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TK14A45D(STA4,Q,M)

TK14A45D(STA4,Q,M)

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

    SOT78

  • 描述:

    MOSFETN-CH450V14ATO-220SIS

  • 详情介绍
  • 数据手册
  • 价格&库存
TK14A45D(STA4,Q,M) 数据手册
2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures ....................................................................... 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes ........ 4 2-1 MOSFET Product Lines ................................................................................... 4 2-2 Part Numbering Schemes ................................................................................ 5 3 Selection Guide (By Absolute Maximum Ratings) ............................. 6 4 Low-VDSS MOSFETs (in Small SMD Packages) ................................. 16 Toshiba’s MOSFET devices meet the needs of a wide range of ultra-high-density applications. 4-1 Packaging Options ......................................................................................... 16 • SSM Series • TPC Series 4-2 Application Examples and Block Diagrams .................................................... 17 • Cell Phone (Power Supply Circuit) • Notebook PC (Power Supply Circuit) • Lithium-Ion Secondary Battery (Battery Protection Circuits) • Motor Driver (Power Driver Circuit) 4-3 Low-VDSS MOSFET Roadmaps ..................................................................... 19 • Roadmap for Trench MOSFETs • Package Options 4-4 Low-VDSS, High-Speed MOSFETs ................................................................. 21 • Synchronous Rectification DC-DC Converters – Block Diagram, Timing Chart and Power Loss Factors – Summary Results of Power Loss Simulation and Key Parameters for MOSFETs – Efficiency Improvement by Thermally Enhanced Package and New Process Technology – MOSBD (MOSFET with SBD) • High-Speed MOSFET Offerings 4-5 Low-VDSS, Low-RDS(ON) MOSFETs (for Lithium-Ion Battery Protection) ......... 26 • Lithium-Ion Battery Protection Circuit Trend • MOSFET Roadmap • Low-ON-resistance N-Channel Power MOSFETs • Low-ON-resistance P-Channel Power MOSFETs 4-6 Semi-Power MOSFET Offerings .................................................................... 28 • Semi-Power P-Channel Single MOSFETs • Semi-Power N-Channel Single MOSFETs • Semi-Power Dual MOSFETs • MOSFET with a Schottky Barrier Diode • VS-6 Series … [Part Number: TPC6xxx] • VS-8 Series … [Part Number: TPCF8xxx] • PS-8 Series … [Part Number: TPCP8xxx] • Chip LGA Series ... [Part Number: TPCL4xxx] • STP2 Series ... [Part Number: TPCT4xxx] • TSON Advance Series … [Part Number: TPCC8xxx] • TSSOP Advance Series … [Part Number: TPCM8xxx] • SOP-8 Series … [Part Number: TPC8xxx] • SOP Advance Series … [Part Number: TPCA8xxx] • DPAK Series ... [Part Number: TKxxPxxxM1] 4-7 Standard MOSFET Series (ID < 500 mA)....................................................... 36 • Single MOSFETs • Dual MOSFETs 5 Low-VDSS, High-Qg MOSFETs ............................................................. 37 5-1 TO-220SM(W) Series ..................................................................................... 37 5-2 U-MOS (Trench Type) Series ......................................................................... 38 5-3 U-MOS Series for Synchronous Rectification (VDSS = 60 V to 150 V) ............ 39 6 Mid- and High-VDSS MOSFETs .............................................................40 6-1 6-2 6-3 6-4 π-MOSVII Series (VDSS = 450 V to 650 V) ..................................................... 40 Super-Junction DTMOS Series (VDSS = 600 V, 650 V) ................................... 41 High-speed π-MOS Series (VDSS = 450 V to 600 V)....................................... 42 π-MOS Series................................................................................................. 43 7 MOSFET Part Numbers ........................................................................ 46 7-1 Alphanumeric Index of Part Numbers ............................................................ 46 8 Product Obsolescence ........................................................................ 53 8-1 End-of-Life Products ...................................................................................... 53 9 Packaging ............................................................................................. 55 9-1 Compact Surface-Mount Packages ................................................................ 55 9-2 Through-Hole Packages................................................................................. 66 2 1 Features and Structures 1) No carrier storage effect; superior frequency and switching characteristics 2) Rugged and no current concentration 3) Voltage-controlled device, hence low drive power 4) Easy parallel connection ■ Toshiba MOSFETs have the following additional features: 1) Guaranteed avalanche capability................. Allows an absorber circuit to be simplified 2) Improved functioning of built-in diodes ........ Enhanced circuit design flexibility 3) High ruggedness .......................................... Increased margin for circuit design 4) High-speed switching ................................... Higher speed in end-product’s operation 5) Low R(DS)ON ................................................... Reduced end-product’s power consumption 6) Smaller packages ......................................... Reduced end-product size 7) Low drive loss ............................................... Reduced end product’s power ■ Structures of Toshiba MOSFETs Double-Diffusion Structure Source Gate ● π-MOS + P + n n P n– n+ Toshiba Power MOSFETs use a double-diffusion MOS (D-MOS) structure, which produces high-withstand voltage, to form channels. This structure is especially well suited to high-withstand voltage and high-current devices. A high level of integration yields a high-performance Power MOSFET with low ON-resistance and low power loss. Drain Trench Structure Source Gate n+ ● U-MOS n+ P P n– Higher channel density is achieved by connecting channels vertically to form a U-groove at the gate region, a structure that yields a lower ON-resistance than other MOSFET structures. n+ Drain Super-Junction Structure Source Gate n+ ● DTMOS n+ P P n The super-junction structure, which has P-type pillar layers as shown left, realizes high withstand voltage and ON-resistance lower than the conventional theoretical limit of silicon. n+ Drain 3 2 Toshiba’s MOSFET Product Lines and Part Numbering 2-1 MOSFET Product Lines SSM Series (VDSS = 12 V to 60 V) Very compact and thin, the SSM Series is suitable for use in various electronic devices. The SSM Series is available in a wide range of packages and features low voltage drive. ■ Applications ● Cell phones ● Notebook PCs ● Portable electronic devices ● Small-signal switching VS and PS Series (VDSS = 12 V to 40 V) Very compact and thin, the VS and PS Series are suitable for use in various electronic devices. ■ Applications ● Cell phones ● Notebook PCs ● Portable electronic devices Chip LGA and STP Series (VDSS = 20 V to 30 V) The LGA and STP Series are housed in an ultra-small and thin package and are suitable for use in lithium-ion secondary battery protection circuits in various portable electronic devices. SOP and TSON Series (VDSS = 20 V to 250 V) The SOP and TSON Series are compact and thin, and require only a small mounting area. They are suitable for lithium-ion secondary battery protection circuits and notebook PCs. ■ Applications ● Lithium-ion secondary battery protection circuits ■ Applications ● Lithium-ion secondary battery protection circuits ● Notebook PCs ● Portable electronic devices ● DC-DC converters TO-220SM(W) Series (VDSS = 40 V to 150 V) The TO-220SM package, which uses Cu connectors and a wide source terminal, realizes low ON-resistance and a high current-carrying capability. ■ Applications ● Motor drivers ● Switching power supplies Low-VDSS, High-Qg U-MOS Series (VDSS = 40 V to 100 V) High integration is achieved using a trench technology. Low-voltage drive (VGS = 4 V) is possible due to ultra-low ON-resistance. ■ Applications ● Motor drivers ● Solenoids and lamp drivers U-MOS Series for Synchronous Rectification (VDSS = 60 V to 150 V) Fabricated using a trench technology, the U-MOS Series is ideal for synchronous rectification on the secondary side of power supply circuits. ■ Applications ● Switching power supplies ● AC adapters ● Motor drivers New π-MOSVII Series (VDSS = 450 V to 650 V) The latest addition to the π-MOS portfolio, the π-MOSVII Series offers reduced capacitances due to optimized chip design and is available with a greatly wider range of electrical characteristics. ■ Applications ● Switching power supplies ● AC adapters Super-Junction DTMOS Series (VDSS = 600, 650 V) The super-junction DTMOS Series achieves low ON-resistance and low gate charge (Qg) due to the use of the latest super-junction structure. ■ Applications ● Switching power supplies ● AC adapters ● Motor drivers High-Speed π-MOS Series (VDSS = 450 V to 600 V) The new High-Speed π-MOS Series achieves higher switching speed than the well-proven π-MOS Series. Two series are available: high-speed switching series and high-speed diode series. 4 ■ Applications ● Inverters ● Switching power supplies ● Motor drivers ● AC adapters Schemes 2-2 Part Numbering Schemes ■ Small-Signal MOSFET (SSM) Series SSM 3 K 101 TU Package Serial number of the products Polarity and internal configuration K: N-channel, single J: P-channel, single N: N-channel, dual P: P-channel, dual L: N-channel and P-channel (dual) F: S-Mini FU: USM FS: SSM FV: VESM T: TSM TU: UFM CT: CST3 CTB: CST3B CT: CST4 FU: US6 FE: ES6 TU: UF6 CTD: CST6D F: SMV FU: USV FE: ESV TU: UFV E: N-channel and P-channel (pre-wired as a load switch) H: N-channel and SBD G: P-channel and SBD Pin count Small-Signal MOSFET ■ Multi-Pin Series ■ New Series TPCM8 0 01 -H ■ Conventional Series TK 55 A 10 J 1 H: High-speed type None: Low-ON-resistance type Serial number of the products 0: N-channel, single 1: P-channel, single 2: N-channel, dual 3: P-channel, dual 2SK ✽ ✽ ✽ ✽ Additional information 1: Low-capacitance type 3: Low-ON-resistance type 5: Fast body diode type 4: N-channel and P-channel, dual A: N-channel and SBD B: P-channel and SBD J: P-channel and NPN N-channel MOS 2SJ ✽ ✽ ✽ ✽ P-channel MOS Series C: π-MOSVI D: π-MOSVII J: U-MOSIII M: U-MOSVI TPC6: VS-6 Series TPCF8: VS-8 Series TPCP8: PS-8 Series TPCC8: TSON Advance Series TPCS8: TSSOP-8 Series TPCM8: TSSOP Advance Series TPC8: SOP-8 Series TPCA8: SOP Advance Series TPCT4: STP Series TPCL4: Chip LGA K: U-MOSIV T: DTMOSI U: DTMOSII Voltage: 10% of the VDSS Package A: TO-220SIS D: TO-220(W) F: TO-220SM(W) J: TO-3P(N) X: TFP P: DPAK Q: New PW-Mold2 Current rating TK: N-channel TJ: P-channel 5 3 VDSS (V) ID (A) Selection Guide (By Absolute Maximum Ratings) 12 20 24 30 40 50 60 100 150 180 200 250 400 450 500 525 550 600 2SJ343(50)➀ 0.05 0.1 0.18 SSM3K35FS(20)➅ SSM3K35MFV(20)➅ SSM3K35CT(20)➅ SSM6N35FU(20)➅ SSM6L35FU(20)➅ SSM6N35FE(20)➅ SSM6L35FE(20)➅ SSM3J05FU(4)➂ SSM6P05FU(4)➂ SSM5P05FU(4)➂ 0.2 SSM3K15F(7)➂ SSM3J15F(32)➂ SSM3K15FU(7)➂ SSM3J15FU(32)➂ SSM3K15FS(7)➂ SSM3J15FS(32)➂ SSM3K15FV(7)➂ SSM3J15FV(32)➂ SSM3K15CT(7)➂ SSM3J15CT(32)➂ SSM6N15FU(7)➂ SSM6P15FU(32)➂ SSM5N15FU(7)➂ SSM5P15FU(32)➂ SSM6N15FE(7)➂ SSM6P15FE(32)➂ SSM5N15FE(7)➂ SSM5P15FE(32)➂ SSM3K44FS(7)➅ SSM3K44MFV(7)➅ SSM6N44FU(7)➅ SSM6N44FE(7)➅ VDSS (V) ID (A) 0.05 2SJ344(50)➀ SSM3K04FU(12)➂ SSM3K16FU(15)➂ SSM3J16FU(45)➂ SSM3K04FS(12)➂ SSM3K16FS(15)➂ SSM3J16FS(45)➂ SSM3J35FS(44)➅ SSM3K03FV(12)➂ SSM3K04FV(12)➂ SSM3K16FV(15)➂ SSM3J16FV(45)➂ SSM3J35MFV(44)➅ SSM3K16CT(15)➂ SSM3J16CT(45)➂ SSM3J35CT(44)➅ SSM6N04FU(12)➂ SSM6N16FU(15)➂ SSM6P16FU(45)➂ SSM6P35FU(44)➅ SSM6N03FE(12)➂ SSM6N16FE(15)➂ SSM6P16FE(45)➂ SSM6L16FE(15)➂ SSM6P35FE(45)➅ SSM5N16FU(15)➂ SSM5P16FU(45)➂ SSM5N03FE(12)➂ SSM5N16FE(15)➂ SSM5P16FE(45)➂ 650 SSM3K17FU(40)➁ SSM6N17FU(40)➁ 0.1 0.18 SSM3K7002BF(3.3)➅ SSM3K7002BFS(3.3)➅ SSM3K7002F(3.3)➂ SSM3K7002AF(3.3)➁ SSM3K7002FU(3.3)➂ SSM3K7002AFU(3.3)➁ SSM6N7002BFE(3.3)➅ 2SJ305(4)➀ 2SK2009(2)➀ SSM3J09FU(4.2)➂ SSM6P09FU(4.2)➂ SSM6N7002BFU(3.3)➅ SSM6N7002FU(3.3)➂ SSM6N7002AFU(3.3)➁ 2SJ168(2)➀ 2SK1062(1)➀ 0.2 0.25 SSM6N37CTD(5.6)➅ 0.25 0.33 SSM3J36TU(3.6)➅ SSM3J36FS(3.6)➅ SSM3J36MFV(3.6)➅ SSM6P36TU(3.6)➅ SSM6P36FE(3.6)➅ 0.33 SSM6L05FU(1.2)➂ SSM6N05FU(1.2)➂ 0.4 SSM3K05FU(1.2)➂ SSM5N05FU(1.2)➂ SSM6L09FU(1.2)➂ 0.4 SSM6N09FU(1.2)➂ SSM3K09FU(1.2)➂ SSM4K27CT(0.205)➅ SSM6L10TU(0.145)➅ SSM6L11TU(0.145)➅ SSM6L12TU(0.145)➅ SSM6N25TU(0.145)➅ SSM6N36TU(1.52)➅ SSM6P25TU(0.26)➅ SSM6P26TU(0.23)➅ 0.5 SSM6J25FE(0.26)➅ SSM6J26FE(0.23)➅ 2SK2998 (20)➁ SSM6N24TU(0.145)➅ SSM6K24FE(0.145)➅ 0.5 2SK3302 (18)➁ 2SK3471 (18)➁ SSM6K25FE(0.145)➅ SSM6L36TU(1.52)➅ SSM3K36FS(1.52)➅ SSM3K36MFV(1.52)➅ SSM3K36TU(1.52)➅ SSM6N36FE(1.52)➅ SSM6L36FE(1.52)➅ SSM6N43FU(1.52)➅ SSM3K43FS(1.52)➅ 0.65 SSM6J06FU(0.5)➂ 0.65 0.72 0.77 SSM6P41FE(0.3)➅ 0.72 0.77 SSM6N42FE(0.26)➅ SSM6L13TU(0.143)➅ SSM6N29TU(0.143)➅ 0.8 SSM6P28TU(0.234)➅ 0.8 SSM6J07FU(0.8)➂ SSM6J205FE(0.234)➅ Legend Product series ➃ : L2-π-MOSV ➇ : π-MOSIV ➀ : π-MOSIII ➁ : π-MOSV ➂ : π-MOSVI ➄ : L2-π-MOSVI ➅ : U-MOS ➆ : π-MOSVII ➉ : DTMOSII ➈ : DTMOSI Package PW-Mini VS-8 SOP-8 Lead Clamp SOP Advance S-Mini 6 TSM USM UFM VS-6 ♠ PS-8 STP TO-220NIS TO-220SIS SSM VESM TO-92MOD TO-220AB CST3 CST3B PW-Mold TO-220(W) CST4 New PW-Mold TFP SMV TSON Advance TO-220FL/SM US6 UF6 New PW-Mold2 DP TO-220SM(W) TO-3P(N) ES6 CST6D USV TPS TSSOP Advance TO-3P(N)IS UFV TSSOP-8 TO-3P(L) SOP-8 Chip LGA Notes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V drive ✽ = 1.8-V drive = High-speed diode N = N-ch ESV 7 P = P-ch CN = Complementary N-ch CP = Complementary P-ch NS = N-ch + SBD PD = P-ch + Driver PS = P-ch + SBD (load switch) [ ] = Under development 3 VDSS (V) ID (A) 1 Selection Guide (By Absolute Maximum Ratings) 12 PS PS SSM5G02TU (0.16)➅ SSM5G04TU (0.24)➅ PD SSM6E01TU (0.16)➅ 20 SSM3J111TU (0.48)➅ 24 40 30 PS 50 SSM5G01TU (0.8)➅ 60 100 2SJ360 (0.73)➃ 2SK2963 (0.7)➃ 2SK2962 (0.7)➃ 2SJ507 (0.7)➃ 150 180 2SJ313 (5.0) 2SJ338 (5.0) 2SK2013 (5.0) 2SK3670 (1.7) 2SJ508 (1.9)➃ 2SJ509 (1.9)➃ 1.1 SSM6K06FU (0.16)➂ SSM6J23FE (0.16)➅ 200 250 2SK2992 (3.5)➁ 400 CP TPC8404(2.55)➁ CN TPC8404(1.7)➁ 450 2SK3498 (5.5)➁ 500 525 550 2SK4023 (4.6)➁ 2SK3374 (4.6)➁ 600 800 2SK3371 (9)➁ 2SK4026 (9)➁ 900 1000 2SK2733 (9.0)➀ 2SK2845 (9)➀ 1 2SK3301 (20)➀ 2SK3472 (4.6)➁ VDSS (V) ID (A) 2SK2162 (5.0) 1.1 SSM3J112TU (0.79)➅ SSM3K106TU (0.53)➆ SSM6P54TU (0.228)➅ 1.2 NS 1.2 SSM5H07TU (0.54)➆ SSM6K31FE (0.54)➆ SSM6K30FE (0.42)➆ 1.3 SSM6J08FU (0.18)➅ PS TPCP8BA1 (0.18)➅ SSM6J207FE (0.491)➅ SSM6K22FE (0.17)➅ SSM3J118TU (0.48)➅ SSM6P40TU (0.403)➅ PS SSM5G11TU (0.403)➅ NS SSM5H01TU (0.45)➅ SSM6K210FE (0.371)➅ 1.4 1.5 NS SSM5H03TU (0.3)➅ 1.4 PS 1.5 SSM3K107TU (0.41)➆ SSM6P39TU (0.213)➅ NS SSM5H05TU (0.16)➅ NS SSM5H08TU (0.16)➅ SSM3J02T (0.5)➂ SSM3K128TU (0.36)➅ PS SSM5G10TU (0.213)➅ SSM6K07FU (0.22)➂ 1.6 SSM6N42FE (0.252)➅ NS SSM5H10TU (0.119)➅ NS TPCP8AA1 (0.105)➅ SSM6L39TU (0.119)➅ SSM6N39TU (0.119)➅ SSM6K08FU (0.105)➅ SSM3J313T (0.268)➅ NS SSM5H11TU (0.182)➅ SSM6L40TU (0.182)➅ SSM6N40TU (0.182)➅ SSM3J113TU (0.169)➅ SSM3J01T (0.4)➂ SSM3J305T (0.477)➅ SSM5G09TU (0.13)➅ 1.7 PD SSM6E03TU (0.144)➅ 1.8 2 2.1 SSM3J110TU (0.094)➅ SSM3J304T (0.127)➅ 1.7 TPC8012-H (0.4)➅ 1.8 TPCS8007-H (0.45)➁ SSM3J117TU (0.225)➅ SSM3K127TU (0.123)➅ SSM6J402TU (0.225)➅ 2SK2615 (0.3)➃ 2SK2961 (0.3)➃ 2SK3658 (0.3)➃ SSM6K407TU (0.44)➁ SSM6K32TU (0.44)➁ 1.9 2SJ610 (2.55)➁ SSM3K116TU (0.1)➅ SSM3J115TU (0.098)➅ SSM3K101TU (0.103)➅ 2.2 2SK3757 (2.45)➂ 2SK3766 (2.45)➂ 2SK2599 (3.2)➁ 2SK3373 (3.2)➁ 2SK2846 (5.0)➁ 2SK2865 (5.0)➁ 2SK3767 (4.5)➂ 2SK4002 (5)➁ TK2Q60D (4.3)➆ 2 2.1 TPCS8009-H (0.35)➁ SSM3K105TU (0.2)➂ TPCP8003-H (0.18)➅ TPC8214-H (0.18)➅ 2.2 SSM6K202FE (0.085)➅ 2.3 SSM3J306T (0.225)➅ SSM3K124TU (0.12)➆ 2.4 SSM6J50TU (0.064)➅ 2.5 2.6 2.4 SSM3K119TU (0.074)➅ SSM3K02T (0.2)➂ SSM6J401TU (0.145)➅ SSM3K318T (0.145)➅ 2SJ567 (2.0)➁ 2SJ680 (2.0)➁ 2SK3566 (6.4)➇ TK3A60DA (2.8)➆ 2.5 2.6 SSM3K102TU (0.071)➅ SM3J312T (0.091)➅ 2.7 2.8 2.9 TPC6105 (0.11)➅ TPCF8301 (0.11)➅ TPCF8B01 (0.11)➅ TPCF8103 (0.11)➅ SSM3J14T (0.17)➅ 2.7 2.8 2.9 SSM6K203FE (0.061)➅ SSM3K303T (0.12)➆ SSM3J13T (0.07)➅ SSM6J21TU (0.05)➅ 3 3.2 3.3 3.4 TPCF8201 (0.049)➅ TPCF8A01 (0.049)➅ TPCF8302 (0.059)➅ TPCF8303 (0.058)➅ SSM3K104TU (0.056)➅ SSM6K404TU (0.055)➅ SSM3K12T (0.175)➆ SSM6K34TU (0.077)➅ NS SSM5H14F (0.078)➅ SSM3K121TU (0.048)➅ SSM6K211FE (0.047)➅ TPCF8402 (0.077)➅ TPCF8304 (0.072)➅ SSM3K01T (0.12)➂ 2SK2200 (0.35)➃ 2SK2201 (0.35)➃ 2SK4018 (0.35)➃ 2SK3462 (1.7)➁ 2SK4022 (1.7)➁ 2SK2862 (3.2)➁ 2SK4003 (2.2)➂ (Short lead) 2SK3975 (2.2)➂ 2SK2603 (3.6)➀ 2SK2883 (3.6)➀ 2SK2608 (4.3)➀ 2SK2719 (4.3)➀ 2SK3564 (4.3)➇ 3 3.2 3.3 3.4 SSM6J212FE (0.0434)➅ TPCP8402 (0.072)➅ SSM3K301T (0.056)➅ SSM3J327F (0.095)➅ 3.5 3.6 3.8 3.9 TPCP8403 (0.070)➅ SSM3J314T (0.1)➅ TK4A55DA (2.45)➆ 2SK3085 (2.2)➁ 2SK3567 (2.2)➂ TK4A60DA (2.2)➆ 3.5 3.6 3.8 3.9 SSM3J317T (0.107)➅ TPCP8303 (0.04)➅ TPC8218-H (0.057)➅ TPC6006-H (0.075)➅ SSM6J51TU (0.054)➅ 4 Legend TPCS8008-H (0.58)➁ NS SSM5H12TU (0.133)➅ SSM6K208FE (0.133)➅ SSM3J109TU (0.13)➅ SSM3K122TU (0.123)➅ SSM6K405TU (0.126)➅ SSM6J206FE (0.13)➅ SSM6K204FE (0.126)➅ SSM3J46CTB (0.103)➅ SSM3J325F (0.155)➅ 1.3 1.6 SSM3J108TU (0.158)➅ SSM3J114TU (0.149)➅ PD SSM6E02TU (0.136)➅ SSM6J53FE (0.136)➅ 1.9 2.3 TPCS8004-H (0.8)➅ Product series ➃ : L2-π-MOSV ➇ : π-MOSIV SSM3J120TU (0.038)➅ SSM6K18TU (0.04)➅ TPCF8402 (0.05)➅ TPCP8404 (0.05)➅ TPCP8404 (0.05)➅ SSM3K316T (0.065)➅ SSM3K14T (0.067)➅ ➀ : π-MOSIII ➁ : π-MOSV ➂ : π-MOSVI ➄ : L2-π-MOSVI ➅ : U-MOS ➆ : π-MOSVII ➉ : DTMOSII ➈ : DTMOSI TK4A50D (2.0)➆ TPCA8008-H (0.58)➁ TK4A55D (1.9)➆ TK4A60D (1.7)➆ 2SK3798 (3.5)➇ 2SK1119 (3.8) 2SK1930 (3.8) 4 Package PW-Mini VS-8 SOP-8 Lead Clamp SOP Advance S-Mini 8 TSM USM UFM VS-6 ♠ PS-8 STP TO-220NIS TO-220SIS SSM VESM TO-92MOD TO-220AB CST3 CST3B PW-Mold TO-220(W) CST4 New PW-Mold TFP SMV TSON Advance TO-220FL/SM US6 UF6 New PW-Mold2 DP TO-220SM(W) TO-3P(N) ES6 CST6D USV TPS TSSOP Advance TO-3P(N)IS UFV TSSOP-8 TO-3P(L) SOP-8 Chip LGA Notes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V drive ✽ = 1.8-V drive = High-speed diode N = N-ch ESV 9 P = P-ch CN = Complementary N-ch CP = Complementary P-ch NS = N-ch + SBD PD = P-ch + Driver PS = P-ch + SBD (load switch) [ ] = Under development 3 VDSS (V) ID (A) Selection Guide (By Absolute Maximum Ratings) 12 20 24 30 4.2 SSM3K123TU (0.028)➅ SSM6K403TU (0.028)➅ TPCP8201 (0.05)➅ TPCP8402 (0.077)➅ SSM3K320T (0.077)➅ 4.4 SSM3J130TU (0.0258)➅ SSM6K406TU (0.0385)➅ TPC6107 (0.055)➅ TPC6108 (0.06)➅ TPC8405 (0.033)➅ 4.5 4.6 100 150 180 200 250 400 450 500 525 550 600 650 700 800 900 5 5.2 TPCF8101 (0.028)➅ 4.4 2SK3342 (1.0)➁ 2SK4021 (1.0)➁ 4.5 TPCP8403 (0.040)➅ TPCP8203 (0.040)➅ TPC8208 (0.05)➅ TPCS8209 (0.03)➅ TPCS8210 (0.03)➅ TPCS8303 (0.021)➅ TPCS8302 (0.035)➅ TPCP8301 (0.031)➅ TPCP8302 (0.033)➅ SSM3J307T (0.031)➅ SSM3K310T (0.028)➅ TPCS8209 (0.05)➅ TPCF8001 (0.032)➅ TPC8104-H (0.065)➅ TPC6007-H (0.054)➅ TPC6109-H (0.059)➅ 4.7 4.8 2SK2989 (0.15)➃ 2SJ537 (0.19)➃ 2SJ668 (0.17)➅ 2SJ681 (0.17)➅ 2SJ378 (0.19)➃ 2SJ669 (0.17)➅ 2SJ438 (0.19)➃ 2SK2229 (0.16)➃ 2SK4017 (0.1)➅ 2SK4033 (0.1)➅ TPC8213-H (0.05)➅ 2SJ407 (1.0)➁ 2SK2381 (0.8)➁ 2SK2835 (0.8)➁ 2SK2920 (0.8)➁ 2SK4020 (0.8)➁ 2SK3205 (0.52) 2SK2399 (0.23)➃ 2SK2400 (0.23)➃ 2SK4019 (0.23)➃ 2SJ512 (1.25)➁ 2SK2991 (1.5)➁ 2SK3466 (1.5)➁ TK5A65D (1.45)➆ TK5A55D (1.88)➆ 2SK2274 (1.7) 2SK2884 (2.2)➀ 2SK3863 (1.5)➂ 2SK4103 (1.5)➂ 2SK3417 (1.8)➁ 2SK3868 (1.7)➂ 2SK3565 (2.5)➇ 2SK3700 (2.5)➇ 2SK3742 (2.5)➇ 2SK1359 (3.8) 5 TK5A50D (1.5)➆ 5.2 TPC6111 (0.04)➅ TPC8211 (0.036)➅ TPCP8202 (0.023)➅ TPCP8101 (0.030)➅ SSM3J326T (0.0457)➅ TPCT4201 (0.031)➅ TPCT4203 (0.031)➅ TPC6004 (0.024)➅ TPCF8102 (0.030)➅ TPC8207 (0.02)➅ TPCS8211 (0.024)➅ TPCS8204 (0.017)➅ TPCS8102 (0.02)➅ TPCS8302 (0.035)➅ TPCS8212 (0.024)➅ TPCS8208 (0.017)➅ TPCS8213 (0.013)➅ TPCL4201 (0.031)➅ TPCL4203 (0.036)➅ TK6A55DA (1.48)➆ 2SK2838 (1.2)➁ 2SK2679 (1.2)➁ TPCA8010-H (0.45)➁ 5.5 5.6 2SJ516 (0.8)➁ TPCT4202 (0.038)➅ TPCT4204 (0.038)➅ TPC6011 (0.020)➅ TPC6005 (0.028)➅ TPCP8J01 (0.035) (-32V)➅ TPCF8104 (0.028)➅ TPCS8214 (0.135)➅ TPC8A01 (0.025)➅ TPC8212-H (0.021)➅ TPC8405 (0.026)➅ SSM3K315T (0.0415)➅ TPCL4202 (0.04)➅ SSM3K131TU (0.0415)➅ TK6A50D (1.48)➆ TK6A53D (1.3)➆ TK6P53D (1.3)➆ 2SK2602 (1.25)➁ 2SK2777 (1.25)➁ 2SK3312 (1.25)➁ TK6A65D (1.11)➆ 2SK4013 (1.7)➇ 2SK4014 (2.0)➇ TK6A60D (1.25)➆ 2SK3947 (1.4)➂ 6 TPC8216-H (0.020)➅ 6.5 2SK3879 (1.7)➇ 6.5 2SK3880 (1.7)➇ 7 TPCP8102 (0.018)➅ TPCF8001 (0.023)➅ TPC8406-H (0.027)➅ TPCF8002 (0.023)➅ TPC8406-H (0.03)➅ 2SK3633 (1.7)➇ TPCA8009-H (0.35)➁ TPC8210 (0.015)➅ 2SK2417 (0.5)➁ 2SK2914 (0.5)➁ TK8A55DA (1.07)➆ TK8A60DA (1.0)➆ 2SK2542 (0.85)➁ 2SK2776 (0.85)➁ 2SK3538 (0.85)➁ TK8A50D (0.85)➆ 2SK4042 (0.97)➂ TPC8110 (0.025)➅ 2SK2606 (1.2)➀ TK8A65D (0.84)➆ 2SK2847 (1.4)➀ 2SK3799 (1.3)➇ TPC8A01 (0.018)➄ 9.5 SSM6J409TU (0.0221)➅ TK9A55DA (0.86)➆ 2SK2350 (0.4)➁ TPC8053-H (0.0225)➅ 2SK3017 (1.25)➀ 2SK2952 (0.55)➁ 2SK2607 (1.2)➀ 2SK3473 (1.6)➇ 2SK3878 (1.3)➇ TPC8115 (0.01)➅ 8.3 8.5 9 9.5 2SJ200 (0.83) 2SK1529 (0.83) 2SK3497 (0.15) 2SJ618 (0.37) 2SK3669 (0.125)➆ TPC8109 (0.02)➅ TPC8119 (0.012)➅ TPC8A05-H (0.012)➅ 10 2SK2841 (0.55)➁ 2SK2949 (0.55)➁ 2SK3309 (0.65)➁ 2SK3310 (0.65)➁ 2SK2601 (1.0)➁ TK10A50D (0.72)➆ 2SK3869 (0.68)➂ 2SK2866 (0.75)➁ 2SK3265 (1.0)➇ 2SK2889 (0.75)➁ 2SK3438 (1.0)➁ 2SK3453 (1.0)➇ 2SK2968 (1.25)➀ 10 2SK3437 (1.0)➁ 2SK3399 (0.75)➁ TK10A60D (0.75)➆ 2SK4015 (0.86)➂ Product series ➃ : L2-π-MOSV ➇ : π-MOSIV 2SK2613 (1.7)➀ 8 TPCP8004 (0.009)➅ TPCP8006 (0.01)➅ 7 7.5 TPC8021-H (0.017)➅ 9 2SK1365 (1.8) 7.2 TPCA8020-H (0.027)➅ TPC8022-H (0.027)➅ TPC8116-H (0.03)➅ TPCA8107-H (0.03)➅ 8.3 8.5 2SK4115 (2.0)➇ TPCP8001-H (0.016)➅ 7.5 8 VDSS (V) ID (A) 4.2 SSM3J321T (0.046)➅ TPC8401 (0.038)➅ TPC6103 (0.035)➅ 5.6 Legend 1000 TPCP8103-H (0.040)➅ SSM3J132TU (0.0178)➅ 7.2 60 4.6 SSM3K309T (0.031)➅ 4.8 6 50 SSM3J129TU (0.046)➅ 4.7 5.5 40 ➀ : π-MOSIII ➁ : π-MOSV ➂ : π-MOSVI ➄ : L2-π-MOSVI ➅ : U-MOS ➆ : π-MOSVII ➉ : DTMOSII ➈ : DTMOSI Package PW-Mini VS-8 SOP-8 Lead Clamp SOP Advance S-Mini 10 TSM USM UFM VS-6 ♠ PS-8 STP TO-220NIS TO-220SIS SSM VESM TO-92MOD TO-220AB CST3 CST3B PW-Mold TO-220(W) CST4 New PW-Mold TFP SMV TSON Advance TO-220FL/SM US6 UF6 New PW-Mold2 DP TO-220SM(W) TO-3P(N) ES6 CST6D USV TPS TSSOP Advance TO-3P(N)IS UFV TSSOP-8 TO-3P(L) SOP-8 Chip LGA Notes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V drive ✽ = 1.8-V drive = High-speed diode N = N-ch ESV 11 P = P-ch CN = Complementary N-ch CP = Complementary P-ch NS = N-ch + SBD PD = P-ch + Driver PS = P-ch + SBD (load switch) [ ] = Under development 3 VDSS (V) ID (A) 11 12 Selection Guide (By Absolute Maximum Ratings) 20 30 N N N P P P P N N N P P 40 50 60 N TPC8025 (0.009)➅ TPC8021-H (0.017)➅ TPC8014 (0.014)➅ TPC8111 (0.012)➅ TPC8113 (0.01)➅ TPCS8105 (0.0135)➅ TPCS8104 (0.012)➅ TPC8030 (0.0095) TPC8031-H (0.0133)➅ TPCP8005-H (0.0129)➅ TPC8121 (0.012)➅ TPC8123 (0.0090)➅ N TPC8037-H (0.0114)➅ N TPC8038-H (0.0114)➅ NS TPC8A06-H (0.0101)➅ 75 80 100 150 200 TPC8050-H (0.0145)➅ 250 300 450 500 2SK2965 (0.26)➁ N TPC8052-H (0.0115)➅ 2SK3068 (0.52)➁ 2SK3398 (0.52)➁ TK12A50D (0.52)➆ 2SK3313 (0.62)➁ 2SJ201 (0.625) 2SK1530 (0.625) 2SJ380 (0.21)➃ N TPC8049-H (0.0107)➅ N 2SK2508 (0.25)➁ 2SK2598 (0.25)➁ TPC8051-H (0.0097)➅ 2SK3743 (0.4)➁ 2SK3403 (0.4)➁ 2SK3544 (0.4)➁ TK13A45D (0.46)➆ 2SJ304 (0.12) TK11A55D (0.63)➆ TK11A60D (0.65)➆ 900/1000 TK12A53D (0.58)➆ TK12X53D (0.58)➆ TK12J55D (0.57)➆ 2SK2699 (0.65)➁ TK12A60U (0.4)➉ TK12D60U (0.4)➉ TK12J60U (0.4)➉ TK12A60D (0.55)➆ 1000V: TPC8032-H (0.0065)➅ TPCC8102 (0.0189)➅ TK13A60D (0.43)➆ 2SK4016 (0.5)➂ 900V: 2SK1489 (1.0) 12.5 TK13A50D (0.4)➆ TK14A55D (0.37)➆ TK15A50D (0.3)➆ 2SK3314 (0.49)➁ TK15J50D (0.4)➆ 2SK2382 (0.18)➁ 2SK2401 (0.18)➁ TPCA8053-H (0.0223)➅ 17 N TPC8033-H (0.0053)➅ NS TPC8A03-H (0.0056)➅ N TPC8039-H (0.006)➅ 18 P N N N N N P N NS P P N N N TPC8047-H (0.0076)➅ N 2SJ412 (0.21)➃ 2SJ619 (0.21)➃ TPC8048-H (0.0069)➅ 2SK3903 (0.44)➂ 2SK2953 (0.4)➁ TK15A60U (0.3)➉ TK15D60U (0.3)➉ TK15J60U (0.3)➉ TK15A60D (0.37)➆ TK16J55D (0.37)➆ 2SK3935 (0.25)➂ 2SK4207 (0.95) 13 2SK2916 (0.4)➁ 15 NS TPC8A02-H (0.0056)➅ VDSS (V) ID (A) 12 2SJ312 (0.12) N P 14 15 16 2SK3905 (0.31)➂ 17 TPC8114 (0.0045)➅ N TPC8027 (0.0027)➅ N TPC8028 (0.0043)➅ TPC8029 (0.0038)➅ TPC8034-H (0.0035)➅ TPC8042 (0.0034)➅ TPC8117 (0.0039)➅ TPC8036-H (0.0045)➅ TPC8A04-H (0.0036)➅ TPC8120 (0.0032)➅ TPCC8103 (0.012)➅ TPC8035-H (0.0032)➅ TPC8060-H (0.0037)➅ TPC8045-H (0.0039)➅ TPC8046-H (0.0057)➅ NS TPCM8A05-H (0.0129)➅ N NS TPCA8A05-H (0.0129)➅ N TPCM8001-H (0.0095)➅ TPCA8052-H (0.0115)➅ 2SJ464 (0.12)➃ 2SK2882 (0.12)➁ 2SJ620 (0.09)➃ 2SK3387 (0.12)➃ 2SK2917 (0.27)➁ TK18A50D (0.27)➆ TPCA8006-H (0.067) 18 19 20 600 TK13A50DA (0.47)➆ N TPC8041 (0.007)➅ N TPC8026 (0.0066)➅ P TPC8107 (0.007)➅ P TPC8112 (0.006)➅ P TPC8118 (0.007) N TPCC8003-H (0.0169)➅ N TPC8040-H (0.0097)➅ 14 16 550 11 12.5 13 525 19 2SK3904 (0.26)➂ 2SJ349 (0.045)➃ 2SJ401 (0.045)➃ 2SK2782 (0.055)➃ 2SK2614 (0.046)➃ 2SK2391 (0.085)➃ TJ20A10M3 (0.090)➅ TK20J50D (0.27)➆ 2SK2993 (0.105)➁ 2SK3911 (0.32)➂ 2SK3445 (0.105)➁ TK20A60U (0.19)➉ 2SK3994 (0.105)➁ TK20D60U (0.19)➉ 20 TK20J60U (0.19)➉ 2SK3906 (0.33)➂ 21 22 23 Legend N TPCM8003-H (0.0129)➅ NS TPCC8A01-H (0.0099)➅ N N N TPCC8001-H (0.0083)➅ TPCC8002-H (0.0083)➅ TPCC8006-H (0.008)➅ N TPCA8040-H (0.0094)➅ Product series ➃ : L2-π-MOSV ➇ : π-MOSIV ➀ : π-MOSIII ➁ : π-MOSV ➂ : π-MOSVI ➄ : L2-π-MOSVI ➅ : U-MOS ➆ : π-MOSVII ➉ : DTMOSII ➈ : DTMOSI 21 22 TPCA8022-H (0.026)➅ 2SK3907 (0.23)➂ 2SK3936 (0.25)➂ Package PW-Mini VS-8 SOP-8 Lead Clamp SOP Advance S-Mini 12 TSM USM UFM VS-6 ♠ PS-8 STP TO-220NIS TO-220SIS SSM VESM TO-92MOD TO-220AB CST3 CST3B PW-Mold TO-220(W) CST4 New PW-Mold TFP SMV TSON Advance TO-220FL/SM US6 UF6 New PW-Mold2 DP TO-220SM(W) TO-3P(N) ES6 CST6D USV TPS TSSOP Advance TO-3P(N)IS UFV TSSOP-8 TO-3P(L) SOP-8 Chip LGA Notes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V drive 23 ✽ = 1.8-V drive = High-speed diode N = N-ch ESV 13 P = P-ch CN = Complementary N-ch CP = Complementary P-ch NS = N-ch + SBD PD = P-ch + Driver PS = P-ch + SBD (load switch) [ ] = Under development 3 VDSS (V) ID (A) Selection Guide (By Absolute Maximum Ratings) 20 30 24 N N N 25 P TPCM8102 (0.0077)➅ N TPCM8006 (0.007)➅ N TPCC8008 (0.0068)➅ 26 27 N N 40 50 60 TPCM8004-H (0.011)➅ TPCA8030-H (0.011)➅ TPCA8031-H (0.011)➅ TPCC8005-H (0.0064)➅ 75 80 100 200 250 300 450 500 525 550 600 900/1000 VDSS (V) ID (A) N TPCA8050-H (0.0142)➅ 24 2SK2507 (0.046)➃ 2SK2232 (0.046)➃ 2SK2311 (0.046)➃ N TPCA8016-H (0.021)➅ 2SK1544 (0.2) 2SK3444 (0.082)➁ 2SK3625 (0.082)➁ TK25A10K3 (0.040)➅ 25 26 2SK3846 (0.016)➃ 2SK2314 (0.085)➃ 2SK2789 (0.085)➃ TPCC8007 (0.0046)➅ 28 N TPCA8049-H (0.0104)➅ 27 28 N TPCA8051-H (0.0094)➅ 2SK3443 (0.055)➁ 2SJ334 (0.038)➃ 2SJ402 (0.038)➃ N TPCA8018-H (0.0062)➅ N TPCA8014-H (0.009)➅ N TPCM8002-H (0.0062)➅ N TPCA8027-H (0.010)➅ 30 150 2SK3176 (0.052)➁ 2SK2967 (0.068)➁ 2SK2995 (0.068)➁ 30 TK30A06J3A (0.026)➅ 2SK1486 (0.095) 2SK3847 (0.016)➅ N TPCA8047-H (0.0073)➅ 32 32 NS TPCA8A02-H (0.0053)➅ N TPCA8039-H (0.0057)➅ 34 34 N TPCA8024 (0.0043)➅ N TPCA8015-H (0.0054)➅ 35 2SK3662 (0.0125)➅ N TPCA8048-H (0.0066)➅ 35 36 2SK2385 (0.03)➃ 36 NS TPCA8A08-H (0.0042)➅ N TPCA8046-H (0.0054)➅ N TPCA8036-H (0.0038)➅ 38 N TPCA8011-H (0.0035)➅ P TPCA8102 (0.006)➅ P TPCA8103 (0.0042)➅ 40 P N N N 44 NS TPCA8A04-H (0.0032)➅ 45 $ N N N N 38 P TPCA8108 (0.0095)➅ N TK40P04M1 (0.011)➅ P TPCA8104 (0.016)➅ TK40A08K3 (0.009)➅ TK40J60T (0.08)➈ TK40D10J1 (0.015)➅ TK40A10J1 (0.015)➅ TK40A10K3 (0.015)➅ TPCA8106 (0.0037)➅ TPCA8012-H (0.0049)➅ TPCA8025 (0.0036)➅ TK40P03M1 (0.0108)➅ 40 TK40X10J1 (0.020)➅ 44 2SK3506 (0.02) TPCA8019-H (0.0031)➅ TPCA8026 (0.0022)➅ TPCA8042 (0.0033)➅ TPCA8060-H (0.0034)➅ 46 N TPCA8045-H (0.0036)➅ 50 N TPCA8028-H (0.0028)➅ N TK50P04M1 (0.0087)➅ N TK50P03M1 (0.0075)➅ $ 2SK2550 (0.03)➃ 2SK2886 (0.02)➃ $ 2SK2744 (0.02)➃ $ 2SK3051 (0.03)➃ 2SK2233 (0.03)➃ 2SK2266 (0.03)➃ 2SK2376 (0.017)➃ $ 2SK2398 (0.03)➃ 2SK3844 (0.0058)➅ $ 2SK2551 (0.011)➃ 2SK2173 (0.017)➃ 45 46 2SK1381 (0.032) TK50X15J1 (0.03)➅ TK50F15J1 (0.03)➅ $ 2SK2445 (0.018)➁ 2SK2745 (0.0095)➃ 55 2SK2267 (0.011)➃ 2SK2313 (0.011)➃ 60 TK60D08J1 (0.0078)➅ TK60A08J1 (0.0078)➅ 2SK3132 (0.09)➁ 2SK3131 (0.11)➁ 50 TK55D10J1 (0.0105)➅ TK55A10J1 (0.0105)➅ 55 2SK1382 (0.020) 60 TK70J04J3 (0.0038)➅ TK70X04K3 (0.0056)➅ TK70X04K3L (0.0056)➅ 2SK3845 (0.0058)➅ TK70D06J1 (0.0064)➅ TK70A06J1 (0.0064)➅ TJ70A06J3 (0.008)➅ TK70X06K3 (0.008)➅ 70 75 2SK3843 (0.0035)➅ 2SK4034 (0.0058)➅ 2SK3842 (0.0058)➅ 75 80 TK80X04K3(0.0035)➅ 70 TK80A08K3 (0.0045)➅ TK80D08K3 (0.0045)➅ TK100F04K3 (0.003)➅ TK100F04K3L (0.003)➅ 100 120 130 100 TJ120F06J3 (0.008)➅ 120 130 TK130F06K3 (0.0034)➅ TK150F04K3 (0.0021)➅ TK150F04K3L (0.0021)➅ 150 Legend 80 TK100F06K3 (0.005)➅ Product series ➃ : L2-π-MOSV ➇ : π-MOSIV ➀ : π-MOSIII ➁ : π-MOSV ➂ : π-MOSVI ➄ : L2-π-MOSVI ➅ : U-MOS ➆ : π-MOSVII ➉ : DTMOSII ➈ : DTMOSI 150 Package PW-Mini VS-8 SOP-8 Lead Clamp SOP Advance S-Mini 14 TSM USM UFM VS-6 ♠ PS-8 STP TO-220NIS TO-220SIS SSM VESM TO-92MOD TO-220AB CST3 CST3B PW-Mold TO-220(W) CST4 New PW-Mold TFP SMV TSON Advance TO-220FL/SM US6 UF6 New PW-Mold2 DP TO-220SM(W) TO-3P(N) ES6 CST6D USV TPS TSSOP Advance TO-3P(N)IS UFV ESV TSSOP-8 TO-3P(L) DPAK SOP-8 Chip LGA Notes: ( ) = RDS(ON) max $ = 10-V drive # = 2.5-V drive ✽ = 1.8-V drive = High-speed diode N = N-ch 15 P = P-ch CN = Complementary N-ch CP = Complementary P-ch NS = N-ch + SBD PD = P-ch + Driver PS = P-ch + SBD (load switch) [ ] = Under development 4 Low-VDSS MOSFETs (in Small SMD Packages) 4-1 Packaging Options SSM Series The SSM Series comes in small, thin packages suitable for portable devices. Chip-scale packages (1006 size) help reduce system size. CST3 CST3B VESM (SOT-723) SSM (SOT-416)(SC-75) Chip-Scale Package, Transfer Molded, 3-Pin Chip-Scale Package, Transfer Molded, 3-Pin, B-Type Very Extreme Super-Mini Small Super-Mini Ultra-Super-Mini Typical product: SSM3K35CT Typical product: SSM3J46CTB Typical product: SSM3K35MFV Typical product: SSM3K35FS Typical product: SSM3K15FU 1.2 Thickness: 0.48 typ. 0.8 0.8 1.6 2.0 Thickness: 0.7 typ. 1.2 5 Thickness: 0.9 typ. 3 1. 1. 0 0. Unit: mm 0. 3 2.1 Unit: mm 2 1.6 0. Unit: mm 0. Unit: mm 22 1.2 0. 25 0. 35 0. 15 Unit: mm Thickness: 0.5 typ. 8 0.8 1.2 0. 45 Thickness: 0.38 typ. 1. 0.6 0 USM (SOT-323)(SC-70) UFM S-Mini (SOT-346)(SC-59) TSM CST4 ESV (SOT-553) Ultra-super-Mini Flat lead Super-Mini Thin Super-Mini Chip-Scale Package, Transfer Molded, 4-Pin Extreme Super-mini, 5-pin Typical product: SSM3J130TU Typical product: SSM3K15F Typical product: SSM3J304T 1.6 Thickness: 2.9 0.7 typ. Typical product: SSM4K27CT Typical product: SSM5N15FE 2.9 Thickness: 1.1 typ. 1.2 Thickness: 0.55 typ. 9 1.6 1. 1. 0. 5 1. 3 Thickness: 0.38 typ. 0.8 1.2 5 Thickness: 0.7 typ. 0. 1.7 9 2.0 1.5 Unit: mm 1.6 Unit: mm 2 4 Unit: mm 0. 0. 2 2.8 0. Unit: mm 4 2.5 0. 3 Unit: mm 0. 2.1 USV (SOT-353)(SC-88A) UFV SMV (SOT-25)(SC-74A) CST6D ES6 (SOT-563) Ultra-Super-mini, 5-pin Ultra-super-mini, Flat lead, 5-pin Super-Mini, 5-pin Chip-Scale Package, Transfer Molded, 6-Pin, D-Type Extreme Super-mini, 6-pin Typical product: SSM5N15FU Typical product: SSM5H12TU Typical product: SSM5H14F Typical product: SSM6N37CTD Typical product: SSM6N36FE UF6 Ultra-Super-mini, 6-pin Ultra Super mini Flat lead 6-pin Typical product: SSM6N15FU Typical product: SSM6J409TU Thickness: 0.9 typ. 5 1.7 2.0 Thickness: 0.38 typ. 1.2 Thickness: 0.55 typ. 0. 15 0. 0. 5 35 1.6 Unit: mm Unit: mm 1.6 Unit: mm Thickness: 0.7 typ. 0. 0. 2.1 Unit: mm 3 Unit: mm 0. 2 0. 2.1 0.9 1.0 65 65 2.0 2.8 4 Unit: mm 3 2.1 0. Unit: mm US6 (SOT-353)(SC-88A) 1.2 Thickness: 1.1 typ. 0. 3 1. 0. 2 0. 2.1 2.9 2 Thickness: 0.7 typ. 0. 1.7 2.0 95 Thickness: 0.9 typ. 5 0. 1.2 65 2.0 1.6 TPC Series The TPC Series comes in small, thin packages suitable for portable devices. The latest TSON Advance package allows the maximum permissible power dissipation equivalent to SOP-8, but occupies 64% less board space. VS-8 PS-8 Chip LGA STP2 Very Thin & Small, 8-pin Progressive & Small 8-pin Series Land Grid Array Small Thin Package Typical product: TPC6003 Typical product: TPCF8101 Typical product: TPCP8402 Typical product: TPCL4201 2.8 1.5 9 1.59 φ0.3 Thickness: 0.25 typ. 3.4 Thickness: 0.65 typ. 0. Unit: mm Unit: mm 3.8 3 Unit: mm Unit: mm 0. 1.9 Thickness: 0.8 typ. Typical product: TPCT4204 1.6 65 0. 65 Unit: mm 0. 3 0. 9 0. 3 2.8 Thickness: 0.8 typ. 2.4 65 2.9 2.9 0. Thickness: 0.75 typ. 1.5 5 2.9 1.6 0. 33 VS-6 Very Thin & Small, 6-pin TSON Advance TSSOP-8 TSSOP Advance SOP-8 SOP Advance Typical product: TPCC8005-H Typical product: TPCS8208 Typical product: TPCM8001-H Typical product: TPC8035-H Typical product: TPCA8028-H 5.0 4.4 4.6 5 16 Unit: mm 5.0 5.0 Unit: mm 7 Thickness: 0.95 typ. 1. 2 1. 6.0 0. 4 Unit: mm 0. 6.4 Thickness: 1.6 typ. 6.0 4 Thickness: 0.75 typ. 0. 5 27 3.6 8 3.5 25 Unit: mm Thickness: 0.9 typ. 0. 65 0. 3 0. 3.3 4.4 0. 3.0 Thickness: 0.85 typ. 0. 25 3.1 65 3.3 Unit: mm 4-2 Application Examples and Block Diagrams Cell Phone (Power Supply Circuit) Battery charger Load switches Load switches P-ch: SSM3J130TU P-ch: SSM3J409TU P-ch: SSM3J120TU P-ch: SSM3J120TU P-ch: SSM6J51TU P-ch: SSM3J46CTB Power supply IC Control IC PA USB charging Power management switches BB-IC Li-ion battery CCD camera module P-ch: SSM3J114TU P-ch: SSM3J115TU DC-DC converters HS: SSM5G10TU (P-ch + Schottky Barrier Diode) LS: SSM5H12TU (N-ch + Schottky Barrier Diode) Notebook PC (Power Supply Circuit) DC-DC converters Power management switches Adapter Input V-Core HS: TPCA8030-H LS: TPCA8036-H LS: TPCA8028-H LS: TPCA8A04-H VGA HS: TPCA8030-H LS: TPCA8036-H LS: TPCA8028-H LS: TPCA8A04-H DDR HS: TPC8037-H LS: TPC8037-H TPC8A03-H P-ch: TPC8121 / 8118 / 8123 N-ch: TPC8030 / 8028 19 V Charger CPU Load switches P-ch: TPC6111 / TPCF8104 N-ch: TPC6011 / TPCF8002 P-ch: SSM3J117T / SSM3J321T N-ch: SSM3K315T / SSM3K7002F LDO HS: TPCP8005-H LS: TPCP8005-H Dual: TPC8216-H HS: TPC8037-H LS: TPC8037-H 3.3 V/5 V CMS16 HS: TPC8037-H LS: TPC8037-H 1.8V Battery 1 HS: TPC8037-H LS: TPC8037-H 1.5 V Battery 2 HS: TPC8037-H LS: TPC8037-H 1.05 V 17 LDO 4 Low-VDSS MOSFETs (in Small SMD Packages) 4-2 Application Examples and Block Diagrams Lithium-Ion Secondary Battery (Battery Protection Circuits) Notebook PCs Cell Phones (Example using P-channel MOSFETs) P- P- P+ Control IC Control IC P+ Microcontroller Dual N-ch MOSFET • STP2 Series • PS-8 (dual) • Chip LGA Single P-ch MOSFET x 2 • SOP Advance • SOP-8 • TSON Advance Single N-ch MOSFET x 2 • SOP Advance • SOP-8 • TSON Advance Motor Driver (Power Driver Circuit) Pre-driver Protection circuit Power driver circuit Interface Controller Motors P/N-ch complementary MOSFET • VS Series (dual) • PS Series (dual) • SOP Series (dual) 18 M 4-3 Low-VDSS MOSFET Roadmaps Roadmap for Trench MOSFETs ■ High-Speed, Low-VDSS U-MOS ■ Low-Ron Trench MOSFETs 30 30 N-ch, VDSS = 30 V 25 U-MOSIV Ron*A (mOhm*mm2) Pch Qsw (nC) 10 3 U- 1 1 5 10 RDS(ON) (mΩ) U- U- M M U-MOSIII U-MOSVI Nch 15 U-MOSIV 10 U-MOSVI 5 M O SI I SV I-H SV -H M O SV I-H IIH U- U-MOSV 20 O O 0 2005 2006 2007 2008 2009 Package Options 100 SOP Advance TSSOP Advance TSON Advance SOP-8 PS-8 10 VS-8 VS-6 Drain Current (A) UF6 Chip LGA UFM STP2 STP TSM TSSOP-8 S-Mini ES6 SMV CST3B UFV US6 1 VESM CST4 SSM USM ESV USV CST6D CST3 0.1 0.1 1 10 Footprint Area (mm2) 19 100 2010 4 Low-VDSS MOSFETs (in Small SMD Packages) ■ Ultra-Small Packages ESV CST6D 2.1 mm 1.6 mm 0.9 mm 2.1 mm 1.6 mm 1.2 mm 0.6 mm USV 0.425 mm 1.0 mm US6 0.2 mm 0.4 mm 0.425 mm CST3 1.2 mm 1.6 mm 2.0 mm 2.1 mm 2.9 mm VESM 1.6 mm 2.0 mm SSM 2.0 mm USM 2.5 mm 1.0 mm S-Mini 0.2 mm 0.425 mm 0.5 mm Footprint Area 7.3 mm2 4.2 mm2 2.6 mm2 1.4 mm2 0.6 mm2 4.2 mm2 4.2 mm2 2.6 mm2 0.9 mm2 Permissible Power Dissipation 0.2 W 0.2 W 0.1 W 0.15 W 0.1 W 0.2 W 0.2 W 0.15 W 0.14 W 1.4 mm 1.1 mm 0.9 mm 0.55 mm 0.4 mm 1.1 mm 1.1 mm 0.6 mm 0.4 mm (Note) Height (MAX) Note: Mounted on FR4 Boad (25.4 x 25.4 mm) ■ Thermally-Enhanced Compact Packages TSM SMV UF6 2.8 mm 2.8 mm UFM 2.1 mm CST3B 1.6 mm 0.8 mm CST4 0.8 mm 8.1 mm2 4.2 mm2 4.2 mm2 2.6 mm2 1.0 mm2 1.0 mm2 Permissible Power Dissipation 0.7 W 0.5 W 0.75 W 0.5 W 0.5 W 0.5 W 1.0 W 0.4 W 0.85 mm 0.75 mm 1.4 mm 0.75 mm 0.75 mm 0.6 mm 0.5 mm 0.4 mm 0.2 mm 1.6 mm 4.2 mm2 0.6 mm 2.0 mm 8.1 mm2 0.2 mm 0.6 mm 2.0 mm Footprint Area 2.0 mm 1.2 mm 2.1 mm ES6 1.2 mm 2.9 mm 2.1 mm 2.9 mm UFV 0.2 mm 0.2 mm (Note) Height (MAX) Note: Mounted on FR4 Boad (25.4 x 25.4 mm) 5 mm 3.5 mm PS-8 2.9 mm 2.9 mm 0.95 mm Chip LGA 1.59 mm 1.59 mm 1.9 mm 0.65 mm 3.3 mm VS-6 2.8 mm 2.9 mm 3.3 mm 4.65 mm 6 mm 5 mm VS-8 TSSOP Adv. TSON Adv. SOP-8 6 mm SOP Adv. ■ Compact Packages 2.8 mm ■ Thermally Enhanced Packages 0.65 mm Footprint Area 30 mm2 30 mm2 16.3 mm2 (−46%) 10.9 mm2 (−64%) Footprint Area 5.5 mm2 (–32%) 8.1 mm2 8.1 mm2 2.56 mm2 (–68%) Permissible Power Dissipation 2.8 W (+47%) 1.9 W 2.3 W (+21%) 1.9 W Permissible Power Dissipation 2.5 W (+14%) 2.2 W 1.68 W (–24%) — Height 1.0 mm (–47%) 1.9 mm 0.8 mm (–58%) 0.9 mm (–53%) Height 0.85 mm 0.85 mm 0.85 mm 0.25 mm (–71%) (Percentage relative to SOP-8) (Percentage relative to VS-6) 20 4-4 Low-VDSS, High-Speed MOSFETs Synchronous Rectification DC-DC Converters – Block Diagram, Timing Chart and Power Loss Factors ■ Block Diagram ■ Timing Chart Control IC-side (switch and high-side) MOSFETs D Vin Synchronous-side (low-side) MOSFET T ton(High) L S Vout G VGS(High) D Vcc Control IC Load G ton(Low) C S VGS(Low) High-side MOSFET: Turn-off loss VDS(High) High-side MOSFET: Conducting loss High-side MOSFET: Turn-on loss IDS(High) IDS(Low) Low-side MOSFET: Self-turn-on loss ISBD(SBD) VDS (Low+SBD) Dead time: Diode loss Low-side MOSFET: Conducting loss Dead time 1 Dead time 2 Synchronous Rectification DC-DC Converters – Summary Results of Power Loss Simulation and Key Parameters for MOSFETs 8.00 Key Parameters to Improve Efficiency 7.00 6.00 Efficiency 82.49% Conditions • Input Voltage: 19 V • Output Voltage: 1.5 V • Frequency: 1 MHz Synchronous-side MOSFET Very low RDS (ON) Others (drive loss, etc.) Dead time loss (off) 4.00 Efficiency 85.13% 3.00 2.00 Self-turn-on loss Synchronous-side (low-side) MOSFET Conducting loss 5.00 Dead time loss (on) Efficiency 83.20% Turn-on loss Conducting loss Turn-on loss 1.00 Switch-side (high-side) MOSFET Power Dissipation (W) Reduction of the self-turn-on losses Low Qrr Low Cgd, Cgd/Cgs Low rg Optimized Vth Shoot-through current control Low Qg Switch-side MOSFET High-speed switching Low Qsw Low rg Low RDS (ON) 0.00 5 10 20 Output Current (A) 21 4 Low-VDSS MOSFETs (in Small SMD Packages) Synchronous Rectification DC-DC Converters – Efficiency Improvement by Thermally Enhanced Package and New Process Technology ■ Thermally Enhanced Package Toshiba has developed the SOP Advance package with the same footprint area as the standard SOP-8 package. With an external heatsink on the bottom, the SOP Advance package offers enhanced thermal characteristics, realizing a high power dissipation and thus high-current capability. Unit: mm SOP Advance 6.0 6.0 SOP-8 5.0 1.0 Max 1.9 Max 5.0 SOP-8 30 1.9 65.8 18 1.6 (mm2) (mm) (˚C / W) (A) (mΩ) Footprint Area Total height (max) Rth(ch-a) (t = 10 s) (Note 1) Current rating Package resistance (Note 2) Note 1: When mounted on a glass-epoxy board (25.4 mm x 25.4 mm x 0.8 mm) SOP Advance 30 1.0 44.6 40 0.5 Features of the SOP Advance Same footprint area as the SOP-8 Low profile, Thinner by 0.9 mm High power dissipation High current-carrying capacity Low package resistance Note 2: Without chip resistance ■ New Process Technology Toshiba has developed a new process technology to further reduce an internal gate resistance (rg) and gate capacitance ratio (Cgd/Cgs) for minimizing the self-turn-on loss while maintaining both the low ON-resistance and low gate charge characteristics. TPCA8028-H (New generation) TPCA8019-H (One gen. ago) TPCA8004-H (Two gen. ago) RDS(ON) Typ. @4.5 V (mΩ) 2.3 3.1 4.8 Cgd/Cgs Typ. (%) 6.8 6.6 12.7 rg Typ. (Ω) 1.0 1.0 2.4 Efficiency Characteristics f = 300 kHz, VIN = 19.5 V, VOUT = 1.1 V 90 Two low-side MOSFETs 88 88 86 86 84 84 Efficiency (%) Efficiency (%) 90 82 80 High-side MOSFET 78 Low-side MOSFET TPCA8030-H (1p) + TPCA8028-H (2p) TPCA8030-H (1p) + TPCA8036-H (2p) 76 TPCA8023-H (1p) + TPCA8019-H (2p) One low-side MOSFET 82 80 High-side MOSFET 78 Low-side MOSFET TPCA8030-H (1p) + TPCA8028-H (1p) New device TPCA8030-H (1p) + TPCA8036-H (1p) 76 Conventional device TPCA8023-H (1p) + TPCA8019-H (1p) New device Conventional device 74 74 0 5 10 15 20 25 Output Current (A) 0 5 10 15 Output Current (A) 22 20 25 Synchronous Rectification DC-DC Converters – MOSBD (MOSFET with SBD) ■ External SBD ● Dead time ● Low-side MOSFET turned on ● High-side MOSFET turned on LS LS LA LA Large lrr Current Current Current 1: Increase in the conducting loss of the body diode. 2: Increase in the reverse recovery loss due to high di/dt. 3: Induces a self-turn-on phenomenon. When an SBD is added externally, the SBD can’t function fully due to the influence of wire inductances (Ls and LA); thus a body diode current during the dead time becomes larger and causes the following penalties. ■ MOSFET with SBD (MOSBD) A MOSFET with SBD using a monolithic structure reduces a wire inductance (LA) and a parasitic inductance (LS). This structure makes it possible for the SBD to function fully and to reduce losses. ● Current Waveform Simulation Using External SBD MOSFET with SBD (MOSBD) 20 20 MOSFET channel current MOSFET channel current Body diode current 10 10 SBD current 0.0 0.0 SBD current Body diode current -10 -20 691.01μ -10 691.04μ 691.07μ -20 691.01μ 691.10μ 691.04μ time (s) 691.07μ 691.10μ time (s) LS = LA = 0.5 nH LS = LA = 0.01 nH Efficiency Characteristics f = 300 kHz, VIN = 19.5 V, VOUT = 1.1 V 90 Two low-side MOSFETs 88 88 86 86 84 84 Efficiency (%) Efficiency (%) 90 82 80 High-side MOSFET 78 82 80 Low-side MOSFET 78 TPCA8030-H (1p) + TPCA8A04-H (2p) MOSBD (For heavy-load applications) TPCA8030-H (1p) + TPCA8A02-H (2p) MOSBD (For light-load applications) 76 One low-side MOSFET High-side MOSFET Low-side MOSFET TPCA8030-H (1p) + TPCA8A04-H (1p) MOSBD 76 Standard TPCA8030-H (1p) + TPCA8019-H (1p) MOSFET TPCA8030-H (1p) + TPCA8019-H (2p) Standard MOSFET 74 74 0 5 10 15 20 25 0 5 10 15 Output Current (A) Output Current (A) 23 20 25 4 Low-VDSS MOSFETs (in Small SMD Packages) High-Speed MOSFET Offerings Absolute Maximum Ratings Part Number TPCA8011-H TPC6007-H TPC6109-H TPC8216-H ✩ TPCP8005-H ✩ TPCC8003-H ✩ TPCC8001-H ✩ TPCC8002-H ✩ TPCC8006-H ✩ TPCC8005-H ✩ TPCM8003-H ✩ TPCM8004-H ✩ TPCM8002-H ✩ TPC8021-H TPC8031-H ✩ TPC8037-H ✩ TPC8038-H ✩ TPC8040-H ✩ TPC8032-H ✩ TPC8033-H ✩ TPC8039-H ✩ TPC8034-H ✩ TPC8036-H ✩ TPC8035-H ✩ TPCA8023-H ✩ TPCA8040-H ✩ TPCA8030-H ✩ TPCA8031-H ✩ TPCA8018-H ✩ TPCA8039-H ✩ TPCA8036-H ✩ TPCA8012-H ✩ TPCA8060-H ✩ TPCA8019-H ✩ TPCA8028-H ✩ TPC6006-H TPC8022-H TPC8052-H ✩ TPC8047-H ✩ TPC8046-H ✩ TPC8045-H ✩ TPCA8020-H TPCA8052-H ✩ TPCA8014-H TPCA8027-H TPCA8047-H ✩ TPCA8015-H TPCA8046-H ✩ TPCA8045-H ✩ VDSS (V) VGSS (V) ID (A) 20 ±12 40 Package 16 U-MOSIII-H 1.8 U-MOSIII-H 3.5 — 79 — 83 59 4.8 U-MOSIII-H SOP-8 — 23.0 20 3.4 U-MOSVI-H PS-8 — 15.7 12.9 5.0 U-MOSV-H — 19.3 16.9 4.2 U-MOSVI-H — 10.6 8.3 7.1 U-MOSV-H — 10.6 8.3 7.1 U-MOSV-H 22 — 9.3 8.0 7.4 U-MOSVI-H 26 — 7.4 6.4 9.1 U-MOSVI-H 21 — 15.7 12.9 5.0 U-MOSV-H — 13.4 11 5 U-MOSV-H 30 — 8.2 6.2 9.3 U-MOSV-H 11 — 25 17 3.6 U-MOSIII-H 11 — 16.1 13.3 5.0 U-MOSV-H U-MOSV-H –5 P-ch Single 6.4 N-ch Dual VS-6 22 22 TSON Advance TSSOP Advance 24 10 V 12 — 13.9 11.4 5 12 — 13.9 11.4 5 U-MOSV-H 13 — 11.1 9.7 5.1 U-MOSVI-H U-MOSV-H — 8.6 6.5 8.4 17 — 7.2 5.3 9.6 U-MOSV-H 17 — 6.9 6.0 8.5 U-MOSVI-H 15 SOP-8 18 — 4.5 3.5 16 U-MOSV-H 18 — 5.1 4.5 13 U-MOSVI-H U-MOSVI-H 18 — 3.6 3.2 17 21 — 15.7 12.9 5.0 U-MOSV-H 23 — 10.8 9.4 5.7 U-MOSVI-H — 13.4 11.0 5 U-MOSV-H — 13.4 11.0 5 U-MOSV-H — 8.2 6.2 9.3 U-MOSV-H — 6.6 5.7 8.6 U-MOSVI-H 38 — 4.8 4.2 13 U-MOSVI-H 40 — 6.8 4.9 11.0 U-MOSV-H 45 — 3.9 3.4 17 U-MOSVI-H 45 — 4.1 3.1 15.5 U-MOSV-H 50 — 3.2 2.8 20 U-MOSVI-H U-MOSIII-H 24 N-ch Single 24 30 SOP Advance 34 VS-6 — 100 75 1.3 7.5 — 35 27 3.5 U-MOSIII-H 12 — 13.3 11.5 6.6 U-MOSVI-H 3.9 — 8.8 7.6 11 U-MOSVI-H 18 — 6.6 5.7 15 U-MOSVI-H 18 — 4.4 3.9 23 U-MOSVI-H 7.5 — 35 27 3.5 U-MOSIII-H 20 — 13.1 11.3 6.6 U-MOSVI-H 30 — 14 9 7.4 U-MOSIII-H 30 — — 10 8.1 U-MOSIII-H — 8.5 7.3 13 U-MOSVI-H 35 — 7.9 5.4 13 U-MOSIII-H 38 — 6.3 5.4 15 U-MOSVI-H 46 — 4.1 3.6 23 U-MOSVI-H 16 40 — 54 7.5 SOP Advance N-ch Single 11 ±20 Series 4.5 V 13 30 Qsw Typ.(nC) @VDS = VDSS x 0.8 2.5 V 5 30 –30 RDS(ON) Max (mΩ) Circuit Configuration SOP-8 SOP Advance 32 ✩: No protection Zener diode between gate and source 24 TPC8218-H ✩ TPC8213-H TPC8053-H ✩ TPC8050-H ✩ TPC8049-H ✩ TPC8048-H ✩ TPCA8053-H ✩ TPCA8050-H ✩ TPCA8016-H TPCA8049-H ✩ TPCA8048-H ✩ TPC8051-H ✩ TPCA8051-H ✩ TPCP8003-H TPC8214-H TPCA8022-H TPCA8009-H TPCA8010-H TPCA8008-H TPCP8A05-H ✩ TPCC8A01-H ✩ TPCM8A05-H ✩ TPC8A05-H ✩ TPC8A06-H ✩ TPC8A03-H ✩ TPC8A04-H ✩ TPCA8A05-H ✩ TPCA8A02-H ✩ TPCA8A08-H ✩ TPCA8A04-H ✩ TPCP8103-H TPC8116-H TPCA8107-H TPC8406-H VDSS (V) VGSS (V) RDS(ON) Max (mΩ) 4.5 V 10 V Qsw Typ.(nC) @VDS = VDSS x 0.8 Series 64 57 2.6 U-MOSVI-H 56 50 2.9 U-MOSIII-H 24.2 22.5 6.7 U-MOSVI-H 11 15.6 14.5 9.2 U-MOSVI-H 13 11.5 10.7 13 U-MOSVI-H 16 7.4 6.9 17 U-MOSVI-H 15 24 22.3 6.9 U-MOSVI-H 24 15.3 14.2 10 U-MOSVI-H 26 21 6.6 U-MOSIII-H 11.2 10.4 13 U-MOSVI-H Absolute Maximum Ratings Part Number ID (A) 3.8 5 Circuit Configuration Package N-ch Dual 9 60 SOP-8 N-ch Single 25 SOP Advance 28 7.1 6.6 19 U-MOSVI-H 13 SOP-8 10.1 9.7 16 U-MOSVI-H 28 SOP Advance 9.8 9.4 18 U-MOSVI-H 2.2 PS-8 190 180 2.0 U-MOSIII-H SOP-8 190 180 2.0 U-MOSIII-H 22 SOP Advance — 26 14 U-MOSIII-H 7 SOP Advance — 350 3.7 π-MOSV SOP Advance — 450 3.7 π-MOSV 35 80 2.2 100 150 200 250 30 ±20 5.5 N-ch Dual N-ch Single 4 SOP Advance — 580 3.7 π-MOSV 8 PS-8 21.9 17.5 2.7 U-MOSV-H 21 TSON Advance 12.6 9.9 4.1 U-MOSV-H 20 TSSOP Advance 17.2 12.9 3.7 U-MOSV-H 10 17.6 13.3 3.7 U-MOSV-H 12 12.9 10.1 4.5 U-MOSV-H 7.0 5.6 8.4 U-MOSV-H 18 4.5 3.6 13.4 U-MOSV-H 20 17.2 12.9 3.7 U-MOSV-H 17 SOP-8 MOSBD 6.7 5.3 8.6 U-MOSV-H 38 5.1 3.9 11 U-MOSV-H 44 4.1 3.2 13.4 U-MOSV-H PS-8 54 40 6.5 U-MOSIII-H SOP-8 37 30 9.7 U-MOSIII-H SOP Advance 37 30 9.7 U-MOSIII-H 35 27 3.5 U-MOSIII-H 37 30 9.7 U-MOSIII-H 34 SOP Advance –4.8 –40 –7.5 P-ch Single –7.5 40 –40 6.5 –6.5 N-ch/P-ch Dual SOP-8 ✩: No protection Zener diode between gate and source 25 4 Low-VDSS MOSFETs (in Small SMD Packages) 4-5 Low-VDSS, Low-RDS(ON) MOSFETs (for Lithium-Ion Battery Protection) Lithium-Ion Battery Protection Circuit Trend Lithium-Ion Secondary Battery Protection 2003 4.03.5 mm Control IC PCM LiB TSSOP-8 (6.4 mm x 3.3 mm x 0.9 mm) STP (3.8 mm x 2.0 mm x 0.6 mm) 2004 3.03.5 mm STP2 (3.8 mm x 1.6 mm x 0.6 mm) 2006 3.0 mm MOSFET Roadmap 2003 2004 2005 2006 2007 2008 2009 2010 TSSOP Advance For Laptop PCs SOP Advance SOP-8 TSON Advance P-ch U-MOSIV U-MOSV U-MOSIV N-ch For Cell Phones, Digital Cameras and PVC U-MOSVI U-MOSVI PS-8 STP STP2 TSSOP-8 Chip LGA MOSFET + Control IC N-ch U-MOSIV U-MOSV 26 U-MOSVI Low-ON-resistance N-Channel Power MOSFETs Absolute Maximum Ratings Part Number VDSS (V) VGSS (V) ID (A) TPCT4203 ✩ TPCT4204 ✩ TPCL4201 ✩ TPCL4203 ✩✽ TPCL4202 ✩✽ TPCP8006 ✩ TPCP8004 ✩ TPCP8202 20 30 20 24 30 20 30 30 ±12 ±12 ±12 ±12 ±12 ±12 ±20 ±12 6 6 6 6 6 9.1 8.3 5.5 TPCC8007 ✩✽ TPCC8008✩ TPC8025 ✩ TPC8030 ✩ TPC8041 ✩ TPC8026 ✩ TPC8028 ✩ TPC8029 ✩ 20 30 30 30 30 30 30 30 30 30 20 20 30 30 30 30 30 30 ±12 ±25 ±20 ±25 ±20 ±20 ±20 ±20 ±20 ±20 ±12 ±12 ±20 ±20 ±20 ±20 ±20 ±20 27 25 11 11 13 13 18 18 18 18 5 6 5.5 8 35 40 45 45 TPC8042 ✩ TPC8027 ✩ TPC8208 TPC8207 TPC8211 TPC8210 TPCA8024 ✩ TPCA8025 ✩ TPCA8042 ✩ TPCA8026 ✩ RDS(ON) Max (mΩ) Circuit Configuration Package STP2 N-ch Dual Chip LGA N-ch Single PS-8 N-ch Dual TSON Advance N-ch Single SOP-8 N-ch Dual N-ch Single SOP Advance 2.5 V 4V 4.5 V 10 V 49 52 52 55 64 13.7 — 39 (8.7) — — — 32 39 — — — — — 24 — — — — — — 31 36 40 10 14 23 (4.6) 12.8 14.5 17 — — — — — — 8.5 — — 6.8 9 9 — — — — — — 70 30 — — — — — — — — — — — — 50 20 — — — — — — 13.5 10 8 7 6.6 4.3 3.8 3.4 2.7 — — 36 15 4.3 3.5 3.3 2.2 7 6.5 5.5 — — 44 20 7.8 6.0 5.7 4.5 Series U-MOSIV U-MOSIV U-MOSV U-MOSV U-MOSV U-MOSIV U-MOSIV U-MOSIV U-MOSIV U-MOSIV U-MOSIV U-MOSIV U-MOSIV U-MOSIV U-MOSIV U-MOSIV U-MOSIV U-MOSIV U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSIV U-MOSIV U-MOSIV U-MOSIV ✩: No protection Zener diode between gate and source ✽: Under development Low-ON-resistance P-Channel Power MOSFETs Absolute Maximum Ratings Part Number VDSS (V) VGSS (V) ID (A) TPCC8102 ✩ TPCC8103 ✩ –30 –30 ±20 ±20 –15 –18 TPC8115 –20 ±8 –10 TPC8119 ✩ TPC8121 ✩ –30 –30 ±20 ±20 TPC8111 TPC8113 –30 –30 TPC8123 ✩ TPC8122 ✩ RDS(ON) Max (mΩ) Circuit Configuration Package Series 2.5 V 4V 4.5 V 10 V — — 14 33.2 22 — — — 10 18.9 12 — U-MOSIV –10 –11 — 28 — 13 U-MOSV — 24 — 12 ±20 ±20 –11 –11 — 18 — 12 U-MOSV U-MOSIV –30 –30 –25/+20 ±20 –11 –12 TPC8118 ✩ –30 –13 TPC8114 TPC8117 ✩ –30 –30 ±20 ±20 TPC8120 ✩ ±20 –18 –18 –30 –25/+20 –18 TPC8405 30 –30 ±20 ±20 6 –4.5 TPCM8102 ✩ –30 ±20 –25 TPCA8105 –12 ±8 –6 TPCA8103 –30 –30 ±20 ±20 –40 –40 TPCA8106 ✩ TSON Advance P-ch Single SOP-8 N-ch/P-ch Dual TSSOP Advance P-ch Single SOP Advance ✩: No protection Zener diode between gate and source 27 U-MOSV U-MOSV — 18 — 10 U-MOSIV — — 12.5 9 U-MOSVI — 16.5 — 8 U-MOSV — — 15 6.8 — — 7 4.5 U-MOSV — 7.9 — 3.9 U-MOSV — — 4.2 3.2 U-MOSVI — — — — 33 42 26 33 U-MOSIV — 16 — 7.7 51 33 — — — — 6.8 7.8 — — 4.2 3.7 U-MOSIV U-MOSIII U-MOSV U-MOSIV U-MOSIV U-MOSV 4 Low-VDSS MOSFETs (in Small SMD Packages) 4-6 Semi-Power MOSFET Offerings Semi-Power P-Channel Single MOSFETs Package Part Number VDSS (V) VGSS (V) ID (A) Unit: mm VGS = l 1.5 V l RDS(ON) Max (mΩ) VGS = VGS = l 1.8 V l l 2.5 V l VGS = l 4.0 V l Ciss (pF) Series *Internal Connections –20 ±8 –2.0 250 178 133 103 (@4.5 V) 290 U-MOSVI G 0.48 –3.3 108 73.7 45.6 43.4(@4.5V) 834 U-MOSVI SSM6J53FE –20 ±8 –1.8 364 204 136 — 568 U-MOSIV SSM6J206FE –20 ±8 –2.0 — 320 186 130 335 U-MOSIII SSM6J205FE –20 ±8 –0.8 — 460 306 234 250 U-MOSIII SSM6J26FE –20 ±8 –0.5 — 980 330 230 250 U-MOSIII SSM6J23FE –12 ±8 –1.2 — — 210 160 420 U-MOSIII SSM6J25FE –20 ±12 –0.5 — — 430 260 218 U-MOSIII SSM6J207FE –30 ±20 –1.4 — — — 491 137 U-MOSII SSM3J132TU✽ –12 ±5 –5.0 40.4 28.3 21.7 17.8(@4.5V) 2700 U-MOSVI SSM3J130TU –20 ±8 –4.4 63.2 41.1 31 25.8(@4.5V) 1800 U-MOSVI SSM3J120TU –20 ±8 –4.0 140 78 49 38 1484 SSM3J129TU –20 ±8 –4.6 137 88 62 46(@4.5V) 640 U-MOSV SSM3J115TU –20 ±8 –2.2 353 193 125 98 568 U-MOSIV SSM3J110TU –12 ±8 –2.3 — 240 145 94 550 U-MOSIII SSM3J109TU –20 ±8 –2.0 — 300 172 130 335 U-MOSIII SSM3J114TU –20 ±8 –1.8 526 321 199 149 331 U-MOSIV SSM3J108TU –20 ±8 –1.8 — 363 230 158 250 U-MOSIII SSM3J113TU –20 ±12 –1.7 — — 249 169 370 U-MOSIII SSM3J111TU –20 ±12 –1.0 — — 680 480 160 U-MOSIII SSM3J117TU –30 ±20 –2.0 — — — 225 280 U-MOSII SSM3J118TU –30 ±20 –1.4 — — — 480 137 U-MOSII SSM3J112TU –30 ±20 –1.1 — — — 790 86 SSM6J409TU –20 ±8 –9.5 72.3 46.3 30.2 SSM6J51TU –12 ±8 –4.0 150 85 54 — 1700 U-MOSIV SSM6J50TU –20 ±10 –2.5 — 205 (@2.0V) 100 64 (@4.5V) 800 U-MOSIV SSM6J21TU –12 ±12 –3.0 — — 88 50 1300 U-MOSIII SSM6J401TU –30 ±20 –2.5 — — — 145 730 U-MOSIII SSM6J402TU –30 ±20 –2.0 — — — 225 280 U-MOSIII US6(SOT-363) SSM6J08FU –20 ±12 –1.3 — 460 (@2.0V) 260 180 370 U-MOSII SSM6J06FU –20 ±12 –0.65 — — 700 500 160 π-MOSVI SSM6J07FU –30 ±20 –0.8 — — — 800 130 π-MOSVI SSM3J307T –20 ±8 –5.0 83 56 40 31(@4.5V) 1170 U-MOSV SSM3J321T –20 ±8 –5.2 137 88 62 46(@4.5V) 640 U-MOSV SSM3J326T✽ –30 ±12 –5.6 — 115 62.5 45.7(@4.5V) 640 U-MOSVI SSM3J13T –12 ±8 –3.0 — 180 (@2.0V) 95 70 890 U-MOSIII SSM3J312T –12 ±8 –2.7 — 237 142 91 550 U-MOSIII SSM3J304T –20 ±8 –2.3 — 297 169 127 335 U-MOSIII SSM3J317T –20 ±8 –3.6 — 306 144 107(@4.5V) 390 U-MOSIII SSM3J313T –20 ±8 –1.6 — 640 396 268 170 U-MOSIII SSM3J01T –30 ±10 –1.7 — — 600 400 240 π-MOSVI SSM3J02T –30 ±10 –1.5 — — 700 500 150 π-MOSVI SSM3J314T –30 ±20 –3.5 — — — 100 505 U-MOSIII-H SSM3J14T –30 ±20 –2.7 — — — 170 413 U-MOSII SSM3J306T –30 ±20 –2.4 — — — 225 280 U-MOSII SSM3J305T –30 ±20 –1.7 — — — 477 137 U-MOSII SSM3J327F✽ –20 ±8 –3.5 242 170 125 95(@4.5V) 290 U-MOSVI SSM3J325F✽ –20 ±8 –2.0 362 252 191 155(@4.5V) 226 U-MOSVI 2.0 2.0 0.7 0.9 2.8 TSM 2.9 0.7 0.8 0.65 0.65 U-MOSII U-MOSV 0.45 1.9 2.1 UF6 22.1(@4.5V) 1100 0.5 0.65 0.65 0.8 1.0 0.7 2.0 U-MOSIV 1.9 2.1 UFM 1.0 0.5 0.5 0.8 0.55 0.3 2.4 1.6 ES6 (SOT-563) 0.25 0.45 1.35 ±8 2.1 TOP VIEW SSM6J212FE✽ –20 1.6 S 0.65 SSM3J46CTB 0.45 1.2 D 0.25 0.65 0.7 CST3B 0.8 Land Pattern Example 0.95 0.95 S-Mini 1.0 2.4 2.5 0.8 2.9 ± 0.2 0.95 1.1 0.95 * The internal connection diagrams only show the general configurations of the circuits. ✽: Under development 28 Semi-Power N-Channel Single MOSFETs ID (A) VGS = l 1.5 V l VGS = l 1.8 V l VGS = l 2.5 V l VGS = l 4.0 V l Ciss (pF) Series SSM4K27CT 2.1 0.9 2.8 TSM 2.9 260 205 174 U-MOSIII 0.7 G S 0.2 TOP VIEW 20 ±10 3.2 118 82 59 47(@4.5 V) 510 U-MOSIII SSM6K203FE 20 ±10 2.8 153 106 76 61 400 U-MOSIII SSM6K202FE 30 ±12 2.3 — 145 101 85 270 U-MOSIII SSM6K204FE 20 ±10 2.0 307 214 164 126 195 U-MOSIII SSM6K208FE 30 ±12 1.9 — 296 177 133 123 U-MOSIII SSM6K25FE 20 ±12 0.5 — 395 190 145 268 U-MOSIII SSM6K24FE 30 ±12 0.5 — — 180 145 245 U-MOSIII SSM6K22FE 20 ±12 1.4 — — 230 170 125 U-MOSIII SSM6K210FE 30 ±20 1.4 — — — 371 57 U-MOSIII SSM6K30FE 20 ±20 1.2 — — — 420 60 π-MOSVII SSM6K31FE 20 ±20 1.2 — — — 540 36 π-MOSVII SSM3K123TU 20 ±10 4.2 66 43 32 28 1010 U-MOSIII SSM3K121TU 20 ±10 3.2 140 93 63 48 400 U-MOSIII SSM3K104TU 20 ±12 3.0 — 110 74 56 320 U-MOSIII SSM3K119TU 30 ±12 2.5 — 134 90 74 270 U-MOSIII SSM3K102TU 20 ±12 2.6 — 154 99 71 268 U-MOSIII SSM3K122TU 20 ±10 2.0 304 211 161 123 195 U-MOSIII SSM3K101TU 20 ±12 2.2 — 230 138 103 125 U-MOSIII SSM3K127TU 30 ±12 2.0 — 286 167 123 123 U-MOSIII SSM3K116TU 30 ±12 2.2 — — 135 100 245 U-MOSIII SSM3K131TU 30 ±20 6.0 — — — 41.5(@4.5 V) 450 U-MOSIV SSM3K124TU 30 ±20 2.4 — — — 120 180 SSM3K105TU 30 ±20 2.1 — — — 200 102 π-MOSVI SSM3K128TU 30 ±20 1.5 — — — 360 57 U-MOSIII SSM3K107TU 20 ±20 1.5 — — — 410 60 π-MOSVII SSM3K106TU 20 ±20 1.2 — — — 530 36 π-MOSVII SSM6K403TU 20 ±10 4.2 66 43 32 28 1050 U-MOSIII SSM6K404TU 20 ±10 3.0 147 100 70 55 400 U-MOSIII SSM6K405TU 20 ±10 2.0 307 214 164 126 195 U-MOSIII SSM6K18TU 20 ±12 4.0 — — 54 40 1100 U-MOSIII SSM6K406TU 30 ±20 4.4 — — — 38.5 (@4.5 V) 490 U-MOSIV SSM6K34TU 30 ±20 3.0 — — — 77 (@4.5 V) 470 U-MOSIII SSM6K407TU 60 ±20 2.0 — — — 440 150 π-MOSV SSM6K32TU 60 ±20 2.0 — — — 440 140 π-MOSV SSM6K08FU 20 ±12 1.6 — 210 (@2.0 V) 140 105 306 U-MOSII SSM6K06FU 20 ±12 1.1 — — 210 160 125 π-MOSVI SSM6K07FU 30 ±20 1.5 — — — 220 102 π-MOSVI SSM3K310T 20 ±10 5.0 66 43 32 28 1120 U-MOSIII SSM3K309T 20 ±12 4.7 — 47 35 31 1020 U-MOSIII SSM3K301T 20 ±12 3.5 — 110 74 56 320 U-MOSIII SSM3K316T 30 ±12 4.0 — 131 87 65(@4.5 V) 270 U-MOSIII SSM3K01T 30 ±10 3.2 — — 150 120 152 π-MOSVI SSM3K02T 30 ±10 2.5 — — 250 200 115 π-MOSVI SSM3K315T 30 ±20 6.0 — — — 41.5(@4.5 V) 450 U-MOSIV SSM3K14T 30 ±20 4.0 — — — 67 460 SSM3K320T 30 ±20 4.2 — — — 77(@4.5 V) 190 U-MOSIV SSM3K303T 30 ±20 2.9 — — — 120 180 π-MOSVII SSM3K12T 30 ±20 3.0 — — — 175 120 π-MOSVII SSM3K318T 60 ±20 2.5 — — — 145(@4.5 V) 235 U-MOSIV 0.3 1.0 0.5 0.5 0.5 0.8 SSM6K211FE 0.65 0.65 π-MOSVII U-MOSII 0.45 1.9 2.1 0.7 US6(SOT-363) 2.0 390 0.65 0.65 0.8 1.0 2.1 0.7 UF6 2.0 — 0.5 1.35 1.6 0.55 UFM 2.0 0.5 0.38 ES6 (SOT-563) 1.6 ±12 D 1.9 0.8 20 D Land Pattern Example 0.8 1.2 CST4 *Internal Connections 0.75 VGSS (V) 0.45 VDSS (V) 0.3 Part Number 2.4 Package Unit: mm RDS(ON) Max (mΩ) 0.95 0.95 * The internal connection diagrams only show the general configurations of the circuits. 29 4 Low-VDSS MOSFETs (in Small SMD Packages) Semi-Power Dual MOSFETs Unit: mm Part Number ES6 (SOT-563) N-ch x 2 SSM6N42FE✽ 20 ID (A) ±10 0.77 RDS(ON) Max (mΩ) Ciss VGS = VGS = VGS = VGS = (pF) l 1.5 V l l 1.8 V l l 2.5 V l l 4.0 V l 630 460 260 (@4.5 V) 340 Series *Internal Connections Land Pattern Example Q1 95 0.3 U-MOSIII Q2 1.6 1.0 0.5 0.5 P-ch x 2 N-ch x 2 P-ch x 2 SSM6P41FE 1040 670 440 300 (@4.5 V) 110 U-MOSV Q2 20 ±10 1.6 247 190 139 119 260 U-MOSIII 20 ±12 0.8 — 235 178 143 268 U-MOSIII SSM6N25TU 20 ±12 0.5 — 395 190 145 268 U-MOSIII SSM6N24TU 30 ±12 0.5 — — 180 145 245 U-MOSIII SSM6N40TU 30 ±20 1.6 — — — 182 180 U-MOSIII SSM6P54TU –20 ±8 –1.2 555 350 228 — 331 U-MOSIV SSM6P39TU –20 ±8 –1.5 — 430 294 213 250 U-MOSIII SSM6P28TU –20 ±8 –0.8 — 460 306 234 250 U-MOSIII SSM6P26TU –20 ±8 –0.5 — 980 330 230 250 U-MOSIII SSM6P25TU –20 ±12 –0.5 — — 430 260 218 U-MOSIII SSM6P40TU –30 ±20 –1.4 — — — 403 120 U-MOSIII 20 ±10 1.6 247 190 139 119 260 U-MOSIII –20 ±8 –1.5 — 430 294 213 250 U-MOSIII 20 ±12 0.8 — 235 178 143 268 U-MOSIII –20 ±8 –0.8 — 460 306 234 250 U-MOSIII 2.1 SSM6L13TU 0.7 –0.72 SSM6N29TU SSM6L10TU 2.0 ±8 SSM6N39TU SSM6L39TU UF6 –20 N-ch + P-ch SSM6L11TU SSM6L12TU SSM6L40TU 20 ±12 0.5 — 395 190 145 268 U-MOSIII –20 ±8 –0.5 — 980 330 230 250 U-MOSIII 20 ±12 0.5 — 395 190 145 268 U-MOSIII –20 ±12 –0.5 — — 430 260 218 U-MOSIII 30 ±12 0.5 — — 180 145 245 U-MOSIII –20 ±12 –0.5 — — 430 260 218 U-MOSIII 30 ±20 1.6 — — — 182 180 U-MOSIII –30 ±20 –1.4 — — — 403 120 U-MOSIII –12 ±12 –1.0 — — 240 160 310 U-MOSIII 20 10 0.05 — — 10 Ω — 11 π-MOSVI –20 ±8 –1.8 364 204 136 — 568 U-MOSIV 20 ±10 0.1 15 Ω — 4Ω 3Ω 9.3 π-MOSVI –20 ±8 –1.8 — 335 180 144 335 U-MOSIII 20 ±10 0.1 15 Ω — 4Ω 3Ω 9.3 π-MOSVI Q1 Q2 Q1 Q2 0.45 1.9 0.55 Q1 0.8 1.6 Q1 0.65 Q1 P-ch + N-ch SSM6E02TU SSM6E03TU 0.65 Q2 SSM6E01TU (Load Switch) ✽: Under development Q2 Q1 Q2 * The internal connection diagrams only show the general configurations of the circuits. MOSFET with a Schottky Barrier Diode –12 ±8 U-MOSII 12 SSM5G02TU –12 ±12 –1.0 — — 240 160 310 U-MOSII 12 0.5 0.43 0.5 P-ch+ SSM5G10TU –20 ±8 –1.5 — 430 294 213 250 U-MOSIII 20 0.7 0.39 0.5 SSM5G04TU –12 ±12 –1.0 — — 420 240 170 U-MOSII 12 0.5 0.43 0.5 SSM5G11TU –30 ±20 –1.4 — — — 403 0.7 0.41 0.5 SSM5G01TU –30 ±20 –1.0 — — — 800 0.5 0.45 0.3 SSM5H10TU 20 ±10 1.6 247 190 139 119 120 U-MOSIII-H 30 86 U-MOSII 20 260 U-MOSIII 20 0.7 0.39 0.5 SSM5H12TU 30 ±12 1.9 — 296 177 133 123 U-MOSIII 30 0.7 0.41 0.5 SSM5H05TU 20 ±12 1.5 — — 220 160 125 U-MOSIII 12 0.5 0.43 0.5 SSM5H08TU 20 ±12 1.5 — — 220 160 125 U-MOSIII 20 0.5 0.45 0.3 SSM5H03TU 12 ±12 1.4 — — — 300 125 U-MOSII 12 0.5 0.43 0.5 SSM5H11TU 30 ±20 1.6 — — — 182 180 U-MOSIII 30 0.7 0.41 0.5 SSM5H01TU 30 ±20 1.4 — — — 450 106 U-MOSII 20 0.5 0.45 0.3 SSM5H07TU 20 ±20 1.2 — — — 540 36 π-MOSVII 12 0.5 0.43 0.5 Polarity Part Number VDSS VGSS (V) (V) 2.1 UFV 0.7 N-ch+ SBD Series VR (V) *Internal Connections Land Pattern Example 0.45 1.9 SSM5G09TU SBD VF Max (V) IO @IF (A) (A) 0.5 0.43 0.5 SBD 2.0 Unit: mm MOSFET RDS(ON) Max (mΩ) ID Ciss (A) VGS = VGS = VGS = VGS = (pF) l 1.5 V l l 1.8 V l l 2.5 V l l 4.0 V l 200 130 550 — –1.5 — 0.8 Package 0.45 Polarity VGSS (V) 1.35 Package VDSS (V) 0.65 0.65 * The internal connection diagrams only show the general configurations of the circuits. 30 MOSFET with a Schottky Barrier Diode Unit: mm SBD VF Max (V) IO @IF (A) (A) MOSFET Package Polarity Part Number VDSS VGSS (V) (V) RDS(ON) Max (mΩ) Ciss ID (A) VGS = VGS = VGS = VGS = (pF) l 1.5 V l l 1.8 V l l 2.5 V l l 4.0 V l VR (V) Series *Internal Connections Land Pattern Example 0.95 0.95 2.9 30 ±12 3.0 — 138 94 78 270 U-MOSIII 45 0.1 0.6 0.1 1.0 2.8 N-ch+ SBD SSM5H14F 2.4 SMV 1.1 0.8 0.6 0.8 * The internal connection diagrams only show the general configurations of the circuits. VS-6 Series … [Part Number: TPC6xxx] ■ Features • Zener diode between gate and source for all products • Thin package, with a board mounting height as low as 0.85 mm (max) ■ Product Offerings Part Number Absolute Maximum Ratings VDSS (V) VGSS (V) Circuit Configuration ID (A) RDS(ON) Max (mΩ) 10 V 4.5 V 2.5 V 2.0 V 1.8 V Qg Typ. (nC) Ciss Typ. (pF) Marking Series TPC6004 20 ±12 6 — 24 32 37 — 17 1400 S2C U-MOSIII TPC6011 ✩✽ 30 ±20 6 20 32 — — — 14 640 S2L U-MOSIV TPC6005 30 ±12 6 — 28 35 41 — 19 1420 S2E U-MOSIII TPC6007-H 30 ±20 5 54 79 — — — 2.8 240 S2G U-MOSIII-H N-ch Single TPC6006-H 40 ±20 3.9 75 100 — — — 2.4 251 S2F U-MOSIII-H TPC6103 –12 ±8 –5.5 — 35 55 — 90 20 1520 S3C U-MOSIII TPC6105 –20 ±8 –2.7 — 110 160 — 300 6 470 S3E U-MOSIII TPC6107 –20 ±12 –4.5 — 55 100 180 — 9.8 680 S3G U-MOSIV TPC6111 –20 ±8 –5.5 — 40 57 — 80 10 700 S3L U-MOSV TPC6108 –30 ±20 –4.5 60 100 — — — 13 570 S3H U-MOSIV TPC6109-H –30 ±20 –5 59 83 — — — 7.2 471 S3J U-MOSIII-H P-ch Single ✩: No protection Zener diode between gate and source ✽: Under development VS-8 Series … [Part Number: TPCF8xxx] ■ Features • Ultra-low ON-resistance achieved by employing the U-MOS process • Thin package, with a board mounting height as low as 0.85 mm (max) • 32% reduction in mounting area compared with the VS-6 (TSOP-6) Series, due to the use of a high-density flat package • PD = 2.5 W @ t = 5 s when the device is mounted on a glass epoxy board ■ Product Offerings Part Number Absolute Maximum Ratings VDSS (V) VGSS (V) RDS(ON) Max (mΩ) ID (A) Circuit Configuration 10 V 4.5 V N-ch Single 2.5 V 2.0 V 1.8 V Qg Typ. (nC) Ciss Typ. (pF) Marking Series TPCF8002 ✩ 30 ±20 6 23 31 — — — TBD TBD F2B U-MOSIV TPCF8101 –12 ±8 –6 — 28 40 — 85 18 1600 F3A U-MOSIII TPCF8103 –20 ±8 –2.7 — 110 160 — 300 6 470 F3C U-MOSIII TPCF8102 –20 ±8 –6 — 30 41 — 90 19 1550 F3B U-MOSIII TPCF8104 –30 ±20 –6 28 38 — — — 34 1760 F3D U-MOSIV TPCF8201 20 ±12 3 — 49 66 100 — 7.5 590 F4A U-MOSIII TPCF8301 –20 ±8 –2.7 — 110 160 — 300 6 470 F5A U-MOSIII TPCF8302 –20 ±10 –3 — 59 95 200 — 11 800 F5B U-MOSIV TPCF8303 –20 ±8 –3 — 58 87 — 250 11 860 F5C U-MOSIV TPCF8304 –30 ±20 –3.2 72 105 — — — 14 600 F5D U-MOSIV 30 ±20 4 50 77 — — — 10 470 –30 ±20 –3.2 72 105 — — — 14 600 TPCF8A01 20 ±12 3.0 N-ch + SBD — 49 66 100 — 7.5 590 F7A U-MOSIII TPCF8B01 –20 ±8 –2.7 P-ch + SBD — 110 160 — 300 6 470 F8A U-MOSIII TPCF8402 P-ch Single N-ch Dual P-ch Dual N-ch + P-ch ✩: No protection Zener diode between gate and source 31 F6B U-MOSIII U-MOSIV 4 Low-VDSS MOSFETs (in Small SMD Packages) PS-8 Series … [Part Number: TPCP8xxx] ■ Features • Same mounting area as for the VS-6 (TSOP-6) Series • Using flat leads and the latest U-MOS process (U-MOSIV), the PS-8 Series offers a 70% reduction in RDS(ON) compared with the VS-6 Series. ■ Product Offerings Part Number TPCP8006 ✩ Absolute Maximum Ratings VDSS (V) VGSS (V) TPCP8001-H 20 30 TPCP8004 ✩ 30 TPCP8005-H ✩ TPCP8A05-H ✩ 30 TPCP8003-H ✩ 100 TPCP8101 TPCP8102 ±12 ±20 ±20 13.7 — 22 1480 U-MOSIV — — 11 640 U-MOSIII-H N-ch Single 8.5 14.5 — — — 26 1270 U-MOSIV 12.9 15.7 — — — 20 1433 U-MOSV-H 17.5 21.9 — — — 16 1300 U-MOSV-H 180 190 — — — 7.5 360 U-MOSIII-H — 30 — 41 90 19 1550 U-MOSIII — 18 — 30 — 33 2560 U-MOSIV –4.8 40 54 — — — 19 800 4.2 50 77 — — — 10 470 U-MOSIII-H U-MOSIII — 40 23 60 — — 39 — — — 28 16 2150 770 — 31 — 60 — 20 1500 U-MOSIII U-MOSIV U-MOSIV –5.6 –7.2 TPCP8103-H –40 ±20 TPCP8201 30 ±20 TPCP8202 TPCP8203 30 40 ±12 5.5 4.7 TPCP8301 –20 TPCP8302 –20 –20 TPCP8402 TPCP8404 ✩ TPCP8403 8 MOSBD N-ch Single –5 P-ch Dual –5 –3.8 0.1 ±8 ±20 –5.5 30 –30 30 ±20 ±20 –3.4 4 –30 ±20 –4 40 ±20 4.7 N-ch/P-ch Load Switch 4.2 –40 ±20 –3.4 –20 ±12 –1.3 TPCP8AA1 20 –32 ±12 1.6 –5.5 50 P-ch Single N-ch Dual TPCP8BA1 TPCP8J01 ±20 — Series — ±12 –12 Ciss Typ. (pF) — –20 TPCP8401 Qg Typ. (nC) 10 –20 20 1.8 V 25 2.2 ±8 ±10 2.5 V — ±20 ±8 TPCP8303 4V 16 11 ±12 4.5 V 9.1 8.3 ±20 ±12 RDS(ON) Max (mΩ) 10 V 7.2 ±20 ±20 30 Circuit Configuration ID (A) N-ch + P-ch N-ch + P-ch N-ch + P-ch MOSBD P-ch + NPN 0.1 U-MOSIV — — 33 45 95 20 1500 — 40 — 57 — 10 640 U-MOSV — — 3Ω 4Ω — — — π-MOSVI U-MOSIII — 38 — 58 103 20 1520 50 77 — — — 10 470 U-MOSIII 72 105 — — — 14 600 U-MOSIV 50 50 100 100 — — — — — — 4.6 13 190 510 U-MOSIV 40 60 — — — 16 770 U-MOSV U-MOSIII 70 105 — — — 15 680 U-MOSIII — — 180 260 — — — U-MOSII — — 105 140 — — — U-MOSII 35 — — — 49 — — — — — 34 — 1760 — U-MOSIV + Bip-Tr 2.5 V Qg Typ. (nC) Ciss Typ. (pF) Series U-MOSIV ✩: No protection Zener diode between gate and source Chip LGA Series ... [Part Number: TPCL4xxx] ■ Features • Chip-scale package for high-density board assembly (58% reduction in mounting area compared with the STP2 package) ■ Product Offerings Part Number Absolute Maximum Ratings VDSS (V) VGSS (V) ID (A) RDS(ON) Max (mΩ) Circuit Configuration 4.5 V N-ch Dual 4V 3.1 V TPCL4201 ✩ 20 ±12 6 31 33 44 52 11.5 720 U-MOSV TPCL4203 ✩✽ 24 ±12 6 (36) (38) (46) (55) (10) (685) U-MOSV TPCL4202 ✩✽ 30 ±12 6 (40) (42) (50) (64) (10) (780) U-MOSV ✩: No protection Zener diode between gate and source ✽: Under development STP2 Series ... [Part Number: TPCT4xxx] ■ Features • The combination of a new chip design using Toshiba U-MOSIV process technology and a new small pump-structured package, offers low ON-resistance. ■ Product Offerings Part Number Absolute Maximum Ratings VSSS (V) VGSS (V) IS (A) TPCT4203 20 ±12 6 TPCT4204 30 ±12 6 RSS(ON) Max (mΩ) Circuit Configuration N-ch Dual 32 2.5 V 4V 4.5 V Qg Typ. (nC) Ciss Typ. (pF) Series 49 32 31 11 790 U-MOSIV 52 39 38 12 780 U-MOSIV TSON Advance Series … [Part Number: TPCC8xxx] ■ Features • The small thermally enhanced package gives a 64% reduction in mounting area compared with SOP-8, yet an equivalent maximum permissible power dissipation. ■ Product Offerings Absolute Maximum Ratings Part Number VDSS (V) ID (A) Circuit Configuration 10 V 4.5 V 4V 2.5 V Qg Typ. (nC) RDS(ON) Max (mΩ) Ciss Typ. (pF) Series U-MOSIV TPCC8007 ✩✽ 20 VGSS (V) ±12 27 — (4.6) — (8.7) TBD TBD TPCC8008 ✩ 30 ±25 25 6.8 12.8 — — 30 1600 U-MOSIV TPCC8003-H ✩ 30 ±20 13 16.9 19.3 — — 8.6 990 U-MOSVI-H TPCC8001-H ✩ 30 ±20 22 8.3 10.6 — — 14.3 1900 U-MOSV-H U-MOSV-H, rg=3.2Ω(Typ.) TPCC8002-H ✩ 30 ±20 22 TPCC8A01-H ✩ 30 ±20 21 TPCC8006-H ✩ 30 ±20 22 TPCC8005-H ✩ 30 ±20 26 TPCC8102 ✩ –30 –30 ±20 –15 –18 TPCC8103 ✩ ±20 ✩: No protection Zener diode between gate and source N-ch Single MOSBD N-ch Single P-ch Single 8.3 10.6 — — 14.3 1900 9.9 12.6 — — 10.1 1430 U-MOSV-H 8.0 9.3 — — 15.0 1700 U-MOSVI-H 6.4 7.4 — — 19.0 2200 U-MOSVI-H 18.9 — 33.2 — 26 1200 U-MOSV 12 — 22 — 38 1600 U-MOSV ✽: Under development TSSOP Advance Series … [Part Number: TPCM8xxx] ■ Product Offerings Absolute Maximum Ratings Part Number RDS(ON) Max (mΩ) 4.5 V 4V Qg Typ. (nC) Ciss Typ. (pF) Series 9.5 14 — 19 1130 U-MOSIII-H 12.9 15.7 — 11 1433 U-MOSV-H 11 13.4 — 11 1433 U-MOSV-H 25 7.0 13.5 — 26 1270 U-MOSIV 30 6.2 8.2 — 18 2270 U-MOSV-H MOSBD 12.9 17.2 — 7.4 1300 U-MOSV-H P-ch Single 7.7 — 16 60 2450 U-MOSV Ciss Typ. (pF) Series VDSS (V) VGSS (V) ID (A) TPCM8001-H 30 ±20 20 TPCM8003-H ✩ 30 ±20 21 TPCM8004-H ✩ 30 ±20 24 TPCM8006 30 ±20 TPCM8002-H ✩ 30 ±20 TPCM8A05-H ✩ 30 ±20 20 TPCM8102 –30 ±20 –25 Circuit Configuration N-ch Single 10 V ✩: No protection Zener diode between gate and source SOP-8 Series … [Part Number: TPC8xxx] ■ Features • Low ON-resistance and high-speed-switching series are available. Low ON-resistance series: UMOSIV/V/VI High-speed-switching series: U-MOSIII-H and U-MOSV-H • ON-resistance reduction through the use of an AI strap structure ■ Product Offerings Part Number Absolute Maximum Ratings VDSS (V) VGSS (V) ID (A) Circuit Configuration RDS(ON) Max (mΩ) 10 V 4.5 V 4V 2.5 V Qg Typ. (nC) TPC8021-H 30 ±20 11 17 25 — — 11 640 U-MOSIII-H TPC8025 ✩ 30 ±20 11 9 14.5 — — 26 1270 U-MOSIV TPC8030 ✩ 30 ±25 11 8.5 17 — — 24 1140 U-MOSIV TPC8037-H ✩ 30 ±20 12 11.4 13.9 — — 11 1433 U-MOSV-H 11.4 13.9 — — 11 1433 U-MOSV-H 9.7 11.1 — — 12 1700 U-MOSVI-H U-MOSIV TPC8038-H ✩ 30 ±20 12 TPC8040-H ✩ 30 ±20 13 TPC8041 ✩ 30 ±20 13 7 13.5 — — 27 1270 TPC8026 ✩ 30 ±20 13 6.6 10 — — 42 1800 U-MOSIV TPC8032-H ✩ 30 ±20 15 6.5 8.6 — — 17 2270 U-MOSV-H TPC8039-H ✩ 30 ±20 17 5.7 6.6 — — 18 2600 U-MOSVI-H TPC8033-H ✩ 30 ±20 17 5.3 7.2 — — 22 2900 U-MOSV-H N-ch Single ✩: No protection Zener diode between gate and source 33 4 Low-VDSS MOSFETs (in Small SMD Packages) ■ Product Offerings Part Number TPC8028 ✩ TPC8029 ✩ TPC8036-H ✩ TPC8034-H ✩ TPC8035-H ✩ TPC8042 ✩ TPC8027 ✩ TPC8022-H TPC8052-H ✩ TPC8047-H ✩ TPC8046-H ✩ TPC8045-H ✩ TPC8053-H ✩ TPC8050-H ✩ TPC8049-H ✩ TPC8048-H ✩ TPC8051-H ✩ TPC8012-H TPC8208 TPC8207 TPC8211 TPC8212-H TPC8216-H ✩ TPC8210 TPC8218-H✩ TPC8213-H TPC8214-H TPC8115 TPC8119 ✩ TPC8121 ✩ TPC8111 TPC8113 TPC8123 ✩ TPC8122 ✩ TPC8118 ✩ TPC8114 TPC8117 ✩ TPC8120 ✩ TPC8116-H TPC8110 TPC8405 TPC8406-H TPC8404 TPC8A01 TPC8A05-H ✩ TPC8A06-H ✩ TPC8A03-H ✩ TPC8A04-H ✩ Absolute Maximum Ratings VDSS (V) VGSS (V) ID (A) Circuit Configuration RDS(ON) Max (mΩ) 10 V 4.5 V 4V 2.5 V Qg Typ. (nC) Ciss Typ. (pF) Series 30 ±20 18 4.3 8 — — 45 1800 U-MOSIV 30 ±20 18 3.8 7 — — 49 2200 U-MOSIV U-MOSVI-H 30 ±20 18 4.5 5.1 — — 26 3500 30 ±20 18 3.5 4.5 — — 35 4614 U-MOSV-H 30 ±20 18 3.2 3.6 — — 44 6000 U-MOSVI-H U-MOSIV 30 ±20 18 3.4 6.5 — — 56 2900 30 ±20 18 2.7 5.5 — — 113 4200 U-MOSIV 40 ±20 7.5 27 35 — — 11 650 U-MOSIII-H 40 ±20 12 11.5 13.3 — — 13 1620 U-MOSVI-H 40 ±20 16 7.6 8.8 — — 23 2590 U-MOSVI-H 40 ±20 18 5.7 6.6 — — 31 3545 U-MOSVI-H 40 ±20 18 3.9 4.4 — — 48 5800 U-MOSVI-H 60 ±20 9 22.5 24.2 — — 13 1620 U-MOSVI-H 60 ±20 11 14.5 15.6 — — 21 2590 U-MOSVI-H 60 ±20 13 10.7 11.5 — — 29 3545 U-MOSVI-H 60 ±20 16 6.9 7.4 — — 46 5800 U-MOSVI-H 80 ±20 13 9.7 10.1 — — 43 5800 U-MOSVI-H 200 ±20 1.8 400 — — — 11 440 π-MOSV 20 ±12 5 — — 50 70 9.5 780 U-MOSIII 20 ±12 6 — — 20 30 22 2010 U-MOSIII 30 ±20 5.5 36 44 — — 25 1250 U-MOSIII 30 ±20 6 21 27 — — 16 840 U-MOSIII-H 30 30 ±20 ±20 6.4 8 20 15 23 20 — — — — 7.6 75 900 3530 U-MOSVI-H 60 60 ±20 57 — — — — 5.7 6 U-MOSVI-H 50 64 56 640 ±20 3.8 5 625 U-MOSIII-H 100 ±20 2.2 180 190 — — 4.5 360 U-MOSIII-H –20 ±8 –10 — 10 — 14 115 9130 U-MOSIV –30 ±20 –10 13 — 28 — 40 1560 U-MOSV –30 ±20 –11 12 — 24 — 42 1770 U-MOSV –30 ±20 –11 12 — 18 — 107 5710 U-MOSIV –30 ±20 –11 10 — 18 — 107 4500 U-MOSIV –30 –25/+20 –11 9 12.5 — — 68 2940 U-MOSVI –30 ±20 –12 8 — 16.5 — 62 2450 U-MOSV –30 ±20 –13 7 — 15 — 65 2700 U-MOSV –30 ±20 –18 4.5 — 6.8 — 180 7480 U-MOSIV –30 ±20 –18 3.9 — 7.9 — 130 4600 U-MOSV –30 –25/+20 –18 3.2 4.2 — — 180 7420 U-MOSVI U-MOSIII-H N-ch Single N-ch Dual P-ch Single U-MOSIII –40 ±20 –7.5 30 37 — — 27 1190 –40 ±20 –8 25 — 35 — 48 2180 U-MOSIII 30 ±20 6 26 33 — — 27 1240 U-MOSIII –30 ±20 –4.5 33 42 — — 40 1540 U-MOSIV 40 ±20 6.5 27 35 — — 11 650 –40 ±20 –6.5 30 37 — — 27 1190 U-MOSIII-H U-MOSIII-H 250 ±20 1.1 1.7 — — — 10 267 π-MOSV –250 ±20 –0.9 2.55 — — — 12 381 30 ±20 6 25 30 — — 17 940 π-MOSV U-MOSIII 30 ±20 ±20 8.5/1 30 2295 1300 U-MOSV-H 30 ±20 12/1 30 30 ±20 ±20 17/1 18/1 N-ch/P-ch Dual N-ch/ N-ch + SBD 10/1 MOSBD U-MOSIII 18 21 — — 49 13.3 17.6 — — 7.4 10.1 12.9 — — 9.6 1400 U-MOSV-H 5.6 3.6 7 4.5 — — — — 19 29 2640 4400 U-MOSV-H ✩: No protection Zener diode between gate and source 34 U-MOSV-H SOP Advance Series … [Part Number: TPCA8xxx] ■ Features • Low ON-resistance and high-speed-switching series are available. Low ON-resistance series: UMOSIV/V High-speed-switching series: U-MOSIII-H, U-MOSV-H and U-MOSVI-H • High-current, thin and thermally enhanced package ■ Product Offerings Part Number TPCA8011-H TPCA8040-H ✩ TPCA8030-H ✩ TPCA8031-H ✩ TPCA8018-H ✩ TPCA8039-H ✩ TPCA8024 ✩ TPCA8036-H ✩ TPCA8012-H ✩ TPCA8025 ✩ TPCA8060-H ✩ TPCA8042 ✩ TPCA8019-H ✩ TPCA8026 ✩ TPCA8028-H ✩ TPCA8020-H TPCA8052-H ✩ TPCA8014-H TPCA8027-H TPCA8047-H ✩ TPCA8015-H TPCA8046-H ✩ TPCA8045-H ✩ TPCA8053-H ✩ TPCA8050-H ✩ TPCA8016-H TPCA8049-H ✩ TPCA8048-H ✩ TPCA8051-H ✩ TPCA8006-H TPCA8022-H TPCA8009-H TPCA8010-H TPCA8008-H TPCA8105 TPCA8103 TPCA8106 ✩ TPCA8107-H TPCA8108 TPCA8104 TPCA8A05-H ✩ TPCA8A02-H ✩ TPCA8A08-H ✩ TPCA8A04-H ✽✩ Absolute Maximum Ratings ID (A) VDSS (V) VGSS (V) 40 20 ±12 ±20 30 23 ±20 30 24 ±20 30 24 ±20 30 30 ±20 30 34 ±20 30 35 ±20 30 38 ±20 30 40 ±20 30 40 ±20 30 45 ±20 30 45 ±20 30 45 ±20 30 45 30 50 ±20 ±20 7.5 40 ±20 40 20 ±20 30 40 ±20 40 30 ±20 40 32 ±20 40 35 ±20 40 38 ±20 40 46 ±20 60 15 ±20 60 24 ±20 25 60 ±20 60 28 ±20 60 35 ±20 80 28 ±20 18 100 ±20 22 100 ±20 150 7 ±20 5.5 200 ±20 4 250 ±8 –6 –12 ±20 –40 –30 ±20 –40 –30 –40 –7.5 ±20 ±20 –40 –40 –40 –60 ±20 30 10 ±20 ±20 30 34 ±20 30 38 ±20 30 42 ✩: No protection Zener diode between gate and source Circuit Configuration N-ch Single P-ch Single MOSBD 10 V — 9.4 11.0 11.0 6.2 5.7 4.3 4.2 4.9 3.5 3.4 3.3 3.1 2.2 2.8 27 11.3 9 10 7.3 5.4 5.4 3.6 22.3 14.2 21 10.4 6.6 9.4 67 26 350 450 580 — 4.2 3.7 30 9.5 16 12.9 5.3 4.2 3.2 RDS(ON) Max (mΩ) 4.5 V 4V 2.5 V 7.5 3.5 — 10.8 — — 13.4 — — 13.4 — — 8.2 — — — — 6.6 7.8 — — 4.8 — — 6.8 — — 6.0 — — 3.9 — — 5.7 — — 4.1 — — 4.5 — — 3.2 — — 35 — — — — 13.1 — — 14 — — — 8.5 — — 7.9 — — 6.3 — — 4.1 — — 24 — — 15.3 — — — 26 — — 11.2 — 7.1 — — 9.8 — — — — — — — — — — — — — — — — — 51 33 — — — 6.8 — — 7.8 37 — — — — — — — 24 17.2 — — — — 6.7 5.3 — — 4.1 — — 1.8 V — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — 92 — — — — — — — — — Qg Typ. (nC) Ciss Typ. (pF) Series 32 11.7 83 83 18 19 45 26 22 49 34 56 34 113 46 11 13 22 23 23 37 29 47 13 21 22 29 46 47 12 38 10 10 10 18 184 120 27 100 90 7.4 19 24 30 2900 1700 1433 1433 2270 2600 1800 3500 2900 2200 4600 2900 4614 4200 6000 650 1620 1365 1430 2590 2155 3545 5800 1620 2590 1375 3545 5800 5800 780 2330 600 600 600 1600 7880 4600 1190 4820 4300 1300 2640 3500 4400 U-MOSIII-H U-MOSVI-H U-MOSV-H U-MOSV-H U-MOSV-H U-MOSVI-H U-MOSIV U-MOSVI-H U-MOSV-H U-MOSIV U-MOSVI-H U-MOSIV U-MOSV-H U-MOSIV U-MOSVI-H U-MOSIII-H U-MOSVI-H U-MOSIII-H U-MOSIII-H U-MOSVI-H U-MOSIII-H U-MOSVI-H U-MOSVI-H U-MOSVI-H U-MOSVI-H U-MOSIII-H U-MOSVI-H U-MOSVI-H U-MOSVI-H π-MOSVII U-MOSIII-H π-MOSV MACHII π-MOSV MACHII π-MOSV MACHII U-MOSIV U-MOSIV U-MOSV U-MOSIII-H U-MOSIII U-MOSIII U-MOSV-H U-MOSV-H U-MOSV-H U-MOSV-H Qg Typ. (nC) Ciss Typ. (pF) Series ✽: Under development DPAK Series ... [Part Number: TKxxPxxxM1] ■ Features • High-current, thermally enhanced package ■ Product Offerings Part Number Absolute Maximum Ratings VDSS (V) VGSS (V) ID (A) TK40P03M1✩ 30 30 ±20 ±20 40 TK50P03M1✩ TK40P04M1✩ 40 ±20 40 TK50P04M1✩ 40 ±20 50 50 Circuit Configuration N-ch Single RDS(ON) Max (mΩ) 10 V 4.5 V 10.8 14.4 9.4 1150 U-MOSVI-H 7.5 9.8 13.3 1700 U-MOSVI-H 10.3 13.4 29 1920 U-MOSVI-H 8.7 10.2 38 2600 U-MOSVI-H ✩: No protection Zener diode between gate and source 35 4 Low-VDSS MOSFETs (in Small SMD Packages) 4-7 Standard MOSFET Series (ID < 500 mA) Single MOSFETs Absolute Maximum Ratings Polarity VDSS VGSS (V) (V) N-ch P-ch 20 20 20 20 20 20 20 30 30 30 30 50 60 60 60 60 –20 –20 –20 –20 –30 –30 –30 –50 –60 ±10 ±10 ±10 ±10 10 10 ±12 ±20 ±20 ±20 ±20 ±7 ±20 ±20 ±20 ±20 ±10 ±10 ±8 ±12 ±20 ±20 ±20 –7 ±20 ID (mA) Package S-Mini USM UFM SSM VSEM CST3 (SOT-346) (SOT-323) (SOT-416) (SOT-723) 2925 size, 3-pin 2021 size, 3-pin 2021 size, 3-pin 1616 size, 3-pin 1212 size, 3-pin 1006 size, 3-pin — 180 — — 100 SSM3K16FU — 500 — — 500 — — 100 — — 100 **SSM3K04FU — 400 SSM3K05FU SSM3K15F 100 SSM3K15FU — 100 — 2SK2009 200 — — 400 SSM3K09FU — 100 SSM3K17FU 2SK1062 200 — 200 SSM3K7002F SSM3K7002FU 200 SSM3K7002AF SSM3K7002AFU 200 SSM3K7002BF SSM3K7002BFU –100 — — –100 — SSM3J16FU –330 — — –200 — SSM3J05FU –100 SSM3J15F SSM3J15FU –200 2SJ305 — –200 — SSM3J09FU –50 2SJ343 2SJ344 –200 2SJ168 — — — SSM3K36TU — — — — — — — — — — — — — — — SSM3J36TU — — — — — — SSM3K35FS SSM3K16FS SSM3K36FS SSM3K43FS — **SSM3K04FS — SSM3K15FS SSM3K44FS — — — — — — SSM3K7002BFS SSM3J35FS SSM3J16FS SSM3J36FS — SSM3J15FS — — — — SSM3K35MFV SSM3K16FV SSM3K36MFV — SSM3K03FV **SSM3K04FV — SSM3K15FV SSM3K44MFV — — — — — — — SSM3J35MFV SSM3J16FV SSM3J36MFV — SSM3J15FV — — — — SSM3K35CT SSM3K16CT — — — — — SSM3K15CT — — — — — — — — SSM3J35CT SSM3J16CT — — SSM3J15CT — — — — Vth (V) RDS(ON) Typ. (Max) (Ω) VGS (V) 0.4 to 1.0 0.6 to 1.1 0.35 to 1.0 0.35 to 1.0 0.7 to 1.3 0.7 to 1.3 0.6 to 1.1 0.8 to 1.5 0.8 to 1.5 0.5 to 1.5 1.1 to 1.8 0.9 to 1.5 2.0 to 3.5 1.0 to 2.5 1.0 to 2.5 1.5 to 3.1 –0.4 to –1.0 –0.6 to –1.1 –0.3 to –1.0 –0.6 to –1.1 –1.1 to –1.7 –0.5 to –1.5 –1.1 to –1.8 –0.8 to –2.5 –2.0 to –3.5 5 (20) 5.2(15) 0.95 (1.52) 0.95 (1.52) 4 (12) 4 (12) 0.85 (1.20) 4.0 (7.0) 4.0 (7.0) 1.2 (2.0) 0.8 (1.2) 22 (40) 0.6 (1.0) 2.2 (3.3) 1.8 (3.3) 2.1 (3.3) 11 (44) 18 (45) 2.23 (3.6) 3.2 (4.0) 14 (32) 2.4 (4.0) 3.3 (4.2) 20 (50) 1.3 (2.0) 1.2 1.5 1.5 1.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 2.5 10 4.5 4.5 4.5 –1.2 –1.5 –1.5 –2.5 –2.5 –2.5 –4.0 –4.0 –10 Vth (V) RDS(ON) Typ. (Max) (Ω) VGS (V) **: Built-in 1-MΩ gate-source resistor Dual MOSFETs Absolute Maximum Ratings Polarity VDSS (V) N-ch×2 P-ch×2 N-ch+ P-ch 20 20 20 20 20 20 20 20 30 30 30 50 60 60 60 –20 –20 –20 –20 –30 –30 20 –20 20 –20 20 –20 20 –20 30 –30 VGSS ID (V) (mA) ±10 ±10 ±10 ±10 ±10 10 10 ±12 ±20 ±20 ±20 ±7 ±20 ±20 ±20 ±10 ±10 ±8 ±12 ±20 ±20 ±10 ±10 ±10 ±10 ±10 ±8 ±12 ±12 ±20 ±20 180 100 250 500 500 100 100 400 100 100 400 100 200 200 200 –100 –100 –330 –200 –100 –200 180 –100 100 –100 500 –330 400 –200 400 –200 Package US6 UF6 USV ES6 ESV CST6D (SOT-363) (SOT-353) (SOT-563) (SOT-553) 2021 size, 6-pin 2021 size, 6-pin 2021 size, 5-pin 1616 size, 6-pin 1616 size, 5-pin 1009 size, 6-pin SSM6N35FU SSM6N16FU — — SSM6N43FU — **SSM6N04FU SSM6N05FU SSM6N15FU SSM6N44FU SSM6N09FU SSM6N17FU SSM6N7002FU SSM6N7002AFU SSM6N7002BFU SSM6P35FU SSM6P16FU — SSM6P05FU SSM6P15FU SSM6P09FU — — — SSM6N36TU — — — — — — — — — — — — — SSM6P36TU — — — — SSM5N16FU — — — — — SSM5N05FU SSM5N15FU — — — — — — — SSM5P16FU — SSM5P05FU SSM5P15FU — SSM6N35FE SSM6N16FE — SSM6N36FE — SSM6N03FE — — SSM6N15FE SSM6N44FE — — — — SSM6N7002BFE SSM6P35FE SSM6P16FE SSM6P36FE — SSM6P15FE — — SSM5N16FE — — — SSM5N03FE — — SSM5N15FE — — — — — — — SSM5P16FE — — SSM5P15FE — — — SSM6N37CTD — — — — — — — — — — — — — — — — — — SSM6L35FU — — SSM6L35FE — — — — — SSM6L16FE — — — SSM6L36TU — SSM6L36FE — — SSM6L05FU — — — — — SSM6L09FU — — — — — **: Built-in 1-MΩ gate-source resistor 36 5 (20) 0.4 to 1.0 5.2 (15) 0.6 to 1.1 0.35 to 1.0 3.07 (5.6) 0.35 to 1.0 0.95 (1.52) 0.35 to 1.0 0.95 (1.52) 4 (12) 0.7 to 1.3 4 (12) 0.7 to 1.3 0.6 to 1.1 0.85 (1.2) 0.8 to 1.5 4.0 (7.0) 0.8 to 1.5 4.0 (7.0) 1.1 to 1.8 0.8 (1.2) 22 (40) 0.9 to 1.5 1.0 to 2.5 2.2 (3.3) 1.0 to 2.5 1.8 (3.3) 1.5 to 3.1 2.1 (3.3) –0.4 to –1.0 11 (44) –0.6 to –1.1 18 (45) –0.3 to –1.0 2.23 (3.6) –0.6 to –1.1 3.2 (4.0) –1.1 to –1.7 14 (32) –1.1 to –1.8 3.3 (4.2) 5 (20) 0.4 to 1.0 –0.4 to –1.0 11 (44) 0.6 to 1.1 5.2 (15) –0.6 to –1.1 18 (45) 0.35 to 1.0 0.95 (1.52) –0.3 to –1.0 2.23 (3.6) 0.6 to 1.1 0.85 (1.2) –0.6 to –1.1 3.2 (4.0) 1.1 to 1.8 0.8 (1.2) –1.1 to –1.8 3.3 (4.2) Constituent Devices 1.2 SSM3K35FS×2 1.5 SSM3K16FU×2 — 1.5 SSM3K36FS×2 1.5 SSM3K43FS×2 1.5 SSM3K03FE×2 2.5 SSM3K04FU×2 2.5 SSM3K05FU×2 2.5 SSM3K15FU×2 2.5 SSM3K44FS×2 2.5 SSM3K09FU×2 4.0 SSM3K17FU×2 2.5 4.5 SSM3K7002FU×2 4.5 SSM3K7002AFU×2 4.5 SSM3K7002BFU×2 SSM3J35FS×2 –1.2 SSM3J16FU×2 –1.5 SSM3J36FS×2 –1.5 SSM3J05FU×2 –2.5 SSM3J15FU×2 –2.5 SSM3J09FU×2 –4.0 SSM3K35FS 1.2 +SSM3J35FS –1.2 SSM3K16FS 1.5 +SSM3J16FS –1.5 SSM3K36FS 1.5 +SSM3J36FS –1.5 SSM3K05FU 2.5 +SSM3J05FU –2.5 SSM3K09FU 4.0 +SSM3J09FU –4.0 5 Low-VDSS, High-Qg MOSFETs 5-1 TO-220SM(W) Series The TO-220SM(W) package, which uses Cu connectors and a wide source terminal, realizes low ON-resistance and a high current-carrying capability. ■ Features • Achieves low ON-resistance, low package inductance and low thermal resistance due to the use of Cu connectors. • Achieves a high current-carrying capability due to the use of a wide source terminal (ID (DC) = 150 A max) • AEC-Q101-qualified at a channel temperature (Tch) of 175˚C • Thin package: 3.7-mm (max) thick, much thinner than the previous TO-220SM package with a thickness of 4.7 mm (max) ■ Characteristics of the WARP Series Low ON-resistance Low package inductance Low thermal resistance Cu connectors ■ Comparison of the Source Lead Temperature ■ Package TO-220SM TO-220SM(W) 250 Source Lead Temperature (@180 Seconds) Front View 200 Approx. twofold current drive capability 150 Predecessors 100 50 TO-220SM(W) 0 0 20 40 60 80 100 120 140 160 Drain Current, ID(A)@180 Seconds ■ Product Offerings RDS(ON) Max (mΩ) Absolute Maximum Ratings Qg Typ. (nC) VDSS (V) VGSS (V) ID (A) VGS = 10 V VGS = 6 V Ciss Typ. (pF) TJ120F06J3 –60 ±20 –120 8 — 11500 258 U-MOSIII TK100F04K3 40 ±20 100 3 — 4500 102 U-MOSIV TK100F04K3L 40 ±20 100 3 4.5 4980 105 U-MOSIV TK150F04K3 40 ±20 150 2.1 — 7500 166 U-MOSIV TK150F04K3L 40 ±20 150 2.1 3.2 9400 190 U-MOSIV TK100F06K3 60 ±20 100 5 — 4500 98 U-MOSIV TK130F06K3 60 ±20 130 3.4 — 8400 170 U-MOSIV TK50F15J1 150 ±20 50 30 — 4300 75 U-MOSIII Part Number 37 Series 5 Low-VDSS, High-Qg MOSFETs 5-2 U-MOS (Trench Type) Series Fabricated using a trench structure, the U-MOS Series ultra-high integration density and thus Planar Structure Source Source Trench (U-MOS) Structure Gate Gate Poly Si N N P N P Poly Si N N+ P P N+ N+ N+ P P N N N+ N+ Drain Drain ■ Features • High density through the use of submicron technology • 60% reduction in RDS (ON) by per unit area (as compared with the maximum RDS (ON) of L2-π-MOSV) • Guaranteed avalanche capability and improved di/dt rate ■ Product Offerings Applications motor drive Solenoids Lamp drivers DC-DC converters LCD backlight inverter motor drive Solenoids Lamp drivers DC-DC converters LCD backlight inverter Part Number 2SJ668 2SJ681 2SJ669 TPCA8104 TJ70A06J3 TJ120F06J3 TJ20A10M3 ✩ 2SK3754 2SK3846 2SK3847 TK70J04J3 TK70X04K3 ✩ TK70X04K3Z 2SK3843 TK80X04K3 ✩ TK100F04K3 ✩ TK100F04K3L TK150F04K3 ✩ TK150F04K3L 2SK4017 2SK4033 TK30A06J3A 2SK3662 2SK3844 TK70X06K3 ✩ 2SK3845 2SK3842 2SK4034 2SK3940 TK25A10K3 ✩ TK40X10J1 TK50F15J1 Absolute Maximum Ratings VDSS (V) VGSS (V) –60 ±20 –60 ±20 –60 ±20 ±20 –60 –60 ±20 –60 ±20 –100 ±20 30 ±20 ±20 40 ±20 40 40 ±20 40 ±20 ±20 40 ±20 40 40 ±20 40 ±20 40 ±20 40 ±20 40 ±20 ±20 60 ±20 60 ±20 60 ±20 60 ±20 60 60 ±20 ±20 60 ±20 60 ±20 60 ±20 75 ±20 100 100 ±20 150 ±20 ID (A) –5 –5 –5 –40 –70 –120 –20 5 26 32 70 70 70 75 80 100 100 150 150 5 5 30 35 45 70 70 75 75 70 25 40 50 PD (W) 20 20 1.2 45 54 300 35 25 25 30 150 80 80 125 125 200 200 300 300 20 20 25 35 45 80 125 125 125 150 25 125 300 Package PW-Mold New PW-Mold2 TPS SOP Advance TO-220SIS TO-220SM(W) TO-220SIS TO-220NIS TO-220NIS TO-220SM TO-3P(N) TFP TFP TFP TFP TO-220SM(W) TO-220SM(W) TO-220SM(W) TO-220SM(W) New PW-Mold2 New PW-Mold TO-220SIS TO-220NIS TO-220NIS TFP TO-3P(N) TFP TFP TO-3P(N) TO-220SIS TFP TO-220SM(W) ✩: No protection Zener diode between gate and source 38 RDS(ON) Max (mΩ) 10 V 170 170 170 16 8.0 8.0 90 89 16 16 3.8 5.6 5.6 3.5 3.5 3.0 3.0 2.1 2.1 100 100 26 12.5 5.8 8.0 5.8 5.8 5.8 7.0 40 20 30 6V — — — — — — — — — — — — — — — — 4.5 — 3.2 — — — — — — — — — — — — — 4.5 V — — — — 10 — — 99 28 28 8.3 — — 8.0 — — — — — — — 35 — — — — — 10 — — — — 4V 250 250 250 24 — — — — — — — — — — — — — — — 150 150 — 19 — — — — — — — — — Qg Typ. (nC) 15 15 15 90 246 258 120 2.5 40 40 210 62 62 210 100 102 105 166 190 15 15 36 91 196 62 196 196 196 200 34 59 75 Series U-MOSIII U-MOSVI U-MOSIII U-MOSIV U-MOSIII U-MOSIV U-MOSIII U-MOSIV U-MOSIII U-MOSIII U-MOSIV U-MOSIII 5-3 U-MOS Series for Synchronous Rectification (VDSS = 60 V to 150 V) ■ Features • Low ON-resistance achieved by high density through the use of submicron technology • Guaranteed avalanche capability • High power dissipation achieved by having the series housed in the TO-220(W) package with an exposed heatsink on the bottom of the package ■ Comparisons Between Synchronous Rectification MOSFETs TK80A08K3 TK60A08J1 Symbol Test Conditions Min Typ. Max Min Typ. Max Unit +IGSS VGS condition*, VDS = 0 V — — 1 — — 10 μA -IGSS VGS condition*, VDS = 0 V — — –1 — — –10 μA Drain cut-off current IDSS VDS = 75 V, VGS = 0 V — — 10 — — 10 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 75 — — 75 — — V V (BR) DSX ID = 10 mA, VGS = –20 V 50 — — 60 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 1.1 — 2.3 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 40 A — 3.6 4.5 — 6.2 7.8 mΩ Input capacitance Ciss Characteristic Gate leakage current Reverse transfer capacitance Forward voltage — 8200 — — 5450 — pF Crss VDS = 10 V, VGS = 0 V f = 1 MHz — 770 — — 320 — pF VDSF IDR = 80 A, VGS = 0 V — –0.9 –1.2 — –0.9 –1.2 V *: Test conditions: TK80A08K3: VGS = ± 20 V, TK60A08J1: VGS = ±16 V ■ Efficiency Test Circuit 130-W(19.5-V/6.7-A) Flyback Converter VIN = 100 Vac 90.5 Synchronous Rectifier U-MOSIV TK80A08K3 U-MOSIII-H TK60A08J1 3 paralleled 100-V/30-A Schottky barrier diodes + – + PFC – VIN + – MAIN Efficiency (%) 90.0 VOUT TK60A08J1 vs TK80A08K3 89.5 89.0 88.5 88.0 0 1 2 3 4 Pout (W) 5 6 7 Efficiency approx. 1% higher than Schottky barrier diodes ■ Product Offerings Part Number R DS(ON) (mΩ) @VGS = 10 V Qg (nC) Typ. Qsw (nC) Typ. Absolute Maximum Ratings Package Series VDSS (V) VGSS (V) ID (A) PD (W) Typ. Max TK70D06J1 60 ±20 70 140 5.1 6.4 87 30 TO-220(W) U-MOSIII-H TK70A06J1 60 ±20 70 45 5.1 6.4 87 30 TO-220SIS U-MOSIII-H TK60D08J1 75 ±20 60 140 6.2 7.8 86 27 TO-220(W) U-MOSIII-H TK60A08J1 75 ±20 60 45 6.2 7.8 86 27 TO-220SIS U-MOSIII-H TK40A08K3 75 ±20 40 42 7.0 9.0 80 — TO-220SIS U-MOSIV TK80D08K3 75 ±20 80 100 3.6 4.5 175 80 TO-220(W) U-MOSIV TK80A08K3 75 ±20 80 40 3.6 4.5 175 80 TO-220SIS U-MOSIV TK40A10K3 100 ±20 40 40 11.5 15 85 40 TO-220SIS U-MOSIV TK40D10J1 100 ±20 40 100 11.5 15 76 25 TO-220(W) U-MOSIII-H TK40A10J1 100 ±20 40 40 11.5 15 76 25 TO-220SIS U-MOSIII-H TK40X10J1 100 ±20 40 125 15 20 59 25 TFP U-MOSIII-H TK55D10J1 100 ±20 55 140 8.4 10.5 110 33 TO-220(W) U-MOSIII-H TK55A10J1 TK50X15J1 100 150 ±20 55 50 45 125 8.4 22 10.5 30 110 75 33 33 TO-220SIS TFP U-MOSIII-H ±20 39 VDS = VDSS x 0.8, ID = ID (DC) U-MOSIII-H 6 Mid- and High-VDSS MOSFETs 6-1 π-MOSVII Series (VDSS = 450 V to 650 V) The latest addition to the π-MOS portfolio, the π-MOSVII Series offers reduced capacitances due to optimized chip design and is available with a greatly wider range of electrical characteristics. ■ Features • 40% reduction in Qg from π-MOSVI due to optimized chip design • Available in 50-V steps of VDSS and in finer steps of RDS(ON). • Rated avalanche and reverse recovery current capabilities ■ Performance Comparisons Between π-MOSVII and π-MOSVI Devices (600 V/10 A) Characteristic Gate leakage current Symbol ± IGSS Drain cut-off current IDSS Drain-source breakdown voltage V(BR)DSS Series π-MOSVII Part Number TK10A60D 2SK3569 Ratings 600 V/10 A 600 V/10 A Package TO-220SIS Min Typ. Max Test Conditions π-MOSVI TO-220SIS Min Typ. Max — — ± 10 Unit μA VGS condition*, VDS = 0 V VDS = 600 V, VGS = 0 V — — ±1 — — 100 — — 100 μA ID = +10 mA, VGS = 0 V 600 — — 600 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 — 4.0 2.0 Drain-source ON-resistance Total gate charge RDS(ON) Qg VGS = 10 V, ID = 5 A VDD = 400 V, VGS = 10 V, ID = 10 A — — — 25 0.75 — — — Diode forward voltage VDSF IDR =10 A, VGS = 0 V — — –1.7 — 4.0 V — 42 0.75 — Ω nC — –1.7 V *: Test conditions: TK10A60D: VGS = ± 30 V, 2SK3569: VGS = ± 25 V ■ Efficiency Test Circuit 90% 120-W (20-V/6-A) Flyback Converter VIN = 100 Vac, VGS = +10, −0 V Synchronous Rectifier + PFC – VIN + – MAIN VOUT Efficiency + – Efficiency greater than a π-MOSVI MOSFET 88% Rg = 4.7 Ω 86% Rg = 4.7 Ω 84% Rg = 47 Ω Rg = 47 Ω 82% 80% 2SK3569 vs TK10A60D 2SK3569 TK10A60D 78% 76% 0 20 40 60 80 Pout (W) 100 120 140 ■ Product Offerings Part Number TK13A45D TK4A50D TK5A50D TK6A50D TK7A50D TK8A50DA TK8A50D TK10A50D TK11A50D TK12A50D TK13A50DA TK13A50D TK15J50D TK15A50D TK18A50D TK20J50D TK4A53D TK5A53D TK6A53D TK6P53D TK12A53D TK12X53D TK4A55DA TK4A55D TK5A55D TK6A55DA Absolute Maximum Ratings ID (A) VDSS (V) 450 13 4 5 6 7 7.5 8 10 500 11 12 12.5 13 15 15 18 20 4 5 6 525 6 12 12 3.5 4 550 5 5.5 R DS(ON) (Ω) VGS = 10 V 0.46 2.0 1.5 1.4 1.2 1.0 0.85 0.72 0.6 0.52 0.47 0.4 0.4 0.3 0.27 0.27 1.7 1.5 1.3 1.3 0.58 0.58 2.45 1.9 1.7 1.48 Equivalent π-MOSVI Part 2SK3743 — 2SK3563 — — — 2SK3561 — — 2SK3568 — 2SK4012 2SK4107 2SK3934 — 2SK4108 — 2SK3563 — — — 2SK3398 — — — — Part Number Package TK8A55DA TK9A55DA TK11A55D TK12A55D TK12J55D TK13A55DA TK14A55D TK16A55D ✽ TK16J55D TK2Q60D TK3A60DA TK4A60DA TK4A60DB TK4A60D TK6A60D TK8A60DA TK10A60D TK11A60D TK12A60D TK13A60D TK15A60D TK5A65D TK6A65D TK8A65D TK12A65D ✽ TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-3P(N) TO-220SIS TO-220SIS TO-3P(N) TO-220SIS TO-220SIS TO-220SIS D-PAK TO-220SIS TFP TO-220SIS TO-220SIS TO-220SIS TO-220SIS Absolute Maximum Ratings ID (A) VDSS (V) 7.5 8.5 11 12 550 12 12.5 14 16 16 2 2.5 3.5 3.7 4 6 600 7.5 10 11 12 13 15 5 6 650 8 12 R DS(ON) (Ω) VGS = 10 V 1.07 0.86 0.63 0.57 0.57 0.48 0.37 0.33 0.37 5.0 2.8 2.2 2 1.7 1.25 1 0.75 0.65 0.55 0.43 0.37 1.43 1.11 0.84 0.50 Equivalent π-MOSVI Part Package — — — — — — — — — 2SK4002 — 2SK3567 — — 2SK3562 2SK3667 2SK3569 — — 2SK3797 — — — — — TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-3P(N) TO-220SIS TO-220SIS TO-220SIS TO-3P(N) New PW-Mold 2 TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS ✽: Under development 40 6-2 Super-Junction DTMOS Series (VDSS = 600 V, 650 V) The DTMOS devices employ a new super-junction structure that enables an ultra-low ON-resistance with the maximum VDSS rating of 600 V. The DTMOS Series helps reduce the power consumption and size of electronic equipment. ■ Features • Low ON-resistance TK40J60T: 80 mΩ (max) @VGS = 10 V, ID = 20 A • Low gate charge TK20A60U: Qg = 27 nC typ., 600 V / 20 A • The rugged internal drain-source diode is not damaged at di/dt = 500 A/μs (@VDS = 400 V, 150˚C). ■ Product Offerings Part Number Absolute Maximum Ratings VDSS (V) TK12A60U TK12D60U TK12J60U TK15J60T TK15A60U TK15D60U TK15J60U TK20A60T TK20D60T TK20J60T TK20A60U TK20D60U TK20J60U TK40J60T TK50J60U ✽ TK13A65U ID (A) R DS(ON) Max (Ω) VGS = 10 V Qg Typ. (nC) Ciss Typ. (pF) 12 0.4 14 720 15 0.3 21 1200 15 0.3 17 950 20 0.19 30 1580 20 0.19 27 1470 40 50 13 0.08 0.065 0.38 67 70 17 3900 4300 950 600 650 Package Series TO-220SIS TO-220(W) TO-3P(N) TO-3P(N) TO-220SIS TO-220(W) TO-3P(N) TO-220SIS TO-220(W) TO-3P(N) TO-220SIS TO-220(W) TO-3P(N) TO-3P(N) TO-3P(N) TO-220SIS DTMOSII DTMOSI DTMOSII DTMOSI DTMOSII DTMOSI DTMOSII DTMOSII ✽: Under development ■ Performance Comparisons Between the New DTMOS and Conventional MOSFET (π-MOSVI) Devices (600 V/20 A) Series DTMOSII Part Number TK20J60U 2SK3911 Ratings 600 V/20 A 600 V/20 A ■ Figure-of-Merit (FOM) Comparison Ron x Qg, the product of ON-resistance and total gate charge, is reduced by 62%, compared with the conventional MOSFETs with the same chip size. π-MOSVI *Ron x Qg is a figure-of-merit index for the switching speed of MOSFETs. Typ. — Max ±1 Min — Typ. — Max ± 10 Unit μA 14 — — 100 — — 100 μA 12 ID = 10 mA, VGS = 0 V 600 — — 600 — — V Vth VDS = 10 V, ID = 1 mA 3.0 — 5.0 2.0 — 4.0 V RDS(ON) VGS = 10 V, ID = 10 A — 0.165 0.19 — 0.22 0.32 Ω Symbol ± IGSS Drain cut-off current IDSS VGS condition*, VDS = 0 V VDS = 600 V, VGS = 0 V Drain-source breakdown voltage V(BR)DSS Gate threshold voltage Drain-source ON-resistance Total gate charge Qg Diode forward voltage VDSF Test Conditions VDD = 400 V, VGS = 10 V ID = 20 A IDR = 20 A, VGS = 0 V — 27 — — 60 — nC — — –1.7 — — –1.7 V Ron x Qg (Ω·nC) Min — Characteristic Gate leakage current 15% reduction 10 8 6 4 2 0 *: Test conditions: TK20J60U: VGS = ± 30 V, 2SK3911: VGS = ± 25 V 62% reduction π-MOSVI DTMOSI DTMOSII ■ Performance Characteristics of the New DTMOS Series TK20A60U Electrical Characteristics Qg Avalanche Breakdown Internal Diode Reverse Recovery VDD: 400 V, ID = 20 A, 25˚C VDD = 90 V, L = 1 mH VGS = ±15 V, Rg = 25 Ω, 25˚C VDD = 400 V, di/dt = 500 A/μs IDR = 20 A, VGS = 0 V, 150˚C t: 10 μs/div VGS: 2 V/div Qg: 27nC t: 100 ns/div VGS: 20 V/div Not damaged at 500 A/μs @150°C Qg: 4 nC/div ID: 10 A/div 20 A VDS: 200 V/div IF: 20 A/div VDS:100 V/div VDS: 100 V/div 41 6 Mid- and High-VDSS MOSFETs 6-3 High-speed π-MOS Series (VDSS = 450 V to 600 V) To support the development of high-efficiency equipment, Toshiba has developed two series of high-speed power MOSFETs: a high-speed switching series for AC adapters and switching power supplies; and a high-speed diode series for motor controllers and inverter circuits. • MACH Series: Achieves a higher switching speed than the existing π-MOS Series, which is currently well established in the market. • High-Speed Diode Series: Achieves a higher internal diode speed by using lifetime control. ■ Product Offerings • MACH Series Package RDS(ON) Max (Ω) TO-220NIS TO-220FL/SM TO-220NIS TO-220FL/SM TO-220FL/SM TO-220FL/SM TO-220FL/SM TO-3P(N) TO-3P(N) 0.65 0.65 0.4 0.4 1.25 1 0.75 0.23 0.32 Package RDS(ON) Max (Ω) TO-220SIS TO-220FL/SM TO-220SIS TO-220NIS TO-3P(N) TO-3P(L) TO-3P(N) TO-220SIS TO-220SIS TO-220SIS TO-3P(N) 1.7 1.8 0.97 0.62 0.49 0.11 0.25 1.4 0.86 0.50 0.33 Absolute Maximum Ratings Applications AC adapters Switching power supplies Part Number 2SK3310 2SK3309 2SK3743 2SK3403 2SK3312 2SK3437 2SK3399 2SK3907 2SK3911 VDSS (V) ID (A) PD (W) 450 450 450 450 600 600 600 500 600 10 10 13 13 6 10 10 23 20 40 65 40 100 65 80 100 150 150 VGS (V) 10 10 10 10 10 10 10 10 10 ID (A) 5 5 6 6 3 5 5 11.5 10 VGS (V) 10 10 10 10 10 10 10 10 10 10 10 ID (A) 2.5 2.5 4 6 7 25 11.5 3 5 6.5 10 Qg Typ. (nC) Standard Type 23 23 34 34 25 28 35 60 60 2SK3126 — — — 2SK2777 2SK2996 2SK2866 — — trr Typ. (ns) Standard Type 150 60 185 90 105 105 380 150 170 160 400 2SK3563 2SK2991 2SK3561 2SK2842 2SK2698 2SK3132 2SK3907 2SK3562 2SK3569 2SK3911 2SK3797 • High-Speed Diode Series (HSD Series) Absolute Maximum Ratings Applications Motor control Inverters Switching power supplies Part Number 2SK3868 2SK3417 2SK4042 2SK3313 2SK3314 2SK3131 2SK3936 2SK3947 2SK4015 2SK4016 2SK3906 VDSS (V) ID (A) PD (W) 500 500 500 500 500 500 500 600 600 600 600 5 5 8 12 15 50 23 6 10 13 20 35 50 40 40 150 250 150 40 45 50 150 ■ Characteristics of the MACHII Series ■ Characteristics of the High-Speed Diode Series 40% reduction in Qg losses Faster internal diode 2SK3313 (High Speed) 600-V MACH-II 2SK3911 ID = 10 A/div Qg = 56 nC 0 VDS: 100 V/div VGS: 2 V/div 10 nC/div 200 ns/div 40% Qg reduction Higher Speed Standard Series 2SK2842 (Standard Series) ID = 10 A/div Qg = 92 nC 0 VDS: 100 V/div VGS: 2 V/div 10 nC/div 200 ns/div 42 Series MACH-I MACH-II 6-4 π-MOS Series ■ π-MOSVI Series (VDSS = 450 V to 600 V) Part Number Series 2SK3757 2SK3766 2SK3869 2SK3935 2SK3904 2SK3563 2SK3863 2SK4103 2SK3561 2SK3568 2SK4012 2SK3934 2SK4107 2SK3905 2SK4108 2SK3767 2SK3567 2SK3562 2SK3667 2SK3569 2SK3797 2SK3903 π-MOSVI Absolute Maximum Ratings VDSS (V) ID (A) 2 2 450 10 17 19 5 5 5 8 12 500 13 15 15 17 20 2 3.5 6 600 7.5 10 13 14 R DS(ON) Max (Ω) VGS = 10 V 2.45 2.45 0.68 0.25 0.26 1.5 1.5 1.5 0.85 0.52 0.4 0.3 0.4 0.31 0.27 4.5 2.2 1.25 1.0 0.75 0.43 0.44 Qg Typ. (nC) Ciss Typ. (pF) Equivalent Predecessor Part Package 9 8 28 62 62 16 16 16 28 42 50 62 48 62 70 9 17 28 33 42 62 62 330 270 1050 3100 3100 550 550 550 1050 1500 2400 3100 2450 3100 3400 320 550 1050 1300 1500 3150 3100 2SK3543 2SK3543 2SK3407 — — 2SK2662 — 2SK3863 2SK2543 2SK2842 — — 2SK2698 — 2SK2837 2SK3067 2SK2750 2SK2545 2SK2996 2SK2843 — — TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-3P(N) TO-220SIS DP New Pw-Mold TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-3P(N) TO-3P(N) TO-3P(N) TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-3P(N) R DS(ON) Max (Ω) VGS = 10 V 1.7 1.7 1.7 1.7 6.4 4.3 3.5 2.5 2.5 2.5 2.0 2.0 1.3 1.6 1.3 0.95 Qg Typ. (nC) Ciss Typ. (pF) Equivalent Predecessor Part Package 35 35 35 45 12 17 26 28 25 28 45 45 60 38 60 45 1500 1500 1500 1400 470 700 800 1150 1150 1150 1400 1650 2200 1450 2200 2790 2SK2746 — — — 2SK2718 2SK2700 — 2SK2717 2SK2717 2SK2610 — 2SK2749 — — 2SK2611 — TO-3P(N) TO-220FL/SM TO-3P(N)IS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-220SIS TO-3P(N) TO-220SIS TO-3P(N) TO-220SIS TO-3P(N) TO-3P(N) TO-3P(N) ■ π-MOSIV Series (VDSS = 800 V to 900 V) Series Part Number π-MOSIV 2SK3633 2SK3879 2SK3880 2SK4013 2SK3566 2SK3564 2SK3798 2SK3565 2SK3742 2SK3700 2SK4014 2SK4115 2SK3799 2SK3473 2SK3878 2SK4207 Absolute Maximum Ratings VDSS (V) ID (A) 7 6.5 800 6.5 6 2.5 3 4 5 5 5 900 6 7 8 9 9 13 ■ L2-π-MOSV and VI Series (VDSS = 30 V to 100 V) Part Number VDSS (V) ID (A) 2SJ537 2SJ360 2SJ507 2SJ438 2SJ378 2SJ349 2SJ401 2SJ334 2SJ402 2SJ508 2SJ509 2SJ380 2SJ412 2SJ619 2SJ620 2SJ464 2SK3506 2SK2989 2SK2614 2SK2507 2SK2886 2SK3051 2SK2744 2SK2550 2SK2551 2SK2745 –50 –60 –60 –60 –60 –60 –60 –60 –60 –100 –100 –100 –100 –100 –100 –100 30 50 50 50 50 50 50 50 50 50 –5 –1 –1 –5 –5 –20 –20 –30 –30 –1 –1 –12 –16 –16 –18 –18 45 5 20 25 45 45 45 45 50 50 PD (W) 0.9 0.5 0.9 25 1.2 45 100 45 100 1.5 0.9 35 60 75 25 45 100 0.9 40 30 40 40 125 100 150 150 Package LSTM PW-Mini LSTM TO-220NIS TPS TO-220NIS TO-220FL/SM TO-220NIS TO-220FL/SM PW-Mini LSTM TO-220NIS TO-220FL/SM TFP TFP TO-220NIS TO-3P(N) LSTM DP TO-220NIS TO-220NIS TO-220FL/SM TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(N) RDS(ON) (Ω) Max VGS (V) 0.19 –10 0.73 –10 0.7 –10 0.19 –10 0.19 –10 0.045 –10 0.045 –10 0.038 –10 0.038 –10 1.9 –10 1.9 –10 0.21 –10 0.21 –10 0.21 –10 0.09 –10 0.09 –10 0.02 10 0.15 10 0.046 10 0.046 10 0.02 10 0.03 10 0.02 10 0.030 10 0.011 10 0.0095 10 Typ. 0.16 0.55 0.5 0.16 0.16 0.033 0.033 0.029 0.029 1.34 1.34 0.15 0.15 0.15 0.063 0.064 0.016 0.12 0.032 0.034 0.014 0.024 0.015 0.024 0.0072 0.007 43 ID (A) –2.5 –0.5 –0.5 –2.5 –2.5 –10 –10 –15 –15 –0.5 –0.5 –6 –6 –6 –9 –9 25 2.5 10 12 25 25 25 25 25 25 Typ. 0.27 0.86 0.72 0.24 0.24 0.05 0.05 0.046 0.046 1.68 1.68 0.25 0.25 0.25 0.085 0.085 — 0.24 0.055 0.058 0.027 — — — — 0.011 RDS(ON) (Ω) Max VGS (V) 0.34 –4 1.2 –4 1.0 –4 0.28 –4 0.28 –4 0.09 –4 0.09 –4 0.06 –4 0.06 –4 2.5 –4 2.5 –4 0.32 –4 0.32 –4 0.32 –4 0.12 –4 0.12 –4 — — 0.33 4 0.08 4 0.08 4 0.036 4 — — — — — — — — 0.016 4 ID (A) –1.3 –0.5 –0.5 –2.5 –2.5 –10 –10 –15 –15 –0.5 –0.5 –6 –6 –6 –9 –9 — 1.3 5 6 25 — — — — 25 Qg Typ. (nC) 18 6.5 5.6 22 22 90 90 110 110 6.3 6.3 48 48 48 140 140 39 6.5 25 25 66 36 68 36 130 130 6 Part Number 2SK2615 2SK2961 2SK2229 2SK2782 2SK2232 2SK2311 2SK2385 2SK2233 2SK2266 2SK2376 2SK2398 2SK2173 2SK2445 2SK2267 2SK2313 2SK2962 2SK2963 2SK2200 2SK2201 2SK4018 2SK2399 2SK2400 2SK4019 2SK2391 2SK2314 2SK2789 2SK3387 Mid- and High-VDSS MOSFETs VDSS (V) 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 100 100 100 100 100 100 100 100 100 100 100 150 ID (A) 2 2 5 20 25 25 36 45 45 45 45 50 50 60 60 1 1 3 3 3 5 5 5 20 27 27 18 PD (W) 0.5 0.9 1.2 40 35 40 40 100 65 100 100 125 125 150 150 0.9 0.5 1.3 20 20 20 1.2 20 35 75 60 100 Package PW-Mini LSTM TPS DP TO-220NIS TO-220FL/SM TO-220NIS TO-3P(N) TO-220FL/SM TO-220FL/SM TO-3P(N) TO-3P(N) TO-3P(N) TO-3P(L) TO-3P(N) LSTM PW-Mini TPS New PW-Mold New PW-Mold2 New PW-Mold TPS New PW-Mold2 TO-220NIS TO-220AB TO-220FL/SM TFP RDS(ON) (Ω) Max VGS (V) 0.3 10 0.27 10 0.16 10 0.055 10 0.046 10 0.046 10 10 0.03 0.03 10 0.03 10 0.017 10 0.03 10 0.017 10 0.018 10 0.011 10 0.011 10 0.7 10 0.7 10 0.35 10 0.35 10 0.35 10 0.23 10 0.23 10 0.23 10 0.085 10 0.085 10 0.085 10 0.12 10 Typ. 0.23 0.2 0.12 0.039 0.036 0.036 0.022 0.022 0.022 0.013 0.022 0.013 0.014 0.008 0.008 0.5 0.5 0.28 0.28 0.28 0.17 0.17 0.17 0.068 0.066 0.066 0.08 ID (A) 1 1 2.5 10 12 12 18 25 25 25 25 25 25 30 30 0.5 0.5 2 2 2 2.5 2.5 2.5 10 15 15 9 Typ. 0.33 0.26 0.2 0.06 0.057 0.057 0.04 0.04 0.04 0.019 — 0.019 — 0.012 0.012 0.65 0.65 0.36 0.36 0.35 0.22 0.22 0.22 0.09 0.09 0.09 0.09 RDS(ON) (Ω) Max VGS (V) 0.44 4 0.38 4 0.3 4 0.090 4 0.08 4 0.08 4 0.055 4 0.055 4 0.055 4 0.025 4 — — 0.025 4 — — 0.015 4 0.015 4 0.95 4 0.95 4 0.45 4 0.45 4 0.45 4 0.3 4 0.3 4 0.3 4 0.13 4 0.13 4 0.13 4 0.18 4 ID (A) 1 1 1.3 5 12 12 15 15 15 25 — 25 — 30 30 0.5 0.5 2 2 2 2.5 2.5 2.5 10 15 15 9 Qg Typ. (nC) 6 5.8 12 25 38 38 60 60 60 110 60 110 110 170 170 6.3 6.3 13.5 13.5 13.5 22 22 22 50 50 50 57 ■ π-MOSV Series (VDSS = 150 V to 250 V) Applications Part Number DC-DC converters Monitors Motor controllers 2SJ618 2SJ407 2SJ567 2SJ676 2SJ680 2SJ610 2SJ512 2SJ516 2SK3670 2SK3205 2SK2882 2SK3497 2SK2992 2SK2835 2SK2381 2SK2920 2SK4020 2SK2350 2SK2965 2SK2382 2SK2401 2SK3625 2SK3444 2SK3176 2SK3462 2SK4022 2SK3342 2SK4021 2SK2417 2SK2914 2SK2508 2SK2598 2SK2993 2SK3994 2SK3388 2SK3445 2SK2967 2SK2995 Absolute Maximum Ratings PD VDSS ID (V) (A) (W) 130 –10 –180 30 –5 –200 20 –2.5 –200 1.3 –2.5 –200 20 –2.5 –200 20 –2 –250 30 –5 –250 35 –6.5 –250 0.9 0.67 150 20 5 150 45 18 150 130 10 180 1.5 1 200 1.3 5 200 25 5 200 20 5 200 20 5 200 30 8.5 200 35 11 200 45 15 200 75 15 200 100 25 200 125 25 200 150 30 250 20 250 3 20 250 3 20 250 4.5 20 250 4.5 30 250 7.5 20 250 7.5 45 250 13 60 250 13 100 250 20 250 45 20 250 125 20 250 125 20 250 150 30 250 90 30 Package TO-3P(N) TO-220NIS New PW-Mold TPS New PW-Mold2 PW-Mold TO-220NIS TO-220NIS LSTM PW-Mold TO-220NIS TO-3P(N) PW-Mini TPS TO-220NIS New PW-Mold New PW-Mold2 TO-220NIS TO-220NIS TO-220NIS TO-220FL/SM TO-220FL/SM TFP TO-3P(N) New PW-Mold New PW-Mold2 New PW-Mold New PW-Mold2 TO-220NIS TO-220AB TO-220NIS TO-220FL/SM TO-220FL/SM TO-220NIS TFP TFP TO-3P(N) TO-3P(N)IS 44 RDS(ON) (Ω) Typ. Max 0.37 – 1.0 0.8 2.0 1.6 2.0 1.6 2.0 1.6 2.55 1.85 1.25 1.0 0.8 0.6 1.7 1.0 0.5 0.36 0.12 0.08 0.15 — 3.5 2.2 0.8 0.56 0.8 0.56 0.8 0.56 0.8 0.52 0.4 0.26 0.26 0.15 0.18 0.13 0.18 0.13 0.082 0.065 0.082 0.067 0.052 0.038 1.7 1.2 1.7 1.2 1.0 0.8 1.0 0.8 0.5 0.42 0.5 0.42 0.25 0.18 0.25 0.18 0.105 0.082 0.105 0.090 0.105 0.082 0.105 0.09 0.068 0.048 0.068 0.048 VGS (V) ID (A) Qg Typ. (nC) –10 –10 –10 –10 –10 –10 –10 –10 4 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 –5 –2.5 –1.5 –1.5 –1.5 –1.0 –2.5 –3 0.5 2.5 9 5 0.5 2.5 2.5 2.5 2.5 5 5.5 10 10 12.5 12.5 15 1.5 1.5 2.5 2.5 3.5 3.5 6.5 6.5 10 10 10 10 15 15 18 20 10 10 10 24 22 29 4.6 12 57 — 3 10 10 10 10 17 30 40 40 44 44 125 12 12 10 10 20 20 40 40 100 45 100 45 132 132 ■ π-MOSV Series (VDSS = 400 V to 700 V) Applications Part Number 115-Vac switching power supplies Ballast inverters Motor controllers 2SK3498 2SK2838 2SK2679 2SK2952 2SK2841 2SK2949 2SK3499 2SK3472 2SK3374 2SK4023 2SK3544 2SK2998 2SK3302 2SK3471 2SK2599 2SK3373 2SK2862 2SK2991 2SK3466 2SK2542 2SK2776 2SK3538 2SK2601 2SK3068 2SK3398 2SK2916 2SK2917 2SK3132 2SK3371 2SK4026 2SK2846 2SK2865 2SK4002 2SK4003 2SK3975 2SK3085 2SK3130 2SK2777 2SK2602 2SK3312 2SK3438 2SK2889 2SK2866 2SK2699 2SK2953 2SK3265 2SK3453 Absolute Maximum Ratings VDSS PD ID (V) (A) (W) 400 20 1 400 40 5.5 400 35 5.5 400 40 8.5 400 80 10 400 80 10 400 80 10 450 20 1 450 20 1 450 20 1 450 100 13 500 0.9 0.5 500 1.3 0.5 500 0.5 0.5 500 1.3 2 500 20 2 500 25 3 500 50 5 500 50 5 500 80 8 500 65 8 500 65 8 500 125 10 500 100 12 500 100 12 500 80 14 500 90 18 500 250 50 600 20 1 600 20 1 600 1.3 2 600 20 2 600 20 2 600 20 3 600 20 3 600 75 3.5 600 40 6 600 65 6 600 125 6 600 65 6 600 80 10 600 100 10 600 125 10 600 150 10 600 90 12 700 45 10 700 80 10 Package PW-Mold TO-220FL/SM TO-220NIS TO-220NIS TO-220AB TO-220FL/SM TFP New PW-Mold TPS New PW-Mold2 TFP LSTM TPS PW-Mini TPS New PW-Mold TO-220NIS TO-220FL/SM TO-220FL/SM TO-220AB TO-220FL/SM TFP TO-3P(N) TO-220FL/SM TFP TO-3P(N)IS TO-3P(N)IS TO-3P(L) New PW-Mold New PW-Mold2 TPS New PW-Mold New PW-Mold2 New PW-Mold2 New PW-Mold TO-220AB TO-220NIS TO-220FL/SM TO-3P(N) TO-220FL/SM TFP TO-220FL/SM TO-220AB TO-3P(N) TO-3P(N)IS TO-220NIS TO-3P(N)IS RDS(ON) (Ω) Typ. Max 4.2 5.5 0.84 1.2 0.84 1.2 0.4 0.55 0.4 0.55 0.4 0.55 0.4 0.55 4.0 4.6 3.7 4.6 4.0 4.6 0.29 0.4 10 18 10 18 10 18 2.9 3.2 2.9 3.2 2.9 3.2 1.35 1.5 1.35 1.5 0.75 0.85 0.75 0.85 0.75 0.85 0.56 1.0 0.4 0.52 0.4 0.52 0.35 0.4 0.21 0.27 0.07 0.095 6.4 9.0 6.4 9 4.2 5.0 4.2 5.0 4.2 5 1.7 2.2 1.7 2.2 1.7 2.2 1.26 1.55 0.9 1.25 0.9 1.25 0.95 1.25 0.78 1.0 0.54 0.75 0.54 0.75 0.5 0.65 0.31 0.4 0.72 1.0 0.72 1.0 VGS (V) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 ID (A) 0.5 3 3 5 5 5 5 0.5 5 0.5 6 0.25 0.25 0.25 1 1 1 2.5 2.5 4 4 4 5 6 6 7 10 25 0.5 0.5 1 1 1 1.5 1.5 1.8 3 3 3 3 5 5 5 6 8 5 5 Qg Typ. (nC) 5.7 17 17 34 34 34 34 5 5 5 34 3.8 3.8 3.8 9 9 9 17 17 30 30 30 30 45 45 58 80 280 9 9 9 9 9 20 20 20 30 30 30 22 28 45 45 58 80 53 53 ■ π-MOSΙΙΙ Series (VDSS = 800 V to 1000 V) Typ. Max VGS(V) ID(A) Qg Typ. (nC) 3.0 3.0 1.9 1.3 1.0 1.0 15 8.0 8.0 3.73 3.7 1.05 1.2 1.05 1.4 3.6 3.6 2.2 1.7 1.2 1.2 20 9.0 9.0 4.3 4.3 1.25 1.4 1.25 1.7 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 1.5 15 3.0 3.5 4.0 4.0 0.5 0.5 0.5 1.5 1.5 4.0 4.0 4 8.0 25 25 34 55 68 68 6 15 15 25 25 58 70 70 65 RDS(ON) (Ω) Absolute Maximum Ratings Package Applications 2SK2603 2SK2883 2SK2884 2SK2746 2SK2606 2SK2607 2SK3301 2SK2845 2SK2733 2SK2608 2SK2719 2SK2847 2SK3017 2SK2968 2SK2613 VDSS (V) ID (A) PD (W) 800 800 800 800 800 800 900 900 900 900 900 900 900 900 1000 3 3 5 7 8 9 1 1 1 3 3 8 8.5 10 8 100 75 100 150 85 150 20 40 60 100 125 85 90 150 150 TO-220AB TO-220FL/SM TO-220FL/SM TO-3P(N) TO-3P(N)IS TO-3P(N) PW-Mold DP TO-220AB TO-220AB TO-3P(N) TO-3P(N)IS TO-3P(N)IS TO-3P(N) TO-3P(N) 45 7 MOSFET Part Numbers 7-1 Alphanumeric Index of Part Numbers Part Number Series Package Main Characteristics RDS(ON) ID VDSS Max (V) (A) (Ω) Page Part Number Series Package Main Characteristics RDS(ON) ID VDSS Max (V) (A) (Ω) Page 2SJ168 π-MOSIII S-MINI –60 –0.2 2 36 2SK2162 π-MOSII PW-Mold 180 1 5 – 2SJ200 π-MOSII TO-3P (N) –180 –10 0.83 – 2SK2173 L2-π-MOSV TO-3P (N) 60 50 0.017 44 TPS 2SJ201 π-MOSII TO-3P (L) –200 –12 0.63 – 2SK2200 L2-π-MOSV 100 3 0.35 44 2SJ304 L2-π-MOSIV TO-220NIS –60 –14 0.12 – 2SK2201 L2-π-MOSV New PW-Mold 100 3 0.35 44 2SJ305 π-MOSIII S-MINI –30 –0.2 4 36 2SK2229 L2-π-MOSV TPS 60 5 0.16 44 –60 –14 0.12 – 2SK2232 L2-π-MOSV TO-220NIS 60 25 0.046 44 TO-3P (N) 60 45 0.03 44 2SJ312 L2-π-MOSIV TO-220FL/SM 2SJ313 π-MOSII TO-220NIS –180 –1 5 – 2SK2233 L2-π-MOSV 2SJ334 L2-π-MOSV TO-220NIS –60 –30 0.038 43 2SK2266 L2-π-MOSV TO-220FL/SM 60 45 0.03 44 2SJ338 π-MOSII PW-Mold –180 –1 5 – 2SK2267 L2-π-MOSV TO-3P (L) 60 60 0.011 44 2SJ343 π-MOSIII S-MINI –50 –0.05 50 36 2SK2274 π-MOSII.5 TO-220NIS 700 5 1.7 – 2SJ344 π-MOSIII USM –50 –0.05 50 36 2SK2311 L2-π-MOSV TO-220FL/SM 60 25 0.046 44 2SJ349 L2-π-MOSV TO-220NIS –60 –20 0.045 43 2SK2313 L2-π-MOSV TO-3P (N) 60 60 0.011 44 2SJ360 L -π-MOSV PW-Mini –60 –1 0.73 43 2SK2314 L2-π-MOSV TO-220AB 100 27 0.085 44 2SJ378 L2-π-MOSV TPS –60 –5 0.19 43 2SK2350 π-MOSV TO-220NIS 200 8.5 0.4 44 2SJ380 L2-π-MOSV TO-220NIS –100 –12 0.21 43 2SK2376 60 45 0.017 44 2SJ401 L2-π-MOSV TO-220FL/SM –60 –20 0.045 43 2SK2381 π-MOSV TO-220NIS 200 5 0.8 44 2SJ402 L2-π-MOSV TO-220FL/SM –60 –30 0.038 43 2SK2382 π-MOSV TO-220NIS 200 15 0.18 44 –200 –5 1 44 2SK2385 L2-π-MOSV TO-220NIS 60 36 0.03 44 2SJ407 2 π-MOSV TO-220NIS L2-π-MOSV TO-220FL/SM 2SJ412 L2-π-MOSV TO-220FL/SM –100 –16 0.21 43 2SK2391 L2-π-MOSV TO-220NIS 100 20 0.085 44 2SJ438 L2-π-MOSV TO-220NIS –60 –5 0.19 43 2SK2398 L2-π-MOSV TO-3P (N) 60 45 0.03 44 2SJ440 π-MOSII TO-3P (N)IS –180 –9 0.8 – 2SK2399 L2-π-MOSV New PW-Mold 100 5 0.23 44 2SJ464 L2-π-MOSV TO-220NIS –100 –18 0.09 43 2SK2400 L2-π-MOSV TPS 100 5 0.23 44 2SJ507 L2-π-MOSV LSTM –60 –1 0.7 43 2SK2401 π-MOSV TO-220FL/SM 200 15 0.18 44 2SJ508 L2-π-MOSV PW-Mini –100 –1 1.9 43 2SK2417 π-MOSV TO-220NIS 250 7.5 0.5 44 2SJ509 L2-π-MOSV LSTM –100 –1 1.9 43 2SK2445 L2-π-MOSV TO-3P (N) 60 50 0.018 44 2SJ512 π-MOSV TO-220NIS –250 –5 1.25 44 2SK2467 π-MOSII TO-3P (N)IS 180 9 0.8 – 2SJ516 π-MOSV TO-220NIS –250 –6.5 0.8 44 2SK2507 L2-π-MOSV TO-220NIS 50 25 0.046 43 2SJ537 L2-π-MOSV LSTM –50 –5 0.19 43 2SK2508 π-MOSV TO-220NIS 250 13 0.25 44 2SJ567 π-MOSV New PW-Mold –200 –2.5 2 44 2SK2542 π-MOSV TO-220AB 500 8 0.85 45 2SJ610 π-MOSV PW-Mold –250 –2 2.55 44 2SK2550 L2-π-MOSV TO-3P (N) 50 45 0.03 43 2SJ618 π-MOSV TO-3P (N) –180 –10 0.37 44 2SK2551 L2-π-MOSV TO-3P (N) 50 50 0.011 43 2SJ619 L2-π-MOSV TFP –100 –16 0.21 43 2SK2598 π-MOSV TO-220FL/SM 250 13 0.25 44 2SJ620 L2-π-MOSV TFP –100 –18 0.09 43 2SK2599 π-MOSV TPS 500 2 3.2 45 2SJ668 U-MOSIII New PW-Mold –60 –5 0.17 38 2SK2601 π-MOSV TO-3P (N) 500 10 1 45 2SJ669 U-MOSIII TPS –60 –5 0.17 38 2SK2602 π-MOSV TO-3P (N) 600 6 1.25 45 2SJ676 π-MOSV TPS –200 –2.5 2 44 2SK2603 π-MOSIII TO-220AB 800 3 3.6 45 2SJ680 π-MOSV New PW-Mold2 –200 –2.5 2 44 2SK2606 π-MOSIII TO-3P (N)IS 800 8 1.2 45 2SJ681 U-MOSIII New PW-Mold2 –60 –5 0.17 38 2SK2607 π-MOSIII TO-3P (N) 800 9 1.2 45 2SK1062 π-MOSIII S-MINI 60 0.2 1 36 2SK2608 π-MOSIII TO-220AB 900 3 4.3 45 2SK1119 π-MOSII.5 TO-220AB 1000 4 3.8 – 2SK2613 π-MOSIII TO-3P (N) 1000 8 1.7 45 2SK1359 π-MOSII.5 TO-3P (N) 100 5 3.8 – 2SK2614 L2-π-MOSV DP 50 20 0.046 43 2SK1365 π-MOSII.5 TO-3P (N)IS 1000 7 1.8 – 2SK2615 L2-π-MOSV PW-Mini 60 2 0.3 44 2SK1381 L2-π-MOSIII 2SK1382 L2-π-MOSIII TO-3P (N) 100 50 0.032 – 2SK2679 π-MOSV TO-220NIS 400 5.5 1.2 45 TO-3P (L) 100 60 0.02 – 2SK2699 π-MOSV TO-3P (N) 600 12 0.65 45 2SK1486 π-MOSIII.5 TO-3P (L) 300 32 0.095 – 2SK2719 π-MOSIII TO-3P (N) 900 3 4.3 45 2SK1489 π-MOSIII.5 TO-3P (L) 1000 12 1 – 2SK2733 π-MOSIII TO-220AB 900 1 9 45 2SK1529 π-MOSII TO-3P (N) 180 10 0.83 – 2SK2744 L2-π-MOSV TO-3P (N) 50 45 0.02 43 2SK1530 π-MOSII TO-3P (N) 200 12 0.63 – 2SK2745 L2-π-MOSV TO-3P (N) 50 50 0.0095 43 2SK1544 π-MOSIII.5 TO-3P (L) 500 25 0.2 – 2SK2776 π-MOSV TO-220FL/SM 500 8 0.85 45 2SK1930 π-MOSII.5 TO-220FL/SM 1000 4 3.8 – 2SK2777 π-MOSV TO-220FL/SM 600 6 1.25 45 2SK2009 π-MOSIII S-MINI 30 0.2 2 36 2SK2782 L2-π-MOSV DP 60 20 0.055 44 2SK2013 π-MOSII TO-220NIS 180 1 5 – 2SK2789 L2-π-MOSV TO-220FL/SM 100 27 0.085 44 46 Main Characteristics RDS(ON) ID VDSS Max (V) (A) (Ω) Main Characteristics RDS(ON) ID VDSS Max (V) (A) (Ω) Page Part Number Series Package 200 5 0.8 44 2SK3388 π-MOSV TFP 250 20 0.105 44 400 5.5 1.2 45 2SK3398 π-MOSV TFP 500 12 0.52 45 TO-220AB 400 10 0.55 45 2SK3399 MACH TO-220FL/SM 600 10 0.75 42 π-MOSIII DP 900 1 9 45 2SK3403 MACH TO-220FL/SM 450 13 0.4 42 2SK2846 π-MOSV TPS 600 2 5 45 500 5 1.8 42 2SK2847 π-MOSIII TO-3P (N)IS 900 8 1.4 45 2SK3417 π-MOSV(HSD) TO-220FL/SM 2SK3437 TO-220FL/SM MACH 600 10 1 42 2SK2862 π-MOSV TO-220NIS 500 3 3.2 45 2SK3438 π-MOSV TFP 600 10 1 45 2SK2865 π-MOSV New PW-Mold 600 2 5 45 2SK3444 π-MOSV TFP 200 25 0.082 44 2SK2866 π-MOSV TO-220AB 600 10 0.75 42,45 2SK3445 π-MOSV TFP 250 20 0.105 44 2SK2882 π-MOSV TO-220NIS 150 18 0.12 44 2SK3453 π-MOSIV TO-3P (N)IS 700 10 1 45 2SK2883 π-MOSIII TO-220FL/SM 800 3 3.6 45 2SK3462 π-MOSV New PW-Mold 250 3 1.7 44 2SK2884 π-MOSIII TO-220FL/SM 800 5 2.2 45 2SK3466 π-MOSV TFP 500 5 1.5 45 2SK2886 L2-π-MOSV TO-220NIS 50 45 0.02 43 2SK3471 π-MOSV PW-Mini 500 0.5 18 45 2SK2889 π-MOSV TO-220FL/SM 600 10 0.75 45 2SK3472 π-MOSV PW-Mold 450 1 4.6 45 2SK2914 π-MOSV TO-220AB 250 7.5 0.5 44 2SK3473 π-MOSIV TO-3P (N) 900 9 1.6 43 2SK2916 π-MOSV TO-3P (N)IS 500 14 0.4 45 2SK3497 π-MOSV TO-3P (N) 180 10 0.15 44 2SK2917 π-MOSV TO-3P (N)IS 500 18 0.27 45 2SK3498 π-MOSV PW-Mold 400 1 5.5 45 2SK2920 π-MOSV New PW-Mold 200 5 0.8 44 2SK3499 π-MOSV TFP 400 10 0.55 45 2SK2949 π-MOSV TO-220FL/SM 400 10 0.55 45 2SK3506 π-MOSVI TO-3P (N) 30 45 0.02 43 2SK2952 π-MOSV TO-220NIS 400 8.5 0.55 45 2SK3538 π-MOSV TFP 500 8 0.85 45 2SK2953 π-MOSV TO-3P (N)IS 600 15 0.4 45 2SK3544 π-MOSV TFP 450 13 0.4 45 2SK2961 L2-π-MOSV LSTM 60 2 0.27 44 2SK3561 π-MOSVI TO-220SIS 500 8 0.85 40,42,43 2SK2962 L2-π-MOSV LSTM 100 1 0.7 44 2SK3562 π-MOSVI TO-220SIS 600 6 1.25 40,42,43 2SK2963 L2-π-MOSV PW-Mini 100 1 0.7 44 2SK3563 π-MOSVI TO-220SIS 500 5 1.5 40,42,43 2SK2965 π-MOSV TO-220NIS 200 11 0.26 44 2SK3564 π-MOSIV TO-220SIS 900 3 4.3 43 2SK2967 π-MOSV TO-3P (N) 250 30 0.068 44 2SK3565 π-MOSIV TO-220SIS 900 5 2.5 43 2SK2968 π-MOSIII TO-3P (N) 900 10 1.25 45 2SK3566 π-MOSIV TO-220SIS 900 2.5 6.4 43 2SK2989 L2-π-MOSV LSTM 50 5 0.15 43 2SK3567 π-MOSVI TO-220SIS 600 3.5 2.2 40,43 2SK2991 π-MOSV TO-220FL/SM 500 5 1.5 42,45 2SK3568 π-MOSVI TO-220SIS 500 12 0.52 40,43 2SK2992 π-MOSV PW-Mini 200 1 3.5 44 2SK3569 π-MOSVI TO-220SIS 600 10 0.75 40,42,43 2SK2993 π-MOSV TO-220FL/SM 250 20 0.105 44 2SK3625 π-MOSV TO-220FL/SM 200 25 0.082 44 2SK2995 π-MOSV TO-3P (N)IS 250 30 0.068 44 2SK3633 π-MOSIV TO-3P (N) 800 7 1.7 43 2SK2998 π-MOSV LSTM 500 0.5 18 45 2SK3662 U-MOSIII TO-220NIS 60 35 0.0125 38 2SK3017 π-MOSIII TO-3P (N)IS 900 8.5 1.25 45 2SK3667 π-MOSVI TO-220SIS 600 7.5 1 40,43 L2-π-MOSV TO-220FL/SM 50 45 0.03 43 2SK3669 π-MOSVII New PW-Mold 100 10 0.125 – TO-220FL/SM 500 12 0.52 45 2SK3670 π-MOSV LSTM 150 0.67 1.7 44 43 Part Number Series 2SK2835 π-MOSV TPS 2SK2838 π-MOSV TO-220FL/SM 2SK2841 π-MOSV 2SK2845 2SK3051 Package Page 2SK3068 π-MOSV 2SK3085 π-MOSV TO-220AB 600 3.5 2.2 45 2SK3700 π-MOSIV TO-3P (N) 900 5 2.5 2SK3130 π-MOSV TO-220NIS 600 6 1.55 45 2SK3742 π-MOSIV TO-220SIS 900 5 2.5 43 2SK3131 π-MOSV(HSD) 2SK3132 π-MOSV TO-3P (L) 500 50 0.11 42 2SK3743 MACH TO-220NIS 450 13 0.6 40,42 TO-3P (L) 500 50 0.095 42,45 2SK3754 U-MOSIII TO-220NIS 30 5 0.089 38 2SK3176 π-MOSV TO-3P (N) 200 30 0.052 44 2SK3757 π-MOSVI TO-220SIS 450 2 2.45 43 2SK3205 π-MOSV PW-Mold 150 5 0.5 44 2SK3766 π-MOSVI TO-220SIS 450 2 2.45 43 2SK3265 π-MOSV TO-220NIS 700 10 1 45 2SK3767 π-MOSVI TO-220SIS 600 2 4.5 43 2SK3301 π-MOSIII PW-Mold 900 1 20 45 2SK3797 π-MOSVI TO-220SIS 600 13 0.43 40,42,43 2SK3302 π-MOSV TPS 500 0.5 18 45 2SK3798 π-MOSIV TO-220SIS 900 4 3.5 43 2SK3309 MACH TO-220FL/SM 450 10 0.65 42 2SK3799 π-MOSIV TO-220SIS 900 8 1.3 43 2SK3310 MACH TO-220NIS 450 10 0.65 42 2SK3842 U-MOSIII TFP 60 75 0.0058 38 2SK3312 π-MOSV TO-220FL/SM 600 6 1.25 42,45 2SK3843 U-MOSIII TFP 40 75 0.0035 38 TO-220NIS 500 12 0.62 42 2SK3844 U-MOSIII TO-220NIS 60 45 0.0058 38 TO-3P (N) 500 15 0.49 42 2SK3845 U-MOSIII TO-3P (N) 60 70 0.0058 38 2SK3313 π-MOSV(HSD) 2SK3314 π-MOSV(HSD) 2SK3342 π-MOSV New PW-Mold 250 4.5 1 44 2SK3846 U-MOSIII TO-220NIS 40 26 0.018 38 2SK3371 π-MOSV New PW-Mold 600 1 9 45 2SK3847 U-MOSIII TO-220SM 40 32 0.016 38 2SK3373 π-MOSV New PW-Mold 500 2 3.2 45 2SK3863 π-MOSVI DP 500 5 1.5 43 2SK3374 π-MOSV TPS 450 1 4.6 45 TO-220SIS 500 5 1.7 42 2SK3387 L2-π-MOSV TFP 150 18 0.12 44 2SK3868 π-MOSVI (HSD) 2SK3869 π-MOSVI TO-220SIS 450 10 0.68 43 47 7 Part Number MOSFET Part Numbers Series Package Main Characteristics ID RDS(ON) VDSS Max (V) (A) (Ω) Page Part Number Series Package Main Characteristics ID RDS(ON) VDSS Max (V) (A) (Ω) Page 2SK3878 π-MOSIV TO-3P (N) 900 9 1.3 43 SSM3J129TU U-MOSV UFM –20 –4.6 0.046 28 2SK3879 π-MOSIV TO-220FL/SM 800 6.5 1.7 43 UFM –20 –4.4 0.0258 28 2SK3880 π-MOSIV TO-3P (N)IS 800 6.5 1.7 43 SSM3J130TU U-MOSVI SSM3J132TU U-MOSVI UFM –12 –5 0.0178 28 2SK3903 π-MOSVI TO-3P (N) 600 14 0.44 43 SSM3J13T U-MOSIII TSM –12 –3 0.07 28 2SK3904 π-MOSVI TO-3P (N) 450 19 0.26 43 SSM3J14T U-MOSII TSM –30 –2.7 0.17 28 2SK3905 π-MOSVI TO-3P (N) 500 17 0.31 43 SSM3J15CT π-MOSVI CST3 –30 –0.1 32 36 2SK3906 MACH (HSD) TO-3P (N) 600 20 0.33 42 SSM3J15F π-MOSVI S-MINI –30 –0.1 32 36 2SK3907 MACH TO-3P (N) 500 23 0.23 42 SSM3J15FS π-MOSVI SSM –30 –0.1 32 36 2SK3911 MACH TO-3P (N) 600 20 0.32 41,42 SSM3J15FU πMOSVI USM –30 –0.1 32 36 2SK3934 π-MOSVI TO-220SIS 500 15 0.3 40,43 SSM3J15FV π-MOSVI VESM –30 –0.1 32 36 2SK3935 π-MOSVI TO-220SIS 450 17 0.25 43 SSM3J16CT π-MOSVI CST3 –20 –0.1 45 36 2SK3936 MACH (HSD) TO-3P (N) 500 23 0.25 42 SSM3J16FS π-MOSVI SSM –20 –0.1 45 36 2SK3947 π-MOSVI (HSD) TO-220SIS 600 6 1.4 42 SSM3J16FU π-MOSVI USM –20 –0.1 45 36 2SK3975 π-MOSV New PW-Mold 600 3 2.2 45 SSM3J16FV π-MOSVI VESM –20 –0.1 45 48 2SK3994 π-MOSV TO-220NIS 250 20 0.105 44 SSM3J304T U-MOSIII TSM –20 –2.3 0.127 28 2SK4002 π-MOSV New PW-Mold2 600 2 5 40,45 SSM3J305T U-MOSII TSM –30 –1.7 0.477 28 2SK4003 π-MOSV New PW-Mold2 600 3 2.2 45 SSM3J306T U-MOSII TSM –30 –2.4 0.225 28 2SK4012 π-MOSVI TO-220SIS 500 13 0.4 40,43 SSM3J307T U-MOSV TSM –20 –5.0 0.031 28 2SK4013 π-MOSIV TO-220SIS 800 6 1.7 43 SSM3J312T U-MOSIII TSM –12 –2.7 0.091 28 2SK4014 π-MOSIV TO-220SIS 900 6 2 43 SSM3J313T U-MOSIII TSM –20 –1.6 0.268 28 2SK4015 π-MOSVI (HSD) TO-220SIS 600 10 0.86 42 TSM –30 –3.5 0.1 28 2SK4016 π-MOSVI (HSD) TO-220SIS 600 13 0.5 42 SSM3J314T U-MOSIII-H SSM3J317T U-MOSIII TSM –20 –3.6 0.107 28 2SK4017 U-MOSIII New PW-Mold2 60 5 0.1 38 SSM3J321T U-MOSV TSM –20 –5.2 0.046 28 2SK4018 L2-π-MOSV New PW-Mold2 100 3 0.35 44 SSM3J325F U-MOSVI S-MINI –20 –2.0 0.155 28 2SK4019 L2-π-MOSV New PW-Mold2 100 5 0.23 44 SSM3J326T U-MOSVI TSM –30 –5.6 0.0457 28 2SK4020 π-MOSV New PW-Mold2 200 5 0.8 44 SSM3J327F U-MOSVI S-MINI –20 –3.5 0.095 28 2SK4021 π-MOSV New PW-Mold2 250 4.5 1 44 SSM3J35CT π-MOSVI CST3 –20 –0.1 44 36 2SK4022 π-MOSV New PW-Mold2 250 3 1.7 44 SSM3J35FS π-MOSVI SSM –20 –0.1 44 36 2SK4023 π-MOSV New PW-Mold2 450 1 4.6 45 SSM3J35MFV π-MOSVI VESM –20 –0.1 44 36 2SK4026 π-MOSV New PW-Mold2 600 1 9 45 SSM3J36FS U-MOSIII SSM –20 –0.33 3.6 36 2SK4033 U-MOSIII New PW-Mold 60 5 0.1 38 VESM –20 –0.33 3.6 36 2SK4034 U-MOSIII TFP 60 75 0.0058 38 SSM3J36MFV U-MOSIII SSM3J36TU U-MOSIII UFM –20 –0.33 3.6 36 2SK4042 π-MOSVI (HSD) TO-220SIS 500 8 0.97 42 SSM3J46CTB U-MOSVI CST3B –20 –2 0.103 28 2SK4103 π-MOSVI New PW-Mold 500 5 1.5 43 SSM3K01T π-MOSVI TSM 30 3.2 0.12 29 2SK4107 π-MOSVI TO-3P (N) 500 15 0.4 40,43 SSM3K02T π-MOSVI TSM 30 2.5 0.2 29 2SK4108 π-MOSVI TO-3P (N) 500 20 0.27 40,43 SSM3K03FV π-MOSVI VESM 20 0.1 12 36 2SK4115 π-MOSIV TO-3P (N) 900 7 2 43 SSM3K04FS π-MOSVI SSM 20 0.1 12 36 2SK4207 π-MOSIV TO-3P (N) 900 13 0.95 43 SSM3K04FU π-MOSVI USM 20 0.1 12 36 S3U72 U-MOSV-H SOP Advance 30 TBD TBD 35 SSM3K04FV π-MOSVI VESM 20 0.1 12 36 S3W16 U-MOSIV-H SOP Advance 30 (40) (0.0035) – SSM3K05FU π-MOSVI USM 20 0.4 1.2 36 SSM3J01T π-MOSVI TSM –30 –1.7 0.4 28 SSM3K09FU π-MOSVI USM 30 0.4 1.2 36 SSM3J02T π-MOSVI TSM –30 –1.5 0.5 28 SSM3K101TU U-MOSIII UFM 20 2.2 0.103 29 SSM3J05FU π-MOSVI USM –20 –0.2 4 36 SSM3K102TU U-MOSIII UFM 20 2.6 0.071 29 SSM3J09FU π-MOSVI USM –30 –0.2 4.2 36 SSM3K104TU U-MOSIII UFM 20 3 0.056 29 SSM3J108TU U-MOSIII UFM –20 –1.8 0.158 28 SSM3K105TU π-MOSVI UFM 30 2.1 0.2 29 SSM3J109TU U-MOSII UFM –20 –2 0.13 28 SSM3K106TU π-MOSVII UFM 20 1.2 0.53 29 SSM3J110TU U-MOSIII UFM –12 –2.3 0.094 28 SSM3K107TU π-MOSVI UFM 20 1.5 0.41 29 SSM3J111TU U-MOSIII UFM –20 –1 0.48 28 SSM3K116TU U-MOSIII UFM 30 2.2 0.1 29 SSM3J112TU U-MOSII UFM –30 –1.1 0.79 28 SSM3K119TU U-MOSIII UFM 30 2.5 0.074 29 SSM3J113TU U-MOSIII UFM –20 –1.7 0.169 28 SSM3K121TU U-MOSIII UFM 20 3.2 0.048 29 SSM3J114TU U-MOSIV SSM3J115TU U-MOSIV UFM –20 –1.8 0.149 28 SSM3K122TU U-MOSIII UFM 20 2 0.123 29 UFM –20 –2.2 0.098 28 SSM3K123TU U-MOSIII UFM 20 4.2 0.028 29 SSM3J117TU U-MOSII UFM –30 –2 0.225 28 SSM3K124TU π-MOSVII UFM 30 2.4 0.12 29 SSM3J118TU U-MOSII UFM –30 –1.4 0.48 28 SSM3K127TU U-MOSIII UFM 30 2 0.123 29 SSM3J120TU U-MOSIV UFM –20 –4 0.038 28 SSM3K128TU U-MOSIII UFM 30 1.5 0.36 29 48 Part Number Series Package Main Characteristics ID RDS(ON) VDSS Max (V) (A) (Ω) Page Part Number Series Package Main Characteristics ID RDS(ON) VDSS Max (V) (A) (Ω) Page SSM3K12T π-MOSVII TSM 30 3 0.175 29 SSM5N15FE π-MOSVI ES6 30 0.1 7 36 SSM3K131TU U-MOSIV UFM 30 6.0 0.0415 29 SSM5N15FU π-MOSVI US6 30 0.1 7 36 SSM3K14T U-MOSII TSM 30 4 0.067 29 SSM5N16FE π-MOSVI ES6 20 0.1 15 36 SSM3K15CT π-MOSVI CST3 30 0.1 7 36 SSM5N16FU π-MOSVI US6 20 0.1 15 36 SSM3K15F π-MOSVI S-MINI 30 0.1 7 36 SSM5P05FU π-MOSVI US6 –20 –0.2 4 36 SSM3K15FS π-MOSVI SSM 30 0.1 7 36 SSM5P15FE π-MOSVI ES6 –30 –0.1 32 36 SSM3K15FU π-MOSVI USM 30 0.1 7 36 SSM5P15FU π-MOSVI US6 –30 –0.1 32 36 SSM3K15FV π-MOSVI VESM 30 0.1 7 36 SSM5P16FE π-MOSVI ES6 –20 –0.1 45 36 SSM3K16CT π-MOSVI CST3 20 0.1 15 36 SSM5P16FU π-MOSVI US6 –20 –0.1 45 36 SSM3K16FS π-MOSVI SSM 20 0.1 15 36 SSM6E01TU U-MOSIII UF6 –12 –1 0.16 30 SSM3K16FU π-MOSVI USM 20 0.1 15 36 SSM6E02TU U-MOSIV UF6 –20 –1.8 0.136 30 SSM3K16FV π-MOSVI VESM 20 0.1 15 36 SSM6E03TU U-MOSIII UF6 –20 –1.8 0.144 30 SSM3K17FU π-MOSV USM 50 0.1 40 36 SSM6J06FU π-MOSVI US6 –20 –0.65 0.5 28 SSM3K301T U-MOSIII TSM 20 3.5 0.056 29 SSM6J07FU π-MOSVI US6 –30 –0.8 0.8 28 SSM3K303T π-MOSVII TSM 30 2.9 0.12 29 SSM6J08FU U-MOSII US6 –20 –1.3 0.18 28 SSM3K309T U-MOSIII TSM 20 4.7 0.031 29 SSM6J205FE U-MOSIII ES6 –20 –0.8 0.234 28 SSM3K310T U-MOSIII TSM 20 5 0.028 29 SSM6J206FE U-MOSIII ES6 –20 –2 0.13 28 SSM3K315T U-MOSIV TSM 30 6 0.0415 29 SSM6J207FE U-MOSII ES6 –30 –1.3 0.491 28 SSM3K316T U-MOSIII TSM 30 4 0.065 29 SSM6J21TU U-MOSIII UF6 –12 –3 0.05 28 SSM3K318T U-MOSIV TSM 60 2.5 0.145 29 SSM6J212FE U-MOSVI ES6 –20 –3.3 0.0434 28 SSM3K320T U-MOSIV TSM 30 4.2 0.077 29 SSM6J23FE U-MOSIII ES6 –12 –1.2 0.16 28 SSM3K35CT π-MOSVI CST3 20 0.18 20 36 SSM6J25FE U-MOSIII ES6 –20 –0.5 0.26 28 SSM3K35FS π-MOSVI SSM 20 0.18 20 36 SSM6J26FE U-MOSIII ES6 –20 –0.5 0.23 28 SSM3K35MFV π-MOSVI VESM 20 0.18 20 36 SSM6J401TU U-MOSIII UF6 –30 –2.5 0.145 28 SSM3K36FS U-MOSIII SSM 20 0.5 1.52 36 SSM6J402TU U-MOSIII UF6 –30 –2 0.225 28 SSM3K36MFV U-MOSIII VESM 20 0.5 1.52 36 SSM6J409TU U-MOSV UF6 –20 –9.5 0.0221 28 SSM3K36TU U-MOSIII UFM 20 0.5 1.52 36 SSM6J50TU U-MOSIV UF6 –20 –2.5 0.064 28 SSM3K43FS U-MOSIII SSM 20 0.5 1.52 36 SSM6J51TU U-MOSIV UF6 –12 –4 0.054 28 SSM3K44FS π-MOSVI SSM 30 0.1 7 36 SSM6J53FE U-MOSIV ES6 –20 –1.8 0.136 28 SSM3K44MFV π-MOSVI VESM 30 0.1 7 36 SSM6K06FU π-MOSVI US6 20 1.1 0.16 29 SSM3K7002AF π-MOSV S-MINI 60 0.2 3.3 36 SSM6K07FU π-MOSVI US6 30 1.5 0.22 29 SSM3K7002AFU π-MOSV USM 60 0.2 3.3 36 SSM6K08FU U-MOSII US6 20 1.6 0.105 29 SSM3K7002BF U-MOSIV S-MINI 60 0.2 3.3 36 SSM6K18TU U-MOSIII UF6 20 4 0.04 29 SSM3K7002BFS U-MOSIV SSM 60 0.2 3.3 36 SSM6K202FE U-MOSIII ES6 30 2.3 0.085 29 SSM3K7002BFU U-MOSIV USM 60 0.2 3.3 36 SSM6K203FE U-MOSIII ES6 20 2.8 0.061 29 SSM3K7002F π-MOSVI S-MINI 60 0.2 3.3 36 SSM6K204FE U-MOSIII ES6 20 2 0.126 29 SSM3K7002FU π-MOSVI USM 60 0.2 3.3 36 SSM6K208FE U-MOSIII ES6 30 1.9 0.133 29 SSM4K27CT U-MOSIII CST4 20 0.5 0.205 29 SSM6K210FE U-MOSIII ES6 30 1.4 0.371 29 SSM5G01TU U-MOSII UFV –30 –1 0.8 30 SSM6K211FE U-MOSIII ES6 20 3.2 0.047 29 SSM5G02TU U-MOSII UFV –12 –1 0.16 30 SSM6K22FE U-MOSIII ES6 20 1.4 0.17 29 SSM5G04TU U-MOSII UFV –12 –1 0.24 30 SSM6K24FE U-MOSIII ES6 30 0.5 0.145 29 SSM5G09TU U-MOSII UFV –12 –1.5 0.13 30 SSM6K25FE U-MOSIII ES6 20 0.5 0.145 29 SSM5G10TU U-MOSIII UFV –20 –1.5 0.213 30 SSM6K30FE π-MOSVII ES6 20 1.2 0.42 29 UFV –30 –1.4 0.403 30 SSM6K31FE π-MOSVII ES6 20 1.2 0.54 29 SSM5G11TU U-MOSIII-H SSM5H01TU U-MOSII UFV 30 1.4 0.45 30 SSM6K32TU π-MOSV UF6 60 2 0.44 29 SSM5H03TU U-MOSII UFV 12 1.4 0.3 30 SSM6K34TU U-MOSIII UF6 30 3 0.077 29 SSM5H05TU U-MOSIII UFV 20 1.5 0.16 30 UF6 20 4.2 0.028 29 SSM5H07TU π-MOSVII UFV 20 1.2 0.54 30 SSM6K403TU U-MOSIII SSM6K404TU U-MOSIII UF6 20 3 0.055 29 SSM5H08TU U-MOSIII UFV 20 1.5 0.16 30 UF6 20 2 0.126 29 SSM5H10TU U-MOSIII UFV 20 1.6 0.119 30 SSM6K405TU U-MOSIII SSM6K406TU U-MOSIV UF6 30 4.4 0.0385 29 SSM5H11TU U-MOSIII UFV 30 1.6 0.182 30 SSM6K407TU π-MOSV UF6 60 2 0.44 29 SSM5H12TU U-MOSIII UFV 30 1.9 0.133 30 SSM6L05FU π-MOSVI US6 20 0.4 1.2 36 SSM5H14F U-MOSIII SMV 30 3 0.078 31 SSM6L09FU π-MOSVI US6 30 0.4 1.2 36 SSM5N03FE π-MOSVI ES6 20 0.1 12 36 SSM6L10TU U-MOSIII UF6 20 0.5 0.145 30 SSM5N05FU π-MOSVI US6 20 0.4 1.2 36 SSM6L11TU U-MOSIII UF6 20 0.5 0.145 30 49 7 MOSFET Part Numbers Main Characteristics RDS(ON) ID VDSS Max (V) (A) (Ω) Page Main Characteristics RDS(ON) ID VDSS Max (V) (A) (Ω) Page 30 0.5 0.145 30 TK100F04K3 U-MOSIV TO-220SM(W) 20 0.8 0.143 30 TK100F04K3L U-MOSIV TO-220SM(W) 40 100 0.003 37,38 40 100 0.003 ES6 20 0.1 15 36 TK100F06K3 U-MOSIV TO-220SM(W) 37,38 60 100 0.005 π-MOSVI ES6 20 0.18 20 36 TK10A50D π-MOSVII 37,38 TO-220SIS 500 10 0.72 SSM6L35FU π-MOSVI US6 20 0.18 20 36 TK10A60D 40 π-MOSVII TO-220SIS 600 10 0.75 SSM6L36FE U-MOSIII ES6 20 0.5 1.52 36 40 TK11A50D π-MOSVII TO-220SIS 500 11 0.6 SSM6L36TU U-MOSIII UF6 20 0.5 1.52 40 36 TK11A55D π-MOSVII TO-220SIS 550 11 0.63 SSM6L39TU U-MOSIII UF6 20 1.6 40 0.119 30 TK11A60D π-MOSVII TO-220SIS 600 11 0.65 SSM6L40TU U-MOSIII UF6 30 40 1.6 0.182 30 TK12A50D π-MOSVII TO-220SIS 500 12 0.52 SSM6N03FE π-MOSVI ES6 40 20 0.1 12 36 TK12A53D π-MOSVII TO-220SIS 525 12 0.58 SSM6N04FU π-MOSVI 40 US6 20 0.1 12 36 TK12A55D π-MOSVII TO-220SIS 550 12 0.57 SSM6N05FU 40 π-MOSVI US6 20 0.4 1.2 36 TK12A60D π-MOSVII TO-220SIS 600 12 0.55 40 SSM6N09FU π-MOSVI US6 30 0.4 1.2 36 TK12A60U DTMOSII TO-220SIS 600 12 0.4 41 SSM6N15FE π-MOSVI ES6 30 0.1 7 36 TK12D60U DTMOSII TO-220(W) 600 12 0.4 41 SSM6N15FU π-MOSVI US6 30 0.1 7 36 TK12J55D π-MOSVII TO-3P(N) 550 12 0.57 40 SSM6N16FE π-MOSVI ES6 20 0.1 15 36 TK12J60U DTMOSII TO-3P(N) 600 12 0.4 41 SSM6N16FU π-MOSVI US6 20 0.1 15 36 TK12X53D π-MOSVII TFP 550 12 0.58 40 SSM6N17FU π-MOSV US6 50 0.1 40 36 TK130F06K3 U-MOSIV TO-220SM(W) 60 130 0.0034 37 SSM6N24TU U-MOSIII UF6 30 0.5 0.145 30 TK13A45D π-MOSVII TO-220SIS 450 13 0.46 40 SSM6N25TU U-MOSIII UF6 20 0.5 0.145 30 TK13A50D π-MOSVII TO-220SIS 500 13 0.4 40 SSM6N29TU U-MOSIII UF6 20 0.8 0.143 30 TK13A50DA π-MOSVII TO-220SIS 500 12.5 0.47 40 SSM6N35FE π-MOSVI ES6 20 0.18 20 36 TK13A55DA π-MOSVII TO-220SIS 550 12.5 0.48 40 SSM6N35FU π-MOSVI US6 20 0.18 20 36 TK13A60D π-MOSVII TO-220SIS 600 13 0.43 40 SSM6N36FE U-MOSIII ES6 20 0.5 1.52 36 TK13A65U DTMOSII TO-220SIS 650 13 0.38 41 SSM6N36TU U-MOSIII UF6 20 0.5 1.52 36 TK14A55D π-MOSVII TO-220SIS 550 14 0.37 40 CST6D 20 0.25 5.6 36 TK150F04K3 U-MOSIV TO-220SM(W) 40 150 0.0021 37 40 150 0.0021 37 Part Number Series Package SSM6L12TU U-MOSIII UF6 SSM6L13TU U-MOSIII UF6 SSM6L16FE π-MOSVI SSM6L35FE SSM6N37CTD U-MOSIII Part Number Series Package SSM6N39TU U-MOSIII UF6 20 1.6 0.119 30 TK150F04K3L U-MOSIV TO-220SM(W) SSM6N40TU U-MOSIII UF6 30 1.6 0.182 30 TK15A50D π-MOSVII TO-220SIS 500 15 0.3 40 SSM6N42FE U-MOSIII ES6 20 0.77 0.26 30 TK15A60D π-MOSVII TO-220SIS 600 15 0.37 40 SSM6N43FU U-MOSIII US6 20 0.5 1.52 36 TK15A60U DTMOSII TO-220SIS 600 15 0.3 41 SSM6N44FE π-MOSVI ES6 30 0.1 7 36 TK15D60U DTMOSII TO-220(W) 600 15 0.3 41 SSM6N44FU π-MOSVI US6 30 0.1 7 36 TK15J50D π-MOSVII TO-3P(N) 500 15 0.4 40 SSM6N7002AFU π-MOSV US6 60 0.2 3.3 36 TK15J60T DTMOSI TO-3P(N) 600 15 0.28 41 SSM6N7002BFE U-MOSIV ES6 60 0.2 3.3 36 TK15J60U DTMOSII TO-3P(N) 600 15 0.3 41 SSM6N7002BFU U-MOSIV US6 60 0.2 3.3 36 TK16J55D π-MOSVII TO-3P(N) 550 16 0.37 40 SSM6N7002FU π-MOSVI US6 60 0.2 3.3 36 TK18A50D π-MOSVII TO-220SIS 500 18 0.27 40 SSM6P05FU π-MOSVI US6 –20 –0.2 4 36 TK20A60T DTMOSI TO-220SIS 600 20 0.19 41 SSM6P09FU π-MOSVI US6 –30 –0.2 4.2 36 TK20A60U DTMOSII TO-220SIS 600 20 0.19 41 SSM6P15FE π-MOSVI ES6 –30 –0.1 32 36 TK20D60T DTMOSI TO-220(W) 600 20 0.19 41 SSM6P15FU π-MOSVI US6 –30 –0.1 32 36 TK20D60U DTMOSII TO-220(W) 600 20 0.19 41 SSM6P16FE π-MOSVI ES6 –20 –0.1 45 36 TK20J50D π-MOSVII TO-3P(N) 500 20 0.27 40 SSM6P16FU π-MOSVI US6 –20 –0.1 45 36 TK20J60T DTMOSI TO-3P(N) 600 20 0.19 41 SSM6P25TU U-MOSIII UF6 –20 –0.5 0.26 30 TK20J60U DTMOSII TO-3P(N) 600 20 0.19 41 SSM6P26TU U-MOSIII UF6 –20 –0.5 0.23 30 TK25A10K3 U-MOSIV TO-220SIS 100 25 0.04 38 SSM6P28TU U-MOSIII UF6 –20 –0.8 0.234 30 TK2Q60D π-MOSVII NewPW-Mold2 600 2 5 40 SSM6P35FE π-MOSVI ES6 –20 –0.1 44 36 TK30A06J3A U-MOSIII TO-220SIS 60 30 0.026 38 SSM6P35FU π-MOSVI US6 –20 –0.1 44 36 TK3A60DA π-MOSVII TO-220SIS 600 2.5 2.8 40 SSM6P36FE U-MOSIII ES6 –20 –0.33 3.6 36 TK40A08K3 U-MOSIV TO-220SIS 75 40 0.009 39 SSM6P36TU U-MOSIII UF6 –20 –0.33 3.6 36 TK40A10J1 U-MOSIII-H TO-220SIS 100 40 0.015 39 SSM6P39TU U-MOSIII UF6 –20 –1.5 0.213 30 TK40A10K3 TO-220SIS 100 40 0.015 39 SSM6P40TU U-MOSIII UF6 –30 –1.4 0.403 30 TK40D10J1 U-MOSIII-H TO-220(W) 100 40 0.015 39 SSM6P41FE U-MOSV ES6 –20 –0.72 0.3 30 TK40J60T TO-3P(N) 600 40 0.08 41 SSM6P54TU U-MOSIV UF6 –20 –1.2 0.228 30 TK40P03M1 U-MOSVI-H DPAK 30 40 0.0108 35 TJ20A10M3 U-MOSVI TO-220SIS –100 –20 0.09 38 TK40P04M1 U-MOSVI-H DPAK 40 40 0.0103 35 TJ70A06J3 U-MOSIII TO-220SIS –60 –70 0.008 38 TK40X10J1 U-MOSIII-H TFP 100 40 0.02 38,39 TJ120F06J3 U-MOSIII TO-220SM(W) –60 –120 0.008 37,38 TO-220SIS 500 4 2 40 TK4A50D 50 U-MOSIV DTMOSI π-MOSVII Main Characteristics RDS(ON) ID VDSS Max (V) (A) (Ω) Page Part Number Series Main Characteristics RDS(ON) ID VDSS Max (V) (A) (Ω) Page 30 18 0.0046 – 30 13 0.009 – SOP-8 30 11 0.017 24,33 Part Number Series Package Package TK4A53D π-MOSVII TO-220SIS 525 4 1.7 40 TPC8018-H U-MOSIII-H SOP-8 TK4A55D π-MOSVII TO-220SIS 550 4 1.9 40 TPC8020-H U-MOSIII-H SOP-8 TK4A55DA π-MOSVII TO-220SIS 550 3.5 2.45 40 TPC8021-H U-MOSIII-H TK4A60D π-MOSVII TO-220SIS 600 4 1.7 40 TPC8022-H U-MOSIII-H SOP-8 40 7.5 0.027 24,34 TK4A60DA π-MOSVII TO-220SIS 600 3.5 2.2 40 TPC8025 U-MOSIV SOP-8 30 11 0.009 27,33 TK4A60DB π-MOSVII TO-220SIS 600 3.7 2 40 TPC8026 U-MOSIV SOP-8 30 13 0.0066 27,33 TK50F15J1 U-MOSIII TO-220SM(W) 150 50 0.03 37,38 TPC8027 U-MOSIV SOP-8 30 18 0.0027 27,34 TK50P03M1 U-MOSVI-H DPAK 30 50 0.0075 35 TPC8028 U-MOSIV SOP-8 30 18 0.0043 27,34 TK50P04M1 U-MOSVI-H DPAK 40 50 0.0087 35 TPC8029 U-MOSIV SOP-8 30 18 0.0038 27,34 TK50X15J1 U-MOSIII-H TFP 150 50 0.03 39 TPC8030 U-MOSIV SOP-8 30 11 0.0095 27,33 TK55A10J1 U-MOSIII-H TO-220SIS 100 55 0.0105 39 TPC8031-H U-MOSV-H SOP-8 30 11 0.0133 24 TK55D10J1 U-MOSIII-H TO-220(W) 100 55 0.0105 39 TPC8032-H U-MOSV-H SOP-8 30 15 0.0065 24,33 TK5A50D π-MOSVII TO-220SIS 500 5 1.5 40 TPC8033-H U-MOSV-H SOP-8 30 17 0.0053 24,33 TK5A53D π-MOSVII TO-220SIS 525 5 1.5 40 TPC8034-H U-MOSV-H SOP-8 30 18 0.0035 24,34 TK5A55D π-MOSVII TO-220SIS 550 5 1.88 40 TPC8035-H U-MOSVI-H SOP-8 30 18 0.0032 24,34 TK5A65D π-MOSVII TO-220SIS 650 5 1.45 40 TPC8036-H U-MOSVI-H SOP-8 30 18 0.0045 24,34 TK60A08J1 U-MOSIII-H TO-220SIS 75 60 0.0078 39 TPC8037-H U-MOSV-H SOP-8 30 12 0.0114 24,33 TK60D08J1 U-MOSIII-H TO-220(W) 75 60 0.0078 39 TPC8038-H U-MOSV-H SOP-8 30 12 0.0114 24,33 TK6A50D π-MOSVII TO-220(W) 500 6 1.4 40 TPC8039-H U-MOSVI-H SOP-8 30 17 0.006 24,33 TK6A53D π-MOSVII TO-220SIS 525 6 1.3 40 TPC8040-H U-MOSVI-H SOP-8 30 13 0.0097 24,33 TK6A55DA π-MOSVII TO-220SIS 550 5.5 1.48 40 TPC8045-H U-MOSVI-H SOP-8 40 18 0.0039 24,34 TK6A60D π-MOSVII TO-220SIS 600 6 1.25 40 TPC8046-H U-MOSVI-H SOP-8 40 18 0.0057 24,34 TK6A65D π-MOSVII TO-220SIS 650 6 1.11 40 TPC8047-H U-MOSVI-H SOP-8 40 16 0.0076 24,34 TK6P53D π-MOSVII DPAK 525 6 1.3 40 TPC8048-H U-MOSVI-H SOP-8 60 16 0.0069 25,34 TK70A06J1 U-MOSIII-H TO-220SIS 60 70 0.0064 39 TPC8049-H U-MOSVI-H SOP-8 60 13 0.0107 25,34 TK70D06J1 U-MOSIII-H TO-220(W) 60 70 0.0064 39 TPC8050-H U-MOSVI-H SOP-8 60 11 0.0145 25,34 TK70J04J3 U-MOSIII TO-3P(N) 40 70 0.0038 38 TPC8051-H U-MOSVI-H SOP-8 80 13 0.0097 25,34 TK70X04K3 U-MOSIV TFP 40 70 0.0056 38 TPC8052-H U-MOSVI-H SOP-8 40 12 0.0115 24,34 TK70X04K3L U-MOSIV TFP 40 70 0.0056 – TPC8053-H U-MOSVI-H SOP-8 60 9 0.0225 25,34 TK70X04K3Z U-MOSIV TFP 40 70 0.0056 38 TPC8107 U-MOSIII SOP-8 –30 –13 0.007 – TK70X06K3 U-MOSIV TFP 60 70 0.008 38 TPC8109 U-MOSIII SOP-8 –30 –10 0.02 – TK7A50D π-MOSVII TO-220SIS 500 7 1.22 40 TPC8110 U-MOSIII SOP-8 –40 –8 0.025 34 TK80A08K3 U-MOSIV TO-220SIS 75 80 0.0045 39 TPC8111 U-MOSIV SOP-8 –30 –11 0.012 34 TK80D08K3 U-MOSIV TO-220(W) 75 80 0.0045 39 TPC8112 U-MOSIII SOP-8 –30 –13 0.006 – 80 0.0035 38 TPC8113 U-MOSIV SOP-8 –30 –11 0.01 27,34 TK80X04K3 U-MOSIV TFP 40 TK8A50D π-MOSVII TO-220SIS 500 8 0.85 40 TPC8114 U-MOSIV SOP-8 –30 –18 0.0045 27,34 TK8A50DA π-MOSVII TO-220SIS 500 7.5 1.0 40 TPC8115 U-MOSIV SOP-8 –20 –10 0.01 27,34 TK8A55DA π-MOSVII TO-220SIS 550 7.5 1.07 40 TPC8116-H U-MOSIII-H SOP-8 –40 –7.5 0.03 25,34 TK8A60DA π-MOSVII TO-220SIS 600 7.5 1 40 TPC8117 U-MOSV SOP-8 –30 –18 0.0039 27,34 TK8A65D π-MOSVII TO-220SIS 650 8 0.84 40 TPC8118 U-MOSV SOP-8 30 13 0.007 27,34 TK9A55DA π-MOSVII TO-220SIS 550 8.5 0.86 40 TPC8120 U-MOSVI SOP-8 –30 –18 0.0032 27,34 TPC6004 U-MOSIII VS-6 20 6 0.024 31 TPC8122 U-MOSV SOP-8 –30 –11 0.008 27,34 TPC6005 U-MOSIII VS-6 30 6 0.028 31 TPC8123 U-MOSVI SOP-8 –30 –11 0.0095 27,34 TPC6006-H U-MOSIII-H VS-6 40 3.9 0.075 24,31 TPC8207 U-MOSIII SOP-8 20 6 0.02 27,34 TPC6007-H U-MOSIII-H VS-6 30 5 0.054 24,31 TPC8208 U-MOSIII SOP-8 20 5 0.05 27,34 TPC6011 U-MOSIV VS-6 30 6 0.020 31 TPC8210 U-MOSIII SOP-8 30 8 0.015 27,34 TPC6103 U-MOSIII VS-6 –12 –5.5 0.035 31 TPC8211 U-MOSIII SOP-8 30 5.5 0.036 27,34 TPC6105 U-MOSIII VS-6 –20 –2.7 0.11 31 TPC8212-H U-MOSIII-H SOP-8 30 6 0.021 34 TPC6107 U-MOSIV VS-6 –20 –4.5 0.055 31 TPC8213-H U-MOSIII-H SOP-8 60 5 0.05 25,34 TPC6108 U-MOSIV VS-6 –30 –4.5 0.06 31 TPC8214-H U-MOSIII-H SOP-8 100 2.2 0.18 25,34 TPC6109-H U-MOSIII-H VS-6 –30 –5 0.059 24,31 TPC8218-H U-MOSVI-H SOP-8 60 3.8 0.057 25,34 TPC6111 U-MOSV VS-6 –20 –5.5 0.04 31 TPC8404 π-MOSV/π-MOSV SOP-8 TPC6201 U-MOSII VS-6 30 2.5 0.095 – TPC8405 U-MOSIV/U-MOSIII SOP-8 TPC8012-H π-MOSV SOP-8 200 1.8 0.4 34 TPC8406-H U-MOSIII-H SOP-8 40 TPC8014 U-MOSIII SOP-8 30 11 0.014 27 TPC8406-H U-MOSIII-H SOP-8 –40 SOP-8 30 15 0.0066 – TPC8A01 SOP-8 30 6 TPC8017-H U-MOSIII-H 51 High-speed U-MOSIII –250/250 1.1/–0.9 1.7/2.55 34 –4.5/6 0.027 27,34 6.5 0.03 25,34 –6.5 0.025 25,34 0.018 34 –30/30 7 Part Number MOSFET Part Numbers Series Package U-MOSIII Main Characteristics RDS(ON) ID VDSS Max (V) (A) (Ω) Page Part Number Series Package Main Characteristics RDS(ON) ID VDSS Max (V) (A) (Ω) Page SOP-8 30 8.5/1 0.0056 34 TPCC8001-H U-MOSV-H TSON Advance 30 22 0.0083 24,33 TPC8A02-H U-MOSIII-H SOP-8 30 16/1 0.0056 – TPCC8002-H U-MOSV-H TSON Advance 30 22 0.0083 24,33 TPC8A03-H U-MOSV-H SOP-8 30 17/1 0.0036 25,34 TPCC8003-H U-MOSIV-H TSON Advance 30 13 0.0169 24,33 TPC8A04-H U-MOSV-H SOP-8 30 18/1 0.0133 25,34 TPCC8005-H U-MOSV-H TSON Advance 30 26 0.0064 24,33 TPC8A05-H U-MOSV-H SOP-8 30 10/1 0.0066 25,34 TPCC8006-H U-MOSIV-H TSON Advance 30 22 0.008 24,33 TPC8A06-H U-MOSV-H SOP-8 30 12 0.0101 25,34 TPCC8007 U-MOSIV TSON Advance 20 27 TPCA8003-H U-MOSIII-H SOP Advance 30 35 0.0046 – TPCC8008 U-MOSIV TSON Advance 30 25 0.0068 27,33 TPCA8004-H U-MOSIII-H SOP Advance 30 40 0.009 – TPCC8102 U-MOSV TSON Advance –30 –15 0.0189 27,33 TPCA8005-H U-MOSIII-H SOP Advance 30 27 0.067 – TPCC8103 U-MOSV TSON Advance –30 –18 0.012 27,33 TPCA8006-H π-MOSVII SOP Advance 100 18 0.58 35 TPCC8A01-H U-MOSV-H TSON Advance 30 21 0.0099 25,33 TPCA8008-H π-MOSV SOP Advance 250 4 0.35 25,35 TPCF8002 U-MOSIV VS-8 30 7 0.023 31 TPCA8009-H π-MOSV SOP Advance 150 7 0.45 25,35 TPCF8101 U-MOSIII VS-8 –12 –6 0.028 31 TPCA8010-H π-MOSV SOP Advance 200 5.5 0.0035 25,35 TPCF8102 U-MOSIII VS-8 –20 –6 0.03 31 TPCA8011-H U-MOSIII-H SOP Advance 20 40 0.0049 24,35 TPCF8103 U-MOSIII VS-8 –20 –2.7 0.11 31 TPCA8012-H U-MOSV-H SOP Advance 30 35 0.0049 24,35 TPCF8104 U-MOSIII VS-8 –30 –6 0.028 31 TPCA8014-H U-MOSIII-H SOP Advance 40 30 0.0054 24,35 TPCF8201 U-MOSIII VS-8 20 3 0.049 31 TPCA8015-H U-MOSIII-H SOP Advance 40 35 0.021 24,35 TPCF8301 U-MOSIII VS-8 –20 –2.7 0.11 31 TPCA8016-H U-MOSIII-H SOP Advance 60 25 0.0062 25,35 TPCF8302 U-MOSIII VS-8 –20 –3 0.059 31 TPCA8018-H U-MOSV-H SOP Advance 30 27 0.0031 24,35 TPCF8303 U-MOSIII VS-8 –20 –3 0.058 31 TPCA8019-H U-MOSV-H SOP Advance 30 40 0.027 24,35 TPCF8304 U-MOSIV VS-8 –30 –3.2 0.072 31 TPCA8020-H U-MOSIII-H SOP Advance 40 7.5 0.027 24,35 TPCF8402 U-MOSIII VS-8 –30/30 TPCA8022-H U-MOSIII-H SOP Advance 100 22 0.026 25,35 TPCF8A01 U-MOSIII VS-8 20 3 0.049 TPCA8023-H U-MOSV-H SOP Advance 30 21 0.0129 24 TPCF8B01 U-MOSIII VS-8 –20 –2.7 0.11 31 TPCA8024 U-MOSIV SOP Advance 30 35 0.0043 27,35 TPCL4201 U-MOSV Chip LGA 20 6 0.031 27,32 TPCA8025 U-MOSIV SOP Advance 30 40 0.0036 27,35 TPCL4202 U-MOSV Chip LGA 30 6 0.04 27,32 TPCA8026 U-MOSIV SOP Advance 30 45 0.0022 27,35 TPCL4203 U-MOSV Chip LGA 24 6 0.036 27,32 TPCA8027-H U-MOSIII SOP Advance 40 30 0.01 24,35 TPCM8001-H U-MOSIII-H TSSOP Advance 30 20 0.0095 33 TPCA8028-H U-MOSVI-H SOP Advance 30 50 0.0028 24,35 TPCM8002-H U-MOSV-H TSSOP Advance 30 30 0.0062 24,33 TPCA8030-H U-MOSV-H SOP Advance 30 24 0.011 24,35 TPCM8003-H U-MOSV-H TSSOP Advance 30 21 0.0129 24,33 TPCA8031-H U-MOSV-H SOP Advance 30 24 0.011 24,35 TPCM8004-H U-MOSV-H TSSOP Advance 30 24 0.011 24,33 TPCA8036-H U-MOSVI-H SOP Advance 30 38 0.0042 24,35 TPCM8A05-H U-MOSV-H TSSOP Advance 30 20 0.0129 25,33 TPCA8039-H U-MOSVI-H SOP Advance 30 34 0.0057 24,35 TPCP8001-H U-MOSIII-H PS-8 30 7.2 0.016 32 TPCA8040-H U-MOSVI-H SOP Advance 30 23 0.0094 24,35 TPCP8003-H U-MOSIII-H PS-8 100 2.2 0.19 25,32 TPCA8045-H U-MOSVI-H SOP Advance 40 46 0.0036 24,35 TPCP8004 PS-8 30 8.3 0.009 27,32 TPCA8046-H U-MOSVI-H SOP Advance 40 38 0.0054 24,35 TPCP8005-H U-MOSV-H PS-8 30 11 0.0133 24,32 TPCA8047-H U-MOSVI-H SOP Advance 40 32 0.0073 24,35 TPCP8006 U-MOSIV PS-8 20 9.1 0.01 27,32 TPCA8048-H U-MOSVI-H SOP Advance 60 35 0.0066 25,35 TPCP8101 U-MOSIII PS-8 –20 –5.6 0.03 32 TPCA8049-H U-MOSVI-H SOP Advance 60 28 0.0104 25,35 TPCP8102 U-MOSIV PS-8 –20 –7.6 0.018 32 TPCA8050-H U-MOSVI-H SOP Advance 60 24 0.0142 25,35 TPCP8103-H U-MOSIII-H PS-8 –40 –4.8 0.04 25,32 TPCA8051-H U-MOSVI-H SOP Advance 80 28 0.0094 25,35 TPCP8201 U-MOSIII PS-8 30 4.2 0.05 32 TPCA8052-H U-MOSVI-H SOP Advance 40 20 0.0113 24,35 TPCP8202 U-MOSIV PS-8 30 5.5 0.023 27,32 TPCA8053-H U-MOSVI-H SOP Advance 60 15 0.0223 25,35 TPCP8203 U-MOSIII PS-8 40 4.7 0.04 32 TPCA8060-H U-MOSVI-H SOP Advance 30 45 0.0034 24,35 TPCP8301 U-MOSIV PS-8 –20 –5 0.031 32 TPCA8101 U-MOSIII SOP Advance –30 –40 0.007 – TPCP8302 U-MOSIV PS-8 –20 –5 0.033 32 TPCA8102 U-MOSIII SOP Advance –30 –40 0.006 – TPCP8303 U-MOSV PS-8 –20 –3.8 0.04 32 TPCA8103 U-MOSIV SOP Advance –30 –40 0.0042 27,35 TPCP8401 U-MOSIII PS-8 –12/20 –5.5/0.1 0.038/3 32 TPCA8104 U-MOSIII SOP Advance –60 –40 0.016 35,38 TPCP8402 U-MOSIII PS-8 –30/30 –3.4/4.2 0.048/0.072 32 TPCA8105 U-MOSIII SOP Advance –12 –6 0.0033 27,35 TPCP8403 U-MOSIV/U-MOSIII PS-8 –40/40 –3.4/4.7 0.170/0.040 32 TPCA8106 U-MOSV SOP Advance –30 –40 0.0037 27,35 TPCP8404 U-MOSV/U-MOSIV PS-8 –30/30 –4/4 0.05/0.05 32 TPCA8107-H U-MOSIII-H SOP Advance –40 –7.5 0.03 25,35 TPCP8A05-H U-MOSV-H PS-8 30 8 0.0175 32 TPCA8108 SOP Advance –40 –40 0.0095 35 TPCP8AA1 U-MOSII PS-8 20 1.6 0.105 32 TPCA8A01-H U-MOSIII-H SOP Advance 30 36 0.0056 – TPCP8BA1 U-MOSII PS-8 –20 –1.3 0.18 32 TPCA8A02-H U-MOSV-H SOP Advance 30 34 0.0053 25,35 TPCP8J01 U-MOSIV PS-8 –32/50 –6/0.1 0.035 32 TPCA8A04-H U-MOSV-H SOP Advance 30 44 0.0032 25,35 TPCT4203 U-MOSIV STP2 20 6 0.031 27,32 TPCA8A05-H U-MOSV-H SOP Advance 30 10 0.0129 25,35 TPCT4204 U-MOSIV STP2 30 6 0.038 27,32 TPCA8A08-H U-MOSV-H SOP Advance 30 38 0.0042 25,35 TPC8A01 U-MOSIII 52 U-MOSIV (0.0046) 27,33 –3.2/4 0.072/0.05 31 31 8 Product Obsolescence 8-1 End-of-Life Products The part numbers in the left-hand column below are end-of-life or obsolete products. When ordering, please choose from the replacement products in the right-hand column. End-of-Life Products Part Number Electrical Characteristics VDSS ID RDS(ON) (V) (A) Max(Ω) Replacement Products Package Part Number Electrical Characteristics VDSS ID RDS(ON) (V) (A) Max(Ω) Package 2SJ148 –60 –0.2 2 TO-92 2SJ168 –60 –0.2 2 S-MINI 2SJ167 –60 –0.2 2 N-MINI 2SJ168 –60 –0.2 2 S-MINI 2SJ200 –16 –2 0.71 PW-Mini TPC6105 –20 –2.7 0.11 VS-6 2SJ342 –50 –0.05 50 N-MINI 2SJ343 –50 –0.05 50 S-MINI 2SJ345 –20 –0.05 40 S-MINI SSM3J16FU –20 –0.1 45 USM 2SJ346 –20 –0.05 40 USM SSM3J16FU –20 –0.1 45 USM 2SJ347 –20 –0.05 40 SSM SSM3J16FS –20 –0.1 45 SSM 2SJ511 –30 –2 0.76 PW-Mini TPC6108 –30 –4.5 0.006 VS-6 2SJ525 –30 –5 0.12 TPS TPCF8104 –30 –6 0.028 VS-8 2SK1061 60 0.2 1 N-MINI SSM3K7002BF 60 0.2 2.1 S-MINI 2SK1120 1000 8 1.8 TO-3P (N) 1000 8 1.7 TO-3P (N) 2SK1825 50 0.05 50 N-MINI SSM3K7002BF 60 0.2 2.1 S-MINI 2SK1826 50 0.05 50 S-MINI SSM3K7002BF 60 0.2 2.1 S-MINI 2SK1827 50 0.05 50 USM SSM3K7002BFU 60 0.2 2.1 USM 2SK1828 20 0.05 40 S-MINI SSM3K15F 30 0.1 7 S-MINI 2SK1829 20 0.05 40 USM SSM3K15FU 30 0.1 7 USM 2SK1830 20 0.05 40 SSM SSM3K15FS 30 0.1 7 SSM 2SK2033 20 0.1 12 S-MINI SSM3K15F 30 0.1 7 S-MINI 2SK2034 20 0.1 12 USM SSM3K15FU 30 0.1 7 USM 2SK2035 20 0.1 12 SSM SSM3K15FS 30 0.1 7 SSM 2SK2036 20 0.1 6 S-MINI SSM3K15F 30 0.1 7 S-MINI 2SK2037 20 0.1 6 USM SSM3K15FU 30 0.1 7 USM 2SK2312 60 45 0.017 TO-220NIS 2SK3844 60 45 0.0058 TO-220NIS 2SK2466 100 30 0.046 TO-220NIS TK40A10K3 100 40 0.015 TO-220SIS 2SK2543 500 8 0.85 TO-220NIS TK8A50D 500 8 0.85 TO-220SIS 2SK2544 600 6 1.25 TO-220AB 2SK3761 600 6 1.25 TO-220AB 2SK2545 600 6 1.25 TO-220NIS TK6A60D 600 6 1.25 TO-220SIS 2SK2549 16 2 0.29 PW-Mini TPC6004 20 6 0.024 VS-6 2SK2604 800 5 2.2 TO-3P (N) 2SK3633 800 7 1.7 TO-3P (N) 2SK2605 800 5 2.2 TO-220NIS 2SK4013 800 6 1.7 TO-220SIS 2SK2610 900 5 2.5 TO-3P (N) 2SK3700 900 5 2.5 TO-3P (N) 2SK2611 900 9 1.4 TO-3P (N) 2SK3878 900 9 1.3 TO-3P (N) 2SK2661 500 5 1.5 TO-220AB 2SK3758 500 5 1.5 TO-220AB 2SK2662 500 5 1.5 TO-220NIS TK5A50D 500 5 1.5 TO-220SIS 2SK2698 500 15 0.4 TO-3P (N) TK15J50D 500 15 0.4 TO-3P (N) 2SK2700 900 3 4.3 TO-220NIS 2SK3564 900 3 4.3 TO-220SIS 2SK2717 900 5 2.5 TO-220NIS 2SK3565 900 5 2.5 TO-220SIS 2SK2718 900 2.5 6.4 TO-220NIS 2SK3566 900 2.5 6.4 TO-220SIS 2SK2746 800 7 1.7 TO-3P (N) 2SK3633 800 7 1.7 TO-3P (N) 2SK2749 900 7 2 TO-3P (N) 2SK4115 900 7 2 TO-3P (N) 2SK2750 600 3.5 2.2 TO-220NIS TK4A60DA 600 3.5 2.2 TO-220SIS 2SK2823 20 0.1 40 S-MINI SSM3K35FS 20 0.18 20 SSM 2SK2824 20 0.1 40 USM SSM3K35FS 20 0.18 20 SSM 2SK2825 20 0.1 40 SSM SSM3K35FS 20 0.18 20 SSM 2SK2837 500 20 0.27 TO-3P (N) TK20J50D 500 20 0.27 TO-3P (N) 2SK2842 500 12 0.52 TO-220NIS TK12A50D 500 12 0.52 TO-220SIS 2SK2843 600 10 0.75 TO-220NIS TK10A60D 600 10 0.75 TO-220SIS 2SK2844 30 35 0.02 TO-220AB TK70D06J1 60 70 0.0064 TO-220 (W) 2SK2915 600 16 0.4 TO-3P (N) 2SK3903 600 14 0.44 TO-3P (N) 2SK2996 600 10 1 TO-220NIS 2SK4112 600 10 1 TO-220HIS 2SK2613 53 8 Part Number 2SK2964 2SK3067 2SK3084 2SK3089 2SK3090 2SK3125 2SK3126 2SK3127 2SK3128 2SK3129 2SK3130 2SK3236 2SK3316 2SK3389 2SK3397 2SK3407 2SK3439 2SK3440 2SK3441 2SK3442 2SK3443 2SK3499 2SK3543 2SK982 HN1J02FU HN1K02FU HN1K03FU HN1K04FU HN1K05FU HN1K06FU HN1L02FU HN1L03FU HN4K03JU SSM3J01F SSM3J02F SSM3J15TE SSM3J16TE SSM3K01F SSM3K02F SSM3K03C SSM3K03FE SSM3K03TE SSM3K04FE SSM3K126TU SSM3K15TE SSM3K16TE SSM3K302T SSM3K311T SSM6G06FE SSM6H06FE TPC6106 TPCT4201 TPCT4202 TPC6201 TPC8301 TPC8303 Product Obsolescence End-of-Life Products Electrical Characteristics ID RDS(ON) VDSS (V) (A) Max(Ω) Package 30 2 0.18 PW-Mini 600 2 5 TO-220NIS 100 30 0.046 TO-220FL/SM 30 40 0.03 TO-220FL/SM 30 45 0.02 TO-220FL/SM 30 70 0.007 TO-3PSM 450 10 0.65 TO-220NIS 30 45 0.012 TO-220FL/SM 30 60 0.012 TO-3P (N) 50 60 0.007 TO-3P (N) 600 6 1.55 TO-220NIS 60 35 0.02 TO-220NIS 500 5 1.8 TO-220NIS 30 75 0.005 TFP 30 75 0.006 TFP 450 10 0.65 TO-220NIS 30 75 0.005 TFP 60 50 0.008 TFP 60 75 0.0058 TFP 100 45 0.02 TFP 150 30 0.055 TFP 400 10 0.55 TFP 450 2 2.45 TO-220NIS 60 0.2 1 TO-92 –20 –0.05 40 US6 20 0.05 40 US6 20 0.1 12 US6 50 0.05 50 US6 20 0.1 40 US6 20 0.1 6 US6 20 0.05 40 US6 50 0.05 50 US6 20 0.1 12 UFV –30 –0.7 0.6 S-MINI –30 –0.6 0.7 S-MINI –30 –0.1 32 TESM –20 –0.1 45 TESM 30 1.3 0.15 S-MINI 30 1 0.25 S-MINI 20 0.1 12 SS-CSP 20 0.1 12 ESM 20 0.1 12 TESM 20 0.1 12 ESM 30 3.9 0.043 UFM 30 0.1 7 TESM 20 0.1 15 TESM 30 3 0.071 TSM 30 4.6 0.043 –20 –0.1 20 Part Number TPC6003 2SK3767 – 2SK3847 2SK3847 2SK3843 2SK3869 2SK3847 2SK3843 2SK3845 2SK3947 2SK3662 2SK3868 2SK3843 2SK3843 2SK3869 2SK3843 2SK3842 2SK4034 TK40D10J1 TK50X15J1 TK10X40D✽ 2SK3757 SSM3K7002BF SSM6P16FU SSM6N16FU SSM6N16FU SSM6K7002BFU SSM6N35FU SSM6N15FU SSM6L35FU Replacement Products Electrical Characteristics VDSS ID RDS(ON) (V) (A) Max(Ω) Package 30 6 0.024 VS-6 600 2 4.5 TO-220SIS – – – – 40 32 0.018 TO-220SM 40 32 0.018 TO-220SM 40 75 0.0035 TFP 450 10 0.68 TO-220SIS 40 32 0.018 TO-220SM 40 75 0.0035 TFP 60 70 0.0058 TO-3P (N) 600 6 1.4 TO-220SIS 60 35 0.0125 TO-220NIS 500 5 1.7 TO-220NIS 40 75 0.008 TFP 40 75 0.0035 TFP 450 10 0.68 TO-220SIS 40 75 0.0035 TFP 60 75 0.0058 TFP 60 75 0.0058 TFP 100 40 0.015 TO-220 (W) 150 50 0.03 TFP 400 10 0.55 TFP 450 2 2.45 TO-220SIS 60 0.2 2.1 S-MINI –20 –0.1 45 US6 20 0.1 15 US6 20 0.1 15 US6 60 0.2 2.1 US6 20 0.18 20 US6 30 0.1 7 US6 20 0.18 20 US6 – – – – – 30 0.1 7 USV –30 –1.7 0.6 TSM –30 –1.6 0.7 TSM –30 –0.1 32 VESM –20 –0.1 45 VESM 30 3.2 0.15 TSM 30 2.5 0.25 TSM 20 0.1 15 CST3 20 0.1 15 SSM 20 0.1 15 VESM 20 0.1 12 SSM 30 6 0.0415 UFM 30 0.1 7 VESM 20 0.1 15 VESM 30 4 0.065 TSM TSM SSM5N15FU SSM3J01T SSM3J02T SSM3J15FV SSM3J16FV SSM3K01T SSM3K02T SSM3K16CT SSM3K16FS SSM3K16FV SSM3K04FS SSM3K131TU SSM3K15FV SSM3K16FV SSM3K316T SSM3K315T 30 6 0.0415 TSM 45 ES6 – – – – – 0.1 15 ES6 – – – – – –40 –3.9 0.08 VS-6 – – – – – 20 6 0.031 STP 20 6 0.031 STP2 30 6 0.038 STP 30 6 0.038 STP2 30 2.5 0.095 VS-6 30 5.5 0.023 PS-8 –30 –3.5 0.12 SOP-8 –30 3.2 0.105 SOP-8 –30 –4.5 0.035 SOP-8 – – – TPCT4203 TPCT4204 TPCP8202 TPCF8304 – – ✽: Under development 54 9 Packaging 9-1 Compact Surface-Mount Packages 100 SOP Advance TSSOP Advance TSON Advance SOP-8 PS-8 10 Drain Current, ID (A) Toshiba offers a broad range of packaging options suitable for various mobile applications, including ultra-small, thin packages; those specifically designed for lithium-ion battery protection circuits; high-current packages with a thermal fin on the bottom. VS-8 VS-6 UF6 UFM Chip LGA TSM STP2 STP TSSOP-8 S-Mini ES6 SMV CST3B UFV US6 1 VESM CST4 SSM USM ESV USV CST6D CST3 0.1 0.1 10 1 100 Footprint Area (mm2) ■ CST3 Unit: mm Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 0.2 4.0 ±0.1 Y Y 1.1 0.25 0.03 0.25 0.03 X X’ 0.6 Y’ 0.35 0.3 0.35 0.38 0.15 0.03 0.35 0.02 0.05 0.03 Bottom View 0.16 Y’ 0.7 0.47 Tape feeding direction Cross section: Y-Y’ X X’ 11.4 Cross section: X-X’ 5.0 9.0 Reel dimensions φ60 +0.02 0.38 –0.03 0.22 φ180 0.65 1.0 0.05 0.65 0.02 0.5 0.03 8.0 φ0.5 0.6 0.05 0.05 0.03 3.5 ±0.05 1.75 φ1.5 ±0.1 Packing quantity 10000 pcs/reel ■ CST3B Unit: mm Typical PCB land pad dimensions Tape dimensions 4.0 ±0.1 0.2 φ1.5 ±0.1 A 0.25 ± 0.03 Bottom View 5.0 11.4 9.0 Reel dimensions 0.45 0.48 + 0.02 - 0.03 Tape feeding direction 0.1 0.45 Packing quantity 55 1.3 1.36 0.65 0.25 0.9 0.6 φ0.5 A’ B’ φ180 0.05 ± 0.03 A’ 2.0 ±0.05 B 0.25 0.2 0.65 1 B 0.7 0.25 ± 0.03 0.65 ± 0.03 0.2 ± 0.02 0.05 ± 0.03 0.65 1.2 ± 0.05 2 0.04 M A B’ B 3 8.0 0.70 ± 0.03 φ60 B 3.5 ±0.05 0.8 ± 0.05 0.04 M A A 1.75 Package dimensions 10000 pcs/reel 9 Packaging 9-1 Compact Surface-Mount Packages ■ VESM (SOT-723) Unit: mm Package dimensions Typical PCB land pad dimensions 0.18 2.0 ±0.05 4.0 ±0.05 Tape dimensions Y Y X’ Y’ 0.8 ± 0.05 Tape feeding direction Cross section: Y-Y’ 1.15 X X’ Cross section: X-X’ 5.0 11.4 Reel dimensions 9.0 0.45 φ180 0.4 0.4 φ60 0.5 ± 0.05 0.63 1.3 0.4 0.13 ± 0.05 3 0.45 Y’ 1 2 1.35 X 0.5 1.2 ± 0.05 0.32 ± 0.05 1.2 ± 0.05 0.8 ± 0.05 0.4 0.4 0.22 ± 0.05 φ0.5 8.0 3.5 ±0.05 1.75 φ1.5 ±0.1 8000 pcs/reel Packing quantity ■ SSM (SOT-416)(SC-75) Unit: mm Typical PCB land pad dimensions Package dimensions 2.0 ±0.05 Tape dimensions 0.2 4.0 ±0.1 Y Y 0.6 + 0.1 0.2 - 0.05 Y’ 0.95 0.6 1.75 0.15 ± 0.05 3 X’ Y’ Tape feeding direction X Cross section: Y-Y’ X’ Cross section: X-X’ 11.4 5.0 Reel dimensions 9.0 0.5 0.5 φ60 0 to 0.1 φ180 2 X 1.4 1 0.55 0.7 ± 0.1 1.6 ± 0.2 1.0 ± 0.1 0.5 0.5 1.6 ± 0.2 0.8 ± 0.1 1.8 φ0.5 8.0 3.5 ±0.05 1.75 φ1.5 ±0.1 3000 pcs/reel Packing quantity ■ USM (SOT-323)(SC-70) Unit: mm Package dimensions Typical PCB land pad dimensions 2.0 ±0.05 Tape dimensions 0.2 4.0 ±0.1 Y Y X Y’ 1.25 1.0 2.2 X 2 X’ Y’ 0.3 Tape feeding direction Cross section: Y-Y’ X’ 3 + 0.1 0.15 - 0.05 Reel dimensions Cross section: X-X’ 5.0 11.4 9.0 φ60 0.65 0.65 0 to 0.1 Packing quantity 56 φ180 1.9 0.65 0.65 1 0.7 0.90 ± 0.1 2.0 ± 0.2 1.3 ± 0.1 + 0.1 -0 0.5 2.3 φ1.05 2.1 ± 0.1 1.25 ± 0.1 8.0 3.5 ±0.05 1.75 φ1.5 ±0.1 3000 pcs/reel ■ UFM Unit: mm Typical PCB land pad dimensions Package dimensions Tape dimensions 2.0 ±0.05 0.2 4.0 ±0.1 Y Y X X’ Y’ 1.7± 0.1 0.8 Y’ 1 2 2.3 0.5 2.1 ± 0.1 0.3 + 0.1 - 0.05 X Cross section: Y-Y’ X’ Cross section: X-X’ 11.4 0.166 ± 0.05 0.7 ± 0.05 2.2 1.9 3 0.85 Tape feeding direction 5.0 Reel dimensions 9.0 0.65 0.65 φ60 φ180 2.0 ± 0.1 0.65 ± 0.05 φ1.1 8.0 3.5 ±0.05 1.75 φ1.5 ±0.1 3000 pcs/reel Packing quantity ■ S-Mini (SOT-346)(SC-59) Unit: mm Typical PCB land pad dimensions Package dimensions Tape dimensions 2.0 ±0.05 0.25 4.0 ±0.1 Y Y + 0.1 - 0.05 2 1.35 Tape feeding direction 3.25 2.4 X Cross section: Y-Y’ X’ Cross section: X-X’ 11.4 5.0 Reel dimensions 0.16 + 0.2 - 0.1 0.3 3 Y’ 1.0 0.4 1 X’ Y’ + 0.1 - 0.06 0.95 0.95 1.9 2.9 ± 0.2 X 0.8 9.0 1.1 0.95 0.95 φ60 0 to 0.1 φ180 + 0.5 - 0.3 + 0.25 1.5 - 0.15 2.5 3.3 φ1.1 8.0 3.5 ±0.05 1.75 φ1.5 ±0.1 3000 pcs/reel Packing quantity ■ TSM Unit: mm Typical PCB land pad dimensions Package dimensions Tape dimensions 2.0 ±0.05 0.25 4.0 ±0.1 Y Y X 0.4 ± 0.1 1.0 2.4 Reel dimensions Cross section: Y-Y’ X’ 11.4 Cross section: X-X’ 5.0 9.0 0.95 0.95 φ60 0 to 0.1 Packing quantity 57 φ180 0.15 0.9 Tape feeding direction 3.15 X 3 0.16 ± 0.05 0.95 0.95 2.9 ± 0.2 1.9 ± 0.2 Y’ Y’ 1 0.7 ± 0.05 X’ 0.8 + 0.2 1.6 - 0.1 2 3.1 φ1.1 + 0.2 2.8 - 0.3 8.0 3.5 ±0.05 1.75 φ1.5 ±0.1 3000 pcs/reel 9 Packaging ■ CST4 Unit: mm Package dimensions Typical PCB land pad dimensions Tape dimensions 0.2 2.0 ±0.05 4.0 ±0.05 Y Y X 0.5 0.2 ± 0.02 0.3 ± 0.02 0.075 ± 0.04 X’ Y’ Y’ 0.5 Tape feeding direction Cross section: Y-Y’ 0.95 0.75 X 0.3 Reel dimensions 0.38 + 0.02 - 0.03 Bottom View X’ Cross section: X-X’ 5.0 11.4 9.0 0.2 φ60 φ180 0.8 ± 0.05 0.5 1.2 ± 0.05 0.75 0.05 ± 0.04 1.35 φ0.5 8.0 3.5 ±0.05 1.75 φ1.5 ±0.1 10000 pcs/reel Packing quantity ■ ESV (SOT-553) Unit: mm Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 0.18 4.0 ±0.1 Y Y X 8.0 φ0.5 1.75 3.5 ±0.05 1.75 φ1.5 ±0.1 X’ 1.6 ± 0.05 2 Y’ 1.75 0.45 X 0.5 Reel dimensions 0.5 Cross section: Y-Y’ X’ Cross section: X-X’ 5.0 11.4 9.0 φ60 0.55 ± 0.05 0.12 ± 0.05 4 1.35 1.0 3 0.65 Tape feeding direction φ180 0.2 ± 0.05 5 1 0.5 0.5 1.6 ± 0.05 Y’ 0.3 1.2 ± 0.05 4000 pcs/reel Packing quantity ■ USV (SOT-353)(SC-88A) Unit: mm Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 0.25 4.0 ±0.1 Y Y 1.25 ± 0.1 0.4 X 2.3 φ1.1 2.1 ± 0.1 8.0 3.5 ±0.05 1.75 φ1.5 ±0.1 X’ 0.8 Y’ 1.2 Tape feeding direction 2.2 X X’ 1.9 4 11.4 Reel dimensions 9.0 0.65 0.65 φ60 + 0.1 0.15 - 0.05 3 5.0 0 to 0.1 Packing quantity 58 φ180 2 + 0.1 0.2 - 0.05 0.65 0.65 5 0.9 ± 0.1 2.0 ± 0.2 1.3 ± 0.1 Y’ 1 3000 pcs/reel ■ UFV Unit: mm Package dimensions Typical PCB land pad dimensions Tape dimensions 0.18 2.0 ±0.05 4.0 ±0.05 Y Y 2.1 ± 0.1 X 0.45 2.3 φ1.1 8.0 3.5 ±0.05 1.75 φ1.5 ±0.1 X’ 1.7 ± 0.1 Y’ 0.85 Tape feeding direction 2.2 1.9 X Cross section: Y-Y’ X’ Cross section: X-X’ 11.4 5.0 Reel dimensions +0.06 0.16 -0.05 9.0 0.65 0.65 φ60 φ180 4 0.7 ± 0.05 1.3 ± 0.1 0.65 0.65 2 3 0.8 5 1 +0.1 0.3 -0.05 2.0 ± 0.1 Y’ Packing quantity 3000 pcs/reel ■ SMV (SOT-25)(SC-74A) Unit: mm Package dimensions Typical PCB land pad dimensions Tape dimensions 2.0 ±0.05 0.25 4.0 ±0.1 Y Y 1.6 + 0.2 - 0.1 X 0.95 0.95 3.23 φ1.1 + 0.2 - 0.3 2.8 8.0 3.5 ±0.05 1.75 φ1.5 ±0.1 X’ Y’ 4 X’ 11.4 5.0 Reel dimensions 0.6 0.8 φ60 0.8 9.0 φ180 + 0.1 - 0.06 0.16 + 0.2 - 0.1 X 1.0 3 1.1 1.3 Tape feeding direction 3.2 2.4 2 5 0.4 ± 0.1 0.95 0.95 1.9 ± 0.2 2.9 ± 0.2 Y’ 1 0 to 0.1 3000 pcs/reel Packing quantity ■ CST6D Unit: mm Tape dimensions 0.45 B’ φ0.5 ±0.05 0.48 ±0.05 A’ 0.6 Tape feeding direction 1.08 ±0.05 11.4 Reel dimensions 0.2 5.0 9.0 0.15 Packing quantity 59 φ180 Bottom View B’ 1.13 A φ60 0.7 ± 0.03 0.075 ± 0.03 B A’ 0.38 + 0.02 - 0.03 0.35 0.35 ± 0.02 ± 0.02 A 2.0 ±0.05 0.25 0.15 0.6 ± 0.02 0.9 ± 0.05 0.2 0.4 ± 0.03 ± 0.03 0.35 0.2 ±0.05 0.98 ±0.05 3.5 ±0.05 0.15 ± 0.03 0.05 ± 0.03 1.0 ± 0.05 B 1.13 φ1.5 +0.1/-0 4.0 ±0.05 1.75 ±0.1 Typical PCB land pad dimensions 8.0 ±0.1 Package dimensions 10000 pcs/reel 9 Packaging ■ ES6 (SOT-563) Unit: mm Typical PCB land pad dimensions Package dimensions Tape dimensions 2.0 ±0.05 0.18 4.0 ±0.1 Y Y 2 5 X 1.0 4 0.55 ± 0.05 3 Y’ 0.5 0.65 Tape feeding direction 1.75 Cross section: Y-Y’ X’ Cross section: X-X’ 0.5 11.4 5.0 Reel dimensions 9.0 φ60 1.6 ± 0.05 φ180 6 X’ Y’ 1.35 1 X 0.3 0.45 0.12 ± 0.05 0.5 0.5 1.6 ± 0.05 1.0 ± 0.05 1.2 ± 0.05 1.75 0.2 ± 0.05 φ0.5 8.0 3.5 ±0.05 1.75 φ1.5 ±0.1 Packing quantity 4000 pcs/reel ■ US6 (SOT-363)(SC-88) Unit: mm Typical PCB land pad dimensions Package dimensions Tape dimensions 2.0 ±0.05 0.25 4.0 ±0.1 Y Y 2.3 φ1.1 8.0 3.5 ±0.05 1.75 φ1.5 ±0.1 2.1 ± 0.1 X 0.4 1.25 ± 0.1 X’ 1.2 2.2 X X’ 1.9 4 0.8 5 3 + 0.1 - 0.05 2 0.2 6 Tape feeding direction 0.15 ± 0.05 11.4 5.0 Reel dimensions 9.0 0.65 0.65 φ60 0 to 0.1 φ180 1.3 ± 0.1 0.65 0.65 1 0.9 ± 0.1 2.0 ± 0.2 Y’ Y’ 3000 pcs/reel Packing quantity ■ UF6 Unit: mm Package dimensions Typical PCB land pad dimensions Tape dimensions 0.18 2.0 ±0.05 4.0 ±0.05 Y Y 2.3 φ1.1 8.0 3.5 ±0.05 1.75 φ1.5 ±0.1 2.1 ± 0.1 X 0.45 1.7 ± 0.1 X’ 0.8 0.85 Tape feeding direction 2.2 X X’ 1.9 4 11.4 Reel dimensions 5.0 9.0 φ60 0.65 0.65 Packing quantity 60 φ180 5 +0.06 0.16 -0.05 1.3 ± 0.1 0.65 0.65 0.7 ± 0.05 2 3 6 +0.1 0.3 -0.05 2.0 ± 0.1 Y’ 1 Y’ 3000 pcs/reel ■ VS-6 Unit: mm Typical PCB land pad dimensions Tape dimensions 4.0 φ1.5 0.3 A φ1.1 A B B' 3.3 0.8 A' 2.0 1.0 A' 4.0 B 3 3.05 11.4 5.0 Reel dimensions 0.25+0.25 -0.15 0.95 9.0 0.95 φ60 0.05±0.05 0.7±0.05 2.9±0.2 0.05 2.4 0.3±0.1 0.16±0.05 1 0.95 1.4 1.55 B' φ180 2.8+0.2 -0.3 1.6+0.2 -0.1 0.6 2.75 0.8 5.2 4 8.0 6 3.5 1.75 Package dimensions Packing quantity 3000 pcs/reel ■ VS-8 Unit: mm Typical PCB land pad dimensions Tape dimensions 1.75 Package dimensions 4.0 φ1.5 A 2.0 A 0.2 2.75 2.2 2.1 B A 4.0 φ1.1 0.95 A B B 1.50 3.1 0.8±0.05 0.05 S S 11.4 5.0 9.0 Reel dimensions 0.40 (8X) A φ60 φ180 0.65 (6X) +0.04 0.24+0.10 –0.09 +0.04 B 4 0.65 0.71–0.16 1.9±0.1 1.5±0.1 1 0.71–0.16 0.65 (8X) 5 8 8.0 0.3+0.1/ –0.05 0.025 M A 3.5 2.9±0.1 0.475 4000 pcs/reel Packing quantity ■ PS-8 Unit: mm φ1.1 8.0 5.5 3.1 2.4 1.12 +0.13 –0.12 11.4 5.0 9.0 0.40 (8X) φ180 Reel dimensions φ60 0.28+0.10 –0.11 0.025 S 0.95 1.15 3.1 1.12 +0.13 –0.12 A 0.8±0.05 S 0.2 2.0 0.17±0.02 B 0.05 M B 0.65 2.9±0.1 4.0 4.0 0.28 +0.10 –0.11 4 0.475 2.8±0.1 2.4±0.1 0.05 M A 5 1 0.33±0.05 φ1.50 2.75 0.33±0.05 8 Tape dimensions 1.75 Typical PCB land pad dimensions 0.65 (8X) Package dimensions 0.65 (6X) Packing quantity 61 3000 pcs/reel 9 Packaging ■ TSON Unit: mm 8 5 1 4 4 0.05 φ1.5 2.0 A M 12 5.5 0.25 3.46 2.65 0.4 φ1.1 4 4 R10 0.4 φ13 φ330 1 120° φ100 S M 18.5 13.5 R135 0.3 0.05 0.7± 0.1 S 1.05 8.0 Reel dimensions 2.2 0.17 ± 0.03 3.3 ± 0.3 30 0.85 ± 0.05 0.575 A 3.1 ± 0.1 (4.75) 0.65 0.6 0.4 3.3 ± 0.3 Tape dimensions 1.75 Typical PCB land pad dimensions 0.3 ± 0.05 0.65 3.1 ± 0.1 0.1 ± 0.05 Package dimensions 2.1 ± 0.1 0.25 ± 0.1 2.0 2.49 ± 0.2 8 Packing quantity 0.25 ± 0.1 5 3000 pcs/reel ■ STP2 Unit: mm Package dimensions Typical PCB land pad dimensions Tape dimensions 1.75 4.0 φ1.5 2.0 0.3 3.8±0.1 4 0.375 1.6±0.1 0.375 4.0 12.0 5.5 1 3 0.42 B M B 0.6±0.05 0.05 S 2 S 0.75 0.46 0.14±0.04 2.2 4.0 φ1.0 φ180 Reel dimensions 1.61 *1 18 4 *2 φ76 1 0.2±0.05 1.93±0.1 1.25±0.1 φ160 4 5 0.35+0.06 –0.1 0.4+0.1 –0.06 R Type 13 2.49 3 0.3±0.1 0.8 L Type φ60 0.025 13 2 3 *1: 2 *2: 4 1.2 1.2 4000 pcs/reel Packing quantity ■ Chip LGA Unit: mm Package dimensions Typical PCB land pad dimensions 1.59 ± 0.05 Tape dimensions φ1.55 4.0 0.18 2.0 B 0.25 ± 0.05 0.5 1.80 φ0.7 8.0 3.5 1.59 ± 0.05 1.75 B φ0.30 A φ0.50 A 4.0 B 0.3 0.65 0.65 A 11.4 S S φ0.3 9.0 0.65 2 M A B 0.65 φ60 0.025 5.0 φ180 0.01 1 1.75 φ0.7 Reel dimensions 0.001 4 0.65 Packing quantity 3 62 4000 pcs/reel ■ TSSOP Advance Unit: mm 0.05 M A 4.0 2.0 (4.75) 3.5 0.166 ± 0.05 2.95 A 1.0 1.1 0.85 18.5 13.5 120 R135 0.8 R10 0.55 4.0 4 Reel dimensions 30 1 1.05 ± 0.2 0.05 S S φ1.7 8.0 0.775 0.75 ± 0.05 0.55 3.5 ± 0.2 9.3 0.55 0.55 4 12.0 1.1 1 5.23 5.05 5.5 +0 0.2 -0.2 0.3 φ1.55 2.0 2.0 2.2 ± 0.2 0.6 ± 0.1 φ13 2.75 ± 0.2 8 φ330 3.65 ± 0.2 5 φ100 0.8 8 4.65 ± 0.3 Tape dimensions 4.1 4.28 Typical PCB land pad dimensions 0.25 ± 0.05 1.75 0.5 ± 0.1 Package dimensions 5 0.8 ± 0.1 Packing quantity 3000 pcs/reel ■ TSSOP-8 Unit: mm Package dimensions Typical PCB land pad dimensions Tape dimensions 1.3 (8X) 4.4 ± 0.1 1.1 0.16 +0.04 -0.02 4.5 0.85 ± 0.05 0.05 ± 0.05 0.65 3.3 max 3.0 ± 0.1 8.0 1.55 4 0.25 ± 0.05 (0.525) 1 3.5 (4.75) 0.40 (8X) 5 6.4 ± 0.3 8 0.6 ± 0.2 3.7 5.5 2.0 12.0 1.75 0.3 4.0 φ1.55 18.5 Reel dimensions 120˚ 13.5 R135 φ330 0.65 (6X) φ100 4.0 R10 30 0.05 2.0 φ13 3000 pcs/reel Packing quantity ■ SOP-8 Unit: mm Typical PCB land pad dimensions Tape dimensions 1.75 Package dimensions 0.3 φ1.55 5 1.27 5.3 5.6 9.3 8.0 +0.1 0.15-0.05 2.55 18.5 120˚ 13.5 R135 0.5 ± 0.2 1.27 (6X) φ13 Packing quantity 63 φ330 4.0 R10 30 +0.1 0.1 -0.05 1.5 ± 0.2 5.0 ± 0.2 0.5 6.8 Reel dimensions 5.5 max 0.1 5.5 12.0 0.25 M φ100 0.4 ± 0.1 5.5 4 0.595 6.5 (4.75) 1.0 (8X) 1 6.0 ± 0.3 4.4 ± 0.2 0.50 (8X) 2.0 8 4.0 2.0 2.0 3000 pcs/reel 9 Packaging ■ SOP Advance Unit: mm Package dimensions Typical PCB land pad dimensions Tape dimensions 0.3 φ1.55 0.4±0.1 M A (4.75) 1.0 0.15±0.05 0.75 0.75 9.3 12.0 5.5 6.6 6.4 5.6 5.8 0.05 5 0.5 1.27 8 5.0±0.2 6.0±0.3 0.5±0.1 1.75 4.0 2.0 2.0 1.2 0.595 4.75 4.25±0.2 8 1.15 1.0 0.75 φ13 3.5±0.2 0.6±0.1 1.27 R135 R10 φ100 φ330 4 18.5 13.5 120˚ 30 1 1.1±0.2 0.05 S S Reel dimensions 4.0 A φ1.7 8.0 1.3 5.0±0.2 4.56 2.0 4 0.166±0.05 0.95±0.05 1 5 0.8±0.1 3000 pcs/reel Packing quantity ■ PW-Mini Unit: mm 1.5 Tape dimensions 4.0 0.3 ø1.5 4.85 9.5 2.3 4.9 0.9 8.0 1.65 1.8 Reel dimensions 13 5.0 +0.08 0.4 -0.05 1.5 ± 0.1 1.5 ± 0.1 ø60 +0.08 0.4 -0.05 ø180 +0.08 0.45-0.05 4.2 max 0.8 min 2.5 ± 0.1 0.4 ± 0.05 5.1 0.5 12.0 1.6 max 4.5 4.7 4.6 max 1.7 max 5.65 2.0 2.0 1 2 3 1.2 1. Gate 2. Drain (Heatsink) 3. Source 1.2 1000 pcs/reel Packing quantity ■ DP Unit: mm Tape dimensions ø3.0 ø1.5 0.3 2.0 10.1 7.5 6.75 1.5 ± 0.2 9.6 ± 0.3 5.5 ± 0.2 4.0 0.6 max 16.0 5.2 ± 0.2 1.75 1.7 ± 0.2 6.8 max 6.8 2.7 8.0 0.6 ± 0.15 0.95 max Reel dimensions 40° 17.5 0.6 ± 0.15 0.6 max R120 3 ø330 2 2 ± 0.5 2 ø80 2.3 ø13 1 R5 2.5 max 2.3 120° 3 0.5 2.3 2.3 1.1 ± 0.2 1. Gate 2. Drain (Heatsink) 3. Source 0.1 ± 0.1 10 2 Packing quantity 64 2 2000 pcs/reel ■ New PW-Mold Unit: mm Tape dimensions 1.75 4.0 0.3 10.1 16.0 ø3.0 ø1.5 2.0 6.75 9.5 ± 0.3 6.8 1.1 ± 0.2 2.7 8.0 1.5 max 3 Reel dimensions 17.5 120° R5 2 ± 0.5 R120 2 ø13 2 2.3 ± 0.2 1 0.6 max 0.1 ± 0.1 0.6 ± 0.15 40° ø330 0.8 max ø80 5.5 ± 0.2 1.2 max 0.6 max 7.5 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 3 10 2.3 ± 0.15 1. Gate 2. Drain (Heatsink) 3. Source 2.3 ± 0.15 2 2 Packing quantity 2000 pcs/reel ■ DPAK Unit: mm Tape dimensions 0.58 max 2.0 φ1.55 ± 0.05 φ1.5 min 0.6 1.6 2.0 10.5 16.0 + 0.4 10.0 – 0.6 6.1 ± 0.12 1.0 max 2.7 1.7 7.5 5.34 ± 0.13 1.75 1.08 ± 0.2 6.6 ± 0.2 4.0 0.3 ± 0.05 6.9 2.5 8.0 15.9-19.4 Reel dimensions 2 1.52 0.07 ± 0.07 2.3 ± 0.1 1 1. Gate 2. Drain (Heatsink) 3. Source 22.4 max + 0.25 – 0.12 2.29 332 max 1.14 max 0.76 ± 0.12 100 ± 2 13.0 ± 0.20 16.4 3 2000 pcs/reel Packing quantity ■ TO-220SM Unit: mm 1.75 Tape dimensions 10.3 max 4.0 0.4 ø2.0 ø1.5 2.0 0.1 40° R120 4.7 max ø13 3 2.6 0.5 2 120° 2 2 4.0 10 0.1 1.32 R8 1 24.4 ø330 2.54 ± 0.25 ø100 Reel dimensions 0.6 0.76 2.54 ± 0.25 5.2 12.0 3 ± 0.2 1.5 1.5 10.8 13.9 10.75 21.5 24.0 10.6 max 9.1 11.5 1.32 1. Gate 2. Drain (Heatsink) 3. Source 2 Packing quantity 65 2 1000 pcs/reel 9 Packaging ■ TO-220SM(W) 1.75 Unit: mm Tape dimensions 10.0 ± 0.3 4.0 0.4 ø2.0 ø1.5 2.0 0.4 ± 0.1 24.4 R8 120° 2 0.4 ± 0.1 ø13 2.34 ± 0.25 ø330 R120 2 ø100 1.6 40° 3 ± 0.2 2.54 ± 0.25 5.2 12.0 Reel dimensions 2.35 ± 0.1 1.4 ± 0.1 21.5 10.8 1.1 0.76 ± 0.1 13.9 10.75 9.0 10.0 ± 0.3 24.0 11.5 9.5 ± 0.2 3 2 2.76 1. Gate 2. Drain (Heatsink) 3. Source 10 3.5 ± 0.2 0.05 ± 0.05 4.0 1 2 2 1000 pcs/reel Packing quantity ■ TFP 9.2 max 7.0 ± 0.2 Tape dimensions 12.0 4.0 0.4 ± 0.1 2.0 1.75 0.8 max Unit: mm ø1.5 0.30 9.2 max 9.5 3.0 ø2.0 120° Reel dimensions 3.0 max 1.0 ± 0.2 1.0 ± 0.2 3.6 ± 0.2 44.0 .0± 0.5 ø330 60° ø80 4 3 R10 ø13 0.4 ± 0.1 2 1. Drain (Heatsink) 2. Gate 3. Source 1 4. Source 2 2.5 25.5 R135 0.7 max 2.0 1.5 2.0 11.5 24.0 10.5 21.5 1 2 1500 pcs/reel Packing quantity 9-2 Through-Hole Packages ■ PW-Mold (Straight) Unit: mm 1.7 ± 0.2 ■ LSTM 6.8 max 5.1 max 0.6 max 5.5 ± 0.2 8.2 max 2.2 max 5.2 ± 0.2 0.75 max 0.6 max 12.0 min 0.8 max 10.5 min 1.0 1.0 max 0.95 max 0.6 ± 0.15 1. Gate 2. Drain (Heatsink) 3. Source 2.3 2.3 2.5 max 0.6 max 1 2 3 2.54 1 2 3 1.5 ± 0.2 6.8 max 0.6 max 5.2 ± 0.2 0.6 max 5.5 ± 0.2 1.6 5.2 ± 0.2 5.5 ± 0.2 6.5 ± 0.2 1.7 ± 0.2 ■ DP (Straight) ■ New PW-Mold2 1.1 ± 0.2 0.95 max 0.6 ± 0.15 0.8 max 2 3 1. Gate 2. Drain (Heatsink) 3. Source 0.6 ± 0.15 1.1 max 0.6 ± 0.15 66 2.3 1 2.3 2 0.6 max 1.1 ± 0.2 1 2.3 2.3 ± 0.2 2.3 3 2.5 max 0.6 max 12.0 min 5.7 4.1 ± 0.2 0.9 1. Gate 2. Drain (Heatsink) 3. Source 0.6 max 1.1 ± 0.2 1. Source 2. Drain 3. Gate 1.27 4.1 max 1.27 ■ TO-220AB ■ TPS Unit: mm 8.0 ± 0.2 10.3 max 0.5 + 0.15 - 0.05 6.7 max 15.7 max 12.6 min 2.5 max 1.5 0.5 13.5 min 1.4 ± 0.1 1.05 ± 0.1 1.6 max 0.5 + 0.15 - 0.05 2 3 1.3 1 0.5 1.32 1. Gate 2. Drain (Heatsink) 3. Source 2.6 2.54 ± 0.25 3.5 ± 0.2 2.5 ± 0.5 4.7 max 0.76 2.5 ± 0.5 1. Source 2. Drain 3. Gate 0.5 7.0 ± 0.2 3.0 ø3.6 ± 0.2 1 2 3 ■ TO-220NIS ■ TO-220(W) 10.0 ± 0.3 2.7 ± 0.2 0.6 ± 0.1 3.9 3.2 2.8 5.6 max 9.0 15.0 ± 0.3 1.1 1.1 12.8 ± 0.5 1 2 2.54 ± 0.25 2.54 ± 0.25 2.53 ± 0.2 1. Gate 2. Drain 3. Source 3 1 4.5 ± 0.2 2.54 0.75 ± 0.15 4.5 ± 0.2 2.54 0.75 ± 0.15 +0.25 0.57 –0.10 2.6 2.8 max 0.75 ± 0.25 0.62 ± 0.15 1. Drain 2. Source 3. Gate 13.0 min 1.1 ± 0.15 ø 0.2 M A 15 ± 0.3 3.0 9.5 ± 0.2 ø 3.2 ± 0.2 10 ± 0.3 A ø 3.65 ± 0.2 3 2 ■ TO-220FL ■ TO-220SIS 10 ± 0.3 10.3 max 2.7 ± 0.2 A 1.32 9.1 10.6 max 2.5 max 15 ± 0.3 3.9 3.0 ø 3.2 ± 0.2 2.54 1 2 3 12.6 min 2.54 ± 0.25 2.6 0.64 ± 0.15 2.6 ± 0.1 2.54 ± 0.25 1. Gate 2. Drain (Heatsink) 3. Source 4.7 max 2.54 1. Gate 2. Drain 3. Source 0.76 0.5 A 1.32 M 0.69 ± 0.15 4.5 ± 0.2 ø 0.2 1.6 max 13 ± 0.5 2.8 max 1.14 ± 0.15 1 2 3 ■ TO-3P(N)IS ■ TO-3P(N) ø 3.2 ± 0.2 3 5.5 ■ TO-3P(L) ø 3.3 ± 0.2 11.0 2.0 2.50 4.0 26.0 ± 0.5 6.0 20.5 max 20.0 ± 0.6 2.5 3.0 + 0.3 - 0.25 5.45 ± 0.15 2.8 + 0.25 - 0.10 5.45 ± 0.15 0.6 1. Gate 2. Drain (Heatsink) 3. Source 1 2 5.2 max 1.0 3 67 15.5 5.45 ± 0.2 2 3 3.15 + 0.2 - 0.1 1.0 1 5.0 ± 0.3 4.8 max 2 19.4 max 5.45 ± 0.2 1. Gate 2. Drain 3. Source 2.8 1 3.5 21.0 ± 0.5 3.6 max 2.0 5.45 ± 0.2 + 0.3 0.6 - 0.1 5.45 ± 0.2 ø 3.6 ± 0.2 1.0 + 0.25 - 0.15 0.6 + 0.25 - 0.15 4.5 9.0 + 0.3 1.0 - 0.25 1.8 max 20.0 ± 0.3 1.0 2.0 2.0 ± 0.3 1. Gate 2. Drain (Heatsink) 3. Source 15.8 ± 0.5 20.5 ± 0.5 2.0 3.3 max 15.9 max OVERSEAS SUBSIDIARIES AND AFFILIATES Toshiba America Electronic Components, Inc. • Headquarters-Irvine, CA Tel: (949)623-2900 Fax: (949)474-1330 • Buffalo Grove (Chicago) Tel: (847)484-2400 Fax: (847)541-7287 • Duluth, GA (Atlanta) Tel: (770)931-3363 Fax: (770)931-7602 • San Jose Engineering Center, CA Tel: (408)526-2400 Fax:(408)526-2410 • Wixom (Detroit) Tel: (248)347-2607 Fax: (248)347-2602 Toshiba Electronics do Brasil Ltda. (As of April 01, 2009) Toshiba Electronics Europe GmbH Toshiba Electronics Asia, Ltd. • Düsseldorf Head Office • Hong Kong Head Office Tel: (0211)5296-0 Fax: (0211)5296-400 • France Branch Tel: (1)48-12-48-12 Fax: (1)48-94-51-15 • Italy Branch Tel: (039)68701 Fax: (039)6870205 • Spain Branch Tel: (91)660-6798 Fax:(91)660-6799 • U.K. Branch Tel: (0870)060-2370 Fax: (01252)53-0250 • Sweden Branch Tel: (08)704-0900 Fax: (08)80-8459 Tel: (011)2539-6681 Fax: (011)2539-6675 Toshiba Electronics Asia (Singapore) Pte. Ltd. Toshiba India Private Ltd. Tel: (6278)5252 Fax: (6271)5155 Tel: (011)2331-8422 Fax: (011)2371-4603 Toshiba Electronics Service (Thailand) Co., Ltd. Tel: (02)501-1635 Fax: (02)501-1638 Toshiba Electronics Trading (Malaysia) Sdn. Bhd. • Kuala Lumpur Head Office Tel: (03)5631-6311 Fax: (03)5631-6307 • Penang Office Tel: (04)226-8523 Fax: (04)226-8515 Tel: 2375-6111 Fax: 2375-0969 2009-9 BCE0082B • Beijing Office Tel: (010)6590-8796 Fax: (010)6590-8791 • Chengdu Office Tel: (028)8675-1773 Fax: (028)8675-1065 • Qingdao Office Tel: (532)8579-3328 Fax: (532)8579-3329 Toshiba Electronics Shenzhen Co., Ltd. Tel: (0755)2399-6897 Fax: (0755)2399-5573 Toshiba Electronics (Shanghai) Co., Ltd. • Shanghai Head Office Tel: (021)6841-0666 Fax: (021)6841-5002 • Hangzhou Office Tel: (0571)8717-5004 Fax: (0571)8717-5013 • Nanjing Office Tel: (025)8689-0070 Fax: (025)8689-0125 Toshiba Electronics (Dalian) Co., Ltd. Tel: (0411)8368-6882 Fax: (0411)8369-0822 Tsurong Xiamen Xiangyu Trading Co., Ltd. Tel: (0592)226-1398 Fax: (0592)226-1399 Toshiba Electronics Philippines, Inc. Toshiba Electronics Korea Corporation Tel: (02)750-5510 Fax: (02)750-5511 • Seoul Head Office Tel: (02)3484-4334 Fax: (02)3484-4302 • Daegu Office Tel: (053)428-7610 Fax: (053)428-7617 • Taipei Head Office Tel: (02)2508-9988 Fax: (02)2508-9999 • Kaohsiung Office Tel: (07)237-0826 Fax: (07)236-0046 Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 2009 Previous edition: BCE0082A 2009-9(1k)SO-DQ Semiconductor Company Website: http://www.semicon.toshiba.co.jp/eng MOSFETs Toshiba Electronics Taiwan Corporation
TK14A45D(STA4,Q,M)
1. 物料型号:文档中列出了多种MOSFET的型号,例如2SK3310, 2SK3309, 2SK3743等,它们属于不同的系列,如MACH系列和High-Speed Diode系列(HSD系列)。

2. 器件简介:文档提到了MACH系列和High-Speed Diode系列的特点。MACH系列提供了比市场上现有的π-MOS系列更高的开关速度。High-Speed Diode系列通过使用寿命控制实现了更高的内部二极管速度。

3. 引脚分配:文档中没有明确提到具体的引脚分配图,但是提到了MOSFET的三个主要引脚:门极(Gate),漏极(Drain),源极(Source)。

4. 参数特性:文档提供了不同型号MOSFET的电气特性,包括绝对最大额定值、导通电阻(RDS(ON)),阈值电压(Vos),开启电压(Vgs),以及在特定条件下的功耗(Pd)。

5. 功能详解:文档中对MACH II系列的Qg损耗进行了详细说明,指出其Qg损耗比标准系列降低了40%。此外,还提供了不同系列的MOSFET的Qg损耗和Ciss特性的比较。

6. 应用信息:文档中列出了不同型号MOSFET的应用领域,如AC适配器、开关电源、电机控制、逆变器等。

7. 封装信息:文档提供了不同型号MOSFET的封装类型,如TO-220NIS、TO-220FL/SM、TO-3P(N)等,并给出了封装的尺寸信息。
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