TCR4DG33,LF

TCR4DG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR4DG series 420 mA CMOS Low Drop-Out Regulator with inrush current protection circuit The TCR4DG series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and low inrush current. These voltage regulators are available in fixed output voltages between 1.0 V and 4.5 V and capable of driving up to 420 mA. They feature over-current protection, over-temperature protection, Inrush current protection circuit and Auto-discharge function. The TCR4DG series are offered in the ultra small plastic mold WCSP4E package WCSP4E (0.645 mm x 0.645 mm; t 0.43 mm (max)). It has a low dropout voltage of 193 mV (3.3 V output, IOUT = 420 mA) with Weight: 0.34 mg ( typ.) low output noise voltage of 38 μVrms (2.5 V output) and a load transient response of only ⊿VOUT = ±115 mV ( IOUT = 1 mA ⇔ 420 mA, COUT =1.0 μF). As small ceramic input and output capacitors can be used with the TCR4DG series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. Features • Low Drop-Out voltage VDO = 193 mV (typ.) at 3.3 V-output, IOUT = 420 mA • Low output noise voltage VNO = 38 μVrms (typ.) at 2.5 V-output, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz • Fast load transient response (⊿VOUT = ±115 mV (typ.) at IOUT = 1 ⇔ 420 mA, COUT =1.0 μF ) • High ripple rejection ( R.R = 70 dB (typ.) at 2.5 V-output, IOUT = 10 mA, f = 1 kHz ) • Over-current protection • Over-temperature protection • Inrush current protection circuit • Auto-discharge function • Pull down connection between CONTROL and GND • Ceramic capacitors can be used ( CIN = 1.0μF, COUT =1.0 μF ) • Ultra small package WCSP4E (0.645 mm x 0.645 mm ; t 0.43 mm (max)) Start of commercial production 2017-04 1 2017-05-12 TCR4DG series Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN 6.0 V Control voltage VCT -0.3 to 6.0 V Output current IOUT 420 mA Power dissipation PD 800 Operation temperature range Topr -40 to 85 °C Tj 150 °C Tstg -55 to 150 °C Junction temperature Storage temperature range (Note1) mW Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Board material: Glass epoxy(FR4) Board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5 mm x 24 Pin Assignment (Top view) 1 2 1 2 A VIN VOUT B CONTROL GND A B 2 2017-05-12 TCR4DG series List of Products Number, Output voltage and Marking Output voltage Marking Output voltage Product No. Marking Product No. (V)(typ.) (V)(typ.) TCR4DG10 1.0 A TCR4DG25 2.5 T TCR4DG105 1.05 B TCR4DG27 2.7 U TCR4DG11 1.1 C TCR4DG275 2.75 V TCR4DG115 1.15 D TCR4DG28 2.8 W TCR4DG12 1.2 E TCR4DG285 2.85 X TCR4DG125 1.25 F TCR4DG29 2.9 Y TCR4DG13 1.3 H TCR4DG30 3.0 0 TCR4DG135 1.35 J TCR4DG31 3.1 1 TCR4DG15 1.5 K TCR4DG32 3.2 2 TCR4DG175 1.75 L TCR4DG325 3.25 3 TCR4DG18 1.8 M TCR4DG33 3.3 4 TCR4DG185 1.85 N TCR4DG35 3.5 5 TCR4DG19 1.9 P TCR4DG36 3.6 6 TCR4DG23 2.3 R TCR4DG42 4.2 7 TCR4DG245 2.45 S TCR4DG45 4.5 8 Note: Please ask your local retailer about the devices with other output voltages. Top Marking (top view) Example: TCR4DG10 (1.0 V output) VOUT VIN A CONTROL GND 3 2017-05-12 TCR4DG series Electrical Characteristics (Unless otherwise specified, VIN = VOUT + 1 V, IOUT = 50 mA, CIN = 1.0 μF, COUT = 1.0 μF, Tj = 25°C) Characteristics Output voltage accuracy Input voltage Symbol Test Condition VOUT IOUT = 50 mA VIN IOUT = 1 mA (Note 2) Min Typ. Max Unit VOUT < 1.8 V -18 ― +18 mV 1.8 V ≤ VOUT -1.0 ― +1.0 % VOUT + VDO ― 5.5 V (Note 3) Line regulation Reg･line VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 1 mA ― 1 15 mV Load regulation Reg･load 1 mA ≤ IOUT ≤ 420 mA ― 6 35 mV VOUT = 1.0 V ― 65 ― VOUT = 1.8 V ― 65 ― VOUT = 2.5 V ― 68 ― VOUT = 4.5 V ― 78 125 Quiescent current IB IOUT = 0 mA Stand-by current IB (OFF) Drop-out voltage VDO VCT = 0 V IOUT = 420 mA Temperature coefficient TCVO -40°C ≤ Topr ≤ 85°C Output noise voltage VNO VIN = VOUT + 1 V, IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz, Ta = 25°C Ripple rejection ratio R.R. VIN = VOUT + 1 V, IOUT = 10 mA, f = 1 kHz, VRipple = 500 mVp-p, Ta = 25°C (Note 4) (Note 5) μA ― 0.1 1 μA ― 193 263 mV ― 75 ― ppm/°C ― 38 ― μVrms ― 70 ― dB ― ±115 ― mV (Note 5) IOUT = 1 ⇔ 420 mA, COUT = 1.0 μF Load transient response ⊿VOUT Control voltage (ON) VCT (ON) ― 1.0 ― 5.5 V Control voltage (OFF) VCT (OFF) ― 0 ― 0.4 V Note 2: Stable state with fixed IOUT condition. Note 3: Please refer to Dropout Voltage table (Page 4), and use it within the limits of absolute maximum rating Topr and Tj. Note 4: The 3.3 V output product. Dropout voltage is the voltage difference between the VIN and VOUT at which VOUT drops to 2% below its nominal value. Note 5: The 2.5 V output product. Drop-out voltage (IOUT = 420 mA, CIN = 1.0 μF, COUT = 1.0 μF, Tj = 25°C) Output voltages Min Typ. Max 1.0 V, 1.05 V ― 767 991 1.1 V, 1.15V ― 711 851 1.2 V, 1.25V ― 627 781 1.3 V ― 571 711 1.35 V ― 515 683 1.4 V ― 487 669 ― 431 571 1.8 V ≤ VOUT < 2.1 V ― 319 473 2.1 V ≤ VOUT < 2.5 V ― 277 403 2.5 V ≤ VOUT < 2.8 V ― 235 347 2.8 V ≤ VOUT < 3.2 V ― 221 291 3.2 V ≤ VOUT < 3.6 V ― 193 263 3.6 V ≤ VOUT ≤ 4.5 V ― 151 221 1.5 V ≤ VOUT < 1.8 V Symbol VDO 4 Unit mV 2017-05-12 TCR4DG series Application Note 1. Recommended Application Circuit VOUT VIN 1.0 μF 1.0 μF CONTROL GND CONTROL voltage Output voltage HIGH ON LOW OFF OPEN OFF The figure above shows the recommended configuration for using a Low-Dropout regulator. Insert a capacitor at VOUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used). 2. Power Dissipation Board-mounted power dissipation ratings for TCR4DG series are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy(FR4) Board dimension: 40mm x 40mm (both sides of board), t= 1.6mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole hall: diameter 0.5mm x 24 Power dissipation PD (mW) 1000 800 600 400 200 0 -40 0 40 80 120 Ambient temperature Ta (°C) 5 2017-05-12 TCR4DG series Attention in Use ● Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommend the ESR of ceramic capacitor is under 10 Ω. ● Mounting The long distance between IC and output capacitor might affect phase assurance by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need to be large and make the wire impedance small as possible. ● Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of surrounding temperature, input voltage, and output current etc, we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 percent. ● Over current Protection and Thermal shut down function Over current protection and Thermal shut down function are designed in these products, but these are not designed to constantly ensure the suppression of the device within operation limits. Depending on the condition during actual usage, it could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not completely shorted out, these products might be break down. When using these products, please read through and understand the concept of dissipation for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommend inserting failsafe system into the design. 6 2017-05-12 TCR4DG series Representative Typical Characteristics Quiescent Current vs. Input Voltage CIN = 1 μF, COUT = 1 μF IOUT = 0 mA 150 100 50 CIN = 1 μF, COUT = 1 μF IOUT = 0 mA 350 300 250 200 150 100 50 0 0 0 1 2 3 4 Input voltage VIN 0 5 (V) 1 Quiescent current IB (μA) CIN = 1 μF, COUT = 1 μF IOUT = 0 mA 350 300 250 200 150 100 50 0 0 1 2 3 4 Input voltage VIN 2 3 4 Input voltage VIN VOUT=2.5V 400 Quiescent current IB (μA) VOUT=1.8V 400 Quiescent current IB (μA) Quiescent current IB (μA) VOUT=1.0V 200 5 (V) VOUT=3.0V 400 CIN = 1 μF, COUT = 1 μF IOUT = 0 mA 350 300 250 200 150 100 50 0 5 0 (V) 1 2 3 4 Input voltage VIN 5 (V) Quiescent Current vs. Ambient Temperature 150 Quiescent current IB (μA) Quiescent current IB (μA) VOUT=3.0V VOUT=1.0V 150 100 50 VIN = 2.0 V CIN = 1 μF, COUT = 1 μF IOUT = 0 mA 0 -50 0 50 100 50 VIN = 4.0 V CIN = 1 μF, COUT = 1 μF IOUT = 0 mA 0 100 -50 0 50 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 7 2017-05-12 TCR4DG series Ripple Rejection Ratio vs. Frequency VOUT=1.0V (dB) 90 80 70 60 50 40 30 20 VIN = 2.0 V ,Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C 10 VOUT=1.8V 100 Ripple rejection Ripple rejection (dB) 100 90 80 70 60 50 40 30 20 VIN = 2.8 V ,Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C 10 0 0 10 100 1000 10000 100000 10 VOUT=2.5V 80 60 50 40 30 20 10 100000 VOUT=3.0V (dB) 70 10000 100 90 Ripple rejection (dB) Ripple rejection 100 1000 Frequency f (Hz) Frequency f (Hz) 90 100 70 1000 50 40 30 10 0 100 60 20 VIN = 3.5 V ,Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C 10 80 10000 VIN = 4.0 V ,Vripple = 500 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C 0 100000 10 Frequency f (Hz) 100 1000 10000 100000 Frequency f (Hz) Output Voltage vs. Output Current VOUT=1.8V VOUT=1.0V Pulse width = 1 ms VOUT (V) 5.5V Output voltage Output voltage VOUT (V) Pulse width = 1 ms VIN=2.0V 5.5V VIN=2.8V Output current IOUT (mA) Output current IOUT (mA) 8 2017-05-12 TCR4DG series VOUT=3.0V VOUT=2.5V Pulse width = 1 ms Output voltage Output voltage VOUT (V) VOUT (V) Pulse width = 1 ms 5.5V 5.5V VIN=4.0V VIN=3.5V Output current IOUT (mA) Output current IOUT (mA) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 9 2017-05-12 TCR4DG series Package Dimensions WCSP4E Unit: mm Weight: 0.34 mg ( typ.) 10 2017-05-12 TCR4DG series RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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