TCR3UM series
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCR3UM series
Ultra low quiescent current, Fast Load Transient 300 mA CMOS Low Dropout Regulator in ultra
small package
1. Description
The TCR3UM series are CMOS general-purpose single-output voltage
regulators with an on/off control input, featuring ultra low quiescent bias
current and low dropout voltage.
These voltage regulators are available in fixed output voltages between 0.8
V and 5.0 V and capable of driving up to 300 mA. They feature Over-current
protection, Thermal Shutdown function and Auto-discharge.
The TCR3UM series is offered in the ultra small plastic mold package
DFN4/DFN4E (1.0 mm x 1.0 mm; t 0.60 mm (max)) and has a low dropout
voltage of 196 mV (3.3 V output, IOUT = 300 mA). As small ceramic input and
output capacitors 1 μF can be used with the TCR3UM series, these devices
are ideal for portable applications that require high-density board assembly
such as cellular phones, IoT equipment and wearable devices.
BOTTOM VIEW ILLUSTRATION
DFN4/DFN4E
Weight: 1.3 mg (typ.)
2. Applications
Power IC developed for portable applications, IoT equipment and wearable devices
3. Features
•
Ultra small package DFN4/DFN4E (1.0 mm x 1.0 mm; t 0.60 mm (max)).
•
Low quiescent bias current ( IB = 0.34 μA (typ.) at IOUT = 0 mA, output voltage up to 1.5 V)
•
High Ripple rejection ratio 70 dB (typ.) at 0.8 V-output
•
Fast Load transient response -51/+36 mV at 0.8 V-output, IOUT = 1 mA ⇔ 50 mA
•
Low Dropout voltage
•
Wide range output voltage line up (VOUT = 0.8 to 5.0 V)
•
High VOUT accuracy ± 1.0 %
•
Overcurrent protection
VDO = 196 mV (typ.) at 3.3 V-output, IOUT = 300 mA
•
Thermal Shutdown function
•
Auto-discharge
(1.8 V ≤ VOUT)
•
Inrush current protection circuit
•
Pull down connection between CONTROL and GND
•
Ceramic capacitors can be used (CIN = 1 μF, COUT = 1 μF)
Start of commercial production
2018-08
© 2018-2021
Toshiba Electronic Devices & Storage Corporation
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TCR3UM series
4. Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Input voltage
VIN
-0.3 to 6.0
V
Control voltage
VCT
-0.3 to VIN + 0.3 ≤ 6.0
V
Output voltage
VOUT
-0.3 to VIN + 0.3 ≤ 6.0
V
Power dissipation
PD
420
mW
Junction temperature
Tj
150
°C
Tstg
−55 to 150
°C
Storage temperature range
(Note1)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the
operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note1:
Rating at mounting on a board
Glass epoxy (FR4) board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm
Metal pattern ratio: a surface approximately 50 %, the reverse side approximately 50 %
Through hole : diameter 0.5 mm x 24
5. Operating Ranges
Characteristics
Symbol
Rating
Input voltage
VIN
1.5 to 5.5
Control voltage
VCT
0 to VIN
V
Output voltage
VOUT
0.8 to 5.0
V
Output current
IOUT
Operating Temperature
Topr
-40 to 85
°C
COUT
≥ 1.0 μF
―
Output Capacitance
Input Capacitance
DC
300
≥ 1.0 μF
CIN
Unit
(Note 2)
(Note 3)
V
mA
―
Note 2: IOUT = 1 mA.
Please refer to Dropout Voltage (Page 13) and use it within Absolute Maximum Ratings Junction temperature and
Operating Temperature Ranges.
Note 3: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such
conditions may adversely impact product reliability and results in failures not covered by warranty.
6. Pin Assignment (top view)
VIN
CONTROL
4
3
*
1
2
VOUT
GND
*Center electrode should be connected to GND or Open
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TCR3UM series
7. List of Products Number, Output voltage and Marking
Product No.
Output voltage(V)
Auto dis-charge
Marking
TCR3UM08A
0.8
0R8
TCR3UM085A
0.85
0RA
TCR3UM09A
0.9
0R9
TCR3UM095A
0.95
0RB
TCR3UM10A
1.0
1R0
TCR3UM105A
1.05
1RC
TCR3UM11A
1.1
1R1
TCR3UM115A
1.15
1RE
TCR3UM12A
1.2
1R2
TCR3UM13A
1.3
1R3
TCR3UM135A
1.35
1RF
TCR3UM14A
1.4
1R4
TCR3UM15A
1.5
1R5
TCR3UM16A
1.6
1R6
TCR3UM175A
1.75
1RG
TCR3UM18A
1.8
1R8
TCR3UM1825A
1.825
1RH
TCR3UM185A
1.85
Yes
1RJ
TCR3UM19A
1.9
1R9
TCR3UM25A
2.5
2R5
TCR3UM26A
2.6
2R6
TCR3UM27A
2.7
2R7
TCR3UM28A
2.8
2R8
TCR3UM285A
2.85
2RK
TCR3UM29A
2.9
2R9
TCR3UM2925A
2.925
2RL
TCR3UM30A
3.0
3R0
TCR3UM31A
3.1
3R1
TCR3UM32A
3.2
3R2
TCR3UM33A
3.3
3R3
TCR3UM35A
3.5
3R5
TCR3UM36A
3.6
3R6
TCR3UM41A
4.1
4R1
TCR3UM42A
4.2
4R2
TCR3UM45A
4.5
4R5
TCR3UM50A
5.0
5R0
Top Marking (top view)
Example: TCR3UM33A (3.3 V output)
Lot code
3R3
INDEX
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TCR3UM series
8. Block Diagram
V OUT
V IN
Current Limit
Thermal
Shutdown
+
CONTROL
Control
Logic
Pull down
GND
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TCR3UM series
9. Electrical Characteristics
(Unless otherwise specified,
VIN = VOUT + 1 V (VOUT > 1.5 V), VIN = 2.5 V (VOUT ≤ 1.5V), IOUT = 50 mA, CIN = COUT = 1 μF)
Tj = -40 to 85°C
(Note 9)
Tj = 25°C
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Min
Max
VOUT < 1.8 V
-18
―
+18
―
―
mV
1.8V ≤ VOUT
-1.0
―
+1.0
―
―
%
1.5
―
5.5
1.5
5.5
V
1
15
―
―
mV
VOUT
IOUT = 50 mA
(Note 4)
VIN
IOUT = 1 mA
Line regulation
Reg･line
IOUT = 1 mA
(Note 5)
―
Load regulation
Reg･load
1 mA ≤ IOUT ≤ 300 mA
Output voltage accuracy
Input voltage
(Note 6)
―
17
30
―
―
mV
IB(ON1)
IOUT = 0 mA, VOUT ≤ 1.5V (Note 7)
―
0.34
―
―
0.58
μA
IB(ON2)
IOUT = 0 mA,
1.75 V ≤ VOUT ≤ 5 V
―
0.38
―
―
0.68
μA
―
0.03
―
―
0.16
μA
Quiescent current
Stand-by current
Unit
IB (OFF1)
VCT = 0 V, VIN = 2.5 V
IB (OFF2)
VCT = 0 V, VIN = 5.5 V
―
0.03
―
―
0.20
μA
―
0.1
―
―
―
μA
VOUT = 1.8 V
―
336
―
―
457
mV
VOUT = 3.3 V
―
196
―
―
273
mV
―
545
―
400
―
mA
IOUT = 10 mA,
10 Hz ≤ f ≤ 100 kHz, Ta = 25°C
(Note 6)
―
41
―
―
―
μVrms
IOUT = 10 mA,
f = 1 kHz, VRipple = 200 mVp-p,
Ta = 25°C (Note 6)
―
70
―
―
―
dB
IOUT = 1 mA 50 mA (Note 8)
―
-51
―
―
―
mV
IOUT = 50 mA 1 mA (Note 8)
―
+36
―
―
―
mV
−40°C ≤ Topr ≤ 85°C
―
75
―
―
―
ppm/°C
―
Control pull down current
ICT
Drop-out voltage
VDO
IOUT = 300 mA
Output current limit
ICL
VOUT = VOUT(NOM)*90%
Output noise voltage
VNO
Ripple rejection ratio
R.R.
Load transient response
⊿VOUT
Temperature coefficient
TCVO
(Note 7)
(Note 9)
Control voltage (ON)
VCT (ON)
―
1.0
―
5.5
1.0
5.5
V
Control voltage (OFF)
VCT (OFF)
―
0
―
0.4
0
0.4
V
Discharge on resistance
RSD
―
―
7
―
―
―
Ω
Thermal shutdown
temperature
TSD
(Note 9) (Note 10)
―
158
―
―
―
°C
Thermal shutdown
hysteresis
TSDH
(Note 9) (Note 10)
―
28
―
―
―
°C
Note 4: stable state with fixed IOUT condition
Note 5: VOUT ≤ 1.5 V, 2.5 V ≤ VIN ≤ 5.5 V
1.75 V ≤ VOUT ≤ 4.2 V, VOUT + 1 V ≤ VIN ≤ 5.5 V
VOUT = 4.5 V, VOUT = 5.0 V, not applicable
Note 6: VOUT = 0.8V
Note 7: except Control pull down current (ICT)
Note 8: VOUT = 0.8 V, VIN = 3.3 V
Note 9: This parameter is warranted by design
Note 10: VOUT = 0.8 V, VIN = 2.5 V
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TCR3UM series
10. Dropout voltage
(IOUT = 300 mA, CIN = COUT = 1 μF)
Output voltages
Symbol
0.8 V ≤ VOUT < 0.9 V
0.9 V ≤ VOUT < 1.0 V
1.0 V ≤ VOUT < 1.1 V
1.1 V ≤ VOUT < 1.2 V
1.2 V ≤ VOUT < 1.3 V
1.3 V ≤ VOUT < 1.5 V
1.5 V ≤ VOUT < 1.6 V
1.6 V ≤ VOUT < 1.8 V
VDO
1.8 V ≤ VOUT < 2.0 V
2.0 V ≤ VOUT < 2.5 V
2.5 V ≤ VOUT < 3.0 V
3.0 V ≤ VOUT < 3.6 V
3.6 V ≤ VOUT < 4.5 V
4.5 V ≤ VOUT ≤ 5.0 V
Note 11:
Min
―
―
―
―
―
―
―
―
―
―
―
―
―
―
Typ.
Tj = 25°C
Max
(Note 11)
1020
1257
933
1157
848
1057
760
957
667
857
580
757
462
617
420
537
336
457
292
405
216
327
196
273
174
232
149
210
Unit
mV
Tj = -40 to 85 °C. This parameter is warranted by design
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TCR3UM series
11. Application Note
11.1. Example of Application Circuit
CONTROL
GND
VOUT
VIN
1.0 μF
1.0 μF
CONTROL
voltage
Output
voltage
HIGH
ON
LOW
OFF
OPEN
OFF
The figure above shows the example of configuration for using a Low-Dropout regulator. Insert a capacitor at VOUT
and VIN pins for stable input/output operation. (Ceramic capacitors can be used.)
11.2. Power Dissipation
Board mounted power dissipation ratings for TCR3UM series are available in the Absolute Maximum Ratings table.
Power dissipation is measured on the board condition shown below.
[The Board Condition]
Board material: Glass epoxy (FR4)
Board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm
Metal pattern ratio: a surface approximately 50 %, the reverse side approximately 50 %
Through hole hall: diameter 0.5 mm x 24
Power dissipation PD
(mW)
500
400
300
200
100
0
−40
0
40
80
120
Ambient temperature Ta (°C)
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TCR3UM series
12. Attention in Use
●
Output Capacitors
Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected
thermal features. Please consider application condition for selecting capacitors. And Toshiba recommends the ESR of ceramic
capacitor is under 10 Ω. For stable operation, we recommend over 1 μF.
●
Mounting
The long distance between IC and input output capacitor might affect phase compensation by impedance in wire and inductor.
For stable power supply, input output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need
to be large and make the wire impedance small as possible.
●
Permissible Loss
Please have enough design patterns for expected maximum permissible loss. And under consideration of ambient
temperature, input voltage, output current etc., we recommend proper dissipation ratings for maximum permissible loss; in
general maximum dissipation rating is 70 to 80 %.
●
Over current Protection and Thermal shutdown function
Over current protection and Thermal shutdown function are designed in these products, but these are not designed to
constantly ensure the suppression of the device within operation limits. Depending on the condition during actual usage, it
could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not
completely shorted out, these products might break down.
When using these products, please read through and understand the concept of dissipation for absolute maximum ratings
from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum
ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design.
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TCR3UM series
13. Representative Typical Characteristics
13.1.
Output Voltage vs. Input Voltage
VOUT = 0.8 V
VOUT = 1.2 V
1.6
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
IOUT = 1 mA
Output voltage VOUT (V)
Output voltage VOUT (V)
1
0.8
0.6
IOUT = 300 mA
0.4
0.2
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
IOUT = 1 mA
1.4
1.2
1
IOUT = 300 mA
0.8
0.6
0.4
0.2
0
0
0
1
2
3
4
Input voltage VIN (V)
0
5
1
IOUT = 1 mA
Output voltage VOUT (V)
Output voltage VOUT (V)
3.5
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
2
1.5
IOUT = 300 mA
1
0.5
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
3
IOUT = 1 mA
2.5
2
IOUT = 300 mA
1.5
1
0.5
0
0
0
1
2
3
4
Input voltage VIN (V)
5
0
1
VOUT = 3.3 V
4
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
IOUT = 1 mA
3
IOUT = 300 mA
2
2
3
4
Input voltage VIN (V)
5
VOUT = 5.0 V
6
Output voltage VOUT (V)
Output voltage VOUT (V)
5
VOUT = 2.8 V
VOUT = 1.8 V
2.5
2
3
4
Input voltage VIN (V)
1
0
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
5
IOUT = 1 mA
4
3
IOUT = 300 mA
2
1
0
0
1
2
3
4
Input voltage VIN (V)
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5
0
9
1
2
3
4
Input voltage VIN (V)
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TCR3UM series
13.2. Quiescent Current vs. Output Current
VOUT = 0.8 V
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
IOUT falling
100
10
1
IOUT rising
0.1
0.0001 0.001
0.01
0.1
1
1
IOUT rising
0.1
0.0001 0.001
Quiescent current IBON (μA)
Quiescent current IBON (μA)
10
1
IOUT rising
0.1
1
100
Quiescent current IBON (μA)
Quiescent current IBON (μA)
1
IOUT rising
1
10
Output current IOUT (mA)
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10
VOUT = 5.0 V
1000
10
0.1
IOUT falling
0.1
0.0001 0.001 0.01
0.1
1
Output current IOUT (mA)
IOUT falling
0.01
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
IOUT rising
10
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
0.1
0.0001 0.001
10
1
VOUT = 3.3 V
100
1
10
Output current IOUT (mA)
1000
0.1
VOUT = 2.8 V
1000
IOUT falling
0.01
0.01
Output current IOUT (mA)
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
0.1
0.0001 0.001
IOUT falling
10
10
VOUT = 1.8 V
100
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
100
Output current IOUT (mA)
1000
VOUT = 1.2 V
1000
Quiescent current IBON (μA)
Quiescent current IBON (μA)
1000
10
100
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
IOUT falling
10
1
IOUT rising
0.1
0.0001 0.001 0.01
0.1
1
Output current IOUT (mA)
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TCR3UM series
13.3. Quiescent Current vs. Input Voltage
VOUT = 0.8 V
VOUT = 1.2 V
1.0
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
Quiescent current IBON (μA)
Quiescent current IBON (μA)
1.0
0.8
0.6
0.4
0.2
0.0
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
0.8
0.6
0.4
0.2
0.0
1.5
2.5
3.5
4.5
Input voltage VIN (V)
5.5
1.5
VOUT = 1.8 V
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
0.8
0.6
0.4
0.2
0.0
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
0.8
0.6
0.4
0.2
0.0
1.5
2.5
3.5
4.5
5.5
1.5
Input voltage VIN (V)
Quiescent current IBON (μA)
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
0.8
0.6
0.4
0.2
0.0
1.5
2.5
3.5
4.5
Input voltage VIN (V)
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Toshiba Electronic Devices & Storage Corporation
2.5
3.5
4.5
Input voltage VIN (V)
5.5
VOUT = 5.0 V
VOUT = 3.3 V
1.0
Quiescent current IBON (μA)
5.5
VOUT = 2.8 V
1.0
Quiescent current IBON (μA)
Quiescent current IBON (μA)
1.0
2.5
3.5
4.5
Input voltage VIN (V)
5.5
11
1.0
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
0.8
0.6
0.4
0.2
0.0
1.5
2.5
3.5
4.5
Input voltage VIN (V)
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TCR3UM series
13.4. Dropout Voltage vs. Output Current
VOUT = 1.2 V
VOUT = 0.8 V
CIN = 0.1 μF, COUT = 0.1 μF, Ta = 25 ℃
Dropout voltage VDO (mV)
Dropout voltage VDO (mV)
1200
800
1000
800
600
400
200
0
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
600
400
200
0
0
100
200
Output current IOUT (mA)
300
0
VOUT = 1.8 V
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
300
200
100
0
0
100
200
Output current IOUT (mA)
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
200
150
100
50
0
300
0
VOUT = 3.3 V
150
100
50
0
100
200
Output current IOUT (mA)
300
VOUT = 5.0 V
160
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
Dropout voltage VDO (mV)
Dropout voltage VDO (mV)
200
300
VOUT = 2.8 V
250
Dropout voltage VDO (mV)
Dropout voltage VDO (mV)
400
100
200
Output current IOUT (mA)
CIN = 1 μF, COUT = 1 μF, Ta = 25 ℃
120
80
40
0
0
100
200
Output current IOUT (mA)
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300
0
12
100
200
Output current IOUT (mA)
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TCR3UM series
13.5. Ripple Rejection Ratio vs. Frequency
VOUT = 0.8 V
100
90
90
Ripple Rejection Ratio (dB)
Ripple Rejection Ratio (dB)
VOUT = 1.2 V
100
80
70
60
50
40
30
20
VIN = 2.5 V, VIN ripple = 200 mVp-p
CIN = none, COUT = 1 μF
10
10
100
1000
10000
Frequency f (Hz)
70
60
50
40
30
20
VIN = 2.5 V, VIN ripple = 200 mVp-p
CIN = none, COUT = 1 μF
10
IOUT = 10 mA, Ta = 25 °C
0
80
IOUT = 10 mA, Ta = 25 °C
0
10
100000
100
90
90
80
70
60
50
40
30
20
VIN = 2.8 V, VIN ripple = 200 mVp-p
CIN = none, COUT = 1 μF
10
IOUT = 10 mA, Ta = 25 °C
0
100
1000
10000
Frequency f (Hz)
100000
100000
VOUT = 2.8 V
80
70
60
50
40
30
20
VIN = 3.8 V, VIN ripple = 200 mVp-p
CIN = none, COUT = 1 μF
10
IOUT = 10 mA, Ta = 25 °C
0
10
10
100
1000
10000
Frequency f (Hz)
100000
VOUT = 3.3V
100
Ripple Rejection Ratio (dB)
Ripple Rejection Ratio (dB)
Ripple Rejection Ratio (dB)
VOUT = 1.8V
100
100
1000
10000
Frequency f (Hz)
90
80
70
60
50
40
30
20
VIN = 4.3 V, VIN ripple = 200 mVp-p
CIN = none, COUT = 1 μF
10
IOUT = 10 mA, Ta = 25 °C
0
10
100
1000
10000
Frequency f (Hz)
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100000
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13.6. Load Transient Response
VOUT = 2.8V
VOUT = 2.8V
VOUT: 50 mV/div
VOUT: 200 mV/div
IOUT: 50 mA/div
IOUT: 10 mA/div
50 μs/div
VIN = 3.8 V ,VCT = 1 V, COUT = 1 μF
50 μs/div
IOUT = 1 mA ⇔ 50 mA, Ta = 25°C
VIN = 3.8 V ,VCT = 1 V, COUT = 1 μF
IOUT = 0 mA ⇔ 10 mA, Ta = 25°C
13.7. tON Response
VOUT = 2.8V
VOUT = 2.8V
VIN = 3.8 V , COUT = 1 μF
VIN = 3.8 V , COUT = 1 μF
IOUT = 0 mA, Ta = 25°C
IOUT = 300 mA, Ta = 25°C
VCT: 1 V/div
VCT: 1 V/div
VOUT: 2 V/div
VOUT: 2 V/div
IIN: 200 mA/div
IIN: 200 mA/div
500 μs/div
500 μs/div
13.8. tOFF Response (Auto-discharge)
VOUT = 2.8V
VOUT = 2.8V
VIN = 3.8 V , COUT = 1 μF
VIN = 3.8 V , COUT = 1 μF
IOUT = 0 mA, Ta = 25°C
IOUT = 300 mA, Ta = 25°C
VCT: 1 V/div
VCT: 1 V/div
VOUT: 2 V/div
VOUT: 2 V/div
IIN: 200 mA/div
IIN: 200 mA/div
500 μs/div
500 μs/div
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2018-2021
Toshiba Electronic Devices & Storage Corporation
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TCR3UM series
14. Package Information
14.1. DFN4
Unit: mm
0.04 mm (typ.) unevenness exists along the edges of the back electrode to increase shear after soldering.
Weight: 1.3 mg (typ.)
© 2018-2021
Toshiba Electronic Devices & Storage Corporation
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TCR3UM series
14.2. DFN4E
Unit: mm
Weight: 1.3 mg (typ.)
© 2018-2021
Toshiba Electronic Devices & Storage Corporation
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TCR3UM series
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