TK1R4F04PB
MOSFETs
Silicon N-channel MOS (U-MOS-H)
TK1R4F04PB
1. Applications
•
Automotive
•
Switching Voltage Regulators
•
DC-DC Converters
•
Motor Drivers
2. Features
(1)
AEC-Q101 qualified
(2)
Low drain-source on-resistance: RDS(ON) = 1.1 mΩ (typ.) (VGS = 10 V)
(3)
Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(4)
Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (Heatsink)
3: Source
TO-220SM(W)
Start of commercial production
©2016-2020
Toshiba Electronic Devices & Storage Corporation
1
2015-10
2020-06-24
Rev.8.0
TK1R4F04PB
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
VDSS
40
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
160
Drain current (pulsed)
(Note 1)
IDP
480
Power dissipation
(Note 2)
PD
205
W
Single-pulse avalanche energy
(Note 3)
EAS
377
mJ
Single-pulse avalanche current
(Note 3)
IAS
100
A
Channel temperature
(Note 4)
Tch
175
Storage temperature
(Note 4)
Tstg
-55 to 175
Note:
(Tc = 25 )
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
©2016-2020
Toshiba Electronic Devices & Storage Corporation
2
2020-06-24
Rev.8.0
TK1R4F04PB
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Symbol
Max
Unit
Rth(ch-c)
0.73
/W
Note 1: Ensure that the channel temperature does not exceed 175 .
Note 2: The power dissipation value is calculated based on the channel-to-case thermal resistance. However, the safe
operating area is not only limited to thermal limits but also the current concentration phenomenon. This device
should not be used under conditions outside its safe operating area shown herein.
Note 3: VDD = 32 V, Tch = 25 (initial), L = 29 µH, RG = 1 Ω, IAS = 100 A, VGS = +15/0 V
Note 4: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
©2016-2020
Toshiba Electronic Devices & Storage Corporation
3
2020-06-24
Rev.8.0
TK1R4F04PB
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Gate leakage current
Test Condition
IGSS
VGS = ±20 V, VDS = 0 V
Drain cut-off current
Min
Typ.
Max
Unit
±1
µA
IDSS
VDS = 40 V, VGS = 0 V
10
Drain-source breakdown voltage
V(BR)DSS
ID = 10 mA, VGS = 0 V
40
Drain-source breakdown voltage
V(BR)DSX
ID = 10 mA, VGS = -20 V
20
Vth
VDS = 10 V, ID = 0.5 mA
2.0
3.0
VGS = 6 V, ID = 80 A
1.3
1.90
VGS = 10 V, ID = 80 A
1.1
1.35
Min
Typ.
Max
Unit
5500
pF
Gate threshold voltage
Drain-source on-resistance
RDS(ON)
V
mΩ
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Input capacitance
Ciss
Test Condition
VDS = 10 V, VGS = 0 V, f = 300 kHz
Reverse transfer capacitance
Crss
490
Output capacitance
Coss
3400
Switching time (rise time)
tr
14
Switching time (turn-on time)
ton
47
tf
23
toff
82
Switching time (fall time)
Switching time (turn-off time)
See Fig. 6.2.1.
ns
VDD ≈ 20 V
VGS = 0 V/10 V
ID = 80 A
RL = 0.25 Ω
RGG = RGS = 4.7 Ω
Duty ≤ 1 %, tw = 10 µs
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Total gate charge (gate-source plus
gate-drain)
Qg
Test Condition
VDD ≈ 32 V, VGS = 10 V, ID = 160 A
Min
Typ.
Max
Unit
103
nC
Gate-source charge 1
Qgs1
30
nC
Gate-drain charge
Qgd
24
nC
unless otherwise specified)
25
6.4. Source-Drain Characteristics (Ta = 25
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
A
Reverse drain current (DC)
(Note 5)
IDR
160
Reverse drain current (pulsed)
(Note 5)
IDRP
480
Diode forward voltage
VDSF
IDR = 160 A, VGS = 0 V
-1.2
V
Reverse recovery time
trr
100
ns
Reverse recovery charge
Qrr
IDR = 160 A, VGS = 0 V
-dIDR/dt = 50 A/µs
100
nC
Note 5: Ensure that the channel temperature does not exceed 175 .
©2016-2020
Toshiba Electronic Devices & Storage Corporation
4
2020-06-24
Rev.8.0
TK1R4F04PB
7. Marking (Note)
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
©2016-2020
Toshiba Electronic Devices & Storage Corporation
5
2020-06-24
Rev.8.0
TK1R4F04PB
8. Moisture-Proof Packing
This device is packed in a moisture-proof laminated aluminum bag.
8.1. Precautions for Transportation and Storage (Note)
(1)
Avoid excessive vibration during transportation.
(2)
Do not toss or drop the packed devices to avoid ripping of the bag.
(3)
After opening the moisture-proof bag, the devices should be assembled within two weeks in an
(4)
The moisture-proof bag may be stored unopened for up to 24 months at 5 to 30 and RH90 % or
environment of 5 to 30 and RH70 % or below. Perform reflow at most twice.
below.
(5)
If, upon opening the bag, the moisture indicator card shows humidity of 30 % or above (the color of the
30 % dot has changed from blue to pink) or the expiration date has passed, the devices should be baked
as follows:
Note:
Baking conditions: 125 for 48 hours.
Since the tape materials are not heat-proof, devices should be placed on either heat-proof trays or aluminum
magazines when baking.
The humidity indicator shows an approximate ambient humidity at 25 .
If the ambient humidity is below 30 %, the color of all the indicator dots is blue.
If, upon opening the bag, the color of the 30 % dot has changed from blue to pink, the
devices should be baked before assembly.
Fig. 8.1.1 Humidity Indicator
©2016-2020
Toshiba Electronic Devices & Storage Corporation
6
2020-06-24
Rev.8.0
TK1R4F04PB
9. Characteristics Curves (Note)
Fig. 9.1 ID - VDS
Fig. 9.2 ID - VDS
Fig. 9.3 ID - VGS
Fig. 9.4 VDS - VGS
Fig. 9.5 RDS(ON) - ID
Fig. 9.6 RDS(ON) - Ta
©2016-2020
Toshiba Electronic Devices & Storage Corporation
7
2020-06-24
Rev.8.0
TK1R4F04PB
Fig. 9.7 IDR - VDS
Fig. 9.8 Capacitance - VDS
Fig. 9.9 Vth - Ta
Fig. 9.10 Dynamic Input/Output Characteristics
Fig. 9.11 PD - Tc
(Guaranteed Maximum)
Fig. 9.12 V(BR)DSS - Ta
©2016-2020
Toshiba Electronic Devices & Storage Corporation
8
2020-06-24
Rev.8.0
TK1R4F04PB
Fig. 9.13 rth/Rth(ch-c) - tw
(Guaranteed Maximum)
Fig. 9.15 EAS - Tch
(Guaranteed Maximum)
Fig. 9.14 Safe Operating Area
(Guaranteed Maximum)
Fig. 9.16 Test Circuit/Waveform
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2016-2020
Toshiba Electronic Devices & Storage Corporation
9
2020-06-24
Rev.8.0
TK1R4F04PB
Package Dimensions
Unit: mm
Weight: 1.07 g (typ.)
Package Name(s)
TOSHIBA: 2-10W1S
Nickname: TO-220SM(W)
©2016-2020
Toshiba Electronic Devices & Storage Corporation
10
2020-06-24
Rev.8.0
TK1R4F04PB
RESTRICTIONS ON PRODUCT USE
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• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
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for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which
minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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©2016-2020
Toshiba Electronic Devices & Storage Corporation
11
2020-06-24
Rev.8.0