TCR3UF series
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR3UF series
Ultra low quiescent current, Fast Load Transient 300 mA CMOS Low Dropout Regulator
1. Description
The TCR3UF series are CMOS process single output voltage regulators
with an on/off control input, featuring ultra low quiescent bias current and low
dropout voltage.
These voltage regulators are available in fixed output voltages between 0.8
V and 5.0 V and capable of driving up to 300 mA. They feature Overcurrent
protection, thermal shutdown function and auto-discharge option.
The TCR3UF series is offered in general purpose package SMV (2.9 mm
x 2.8 mm; t 1.1 mm (typ.)) and has a low dropout voltage of 206 mV (3.3 V
output, IOUT = 300 mA). As small ceramic input and output capacitors 1 μF
can be used with the TCR3UF series, these devices are ideal for portable
applications that require high-density board assembly such as cellular
phones, IoT equipment and wearable devices.
SMV
Weight:
SMV (SOT-25)(SC-74A) : 16 mg (typ.)
2. Applications
Power IC developed for portable applications, IoT equipment and wearable devices
3. Features
Low quiescent bias current ( IB = 0.34 μA (typ.) at IOUT = 0 mA, output voltage up to 1.5 V)
High Ripple rejection ratio 70 dB at 0.8 V output
Fast Load transient response -51/+36 mV at 0.8 V output, IOUT = 1 mA ⇔ 50 mA
Low dropout voltage
Wide range output voltage line up ( VOUT = 0.8 to 5.0 V )
High VOUT accuracy ±1.0 %
Auto-discharge (TCR3UFxxA series)/ Non-discharge (TCR3UFxxB series) line up
Overcurrent protection
Thermal shutdown
Inrush current reduction
Pull down connection between CONTROL and GND
Ceramic capacitors can be used (CIN = 1 μF, COUT = 1 μF)
General purpose package SMV(SOT-25) (SC-74A)
VDO = 206 mV (typ.) at 3.3 V output, IOUT = 300 mA
( 1.8 V ≤ VOUT )
Start of commercial production
2019-09
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TCR3UF series
4. Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Input voltage
VIN
-0.3 to 6.0
V
Control voltage
VCT
-0.3 to VIN + 0.3 ≤ 6.0
V
Output voltage
VOUT
-0.3 to VIN + 0.3 ≤ 6.0
V
Power dissipation
Junction temperature
Storage temperature range
Note:
200
(Note1)
580
(Note2)
PD
mW
Tj
150
°C
Tstg
−55 to 150
°C
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the
operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note 1: Unit Rating
Note 2: Rating at mounting on a board
(FR4 board: 25.4 mm 25.4 mm 1.6 mm)
5. Operating Ranges
Characteristics
Symbol
Rating
1.5 to 5.5
Unit
Input voltage
VIN
Control voltage
VCT
0 to VIN
V
Output voltage
VOUT
0.8 to 5.0
V
Output current
IOUT
Operating Temperature
Topr
-40 to 85
°C
COUT
≥ 1.0 μF
―
CIN
≥ 1.0 μF
―
Output Capacitance
Input Capacitance
DC
0 to 300
(Note 3)
(Note 4)
V
mA
Note 3: Please refer to Dropout voltage (Page 6) and use it within Absolute Maximum Ratings Junction temperature and
Operating Temperature Ranges.
Note 4: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such
conditions may adversely impact product reliability and results in failures not covered by warranty.
6. Pin Assignment (top view)
SMV(SOT-25)(SC-74A)
VOUT
5
1
VIN
NC
4
2
GND
3
CONTROL
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TCR3UF series
7. List of Products Number, Output voltage and Marking
Product No.
Output voltage(V)
TCR3UF08A
Autodischarge
Autodischarge
Marking
Product No.
Output voltage(V)
0.8
0R8
TCR3UF08B
0.8
0T8
TCR3UF085A
0.85
0RA
TCR3UF085B
0.85
0TA
TCR3UF09A
0.9
0R9
TCR3UF09B
0.9
0T9
TCR3UF095A
0.95
0RB
TCR3UF095B
0.95
0TB
TCR3UF10A
1.0
1R0
TCR3UF10B
1.0
1T0
TCR3UF105A
1.05
1RC
TCR3UF105B
1.05
1TC
TCR3UF11A
1.1
1R1
TCR3UF11B
1.1
1T1
TCR3UF115A
1.15
1RE
TCR3UF115B
1.15
1TE
TCR3UF12A
1.2
1R2
TCR3UF12B
1.2
1T2
TCR3UF13A
1.3
1R3
TCR3UF13B
1.3
1T3
TCR3UF135A
1.35
1RF
TCR3UF135B
1.35
1TF
TCR3UF14A
1.4
1R4
TCR3UF14B
1.4
1T4
TCR3UF15A
1.5
1R5
TCR3UF15B
1.5
1T5
TCR3UF16A
1.6
1R6
TCR3UF16B
1.6
1T6
TCR3UF175A
1.75
1RG
TCR3UF175B
1.75
1TG
TCR3UF18A
1.8
1R8
TCR3UF18B
1.8
1T8
TCR3UF1825A
1.825
1RH
TCR3UF1825B
1.825
1TH
TCR3UF185A
1.85
1RJ
TCR3UF185B
1.85
1TJ
TCR3UF19A
1.9
1R9
TCR3UF19B
1.9
TCR3UF20A
2.0
2R0
TCR3UF20B
2.0
2T0
TCR3UF25A
2.5
2R5
TCR3UF25B
2.5
2T5
TCR3UF26A
2.6
2R6
TCR3UF26B
2.6
2T6
TCR3UF27A
2.7
2R7
TCR3UF27B
2.7
2T7
TCR3UF28A
2.8
2R8
TCR3UF28B
2.8
2T8
TCR3UF285A
2.85
2RK
TCR3UF285B
2.85
2TK
TCR3UF29A
2.9
2R9
TCR3UF29B
2.9
2T9
TCR3UF2925A
2.925
2RL
TCR3UF2925B
2.925
2TL
TCR3UF30A
3.0
3R0
TCR3UF30B
3.0
3T0
TCR3UF31A
3.1
3R1
TCR3UF31B
3.1
3T1
TCR3UF32A
3.2
3R2
TCR3UF32B
3.2
3T2
TCR3UF33A
3.3
3R3
TCR3UF33B
3.3
3T3
TCR3UF35A
3.5
3R5
TCR3UF35B
3.5
3T5
TCR3UF36A
3.6
3R6
TCR3UF36B
3.6
3T6
TCR3UF41A
4.1
4R1
TCR3UF41B
4.1
4T1
TCR3UF42A
4.2
4R2
TCR3UF42B
4.2
4T2
TCR3UF45A
4.5
4R5
TCR3UF45B
4.5
4T5
TCR3UF50A
5.0
5R0
TCR3UF50B
5.0
5T0
Yes
No
Marking
1T9
Top Marking (top view)
3R3
Example: TCR3UF33A (3.3 V output)
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TCR3UF series
8. Block Diagram
VOUT
VIN
Current Limit
Thermal
Shutdown
+
*
CONTROL
*Auto-discharge version
(TCR3UFxxA series) only
Control
Logic
Pull down
GND
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TCR3UF series
9. Electrical Characteristics
(Unless otherwise specified,
VIN = VOUT + 1 V (VOUT > 1.5 V), VIN = 2.5 V (VOUT ≤ 1.5 V), IOUT = 50 mA, CIN = COUT = 1 μF)
Tj = -40 to 85°C
(Note 10)
Tj = 25°C
Characteristics
Output voltage accuracy
Input voltage
Line regulation
Load regulation
Symbol
Control pull down current
Dropout voltage
Unit
Min
Typ.
Max
Min
Max
VOUT < 1.8 V
-18
―
+18
―
―
mV
1.8 V ≤ VOUT
-1.0
―
+1.0
―
―
%
1.5
―
5.5
1.5
5.5
V
(Note 6)
―
1
15
―
―
mV
(Note
―
21
30
―
―
mV
VOUT
IOUT = 50 mA
(Note 5)
VIN
IOUT = 1 mA
Reg･line
IOUT = 1 mA
Reg･load
1 mA ≤ IOUT ≤ 300 mA
7)
IB(ON1)
IOUT = 0 mA, VOUT ≤ 1.5 V (Note 8)
―
0.34
―
―
0.58
μA
IB(ON2)
IOUT = 0 mA,
1.75 V ≤ VOUT ≤ 5 V
―
0.38
―
―
0.68
μA
Quiescent current
Stand-by current
Test Condition
(Note 8)
IB (OFF1)
VCT = 0 V, VIN = 2.5 V
―
0.03
―
―
0.16
μA
IB (OFF2)
VCT = 0 V, VIN = 5.5 V
―
0.03
―
―
0.20
μA
―
ICT
―
0.1
―
―
―
μA
VOUT = 1.8 V
―
341
―
―
464
mV
VOUT = 3.3 V
―
206
―
―
287
mV
―
545
―
400
―
mA
VDO
IOUT = 300 mA
Output current limit
ICL
VOUT = VOUT(NOM) 90%
(Note 10)
Output noise voltage
VNO
IOUT = 10 mA,
10 Hz ≤ f ≤ 100 kHz, Ta = 25°C
(Note 7)
―
41
―
―
―
μVrms
Ripple rejection ratio
R.R.
IOUT = 10 mA,
f = 1 kHz, VRipple = 200 mVp-p,
Ta = 25°C (Note 7)
―
70
―
―
―
dB
IOUT = 1 mA 50 mA (Note 9)
―
-51
―
―
―
mV
IOUT = 50 mA 1 mA (Note 9)
―
+36
―
―
―
mV
−40°C ≤ Topr ≤ 85°C
―
75
―
―
―
ppm/°C
Load transient response
Temperature coefficient
⊿VOUT
TCVO
Control voltage (ON)
VCT (ON)
―
1.0
―
5.5
1.0
5.5
V
Control voltage (OFF)
VCT (OFF)
―
0
―
0.4
0
0.4
V
Discharge on resistance
RSD
VCT = 0 V, VIN = 5.5 V
―
7
―
5
20
Ω
Thermal shutdown
temperature
TSD
(Note 10) (Note 11)
―
158
―
―
―
°C
Thermal shutdown
hysteresis
TSDH
(Note 10) (Note 11)
―
28
―
―
―
°C
Note 5: stable state with fixed IOUT condition
Note 6: VOUT ≤ 1.5 V, 2.5 V ≤ VIN ≤ 5.5 V
1.75 V ≤ VOUT ≤ 4.2 V, VOUT + 1 V ≤ VIN ≤ 5.5 V
VOUT = 4.5 V, VOUT = 5.0 V, not applicable
Note 7: VOUT = 0.8V
Note 8:
except Control pull down current (ICT)
Note 9:
VOUT = 0.8 V, VIN = 3.3 V
Note 10: This parameter is warranted by design
Note 11: VOUT = 0.8 V, VIN = 2.5V
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TCR3UF series
10. Dropout voltage
(IOUT = 300 mA, CIN = COUT = 1 μF)
Output voltages
Symbol
0.8 V ≤ VOUT < 0.9 V
0.9 V ≤ VOUT < 1.0 V
1.0 V ≤ VOUT < 1.1 V
1.1 V ≤ VOUT < 1.2 V
1.2 V ≤ VOUT < 1.3 V
1.3 V ≤ VOUT < 1.5 V
1.5 V ≤ VOUT < 1.6 V
1.6 V ≤ VOUT < 1.8 V
VDO
1.8 V ≤ VOUT < 2.0 V
2.0 V ≤ VOUT < 2.5 V
2.5 V ≤ VOUT < 3.0 V
3.0 V ≤ VOUT < 3.6 V
3.6 V ≤ VOUT < 4.5 V
4.5 V ≤ VOUT ≤ 5.0 V
Note 12:
Typ.
Tj = 25°C
Max
(Note 12)
―
―
―
―
―
―
―
―
―
―
1020
1257
933
1157
848
1057
760
957
667
857
580
757
462
617
420
537
341
464
297
412
―
―
―
―
226
342
206
287
184
245
159
224
Min
Unit
mV
Tj = -40 to 85 °C. This parameter is warranted by design
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TCR3UF series
11. Application Note
11.1. Example of Application Circuit
1.0 μF
VOUT
NC
VOUT
voltage
HIGH
ON
LOW
OFF
OPEN
OFF
1.0 μF
CONTROL
voltage
VIN
GND
CONTROL
The figure above shows the Example of configuration for using a Low dropout regulator. Insert a capacitor at V OUT
and VIN pins for stable input/output operation. (Ceramic capacitors can be used.)
11.2. Power Dissipation
Both unit and board-mounted power dissipation ratings for TCR3UF series are available in the Absolute Maximum Ratings
table.
Power dissipation is measured on the board shown below.
[The Board Condition]
PD – Ta (SMV)
Board material: FR4 board
Board dimension: 25.4 mm 25.4 mm 1.6 mm
Power dissipation PD (mW)
Copper area: 645 mm2
800
① Board dimension 25.4 mm x 25.4 mm, x1.6 mm
Copper area 645 mm2, mounted on FR4 Board
② Unit Rating
600
①
400
②
200
0
40
0
40
120
80
Ambient temperature Ta (°C)
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TCR3UF series
Attention in Use
●
Output Capacitors
Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected
thermal features. Please consider application condition for selecting capacitors. And Toshiba recommends the ESR of ceramic
capacitor is under 10 Ω. For stable operation, we recommend over 1 μF.
●
Mounting
The long distance between IC and input output capacitor might affect phase compensation by impedance in wire and inductor.
For stable power supply, input output capacitor need to mount near IC as much as possible. Also V IN and GND pattern need
to be large and make the wire impedance small as possible.
●
Permissible Loss
Please have enough design patterns for expected maximum permissible loss. And under consideration of ambient
temperature, input voltage, and output current etc., we recommend proper dissipation ratings for maximum permissible loss;
in general maximum dissipation rating is 70 to 80 %.
●
Over current Protection and Thermal shutdown function
Over current protection and Thermal shutdown function are designed in these products, but these are not designed to
constantly ensure the suppression of the device within operation limits. Depending on the condition during actual usage, it
could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not
completely shorted out, these products might break down.
When using these products, please read through and understand the concept of dissipation for absolute maximum ratings
from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum
ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design.
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TCR3UF series
12. Representative Typical Characteristics
12.1. Output Voltage vs. Input Voltage
VOUT = 1.2 V
VOUT = 0.8 V
Output voltage VOUT (V)
IOUT = 1 mA
1.6
CIN = 1μF, COUT = 1μF, Ta = 25℃
0.8
0.6
IOUT = 300 mA
0.4
0.2
CIN = 1μF, COUT = 1μF, Ta = 25℃
IOUT = 1 mA
Output voltage VOUT (V)
1
1.2
IOUT = 300 mA
0.8
0.4
0
0
0
1
2
3
4
Input voltage VIN (V)
5
0
1
2
3
4
Input voltage VIN (V)
VOUT = 1.8 V
VOUT = 2.8 V
3.5
CIN = 1μF, COUT = 1μF, Ta = 25℃
2
Output voltage VOUT (V)
Output voltage VOUT (V)
2.5
IOUT = 1 mA
1.5
IOUT = 300 mA
1
0.5
CIN = 1μF, COUT = 1μF, Ta = 25℃
3
IOUT = 1 mA
2.5
2
IOUT = 300 mA
1.5
1
0.5
0
0
0
1
2
3
4
0
5
1
Input voltage VIN (V)
VOUT = 3.3 V
4
6
CIN = 1μF, COUT = 1μF, Ta = 25℃
IOUT = 1 mA
3
2
2
3
4
5
Input voltage VIN (V)
VOUT = 5.0 V
Output voltage VOUT (V)
Output voltage VOUT (V)
5
IOUT = 300 mA
1
0
CIN = 1μF, COUT = 1μF, Ta = 25℃
5
IOUT = 1 mA
4
3
IOUT = 300 mA
2
1
0
0
1
2
3
4
5
Input voltage VIN (V)
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0
9
1
2
3
4
Input voltage VIN (V)
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TCR3UF series
12.2. Quiescent Current vs. Output Current
VOUT = 1.2 V
VOUT = 0.8 V
1000
CIN = 1μF, COUT = 1μF, Ta = 25 ℃
Quiescent current IBON (μA)
Quiescent current IBON (μA)
1000
IOUT falling
100
10
1
IOUT rising
0.1
0.0001 0.001
0.01
0.1
1
CIN = 1μF, COUT = 1μF, Ta = 25 ℃
IOUT falling
100
10
1
IOUT rising
0.1
0.0001 0.001 0.01
0.1
1
Output current IOUT (mA)
10
Output current IOUT (mA)
VOUT = 1.8 V
100
VOUT = 2.8 V
1000
CIN = 1μF, COUT = 1μF, Ta = 25 ℃
Quiescsent current IBON (μA)
Quiescent current IBON (μA)
1000
IOUT falling
10
1
IOUT rising
0.1
0.0001 0.001 0.01
0.1
1
Output current IOUT (mA)
CIN = 1μF, COUT = 1μF, Ta = 25 ℃
IOUT falling
100
10
10
1
IOUT rising
0.1
0.0001 0.001 0.01
0.1
1
Output current IOUT (mA)
100
1000
CIN = 1μF, COUT = 1μF, Ta = 25 ℃
IOUT falling
10
1
IOUT rising
0.1
0.0001 0.001 0.01
0.1
1
Output current IOUT (mA)
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VOUT = 5.0 V
Quiescent current IBON (μA)
Quiescent current IBON (μA)
VOUT = 3.3 V
1000
10
10
CIN = 1μF, COUT = 1μF, Ta = 25 ℃
IOUT falling
100
10
1
IOUT rising
0.1
0.0001 0.001
0.01
0.1
1
10
Output current IOUT (mA)
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TCR3UF series
12.3. Quiescent Current vs. Input Voltage
VOUT = 1.2 V
VOUT = 0.8 V
1.0
CIN = 1μF, COUT = 1μF, Ta = 25℃
Quiescent current IBON (μA)
Quiescent current IBON (μA)
1.0
0.8
0.6
0.4
0.2
0.0
CIN = 1μF, COUT = 1μF, Ta = 25℃
0.8
0.6
0.4
0.2
0.0
1.5
2.5
3.5
4.5
Input voltage VIN (V)
5.5
1.5
VOUT = 1.8 V
1.0
CIN = 1μF, COUT = 1μF, Ta = 25℃
0.8
0.6
0.4
0.2
0.0
1.5
2.5
3.5
4.5
Input voltage VIN (V)
CIN = 1μF, COUT = 1μF, Ta = 25℃
0.8
0.6
0.4
0.2
0.0
5.5
1.5
VOUT = 3.3 V
2.5
3.5
4.5
Input voltage VIN (V)
5.5
VOUT = 5.0 V
1.0
(μA)
CIN = 1μF, COUT = 1μF, Ta = 25℃
IBON
0.8
Quiescent current
Quiescent current IBON (μA)
1.0
5.5
VOUT = 2.8 V
Quiescent current IBON (μA)
Quiescent current IBON (μA)
1.0
2.5
3.5
4.5
Input voltage VIN (V)
0.6
0.4
0.2
CIN = 1μF, COUT = 1μF, Ta = 25℃
0.8
0.6
0.4
0.2
0.0
0.0
1.5
2.5
3.5
4.5
Input voltage VIN (V)
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1.5
5.5
11
2.5
3.5
4.5
Input voltage VIN (V)
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TCR3UF series
12.4. Dropout Voltage vs. Output Current
VOUT = 1.2 V
VOUT = 0.8 V
800
CIN = 1μF, COUT = 1μF, Ta = 25℃
Dropout voltage VDO (mV)
Dropout voltage VDO (mV)
1200
1000
800
600
400
200
CIN = 1μF, COUT = 1μF, Ta = 25℃
600
400
200
0
0
0
100
200
Output current IOUT (mA)
0
300
VOUT = 1.8 V
250
CIN = 1μF, COUT = 1μF, Ta = 25℃
300
200
100
0
CIN = 1μF, COUT = 1μF, Ta = 25℃
200
150
100
50
0
0
100
200
Output current IOUT (mA)
300
0
VOUT = 3.3 V
200
100
200
300
Output current IOUT (mA)
VOUT = 5.0 V
160
CIN = 1μF, COUT = 1μF, Ta = 25℃
Dropout voltage VDO (mV)
Dropout voltage VDO (mV)
300
VOUT = 2.8 V
Dropout voltage VDO (mV)
Dropout voltage VDO (mV)
400
100
200
Output current IOUT (mA)
150
100
50
0
CIN = 1μF, COUT = 1μF, Ta = 25℃
120
80
40
0
0
100
200
Output current IOUT (mA)
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300
0
12
100
200
Output current IOUT (mA)
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TCR3UF series
12.5. Ripple Rejection Ratio vs. Frequency
VOUT = 2.8V
VOUT = 0.8V
90
90
Ripple Rejection Ratio (dB)
100
Ripple Rejection Ratio (dB)
100
80
70
60
50
40
30
20
VIN = 2.5 V, VIN ripple = 200 mVp-p
CIN = none, COUT = 1 μF
IOUT = 10 mA, Ta = 25 °C
10
0
10
100
1000
10000
Frequency f (Hz)
80
70
60
50
40
30
20
VIN = 3.8 V, VIN ripple = 200 mVp-p
CIN = none, COUT = 1 μF
IOUT = 10 mA, Ta = 25 °C
10
0
100000
10
100
1000 10000 100000
Frequency f (Hz)
12.6. Load Transient Response
VOUT = 2.8V
VOUT = 2.8V
VOUT: 50 mV/div
VOUT: 200 mV/div
IOUT: 50 mA/div
IOUT: 10 mA/div
50 μs/div
VIN = 3.8 V, VCT = 1 V, COUT = 1 μF
IOUT = 1 mA ⇔ 50 mA, Ta = 25 °C
© 2019-2021
Toshiba Electronic Devices & Storage Corporation
50 μs/div
13
VIN = 3.8 V, VCT = 1 V, COUT = 1 μF
IOUT = 0 mA ⇔ 10 mA, Ta = 25 °C
2021-10-28
TCR3UF series
12.7. tON Response
VOUT = 2.8V
VOUT = 2.8V
VIN = 3.8 V, COUT = 1 μF
VIN = 3.8 V, COUT = 1 μF
VCT: 1 V/div
IOUT = 0 mA, Ta = 25 °C
VCT: 1 V/div
VOUT: 2 V/div
VOUT: 2 V/div
IIN: 200 mA/div
IIN: 200 mA/div
IOUT = 300 mA, Ta = 25 °C
500 μs/div
500 μs/div
12.8. tOFF Response (Auto-discharge)
VOUT = 2.8V
VOUT = 2.8V
VIN = 3.8 V, COUT = 1 μF
VIN = 3.8 V, COUT = 1 μF
IOUT = 0 mA, Ta = 25 °C
IOUT = 300 mA, Ta = 25 °C
VCT: 1 V/div
VCT: 1 V/div
VOUT: 2 V/div
VOUT: 2 V/div
IIN: 200 mA/div
IIN: 200 mA/div
500 μs/div
500 μs/div
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019-2021
Toshiba Electronic Devices & Storage Corporation
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TCR3UF series
13. Package Information
SMV (SOT-25)(SC-74A)
Unit: mm
Weight: 16 mg (typ.)
© 2019-2021
Toshiba Electronic Devices & Storage Corporation
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2021-10-28
TCR3UF series
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