TJ60S06M3L(T6L1,NQ

TJ60S06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ60S06M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.6 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 2011-03 2020-07-06 Rev.6.0 TJ60S06M3L  unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25 25 Characteristics Symbol Rating Unit V Drain-source voltage VDSS -60 Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -60 Drain current (pulsed) (Note 1) IDP -120 PD 100 W (Note 2) EAS 132 mJ IAR -60 A Channel temperature (Note 3) Tch 175  Storage temperature (Note 3) Tstg -55 to 175 Power dissipation (Tc = 25) Single-pulse avalanche energy Avalanche current Note: A Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Symbol Max Unit Rth(ch-c) 1.5 /W Note 1: Ensure that the channel temperature does not exceed 175. Note 2: VDD = -25 V, Tch = 25 (initial), L = 50 µH, RG = 25 Ω, IAR = -60 A Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 2 2020-07-06 Rev.6.0 TJ60S06M3L 6. Electrical Characteristics  unless otherwise specified) 6.1. Static Characteristics (Ta = 25 25 Characteristics Symbol Gate leakage current IGSS VGS = -16/+10 V, VDS = 0 V Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage (Note 4) Min Typ. Max Unit   ±10 µA IDSS VDS = -60 V, VGS = 0 V   -10 V(BR)DSS ID = -10 mA, VGS = 0 V -60   V(BR)DSX ID = -10 mA, VGS = 10 V -50   Vth VDS = -10 V, ID = -1 mA -2.0  -3.0 VGS = -6 V, ID = -30 A  9.8 14.5 VGS = -10 V, ID = -30 A  8.6 11.2 Gate threshold voltage Drain-source on-resistance Test Condition RDS(ON) V mΩ Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.  unless otherwise specified) 6.2. Dynamic Characteristics (Ta = 25 25 Characteristics Symbol Input capacitance Ciss Test Condition VDS = -10 V, VGS = 0 V, f = 1 MHz Min Typ. Max Unit  7760  pF Reverse transfer capacitance Crss  530  Output capacitance Coss  690  Switching time (rise time) tr  100  Switching time (turn-on time) ton  127  tf  250  toff  970  Switching time (fall time) Switching time (turn-off time) See Figure 6.2.1. ns Fig. 6.2.1 Switching Time Test Circuit  unless otherwise specified) 25 6.3. Gate Charge Characteristics (Ta = 25 Characteristics Symbol Test Condition VDD ≈ -48 V, VGS = -10 V, ID = -60 A Min Typ. Max Unit  156  nC Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs  107  Gate-drain charge Qgd  49  Max Unit A  unless otherwise specified) 6.4. Source-Drain Characteristics (Ta = 25 25 Characteristics Symbol Test Condition Min Typ. Reverse drain current (DC) (Note 5) IDR    -60 Reverse drain current (pulsed) (Note 5) IDRP    -120 Diode forward voltage VDSF IDR = -60 A, VGS = 0 V   1.2 V Reverse recovery time trr 51  ns Qrr IDR = -60 A, VGS = 0 V dIDR/dt = 50 A/µs  Reverse recovery charge  39  nC Note 5: Ensure that the channel temperature does not exceed 175. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 3 2020-07-06 Rev.6.0 TJ60S06M3L 7. Marking (Note) Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 4 2020-07-06 Rev.6.0 TJ60S06M3L 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta ©2016-2020 Toshiba Electronic Devices & Storage Corporation 5 2020-07-06 Rev.6.0 TJ60S06M3L Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS Fig. 8.9 Vth - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 PD - Tc (Guaranteed Maximum) ©2016-2020 Toshiba Electronic Devices & Storage Corporation 6 2020-07-06 Rev.6.0 TJ60S06M3L Fig. 8.12 rth/Rth(ch-c) - tw (Guaranteed Maximum) Fig. 8.13 Safe Operating Area (Guaranteed Maximum) Fig. 8.14 EAS - Tch (Guaranteed Maximum) Fig. 8.15 Test Circuit/Waveform Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 7 2020-07-06 Rev.6.0 TJ60S06M3L Package Dimensions Unit: mm Weight: 0.36 g (typ.) Package Name(s) TOSHIBA: 2-7M1A Nickname: DPAK+ ©2016-2020 Toshiba Electronic Devices & Storage Corporation 8 2020-07-06 Rev.6.0 TJ60S06M3L RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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