TJ200F04M3L,LXHQ

TJ200F04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ200F04M3L 1. Applications • Automotive • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.45 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220SM(W) Start of commercial production ©2015-2020 Toshiba Electronic Devices & Storage Corporation 1 2014-12 2020-06-24 Rev.8.0 TJ200F04M3L  unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25 25 Characteristics Symbol Rating Unit V Drain-source voltage VDSS -40 Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -200 Drain current (pulsed) (Note 1) IDP -600 (Note 2) PD 375 W (Note 3) EAS 924 mJ IAS -200 A Channel temperature (Note 4) Tch 175  Storage temperature (Note 4) Tstg -55 to 175 Power dissipation (Tc = 25) Single-pulse avalanche energy Single-pulse avalanche current Note: A Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ©2015-2020 Toshiba Electronic Devices & Storage Corporation 2 2020-06-24 Rev.8.0 TJ200F04M3L 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Symbol Max Unit Rth(ch-c) 0.4 /W Note 1: Ensure that the channel temperature does not exceed 175. Note 2: The power dissipation value is calculated based on the channel-to-case thermal resistance. However, the safe operating area is not only limited to thermal limits but also the current concentration phenomenon. This device should not be used under conditions outside its safe operating area shown herein. Note 3: VDD = -25 V, Tch = 25 (initial), L = 24 µH, RG = 25 Ω, IAS = -200 A, VGS = 0/-15 V Note 4: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. ©2015-2020 Toshiba Electronic Devices & Storage Corporation 3 2020-06-24 Rev.8.0 TJ200F04M3L 6. Electrical Characteristics  unless otherwise specified) 6.1. Static Characteristics (Ta = 25 25 Characteristics Symbol Gate leakage current IGSS VGS = -20/+10 V, VDS = 0 V Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage (Note 5) Min Typ. Max Unit   ±1 µA IDSS VDS = -40 V, VGS = 0 V   -10 V(BR)DSS ID = -10 mA, VGS = 0 V -40   V(BR)DSX ID = -10 mA, VGS = 10 V -30   Vth VDS = -10 V, ID = -1 mA -2.0  -3.0 RDS(ON) VGS = -6 V, ID = -100 A  1.74 2.6 VGS = -10 V, ID = -100 A  1.45 1.8 Gate threshold voltage Drain-source on-resistance Test Condition V mΩ Note 5: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.  unless otherwise specified) 6.2. Dynamic Characteristics (Ta = 25 25 Characteristics Symbol Input capacitance Ciss Test Condition VDS = -10 V, VGS = 0 V, f = 1 MHz Min Typ. Max Unit  12800  pF Reverse transfer capacitance Crss  1150  Output capacitance Coss  2400  Switching time (rise time) tr  14  Switching time (turn-on time) ton  29  tf  515  toff  1750  Switching time (fall time) Switching time (turn-off time) See Fig. 6.2.1 ns VDD ≈ -20 V VGS = 0 V/-10 V ID = -100 A RL = 0.2 Ω RGG = RGS = 4.7 Ω Duty ≤ 1 %, tw = 10 µs Fig. 6.2.1 Switching Time Test Circuit  unless otherwise specified) 25 6.3. Gate Charge Characteristics (Ta = 25 Characteristics Symbol Test Condition Min Typ. Max Unit Qg VDD ≈ -32 V, VGS = -10 V, ID = -200 A  460  nC Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Qgs1  72  Gate-drain charge Qgd  130   unless otherwise specified) 6.4. Source-Drain Characteristics (Ta = 25 25 Characteristics Reverse drain current (DC) (Note 6) Reverse drain current (pulsed) (Note 6) Symbol Test Condition Min Typ. Max Unit IDR    -200 A   -600 Diode forward voltage VDSF IDRP IDR = -200 A, VGS = 0 V   1.2 V Reverse recovery time trr  90  ns Reverse recovery charge Qrr IDR = -200 A, VGS = 0 V dIDR/dt = 50 A/µs  104  nC Note 6: Ensure that the channel temperature does not exceed 175. ©2015-2020 Toshiba Electronic Devices & Storage Corporation 4 2020-06-24 Rev.8.0 TJ200F04M3L 7. Marking (Note) Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ©2015-2020 Toshiba Electronic Devices & Storage Corporation 5 2020-06-24 Rev.8.0 TJ200F04M3L 8. Moisture-Proof Packing This device is packed in a moisture-proof laminated aluminum bag. 8.1. Precautions for Transportation and Storage (Note) (1) Avoid excessive vibration during transportation. (2) Do not toss or drop the packed devices to avoid ripping of the bag. (3) After opening the moisture-proof bag, the devices should be assembled within two weeks in an (4) The moisture-proof bag may be stored unopened for up to 24 months at 5 to 30 and RH90% or below. (5) If, upon opening the bag, the moisture indicator card shows humidity of 30% or above (the color of the environment of 5 to 30 and RH70% or below. Perform reflow at most twice. 30% dot has changed from blue to pink) or the expiration date has passed, the devices should be baked as follows: Note: Baking conditions: 125 for 48 hours. Since the tape materials are not heat-proof, devices should be placed on either heat-proof trays or aluminum magazines when baking. The humidity indicator shows an approximate ambient humidity at 25 . If the ambient humidity is below 30 %, the color of all the indicator dots is blue. If, upon opening the bag, the color of the 30 % dot has changed from blue to pink, the devices should be baked before assembly. Fig. 8.1.1 Humidity Indicator ©2015-2020 Toshiba Electronic Devices & Storage Corporation 6 2020-06-24 Rev.8.0 TJ200F04M3L 9. Characteristics Curves (Note) Fig. 9.1 ID - VDS Fig. 9.2 ID - VDS Fig. 9.3 ID - VGS Fig. 9.4 VDS - VGS Fig. 9.5 RDS(ON) - ID Fig. 9.6 RDS(ON) - Ta ©2015-2020 Toshiba Electronic Devices & Storage Corporation 7 2020-06-24 Rev.8.0 TJ200F04M3L Fig. 9.7 IDR - VDS Fig. 9.8 Capacitance - VDS Fig. 9.9 Vth - Ta Fig. 9.10 Dynamic Input/Output Characteristics Fig. 9.11 PD - Tc (Guaranteed Maximum) ©2015-2020 Toshiba Electronic Devices & Storage Corporation 8 2020-06-24 Rev.8.0 TJ200F04M3L Fig. 9.12 rth/Rth(ch-c) - tw (Guaranteed Maximum) Fig. 9.13 Safe Operating Area (Guaranteed Maximum) Fig. 9.14 EAS - Tch (Guaranteed Maximum) Fig. 9.15 Test Circuit/Waveform Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2015-2020 Toshiba Electronic Devices & Storage Corporation 9 2020-06-24 Rev.8.0 TJ200F04M3L Package Dimensions Unit: mm Weight: 1.07 g (typ.) Package Name(s) TOSHIBA: 2-10W1S Nickname: TO-220SM(W) ©2015-2020 Toshiba Electronic Devices & Storage Corporation 10 2020-06-24 Rev.8.0 TJ200F04M3L RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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