3DM series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. BOTTOM VIEW ILLUSTRATION DFN4/DFN4E Weight : 1.3 mg ( typ.) Features  Low Dropout voltage VDO = 210 mV (typ.) at 2.5 V-output, IOUT = 300 mA VDO = 270 mV (typ.) at 1.8 V-output, IOUT = 300 mA VDO = 490 mV (typ.) at 1.2 V-output, IOUT = 300 mA  Low output noise voltage VNO = 38 μVrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz  Fast load transient response (ΔVOUT = ±80 mV (typ.) at IOUT = 1 mA ⇔ 300 mA, COUT =1.0 μF)  High ripple rejection (R.R = 70 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f =1 kHz)  Overcurrent protection  Over-temperature protection  Inrush current protection circuit  Auto-discharge  Pull down connection between CONTROL and GND  Ceramic capacitors can be used (CIN = 1.0 μF, COUT =1.0 μF)  Ultra small package DFN4/DFN4E (1.0 mm x 1.0 mm ; t 0.58 mm) Start of commercial production 2013-03 © 2021 Toshiba Electronic Devices & Storage Corporation 1 2021-09-27 TCR3DM series Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 V Output current IOUT 300 mA Power dissipation PD 420 Operating temperature range Topr -40 to 85 °C Tj 150 °C Tstg -55 to 150 °C Junction temperature Storage temperature range (Note1) mW Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy(FR4) board dimension: 40mm x 40mm x 1.6mm, both sides of board. Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole hall: diameter 0.5mm x 24 Pin Assignment (top view) VIN CONTROL 4 3 * 1 2 VOUT GND *Center electrode should be connected to GND or Open © 2021 Toshiba Electronic Devices & Storage Corporation 2 2021-09-27 TCR3DM series List of Products Number, Output voltage and Marking Product No. Output voltage(V) Marking Product No. Output voltage(V) Marking TCR3DM10 1.0 1P0 TCR3DM28 2.8 2P8 TCR3DM105 1.05 1PA TCR3DM285 2.85 2PD TCR3DM11 1.1 1P1 TCR3DM30 3.0 3P0 TCR3DM12 1.2 1P2 TCR3DM32 3.2 3P2 TCR3DM13 1.3 1P3 TCR3DM33 3.3 3P3 TCR3DM135 1.35 1PD TCR3DM35 3.5 3P5 TCR3DM15 1.5 1P5 TCR3DM36 3.6 3P6 TCR3DM18 1.8 1P8 TCR3DM45 4.5 4P5 TCR3DM25 2.5 2P5 Please contact your local Toshiba representative if you are interested in products with other output voltages . Top Marking (top view) Example: TCR3DM33 (3.3 V output) Lot code 3P3 INDEX © 2021 Toshiba Electronic Devices & Storage Corporation 3 2021-09-27 TCR3DM series Electrical Characteristics (Unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1.0 μF, COUT = 1.0 μF, Tj = 25°C) Characteristics Output voltage accuracy Input voltage Symbol VOUT VIN Test Condition IOUT = 50 mA (Note 2) Max Unit VOUT