TCV7113F(TE12L,Q)

TCV7113F TOSHIBA CMOS Integrated Circuit Silicon Monolithic TCV7113F Buck DC-DC Converter IC The TCV7113F is a single-chip buck DC-DC converter IC. The TCV7113F contains high-speed and low-on-resistance power MOSFETs to achieve synchronous rectification using an external low-side MOSFET, or rectification using an external diode. Because of the pulse skip operation, it is a highly effective product in a wide range of the output current. Features • • • • • • • • • • • • • HSON8-P-0505-1.27 Enables up to 6.5A (@ VIN = 5V) / 6A (@ VIN = 3.3V) of load Weight: 0.068 g (typ.) current (IOUT) with a minimum of external components. High efficiency: η = 95% (typ.) (@VIN = 5V, VOUT = 3.3V, IOUT = 2A) (when using the SSM6K411TU+CRS30I30A as a low-side device) Because of the pulse skip operation, it is a highly effective product in a wide range of the output current. Operating voltage range: VIN = 2.7V to 5.6V Low ON-resistance: RDS (ON) = 0.08Ω (high-side) typical (@VIN = 5V, Tj = 25°C) Oscillation frequency: fOSC = 1000kHz (typ.) Feedback voltage: VFB = 0.8V ± 1% (@ Tj = 0 to 85 °C) Incorporates an N-channel MOSFET driver for synchronous rectification Uses internal phase compensation to achieve high efficiency with a minimum of external components. Allows the use of a small surface-mount ceramic capacitor as an output filter capacitor. Housed in a small surface-mount package (SOP Advance) with a low thermal resistance. Soft-start time adjustable by an external capacitor Overcurrent protection (OCP) with latch function Part Marking Pin Assignment Part Number (or abbreviation code) LX LSG EN 7 6 8 VFB 5 Lot No. TCV 7113F The dot (•) on the top surface indicates pin 1. 1 2 3 4 VIN1 VIN2 SS GND The lot number consists of three digits. The first digit represents the last digit of the year of manufacture, and the following two digits indicates the week of manufacture between 01 and either 52 or 53. Manufacturing week code (The first week of the year is 01; the last week is 52 or 53.) Manufacturing year code (last digit of the year of manufacture) This product has a MOS structure and is sensitive to electrostatic discharge. Handle with care. The product(s) in this document (“Product”) contain functions intended to protect the Product from temporary small overloads such as minor short-term overcurrent, or overheating. The protective functions do not necessarily protect Product under all circumstances. When incorporating Product into your system, please design the system (1) to avoid such overloads upon the Product, and (2) to shut down or otherwise relieve the Product of such overload conditions immediately upon occurrence. For details, please refer to the notes appearing below in this document and other documents referenced in this document. Start of commercial production 2011-01 1 2013-11-01 TCV7113F Ordering Information Part Number Shipping TCV7113F (TE12L, Q) Embossed tape (3000 units per reel) Block Diagram VIN2 VIN1 Current detection Oscillator Slope Compensation Under voltage lockout Control logic Driver LX Constant-current source (8 μA) VFB Short-Circuit Protection Error amplifier Phase + compensation SS EN + - LSG + Soft Start - Ref. Voltage (0.8 V) GND Pin Description Pin No. Symbol 1 VIN1 2 VIN2 Description Input pin for the output section This pin is placed in the standby state if VEN = L. Standby current is 10μA or less. Input pin for the control section This pin is placed in the standby state if VEN = L. Standby current is 10μA or less. Soft-start pin 3 SS 4 GND 5 VFB When the SS input is left open, the soft-start time is 1ms (typ.). The soft-start time can be adjusted with an external capacitor. The external capacitor is charged from a 8μA (typ.) constant-current source, and the reference voltage of the error amplifier is regulated between 0 V and 0.8 V. The external capacitor is discharged when EN = L and in case of undervoltage lockout or thermal shutdown. Ground pin Feedback pin This input is fed into an internal error amplifier with a reference voltage of 0.8V (typ.). Enable pin 6 EN 7 LSG 8 LX When EN ≥ 1.5V (@ VIN = 5V), the internal circuitry is allowed to operate and thus enable the switching operation of the output section. When EN ≤ 0.5V (@ VIN = 5V), the internal circuitry is disabled, putting the TCV7113F in Standby mode. Standby current is 10 μA or less. This pin has an internal pull-down resistor of approx. 500kΩ. Gate drive pin for the low-side switch Switch pin This pin is connected to high-side P-channel MOSFET. 2 2013-11-01 TCV7113F Absolute Maximum Ratings (Ta = 25°C) (Note) Characteristics Symbol Rating Unit Input pin voltage for the output section(Note 1) VIN1 −0.3 to 7 V Input pin voltage for the control section(Note 1) VIN2 −0.3 to 7 V Soft-start pin voltage(Note 1) VSS −0.3 to 7 V Feedback pin voltage(Note 1) VFB −0.3 to 7 V Enable pin voltage(Note 1) VEN −0.3 to 7 V VEN-VIN2 VEN – VIN2 < 0.3 V VLSG −0.3 to 7 V Switch pin voltage(Note 2) VLX −0.3 to 7 V Switch pin current ILX −7.8 A Power dissipation(Note 3) PD 2.2 W Tjopr −40 to125 °C Tj 150 °C Tstg −55 to150 °C VEN – VIN2 voltage difference LSG pin voltage(Note 1) Operating junction temperature Junction temperature(Note 4) Storage temperature Thermal Resistance Characteristics Characteristics Symbol Max Unit Thermal resistance, junction to ambient Rth (j-a) 44.6 (Note 3) °C/W Thermal resistance, junction to case (Tc=25℃) Rth (j-c) 4.17 °C/W Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) Note 1: Using this product continuously may cause a decrease in the reliability significantly even if the operating conditions are within the absolute maximum ratings. Set each pin voltage less than 5.6V taking into consideration the derating. Note 2: The switch pin voltage (VLX) doesn’t include the peak voltage generated by TCV7113F’s switching. A negative voltage generated in dead time is permitted among the switch pin current (ILX). Note 3: Glass epoxy board FR-4 25.4 × 25.4 × 0.8 (Unit: mm) Single-pulse measurement: pulse width t=10(s) Note 4: The TCV7113F may enter into thermal shutdown at the rated maximum junction temperature. Thermal design is required to ensure that the rated maximum operating junction temperature, Tjopr, will not be exceeded. 3 2013-11-01 TCV7113F Electrical Characteristics (Tj = 25°C, VIN1 = VIN2 = 2.7V to 5.6 V, unless otherwise specified) Characteristics Operating input voltage Operating current Symbol EN threshold voltage EN input current ⎯ Typ. Max Unit 2.7 ⎯ 5.6 V VIN1 = VIN2 = VEN = VFB = 5V ⎯ 580 850 μA VOUT(OPR) VEN = VIN1 = VIN2 0.8 ⎯ ⎯ V IIN(STBY) 1 VIN1 = VIN2 = 5V, VEN = 0V VFB = 0.8V ⎯ ⎯ 10 IIN(STBY) 2 VIN1 = VIN2 = 3.3 V, VEN = 0 V VFB = 0.8V ⎯ ⎯ 10 ILEAK(H) VIN1 = VIN2 = 5V, VEN = 0V VFB = 0.8V, VLX = 0V ⎯ ⎯ 10 VIH(EN) 1 VIN1 = VIN2 = 5V 1.5 ⎯ ⎯ VIH(EN) 2 VIN1 = VIN2 = 3.3V 1.5 ⎯ ⎯ VIL(EN) 1 VIN1 = VIN2 = 5V ⎯ ⎯ 0.5 VIL(EN) 2 VIN1 = VIN2 = 3.3V ⎯ ⎯ 0.5 IIH(EN) 1 VIN1 = VIN2 = 5V, VEN = 5V 6 ⎯ 13 IIH(EN) 2 VIN1 = VIN2 = 3.3V, VEN = 3.3V 4 ⎯ 9 Standby current High-side switch leakage current Min VIN(OPR) IIN Output voltage range Test Condition μA VFB1 VIN1 = VIN2 = 5V, VEN = 5V Tj = 0 to 85℃ 0.792 0.8 0.808 VFB2 VIN1 = VIN2 = 3.3V, VEN = 3.3V Tj = 0 to 85℃ 0.792 0.8 0.808 VFB input voltage μA V μA V IFB VIN1 = VIN2 = 2.7V to 5.6V VFB = VIN2 −1 ⎯ 1 RDS(ON)(H) 1 VIN1 = VIN2 = 5V, VEN = 5V ILX = −1.5 A ⎯ 0.08 ⎯ RDS(ON)(H) 2 VIN1 = VIN2 = 3.3V, VEN = 3.3V ILX = −1.5 A ⎯ 0.1 ⎯ On-state resistance of high-side transistor connected to the LSG pin RLSG(ON)(H) VIN1 = VIN2 = 5V ⎯ 0.9 ⎯ On-state resistance of low-side transistor connected to the LSG pin RLSG(ON)(L) VIN1 = VIN2 = 5V ⎯ 0.6 ⎯ VIN1 = VIN2 = VEN = 5V 800 1000 1200 kHz VFB input current High-side switch on-state resistance μA Ω Ω Oscillation frequency fOSC Internal soft-start time tSS VIN1 = VIN2 = 5V, IOUT = 0A, Measured between 0% and 90% points at VOUT. 0.5 1 1.5 ms External soft-start charge current ISS VIN1 = VIN2 = 5V, VEN = 5V -5 -8 -11 μA Dmax VIN1 = VIN2 = 2.7V to 5.6V ⎯ ⎯ 100 % TSD VIN1 = VIN2 = 5V ⎯ 150 ⎯ ΔTSD VIN1 = VIN2 = 5V ⎯ 15 ⎯ High-side switch duty cycle Detection Thermal shutdown temperature (TSD) Hysteresis Undervoltage lockout (UVLO) Detection voltage VUV VEN = VIN1 = VIN2 2.35 2.45 2.6 Recovery voltage VUVR VEN = VIN1 = VIN2 2.45 2.55 2.7 Hysteresis ΔVUV VEN = VIN1 = VIN2 ⎯ 0.1 ⎯ ILIM1 VIN1 = VIN2 = 5V, VOUT = 2V 7.3 8.5 ⎯ ILIM2 VIN1 = VIN2 = 3.3V, VOUT = 2V 6.8 8.0 ⎯ ILSON VIN1 = VIN2 = 5V, VOUT = 2V ⎯ 1.1 ⎯ ΔILSON VIN1 = VIN2 = 5V, VOUT = 2V ⎯ 0.35 ⎯ LX current limit Synch/Non-Synch LX peak current Switchable current Hysteresis °C V A A OCP latch detection voltage VLOC VIN1 = VIN2 = 5V ⎯ 0.3 ⎯ V OCP latch detection time tLOC VIN1 = VIN2 = 5V, VFB = 0.2V ⎯ 2 ⎯ ms 4 2013-11-01 TCV7113F Note on Electrical Characteristics The test condition Tj = 25°C means a state where any drifts in electrical characteristics incurred by an increase in the chip’s junction temperature can be ignored during pulse testing. Application Circuit Examples Figure 1 shows a typical application circuit using a low-ESR electrolytic or ceramic capacitor for COUT. When Using the TCV7113F with an External Low-Side MOSFET: VIN VOUT L VIN1 VIN2 EN Lx RFB1 VFB EN TCV7113F SS CIN D1 LSG CC COUT Q1 GND RFB2 CSS GND GND When Using the TCV7113F with an External Schottky Barrier Diode: VOUT L VIN VIN2 EN VIN1 Lx RFB1 VFB EN CIN CC SS TCV7113F LSG RS COUT D2 GND CS CSS RFB2 GND GND Figure 1 TCV7113F Typical Application Circuit Examples Component values (reference value@ VIN = 5V, VOUT = 3.3V, Ta = 25°C) Q1: Low-side FET (N-channel MOSFET: SSM6K411TU manufactured by Toshiba Corporation) D1: Low-side Schottky barrier diode (Schottky barrier diode: CRS30I30A manufactured by Toshiba Corporation) D2: Low-side Schottky barrier diode (Schottky barrier diode: CLS01 manufactured by Toshiba Corporation) CIN: Input filter capacitor = 22μF (ceramic capacitor: GRM21BB30J226M manufactured by Murata Manufacturing Co., Ltd.) COUT: Output filter capacitor = 22μF (ceramic capacitor: GRM21BB30J226M manufactured by Murata Manufacturing Co., Ltd.) CC: Decoupling capacitor = 1μF (ceramic capacitor: GRM188B11A105K manufactured by Murata Manufacturing Co., Ltd.) RFB1: Output voltage setting resistor = 7.5kΩ RFB2: Output voltage setting resistor = 2.4kΩ RS: Snubber resistor = 4.7Ω CS: Snubber capacitor = 220pF(ceramic capacitor: GRM1552C1H221J manufactured by Murata Manufacturing Co., Ltd.) L: Inductor = 1μH (VLM10555T-1R2M100-3 or CLF7045T-1R0N manufactured by TDK-EPC Corporation, DS85LCB B1135AS-1R0N or DG8040C 1267AY-1R0N manufactured by TOKO, INC) CSS is a capacitor for adjusting the soft-start time. 5 2013-11-01 TCV7113F Examples of Component Values (For Reference Only) Output Voltage Setting VOUT Inductance L Input Capacitance CIN Output Capacitance COUT Feedback Resistor RFB1 Feedback Resistor RFB2 1.0 V 1 μH 44 μF 66 μF 7.5 kΩ 30 kΩ 1.2 V 1 μH 44 μF 66 μF 7.5 kΩ 15 kΩ 1.51 V 1 μH 44 μF 66 μF 16 kΩ 18 kΩ 1.8 V 1 μH 44 μF 66 μF 15 kΩ 12 kΩ 2.5 V 1 μH 44 μF 44 μF 5.1 kΩ 2.4 kΩ 3.3 V 1 μH 44 μF 44 μF 7.5 kΩ 2.4 kΩ Component values need to be adjusted, depending on the TCV7113F’s I/O conditions and the board layout. Application Notes Inductor Selection The inductance required for inductor L can be calculated as follows: VIN: Input voltage (V) VIN − VOUT VOUT VOUT: Output voltage (V) ···················(1) L= ⋅ fOSC ⋅ ΔIL VIN fOSC: Oscillation frequency = 1000kHz (typ.) ΔIL: Inductor ripple current (A) *: Generally, ΔIL should be set to approximately 20% of the maximum output current. Since the maximum output current of the TCV7113F is 6.5A, ΔIL should be 1.3A or so. The inductor should have a current rating greater than the peak output current of 7.2A. If the inductor current rating is exceeded, the inductor becomes saturated, leading to an unstable DC-DC converter operation. L= = VIN − VOUT VOUT ⋅ fOSC ⋅ ΔIL VIN 5 V − 3.3 V 3.3 V ⋅ 1000kHz ⋅ 1.3A 5 V ΔIL When VIN = 5V and VOUT = 3.3V, the required inductance can be calculated as follows. Be sure to select an appropriate inductor, taking the input voltage range into account. IL 0 T= = 0.86 μH V TON = Τ ⋅ OUT VIN 1 fosc Figure 2 Inductor Current Waveform Setting the Output Voltage A resistive voltage divider is connected as shown in Figure 3 to set the output voltage; it is given by Equation 2 based on the reference voltage of the error amplifier (0.8V typ.), which is connected to the Feedback pin, VFB. RFB1 should be up to 30kΩ or so, because an extremely large-value RFB1 incurs a delay due to parasitic capacitance at the VFB pin. It is recommended that resistors with a precision of ±1% or higher be used for RFB1 and RFB2. LX VFB RFB2 ⎛ ⎞ R = 0.8 V × ⎜⎜1 + FB1 ⎟⎟ ···············(2) R FB2 ⎠ ⎝ VOUT RFB1 ⎛ ⎞ R VOUT = VFB ⋅ ⎜⎜1 + FB1 ⎟⎟ R FB2 ⎠ ⎝ Figure 3 Output Voltage Setting Resistors 6 2013-11-01 TCV7113F Output Filter Capacitor Selection Use a low-ESR electrolytic or ceramic capacitor as the output filter capacitor. Since a capacitor is generally sensitive to temperature, choose one with excellent temperature characteristics. When the output voltage exceeds 2V, the capacitance should be 40μF or greater for applications. Meanwhile 60μF or greater capacitance is desirable when the output voltage is less than 2V. The capacitance should be set to an optimal value that meets the system’s ripple voltage requirement and transient load response characteristics. The phase margin tends to decrease as the output voltage is getting low. Enlarge a capacitance for output flatness when phase margin is insufficient, or the transient load response characteristics cannot be satisfied. Since the ceramic capacitor has a very low ESR value, it helps reduce the output ripple voltage; however, because the ceramic capacitor provides less phase margin, it should be thoroughly evaluated. Rectifier Selection A low-side switch or Schottky barrier diode should be externally connected to the TCV7113F. ・When using the TCV7113F with an external Low-side MOSFET(Synch/Non-Synch). The gating signal on low side MOSFET is turned off to improve the efficiency at a light load. When N-channel MOSFET and SBD are connected with the low side switch in parallel, the efficiency at a light load is improved. It is recommended that an N-channel MOSFET SSM6K411TU or equivalent be on as a low-side switch. SSM6K411TU connects in parallel and uses SBD. It is recommended that an SBD CRS30I30A or equivalent be on as a SBD. An N-channel MOSFET and SBD of a different type can also be used in parallel. However, if the switching speed of the external MOSFET is low, a shoot-through current may flow due to the simultaneous conduction of high-side and low-side switches, leading to device failure. Thus, observe the waveform at the LX pin while operating the TCV7113F with a current close to the rated value to make sure that there is a dead time (the period between the time when the low-side switch is turned off and the high-side switch is turned on) of more than 10ns. Thorough evaluation is required to ensure that the TCV7113F provides an appropriate dead time even when in the end-product environment. Please use the product of ratings of 1A or more in average order current for SBD used in parallel. It tends for the light load efficiency to be improved when the product with small forward voltage is used. However, efficiency might decrease because of the rise of the ambient temperature and an increase in the backward current by self-generation of heat. Please execute an enough evaluation. ・When using the TCV7113F with an external Schottky barrier diode (Non-Synch). When you use only Schottky barrier diode, the CLS01 is recommended to be used. Using a Schottky barrier diode tends to lead to a large voltage overshoot on the LX pin. Thus, a series RC filter consisting of a resistor of RS = 4.7Ω and a capacitor of CS = 220pF should be connected in parallel with the Schottky barrier diode. Power loss of a Schottky barrier diode tends to increase due to an increased reverse current caused by the rise in ambient temperature and self-heating due to a supplied current. The rated current should therefore be derated to allow for such conditions in selecting an appropriate diode. Soft-Start Feature The TCV7113F has a soft-start feature. If the SS pin is left open, the soft-start time, tSS, for VOUT defaults to 1ms (typ.) internally. The soft-start time can be extended by adding an external capacitor (CSS) between the SS and GND pins. The soft-start time can be calculated as follows: t SS2 = 0.1 ⋅ CSS ·········································(3) tSS2: CSS: Soft-start time (in seconds) when an external capacitor is connected between SS and GND. Capacitor value (μF) The soft-start feature is activated when the TCV7113F exits the undervoltage lockout (UVLO) state after power-up and when the voltage at the EN pin has changed from logic low to logic high. 7 2013-11-01 TCV7113F Overcurrent Protection（OCP） TCV7113F has an overcurrent protection with latch function. When a peak current of LX pin exceeds a ILIM = 8.5A (typ.)@VIN = 5V, ON time of high-side switch (internal) is limited. When OCP is in operation, and VFB input voltage drops below latch detection voltage VLOC = 0.3V (typ.) for more than latch detection time tLOC = 2ms (typ.), TCV7113F will halt the output voltage and this state is latched. When the EN pin level changes from high to low, or the input voltage becomes under VUV = 2.45V (typ.), releases the latch. While soft-start feature is in operation, OCP does not operate. In the condition with low input voltage, the current limitation value tends to decrease. In the condition of less than VIN = 3.8V, please use it below output current IOUT = 6.0A (max). ILIM =8.5A (typ.) ILX (peak) VFB VFB =0.8V (typ.) VLOC =0.3V (typ.) Overcurrent period tLOC =2ms(typ.) Output voltage stop Figure 4 Overcurrent Protection Operation Undervoltage Lockout (UVLO) The TCV7113F has undervoltage lockout (UVLO) protection circuitry. The TCV7113F does not provide output voltage (VOUT) until the input voltage (VIN2) has reached VUVR = 2.55V (typ.). UVLO has hysteresis of 0.1V (typ.). After the switch turns on, if VIN2 drops below VUV = 2.45V (typ.), UVLO shuts off the switch at VOUT. Undervoltage lockout recovery voltage VUVR VIN2 Undervoltage lockout detection voltage VUV Hysteresis: ΔVUV GND Switching operation starts VOUT GND Switching operation stops Soft start Figure 5 Undervoltage Lockout Operation 8 2013-11-01 TCV7113F Thermal Shutdown (TSD) The TCV7113F provides thermal shutdown. When the junction temperature continues to rise and reaches TSD = 150°C (typ.), the TCV7113F goes into thermal shutdown and shuts off the power supply. TSD has a hysteresis of about 15°C (typ.). The device is enabled again when the junction temperature has dropped by approximately 15°C from the TSD trip point. The device resumes the power supply when the soft-start circuit is activated upon recovery from TSD state. Thermal shutdown is intended to protect the device against abnormal system conditions. It should be ensured that the TSD circuit will not be activated during normal operation of the system. TSD detection temperature: TSD Recovery from TSD Hysteresis: ΔTSD Tj 0 Switching operation starts VOUT GND Switching operation stops Soft start Figure 6 Thermal Shutdown Operation Usage Precautions • The input voltage, output voltage, output current and temperature conditions should be considered when selecting capacitors, inductors and resistors. These components should be evaluated on an actual system prototype for best selection. • Parts of this product in the surrounding are examples of the representative, and the supply might become impossible. Please confirm latest information when using it. • External components such as capacitors, inductors and resistors should be placed as close to the TCV7113F as possible. • The TCV7113F has an ESD diode between the EN and VIN2 pins. The voltage between these pins should satisfy VEN − VIN2 < 0.3V. • Add a decoupling capacitor (CC) of 0.1μF to 1μF between the GND and VIN2 pins. To achieve stable operation, also insert a resistor of about 100Ω between the VIN2 and VIN1 pins to reduce the ripple voltage at the VIN2 pin. • The minimum programmable output voltage is 0.8V (typ.). If the difference between the input and output voltages is small, the output voltage might not be regulated accurately and fluctuate significantly. • GND pin is connected with the back of IC chip and serves as the heat radiation pin. Secure the area of a GND pattern as large as possible for greater of heat radiation. • The overcurrent protection circuits in the Product are designed to temporarily protect Product from minor overcurrent of brief duration. When the overcurrent protective function in the Product activates, immediately cease application of overcurrent to Product. Improper usage of Product, such as application of current to Product exceeding the absolute maximum ratings, could cause the overcurrent protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate. • The thermal shutdown circuits in the Product are designed to temporarily protect Product from minor overheating of brief duration. When the overheating protective function in the Product activates, immediately correct the overheating situation. Improper usage of Product, such as the application of heat to Product exceeding the absolute maximum ratings, could cause the overheating protection circuit not to operate properly and/or damage Product permanently even before the protection circuit starts to operate. 9 2013-11-01 TCV7113F Typical Performance Characteristics IIN – Tj IIN – VIN 800 (μA) IIN 600 Operating current Operating current IIN (μA) 800 400 200 VEN = VFB = VIN Tj = 25°C 600 400 200 VEN = VIN = 5 V VFB = VIN 0 0 0 2 4 Input voltage VIN -50 6 -25 50 75 Tj 125 EN threshold voltage VIH(EN), VIL(EN) (V) VIN = 5V IIN 600 400 200 1.5 VIH(EN) 1 VIL(EN) 0.5 VEN = VIN = 3.3V VFB = VIN 0 0 −50 −25 0 25 50 Junction temperature 100 75 Tj -50 125 (°C) -25 0 25 75 50 Junction temperature VIH(EN), VIL(EN) – Tj 2 Tj 100 125 (°C) IIH(EN) – VEN 20 VIN = 5.6V VIN = 3.3V Tj = 25°C 16 1.5 EN input current IIH(EN) (μA) EN threshold voltage VIH(EN), VIL(EN) (V) 100 (°C) 2 800 (μA) 25 VIH(EN), VIL(EN) – Tj IIN – Tj Operating current 0 Junction temperature (V) VIH(EN) 1 VIL(EN) 0.5 12 8 4 0 0 -50 -25 0 25 50 Junction temperature 75 Tj 100 125 0 1 2 3 EN input voltage (°C) 10 4 VEN 5 6 (V) 2013-11-01 TCV7113F IIH(EN) – Tj VUV, VUVR – Tj 20 2.6 VIN = 5V VEN = 5V Under voltage lockout voltageVUV,VUVR (V) EN input current IIH(EN) (μA) 16 12 8 Recovery voltage （VUVR） 2.5 Detection voltage （VUV） 2.4 4 VEN = VIN 0 -50 -25 0 25 50 Junction temperature 75 100 Tj (°C) 2.3 -50 125 -25 0 VOUT – VIN Tj 125 (°C) 1.5 VFB input voltage 1 0.5 2.3 2.2 2.4 Input voltage 2.5 VIN 2.6 VEN = VIN VOUT = 1.2V Tj = 25°C (V) VEN = VIN VOUT = 1.2V Tj = 25°C VFB (V) 100 VFB – VIN VOUT Output voltage 75 0.82 0 0.81 0.8 0.79 0.78 2.7 2 (V) 3 5 VIN 6 (V) ΔVOUT – VIN 30 VIN = 5V VOUT = 1.2V VEN = VIN (mV) VOUT = 1.2V , IOUT = 10mA L = 1.0μH , COUT = 22μF ×3 20 VFB ΔVOUT 0.81 Output voltage 0.8 0.79 0.78 -50 4 Input voltage VFB – Tj 0.82 (V) 50 Junction temperature 2 VFB input voltage 25 Ta = 25°C 10 0 -10 -20 -30 -25 0 25 50 Junction temperature 75 Tj 100 2 125 3 4 Input voltage (°C) 11 5 VIN 6 (V) 2013-11-01 TCV7113F fOSC – VIN fOSC – Tj Tj = 25°C fOSC 1100 Oscillation frequency fOSC Oscillation frequency (kHz) 1200 (kHz) 1200 1000 900 800 2 3 4 Input voltage 5 VIN VIN = 5V 1100 1000 900 800 -50 6 (V) -25 0 ISS – VIN Tj 100 125 (°C) ISS – Tj Tj = 25°C External soft-start charge current ISS (μA) External soft-start charge current ISS (μA) 75 0 -2 -4 -6 -8 -10 2 3 4 Input voltage 5 VIN VIN = 5V -2 -4 -6 -8 -10 -12 -50 6 (V) -25 0 25 50 Junction temperature 75 Tj 100 125 (°C) ISS – Tj 0 External soft-start charge current ISS (μA) 50 Junction temperature 0 -12 25 VIN = 3.3V -2 -4 -6 -8 -10 -12 -50 -25 0 25 50 Junction temperature 75 Tj 100 125 (°C) 12 2013-11-01 TCV7113F ΔVOUT – IOUT ΔVOUT – IOUT 30 30 VIN = 5V , VOUT = 1.2V (mV) 20 LS : SSM6K411TU, CRS30I30A ΔVOUT Ta = 25°C 10 L = 1.0μH , COUT = 22μF ×3 20 LS : SSM6K411TU, CRS30I30A Ta = 25°C 10 0 0 Output voltage Output voltage ΔVOUT (mV) VIN = 5V , VOUT = 3.3V L = 1.0μH , COUT = 22μF ×2 -10 -20 -30 -10 -20 -30 0 1 2 3 4 Output current 6 5 IOUT 0 7 1 2 (A) L = 1.0μH , COUT = 22μF ×3 20 LS : SSM6K411TU, CRS30I30A 80 10 0 -10 η (%) Ta = 25°C 60 Efficiency (mV) ΔVOUT Output voltage 7 η – IOUT VIN = 3.3V , VOUT = 1.2V 40 VIN = 5V , VOUT = 3.3V 20 -20 L = 1.0μH , COUT = 22μF ×2 LS : SSM6K411TU, CRS30I30A 0 1 2 3 4 Output current IOUT 5 0 0.001 6 (A) Ta = 25°C 0.01 0.1 Output current 10 1 IOUT (A) η – IOUT η – IOUT 100 80 80 (%) 100 (%) η 60 Efficiency η IOUT 6 5 100 -30 Efficiency 4 Output current (A) ΔVOUT – IOUT 30 3 40 VIN = 5V , VOUT = 1.2V 20 60 40 VIN = 3.3V , VOUT = 1.2V 20 L = 1.0μH , COUT = 22μF ×3 L = 1.0μH , COUT = 22μF ×3 LS : SSM6K411TU, CRS30I30A LS : SSM6K411TU, CRS30I30A Ta = 25°C 0 0.001 0.01 0.1 Output current 1 IOUT Ta = 25°C 0 10 0.001 0.01 0.1 Output current (A) 13 1 IOUT 10 (A) 2013-11-01 TCV7113F η – IOUT Overcurrent Protection 5 (V) 4 60 3 Output voltage Efficiency η (%) 80 VOUT 100 40 VIN = 5V , VOUT = 3.3V 20 L = 1.0μH , COUT = 22μF ×2 VIN = 5V , VOUT = 3.3V L = 1μH , COUT = 22μF ×2 LS : SSM6K411TU, CRS30I30A Ta = 25°C 2 1 LS : CLS01 Ta = 25°C 0 0.001 0.01 0.1 Output current 0 10 1 IOUT 4 5 (A) 7 Output current Overcurrent Protection IOUT 9 8 (A) Overcurrent Protection 2 2 VIN = 3.3V , VOUT = 1.2V L = 1μH , COUT = 22μF ×3 LS : SSM6K411TU, CRS30I30A Ta = 25°C 1.5 VOUT VOUT (V) (V) VIN = 5V , VOUT = 1.2V L = 1μH , COUT = 22μF ×3 LS : SSM6K411TU, CRS30I30A Ta = 25°C 1.5 1 Output voltage Output voltage 6 0.5 0 1 0.5 0 4 5 6 Output current 7 IOUT 8 4 9 5 6 Output current (A) 14 7 IOUT 8 9 (A) 2013-11-01 TCV7113F Startup Characteristics (Internal Soft-Start Time) VIN = 5V VOUT = 3.3V Ta = 25°C L = 1μH COUT = 22μF×2 Startup Characteristics (CSS = 0.1 μF) VIN = 5V VOUT = 3.3V Ta = 25°C L = 1μH COUT = 22μF×2 Output voltage: VOUT (1V/div) EN voltage:VEN:L→H Output voltage: VOUT (1V/div) EN voltage:VEN:L→H 200 μs/div 2 ms/div Load Response Characteristics Load Response Characteristics VIN = 5V , VOUT = 3.3V , Ta = 25°C L = 1μH , COUT = 22μF ×2 LS : SSM6K411TU, CRS30I30A VIN = 5V , VOUT = 1.2V , Ta = 25°C L = 1μH , COUT = 22μF ×3 LS : SSM6K411TU, CRS30I30A Output voltage VOUT (200 mV/div) Output voltage VOUT (100 mV/div) Output current IOUT : (10mA→5A→10mA) Output current IOUT : (10mA→5A→10mA) 100 μs/div 100 μs/div 15 2013-11-01 TCV7113F Package Dimensions HSON8-P-0505-1.27 Unit: mm Weight: 0.068 g (typ.) 16 2013-11-01 TCV7113F RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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