TCR5BM105,L3F

TCR5BM series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR5BM series 500 mA CMOS Ultra Low Dropout Regulator The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that allows ultra low dropout of 100 mV (Typ.) at IOUT = 500 mA (1.1 V output, VBIAS = 3.3 V). These voltage regulators are available in fixed output voltages between 0.8 V and 3.6 V, and capable of driving up to 500 mA. Other features include overcurrent protection, thermal shutdown, and Auto-discharge. The TCR5BM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As small ceramic input and output capacitors can be used with the TCR5BM series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. DFN5B Weight : 1.4 mg (Typ.) Features • Low dropout voltage VDO = 100 mV (Typ.) at 1.1 V output, VBIAS = 3.3 V , IOUT = 500 mA • Low stand-by current (IBIAS(OFF) = 1 μA (Max)) • Low quiescent bias current ( IBIAS(ON) = 19 μA (Typ.) at VBIAS = 5.3 V, IOUT = 0 mA ) • Wide range output voltage line up VOUT = 0.8 to 3.6 V • Overcurrent protection • Thermal shutdown • Inrush current reduction • Under voltage lockout (TCR5BMxxA products) • Auto-discharge • Pull down connection between CONTROL and GND • Ultra small package DFN5B (1.2 mm x 1.2 mm ; t 0.38 mm) Start of commercial production 2018-08 © 2018-2019 Toshiba Electronic Devices & Storage Corporation 1 2019-01-15 TCR5BM series Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Bias voltage VBIAS -0.3 to 6.0 V Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 ≤ 6.0 V Power dissipation PD 600 Junction temperature Tj -40 to 150 °C Tstg −55 to 150 °C Storage temperature range Note: (Note 1) mW Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Rating at mounting on a board (Glass epoxy board dimension : 40 mm x 40 mm (4layer)，t = 1.8 mm Metal pattern ratio : approximately 70 % each layer) Operating Ranges Characteristics Symbol Rating Unit Bias voltage VBIAS (VOUT + 1.4 ≥ 2.5) to 5.5 V Input voltage VIN VOUT + VDO to VBIAS V Control voltage VCT 0 to VBIAS V Output voltage VOUT 0.8 to 3.6 V Output current IOUT 0 to 0.5 Operation Temperature Topr −40 to 85 °C COUT ≥ 2.2 μF ― CIN ≥ 1.0 μF ― CBIAS ≥ 0.1 μF ― COUT CIN CBIAS Note 2: (Note 2) A Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. Maximum operating ranges output current specification defined as lifetime average junction temperature of +45°C where max rated DC current = lifetime average current to avoid electro migration. © 2018-2019 Toshiba Electronic Devices & Storage Corporation 2 2019-01-15 TCR5BM series Pin Assignment (top view) CONTROL VIN 4 5* 3 1 2 VOUT VBIAS *Center electrode is GND List of Products Number, Output voltage and Marking Product No. VOUT(V) (Typ.) Marking Product No. VOUT(V) (Typ.) Marking TCR5BM08A* 0.8 0N8 TCR5BM19A* 1.9 1N9 TCR5BM085A* 0.85 0NJ TCR5BM20A* 2.0 2N0 TCR5BM09A* 0.9 0N9 TCR5BM21A* 2.1 2N1 TCR5BM095A* 0.95 0NK TCR5BM22A* 2.2 2N2 TCR5BM10 1.0 1L0 TCR5BM23A* 2.3 2N3 TCR5BM10A* 1.0 1N0 TCR5BM24A* 2.4 2N4 2N5 TCR5BM105 1.05 1LA TCR5BM25A* 2.5 TCR5BM105A* 1.05 1NA TCR5BM26A* 2.6 2N6 TCR5BM11 1.1 1L1 TCR5BM27A* 2.7 2N7 TCR5BM11A* 1.1 1N1 TCR5BM28A* 2.8 2N8 TCR5BM115A* 1.15 1NB TCR5BM285A* 2.85 2NJ TCR5BM12 1.2 1L2 TCR5BM29A* 2.9 2N9 TCR5BM12A* 1.2 1N2 TCR5BM295A* 2.95 2NK TCR5BM125A* 1.25 1NC TCR5BM30A* 3.0 3N0 TCR5BM13A* 1.3 1N3 TCR5BM31A* 3.1 3N1 TCR5BM14A* 1.4 1N4 TCR5BM32A* 3.2 3N2 TCR5BM15A* 1.5 1N5 TCR5BM33A* 3.3 3N3 TCR5BM16A* 1.6 1N6 TCR5BM34A* 3.4 3N4 TCR5BM17A* 1.7 1N7 TCR5BM35A* 3.5 3N5 TCR5BM18A* 1.8 1N8 TCR5BM36A* 3.6 3N6 * Please contact your local Toshiba representative if you are interested in products with * sign TCR5BMxxA products have under voltage lockout function. Top Marking (top view) Example: TCR5BM10 (1.0 V output) 1L0 Lot code INDEX © 2018-2019 Toshiba Electronic Devices & Storage Corporation 3 2019-01-15 TCR5BM series • Block Diagram VOUT VIN Under *Option voltage VBIAS lockout Thermal shutdown + - Current Limit CONTROL Control Logic Pull down GND * Under voltage lockout is applied TCR5BMxxA products. © 2018-2019 Toshiba Electronic Devices & Storage Corporation 4 2019-01-15 TCR5BM series Electrical Characteristics (Unless otherwise specified, VBIAS = 3.3 V or VOUT + 1.7 V whichever is greater, VIN = VOUT + 0.5 V, CIN = 1.0 μF, COUT = 2.2 μF, CBIAS = 0.1 μF) Tj = -40 to 85°C (Note 8) Tj = 25°C Characteristics Symbol Test Condition Min Output voltage accuracy VOUT VOUT < 1.8 V IOUT = 50 mA (Note 3) 1.8 V ≤ VOUT Typ. Max Min Unit Max -18 ― +18 ― ― mV -1.0 ― +1.0 ― ― % ― 0.1 ― ― ― mV ― 7 ― ― ― mV Line regulation Reg･line VOUT + 0.5 V ≤ VIN ≤ 5.5 V, IOUT = 1 mA Load regulation Reg･load 1 mA ≤ IOUT ≤ 500 mA Quiescent current (Note 4) IBIAS (ON) IOUT = 0 mA, VBIAS current ― 19 ― ― 36 IIN (ON) IOUT = 0 mA, VIN current ― 3 ― ― 6 IBIAS (OFF) VCT = 0 V, VBIAS current ― 0.1 ― ― 1.0 μA VCT = 0 V, VIN current ― ― 0.5 ― ― μA ― 0.1 ― ― ― μA IOUT = 500 mA, VBIAS = 3.3 V VOUT = 1.1 V (Note 6) ― 100 ― ― 140 mV Stand-by current IIN (OFF) Control pull down current ICT Dropout voltage VDO (Note 5) ― μA Under voltage lockout (Note 9) VUVLO VIN voltage ― 0.6 ― ― 0.75 V Temperature coefficient TCVO −40°C ≤ Topr ≤ 85°C ― 70 ― ― ― ppm/°C Output noise voltage VNO VBIAS = 3.3 V, VIN = VOUT + 0.5 V IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz (Note 7) ― 40 ― ― ― μVrms Ripple rejection ratio R.R. VBIAS = 3.3 V, VIN = VOUT + 1 V IOUT = 10 mA, f = 1 kHz (Note 7) VIN Ripple = 200 mVp-p ― 98 ― ― ― dB IOUT = 1 mA to 500 mA (Note 5) ― -60 ― ― ― IOUT = 500 mA to 1 mA (Note 5) ― +60 ― ― ― Load transient response ∆VOUT mV Control voltage (ON) VCT (ON) ― 0.9 ― VBIAS 1.0 VBIAS V Control voltage (OFF) VCT (OFF) ― 0 ― 0.4 0 0.4 V Current limit ICL ― ― 900 ― 550 ― mA Output discharge on resistance RSD ― ― 10 ― ― ― Ω Note 3: Note 4: Note 5: Note 6: Stable state with fixed IOUT condition Except Control pull down current The 1.0 V output product VDO = VIN1 - (VOUT1 x 0.97) VOUT1 is the output voltage when VIN = VOUT + 0.5 V. VIN1 is the input voltage at which the output voltage becomes 97% of VOUT1 after gradually decreasing the input voltage. Note 7: The 0.8 V output product Note 8: This parameter is warranted by design. Note 9: Under voltage lockout is applied TCR5BMxxA products. © 2018-2019 Toshiba Electronic Devices & Storage Corporation 5 2019-01-15 TCR5BM series Dropout voltage ( CIN = 1.0 μF, COUT = 2.2 μF, CBIAS = 0.1 μF, Tj = 25°C) IOUT = 500 mA Output voltages VBIAS input voltage Min Typ. Max (Note 10) Unit 0.8 V, 0.85 V 3.3 V ― 90 125 mV 0.9 V, 0.95 V 3.3 V ― 95 130 mV 1.0 V 3.3 V ― 95 135 mV 1.05 V, 1.1 V 3.3 V ― 100 140 mV 1.15 V 3.3 V ― 100 145 mV 1.2 V 3.3 V ― 105 150 mV 1.25 V 3.3 V ― 110 155 mV 1.3 V 3.3 V ― 110 160 mV 1.4 V 3.3 V ― 120 170 mV 1.5 V 3.3 V ― 125 190 mV 1.6 V 3.3 V ― 140 215 mV 1.7 V ≤ VOUT ≤ 1.9 V VOUT + 1.7 V ― 135 210 mV 2.0 V, 2.1 V VOUT + 1.7 V ― 135 205 mV 2.2 V ≤ VOUT ≤ 2.7 V VOUT + 1.7 V ― 135 200 mV 2.8 V ≤ VOUT ≤ 3.6 V VOUT + 1.7 V ― 130 195 mV Note 10: Tj = -40 to 85 °C This parameter is warranted by design © 2018-2019 Toshiba Electronic Devices & Storage Corporation 6 2019-01-15 TCR5BM series • Application Note 1. Example of Application Circuit VBIAS CONTROL ON/OFF VBIAS 0.1 μF GND VIN 1.0 μF CONTROL Output voltage voltage HIGH ON LOW OFF OPEN OFF VOUT 2.2 μF CL RL LOAD The figure above shows the Example of configuration for using a Low dropout regulator. Insert a capacitor at VIN, VOUT and VBIAS pins for stable input/output operation. (Ceramic capacitors can be used). 2. Power Dissipation Board-mounted power dissipation ratings for TCR5BM series are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown in below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40 mm x 40 mm (4layer)，t = 1.8 mm Metal pattern ratio: approximately 70 % each layer © 2018-2019 Toshiba Electronic Devices & Storage Corporation 7 2019-01-15 TCR5BM series Attention in Use ● Capacitors(Output, Input, and Bias Capacitor) Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. For stable operation, please use over 1.0 μF input capacitor, 0.1 μF bias capacitor and 2.2 μF output ceramic capacitor. ● Recommending for Control Pin Operation This device is optimized to operate the best performance when turn on and off with control pin. Especially the rush current and bias current can be suppressed by using control pin after applying VIN and VBIAS. TCR5BMxxA products have VIN under voltage lockout function, bias current is suppressed at low VIN even when VBIAS and VCT are applied. ● Mounting The long distance between IC and output capacitor might affect phase compensation by impedance in wire and inductor. For stable power supply, output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need to be large and make the wire impedance small as possible. ● Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of ambient temperature, input voltage, and output current etc, we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 percent. ● Overcurrent Protection and Thermal shutdown Overcurrent protection and Thermal shutdown are designed in these products, but these are not designed to constantly ensure the suppression of the device within operation limits. Depending on the condition during actual usage, it could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not completely shorted out, these products might break down. When using these products, please read through and understand the concept of dissipation for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design. © 2018-2019 Toshiba Electronic Devices & Storage Corporation 8 2019-01-15 TCR5BM series Package Dimensions DFN5B Unit: mm Weight : 1.4 mg (Typ.) © 2018-2019 Toshiba Electronic Devices & Storage Corporation 9 2019-01-15 TCR5BM series Land pattern dimensions for reference only DFN5B Unit: mm 0.18 1.5 0.8 C0.18 0.2 45° 0.45 0.63 0.3 © 2018-2019 Toshiba Electronic Devices & Storage Corporation 10 2019-01-15 TCR5BM series RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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