TCR3UG series
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR3UG series
Ultra low quiescent current, Fast Load Transient 300 mA CMOS Low Dropout Regulator in ultra
small package
1. Description
The TCR3UG series are CMOS general-purpose single-output voltage
regulators with an on/off control input, featuring ultra low quiescent bias
current and low dropout voltage.
These voltage regulators are available in fixed output voltages between 0.8
V and 5.0 V and capable of driving up to 300 mA. They feature Over-current
protection, Thermal Shutdown function and Auto-discharge option.
The TCR3UG series is offered in the ultra small plastic mold package
WCSP4F (0.645 mm x 0.645 mm (typ.); t 0.33 mm (max)) and has a low
dropout voltage of 155 mV (3.3 V output, IOUT = 300 mA). As small ceramic
input and output capacitors 1 μF can be used with the TCR3UG series, these
devices are ideal for portable applications that require high-density board
assembly
such as cellular phones, IoT equipment and wearable devices.
WCSP4F
Weight: 0.26 mg (typ.)
2. Applications
Power IC developed for portable applications, IoT equipment and wearable devices
3. Features
Ultra small package WCSP4F (0.645 mm x 0.645 mm (typ.); t 0.33 mm (max)).
Low quiescent bias current (IB(ON) = 0.34 μA (typ.) at IOUT = 0 mA, output voltage up to 1.5 V)
High ripple rejection ratio 70 dB at 0.8 V-output
Fast load transient response ± 60 mV at 0.8 V-output, IOUT = 1 mA ⇔ 50 mA
Low dropout voltage
Wide range output voltage line up (VOUT = 0.8 to 5.0 V)
High VOUT accuracy ± 1.0 %
Auto-discharge (TCR3UGxxA series)/ Non-discharge (TCR3UGxxB series) line up
Overcurrent protection
Thermal shutdown function
Inrush current protection circuit
Pull down connection between CONTROL and GND
Ceramic capacitors can be used (CIN = 1 μF, COUT = 1 μF)
VDO =VIN-VOUT = 140 mV (typ.) at 3.3 V-output, IOUT = 300 mA
(1.8 V ≤ VOUT)
Start of commercial production
2017-10
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Toshiba Electronic Devices & Storage Corporation
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TCR3UG series
4. Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Input voltage
VIN
-0.3 to 6.0
V
Control voltage
VCT
-0.3 to VIN + 0.3 ≤ 6.0
V
Output voltage
VOUT
-0.3 to VIN + 0.3 ≤ 6.0
V
Power dissipation
PD
800
mW
Junction temperature
Tj
150
°C
Tstg
−55 to 150
°C
Storage temperature range
(Note1)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the
operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note1:
Rating at mounting on a board
Glass epoxy (FR4) board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm
Metal pattern ratio: a surface approximately 50 %, the reverse side approximately 50 %
Through hole : diameter 0.5 mm x 24
5. Operating Ranges
Characteristics
Symbol
Rating
Unit
Input voltage
VIN
1.5 to 5.5
Control voltage
VCT
0 to VIN
V
Output voltage
VOUT
0.8 to 5.0
V
Output current
IOUT
Operating Temperature
Topr
-40 to 85
°C
COUT
≥ 1.0 μF
―
CIN
≥ 1.0 μF
―
Output Capacitance
Input Capacitance
DC
(Note 2)
300
(Note 3)
V
mA
Note 2: IOUT = 1 mA.
Please refer to Dropout Voltage (Page 13) and use it within Absolute Maximum Ratings Junction temperature and
Operating Temperature Ranges.
Note 3: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such
conditions may adversely impact product reliability and results in failures not covered by warranty.
6. Pin Assignment (top view)
1
2
1
2
A
VIN
VOUT
B
CONTROL
GND
A
B
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TCR3UG series
7. List of Products Number, Output voltage and Marking
Product No.
Output voltage(V)
TCR3UG08A
Auto
discharge
Auto
discharge
Marking
Product No.
Output voltage(V)
0.8
A
TCR3UG08B
0.8
A
TCR3UG085A
0.85
B
TCR3UG085B
0.85
B
TCR3UG09A
0.9
C
TCR3UG09B
0.9
C
TCR3UG095A
0.95
D
TCR3UG095B
0.95
D
TCR3UG10A
1.0
E
TCR3UG10B
1.0
E
TCR3UG105A
1.05
F
TCR3UG105B
1.05
F
TCR3UG11A
1.1
H
TCR3UG11B
1.1
H
TCR3UG115A
1.15
J
TCR3UG115B
1.15
J
TCR3UG12A
1.2
K
TCR3UG12B
1.2
K
TCR3UG13A
1.3
L
TCR3UG13B
1.3
L
TCR3UG135A
1.35
M
TCR3UG135B
1.35
M
TCR3UG15A
1.5
N
TCR3UG15B
1.5
N
TCR3UG175A
1.75
P
TCR3UG175B
1.75
P
TCR3UG18A
1.8
R
TCR3UG18B
1.8
R
TCR3UG1825A
1.825
G
TCR3UG185B
1.85
S
TCR3UG185A
1.85
S
TCR3UG19B
1.9
Yes
No
Marking**
T
TCR3UG19A
1.9
T
TCR3UG25B
2.5
U
TCR3UG25A
2.5
U
TCR3UG26B
2.6
V
TCR3UG26A
2.6
V
TCR3UG27B
2.7
W
TCR3UG27A
2.7
W
TCR3UG28B
2.8
X
TCR3UG28A
2.8
X
TCR3UG285B
2.85
Y
TCR3UG285A
2.85
Y
TCR3UG30B
3.0
0
TCR3UG30A
3.0
0
TCR3UG31B
3.1
1
TCR3UG31A
3.1
1
TCR3UG32B
3.2
2
TCR3UG32A
3.2
2
TCR3UG33B
3.3
3
TCR3UG33A
3.3
3
TCR3UG35B
3.5
4
TCR3UG35A
3.5
4
TCR3UG36B
3.6
5
TCR3UG36A
3.6
5
TCR3UG41B
4.1
9
TCR3UG41A
4.1
9
TCR3UG42B
4.2
6
TCR3UG42A
4.2
6
TCR3UG45B
4.5
7
TCR3UG45A
4.5
7
TCR3UG50B
5.0
8
TCR3UG50A
5.0
8
**Marking is rotated 90 degrees to the left.
Top Marking (top view)
Example: TCR3UG08A (0.8 V output)
VOUT
Example: TCR3UG08B (0.8 V output)
GND
VOUT
CONTROL
VIN
VIN
A
A
GND
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TCR3UG series
8. Block Diagram
V OUT
V IN
Current Limit
Thermal
Shutdown
+
*
CONTROL
*Auto-discharge version
(TCR3UGxxA series) only
Control
Logic
Pull down
GND
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TCR3UG series
9. Electrical Characteristics
(Unless otherwise specified,
VIN = VOUT+1 V (VOUT>1.5V), VIN=2.5V (VOUT≤1.5V), IOUT = 50 mA, CIN = COUT = 1 μF)
Tj = -40 to 85°C
(Note 9)
Tj = 25°C
Characteristics
Symbol
Test Condition
Unit
Min
Typ.
Max
Min
Max
VOUT < 1.8 V
-18
―
+18
―
―
mV
1.8 V ≤ VOUT
-1.0
―
+1.0
―
―
%
1.5
―
5.5
1.5
5.5
V
VOUT
IOUT = 50 mA
(Note 4)
VIN
IOUT = 1 mA
Line regulation
Reg・line
IOUT = 1 mA
(Note 5)
―
1
15
―
―
mV
Load regulation
Reg・load
1 mA ≤ IOUT ≤ 300 mA
(Note 6)
―
10
30
―
―
mV
IB(ON1)
IOUT = 0 mA, VOUT ≤ 1.5V (Note 7)
―
0.34
―
―
0.58
μA
IB(ON2)
IOUT = 0 mA,
1.75 V ≤ VOUT ≤ 5 V
―
0.38
―
―
0.68
μA
Output voltage accuracy
Input voltage
Quiescent current
Stand-by current
(Note 7)
IB (OFF1)
VCT = 0 V, VIN = 2.5 V
―
0.03
―
―
0.16
μA
IB (OFF2)
VCT = 0 V, VIN = 5.5 V
―
0.03
―
―
0.20
μA
―
0.1
―
―
―
μA
VOUT = 1.8 V
―
335
―
―
457
mV
VOUT = 3.3 V
―
140
―
―
273
mV
―
Control pull down current
ICT
Dropout voltage
VDO
IOUT = 300 mA
Output noise voltage
VNO
IOUT = 10 mA,
10 Hz ≤ f ≤ 100 kHz, Ta = 25°C
(Note 6)
―
50
―
―
―
μVrms
Ripple rejection ratio
R.R.
IOUT = 10 mA,
f = 1 kHz, VRipple = 200 mVp-p,
Ta = 25°C (Note 6)
―
70
―
―
―
dB
IOUT = 1 mA 50 mA (Note 8)
―
-60
―
―
―
mV
IOUT = 50 mA 1 mA (Note 8)
―
+60
―
―
―
mV
−40°C ≤ Topr ≤ 85°C
―
75
―
―
―
ppm/°C
Load transient response
⊿VOUT
Temperature coefficient
TCVO
Control voltage (ON)
VCT (ON)
―
1.0
―
5.5
1.0
5.5
V
Control voltage (OFF)
VCT (OFF)
―
0
―
0.4
0
0.4
V
RSD
―
―
10
―
―
―
Ω
Discharge on resistance
Note 4: stable state with fixed IOUT condition
Note 5: VOUT ≤ 1.5 V, 2.5 V ≤ VIN ≤ 5.5 V
1.75 V ≤ VOUT ≤ 4.2 V, VOUT + 1 V ≤ VIN ≤ 5.5 V
VOUT = 4.5 V, VOUT = 5.0 V, not applicable
Note 6: VOUT = 0.8V
Note 7: except Control pull down current (ICT)
Note 8: VOUT = 0.8 V, VIN = 3.3 V
Note 9: This parameter is warranted by design
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TCR3UG series
10. Dropout voltage
(IOUT = 300 mA, CIN = COUT = 1 μF)
Output voltages
Symbol
0.8 V ≤ VOUT < 0.9 V
0.9 V ≤ VOUT < 1.0 V
1.0 V ≤ VOUT < 1.1 V
1.1 V ≤ VOUT < 1.2 V
1.2 V ≤ VOUT < 1.3 V
1.3 V ≤ VOUT < 1.5 V
1.5 V ≤ VOUT < 1.6 V
1.6 V ≤ VOUT < 1.8 V
VDO
1.8 V ≤ VOUT < 2.0 V
2.0 V ≤ VOUT < 2.5 V
2.5 V ≤ VOUT < 3.0 V
3.0 V ≤ VOUT < 3.6 V
3.6 V ≤ VOUT < 4.5 V
4.5 V ≤ VOUT ≤ 5.0 V
Note 10:
Typ.
Tj = 25°C
Max
(Note 10)
―
―
―
―
―
―
―
―
―
―
1025
1257
930
1157
835
1057
740
957
660
857
580
757
450
617
400
537
335
457
260
405
―
―
―
―
185
327
140
273
130
228
120
195
Min
Unit
mV
Tj = -40 to 85 °C. This parameter is warranted by design
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TCR3UG series
11. Application Note
11.1. Example of Application Circuit
CONTROL
GND
VOUT
VIN
1 μF
1 μF
CONTROL
voltage
VOUT
voltage
HIGH
ON
LOW
OFF
OPEN
OFF
The figure above shows the Example of configuration for using a Low-Dropout regulator. Insert a capacitor at VOUT and
VIN pins for stable input/output operation. (Ceramic capacitors can be used).
11.2. Power Dissipation
Board-mounted power dissipation ratings are available in the Absolute Maximum Ratings table.
Power dissipation is measured on the board condition shown below.
[The Board Condition]
Board material: Glass epoxy (FR4)
Board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm
Metal pattern ratio: a surface approximately 50 %, the reverse side approximately 50 %
Through hole: diameter 0.5 mm x 24
Power dissipation PD (mW)
1000
800
600
400
200
0
−40
0
40
80
120
Ambient temperature Ta (°C)
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TCR3UG series
11.3. Attention in Use
●
Output Capacitors
Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected
thermal features. Please consider application condition for selecting capacitors. And Toshiba recommends the ESR of ceramic
capacitor is under 10 Ω. For stable operation, we recommend over 1 μF.
●
Mounting
The long distance between IC and input output capacitor might affect phase compensation by impedance in wire and inductor.
For stable power supply, input output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need
to be large and make the wire impedance small as possible.
●
Permissible Loss
Please have enough design patterns for expected maximum permissible loss. And under consideration of ambient
temperature, input voltage, output current etc., we recommend proper dissipation ratings for maximum permissible loss; in
general maximum dissipation rating is 70 to 80 %.
●
Over current Protection and Thermal shutdown function
Over current protection and Thermal shutdown function are designed in these products, but these are not designed to
constantly ensure the suppression of the device within operation limits. Depending on the condition during actual usage, it
could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not
completely shorted out, these products might break down.
When using these products, please read through and understand the concept of dissipation for absolute maximum ratings
from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum
ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design.
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TCR3UG series
12. Representative Typical Characteristics
Output Voltage vs. Input Voltage
12.1.
VOUT = 1.2 V
VOUT = 0.8 V
1.6
CIN = 1μF, COUT = 1μF, Ta = 25℃
IOUT = 1 mA
IOUT = 1 mA
Output voltage VOUT (V)
Output voltage VOUT (V)
1
0.8
0.6
IOUT = 300 mA
0.4
0.2
1.2
0.8
IOUT = 300 mA
0.4
0
0
0
1
2
3
4
Input voltage VIN (V)
0
5
1
VOUT = 1.8 V
CIN = 1μF, COUT = 1μF, Ta = 25℃
IOUT = 1 mA
2
1.5
IOUT = 300 mA
1
2
3
4
Input voltage VIN (V)
5
VOUT = 2.8 V
3.5
Output voltage VOUT (V)
Output voltage VOUT (V)
2.5
0.5
0
CIN = 1μF, COUT = 1μF, Ta = 25℃
3
IOUT = 1 mA
2.5
2
IOUT = 300 mA
1.5
1
0.5
0
0
1
2
3
4
Input voltage VIN (V)
5
0
1
6
Output voltage VOUT (V)
CIN = 1μF, COUT = 1μF, Ta = 25℃
IOUT = 1 mA
3
IOUT = 300 mA
2
2
3
4
Input voltage VIN (V)
5
VOUT = 5.0 V
VOUT = 3.3 V
4
Output voltage VOUT (V)
CIN = 1μF, COUT = 1μF, Ta = 25℃
1
CIN = 1μF, COUT = 1μF, Ta = 25℃
5
IOUT = 1 mA
4
3
IOUT = 300 mA
2
1
0
0
0
1
2
3
4
Input voltage VIN (V)
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0
5
9
1
2
3
4
Input voltage VIN (V)
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TCR3UG series
12.2. Output Voltage vs. Output Current
VOUT = 0.8 V
100
1000
CIN = 1μF, COUT = 1μF, Ta = 25℃
Quiescent current IBON (μA)
Quiescent current IBON (μA)
1000
VOUT = 1.2 V
IOUT falling
10
1
IOUT rising
0.1
0.0001 0.001 0.01
0.1
1
Output current IOUT (mA)
10
100
1
IOUT rising
0.1
0.0001 0.001 0.01
0.1
1
Output current IOUT (mA)
CIN = 1μF, COUT = 1μF, Ta = 25℃
IOUT falling
10
1
IOUT rising
0.1
0.0001 0.001 0.01
0.1
1
Output current IOUT (mA)
10
100
1
IOUT rising
0.1
0.0001 0.001 0.01
0.1
1
Output current IOUT (mA)
1000
CIN = 1 μF, COUT = 1 μF, Ta = 25℃
IOUT falling
10
1
IOUT rising
0.1
0.0001 0.001 0.01
0.1
1
Output current IOUT (mA)
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Toshiba Electronic Devices & Storage Corporation
IOUT falling
10
VOUT = 5.0 V
Quiescent current IBON (μA)
Quiescent current IBON (μA)
100
CIN = 1μF, COUT = 1μF, Ta = 25℃
10
VOUT = 3.3 V
1000
10
VOUT = 2.8 V
1000
Quiescent current IBON (μA)
Quiescent current IBON (μA)
100
IOUT falling
10
VOUT = 1.8 V
1000
CIN = 1μF, COUT = 1μF, Ta = 25℃
10
10
100
CIN = 1μF, COUT = 1μF, Ta = 25℃
IOUT falling
10
1
IOUT rising
0.1
0.0001 0.001 0.01
0.1
1
Output current IOUT (mA)
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TCR3UG series
12.3. Quiescent Current vs. Input Voltage
VOUT = 1.2 V
VOUT = 0.8 V
1.0
CIN = 1μF, COUT = 1μF, Ta = 25℃
Quiescent current IBON (μA)
Quiescent current IBON (μA)
1.0
0.8
0.6
0.4
0.2
0.0
CIN = 1μF, COUT = 1μF, Ta = 25℃
0.8
0.6
0.4
0.2
0.0
1.5
2.5
3.5
4.5
Input voltage VIN (V)
5.5
1.5
2.5
3.5
4.5
Input voltage VIN (V)
VOUT = 1.8 V
VOUT = 2.8 V
1.0
CIN = 1μF, COUT = 1μF, Ta = 25℃
Quiescent current IBON (μA)
Quiescent current IBON (μA)
1.0
0.8
0.6
0.4
0.2
0.0
1.5
2.5
3.5
4.5
Input voltage VIN (V)
CIN = 1μF, COUT = 1μF, Ta = 25℃
0.8
0.6
0.4
0.2
0.0
5.5
1.5
2.5
3.5
4.5
Input voltage VIN (V)
1.0
CIN = 1μF, COUT = 1μF, Ta = 25℃
Quiescent current IBON (μA)
Quiescent current IBON (μA)
5.5
VOUT = 5.0 V
VOUT = 3.3 V
1.0
5.5
0.8
0.6
0.4
0.2
0.0
CIN = 1μF, COUT = 1μF, Ta = 25℃
0.8
0.6
0.4
0.2
0.0
1.5
2.5
3.5
4.5
Input voltage VIN (V)
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Toshiba Electronic Devices & Storage Corporation
5.5
1.5
2.5
3.5
4.5
5.5
Input voltage VIN (V)
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12.4. Dropout Voltage vs. Output current
VOUT = 1.2 V
VOUT = 0.8 V
CIN = 1μF, COUT = 1μF, Ta = 25℃
Dropout voltage VDO (mV)
Dropout voltage VDO (mV)
1200
800
1000
800
600
400
200
CIN = 1μF, COUT = 1μF, Ta = 25℃
600
400
200
0
0
0
100
200
Output current IOUT (mA)
300
0
CIN = 1μF, COUT = 1μF, Ta = 25℃
300
200
100
0
0
100
200
Output current IOUT (mA)
CIN = 1μF, COUT = 1μF, Ta = 25℃
200
150
100
50
0
300
0
150
CIN = 1μF, COUT = 1μF, Ta = 25℃
Dropout voltage VDO (mV)
Dropout voltage VDO (mV)
100
200
Output current IOUT (mA)
300
VOUT = 5.0 V
VOUT = 3.3 V
200
300
VOUT = 2.8 V
250
Dropout voltage VDO (mV)
Dropout voltage VDO (mV)
VOUT = 1.8 V
400
100
200
Output current IOUT (mA)
150
100
50
0
CIN = 1μF, COUT = 1μF, Ta = 25℃
120
90
60
30
0
0
100
200
300
Output current IOUT (mA)
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0
100
200
Output current IOUT (mA)
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TCR3UG series
12.5. Dropout Voltage vs. Temprature
400
CIN = 1 μF, COUT = 1 μF
900
Dropout voltage VDO (mV)
Dropout voltage VDO (mV)
1000
800
IOUT = 300 mA
700
600
500
400
300
IOUT = 150 mA
IOUT = 50 mA
200
100
CIN = 1 μF, COU = 1 μF
350
300
IOUT = 300 mA
250
200
150
IOUT = 50 mA
100
IOUT = 150 mA
50
0
0
-50
0
Temprature
Ta
50
(℃)
100
-50
0
Temprature
Ta
50
(℃)
100
VOUT = 2.8 V
Dropout voltage VDO (mV)
400
CIN = 1 μF, COUT = 1 μF
350
300
IOUT = 300 mA
250
200
IOUT = 150 mA
150
100
IOUT = 50 mA
50
0
-50
0
Temprature
50
Ta
100
(℃)
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TCR3UG series
12.6. Ripple Rejection Ratio vs. Frequency
VOUT = 0.8V
90
80
70
60
50
40
30
20
VIN = 2.5 V ,VIN ripple = 200 mVp−p
CIN = none, COUT = 1 μF
IOUT = 10 mA, Ta = 25°C
10
0
10
100
1000
90
80
70
60
50
40
30
20
10
0
10000
100000
VIN = 2.8 V ,VIN ripple = 200 mVp−p
CIN = none, COUT = 1 μF
IOUT = 10 mA, Ta = 25°C
10
Frequency f (Hz)
100
1000
10000
100000
Frequency f (Hz)
VOUT = 2.8V
100
Ripple Rejection Ratio (dB)
VOUT = 1.8V
100
Ripple Rejection Ratio (dB)
Ripple Rejection Ratio (dB)
100
90
80
70
60
50
40
30
20
10
VIN = 3.8 V ,VIN ripple = 200 mVp−p
CIN = none, COUT = 1 μF
IOUT = 10 mA, Ta = 25°C
0
10
100
1000
10000
100000
Frequency f (Hz)
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Toshiba Electronic Devices & Storage Corporation
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TCR3UG series
12.7. Load Transient Response
VOUT = 2.8V
VOUT = 2.8V
VOUT: 50 mV/div
VOUT: 200 mV/div
IOUT: 50 mA/div
IOUT: 10 mA/div
VIN = 3.8 V ,VCT = 1 V, COUT = 1 μF
50 μs/div
50 μs/div
IOUT = 1 mA ⇔ 50 mA, Ta = 25°C
VIN = 3.8 V ,VCT = 1 V, COUT = 1 μF
IOUT = 0 mA ⇔ 10 mA, Ta = 25°C
12.8. tON Response
VOUT = 2.8V
VOUT = 2.8V
VIN = 3.8 V , COUT = 1 μF
VIN = 3.8 V , COUT = 1 μF
IOUT = 300 mA, Ta = 25°C
IOUT = 0 mA, Ta = 25°C
VCT: 1V/div
VCT: 1V/div
VOUT: 2V/div
VOUT: 2V/div
IIN: 200mA/div
IIN: 200mA/div
500 μs/div
500 μs/div
12.9. tOFF Response (Auto-discharge)
VOUT = 2.8V
VOUT = 2.8V
VIN = 3.8 V , COUT = 1 μF
VIN = 3.8 V , COUT = 1 μF
IOUT = 0 mA, Ta = 25°C
IOUT = 300 mA, Ta = 25°C
VCT: 1V/div
VCT: 1V/div
VOUT: 2V/div
VOUT: 2V/div
IIN: 200mA/div
IIN: 200mA/div
500 μs/div
500 μs/div
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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Toshiba Electronic Devices & Storage Corporation
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TCR3UG series
13. Package Information
WCSP4F
Unit: mm
Weight: 0.26 mg (typ.)
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Toshiba Electronic Devices & Storage Corporation
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TCR3UG series
Land pattern dimensions for reference only
Unit: mm
0.35
0.35
0.180
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Toshiba Electronic Devices & Storage Corporation
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TCR3UG series
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