TK210V65Z
MOSFETs
Silicon N-Channel MOS (DTMOS�)
TK210V65Z
1. Applications
•
Switching Power Supplies
2. Features
(1)
Low drain-source on-resistance: RDS(ON) = 0.175 Ω (typ.)
(2)
High-speed switching properties with the lower capacitance.
(3)
Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)
3. Packaging and Internal Circuit
1: Gate
2: Source 1
3, 4: Source 2
5: Drain (heatsink)
Notice: Only use source 1 pin for
gate input signal return. Please
make sure that the main current
flows into the source 2 pin.
DFN8x8
4. Absolute Maximum Ratings (Note) (T a = 25 � unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
650
V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
15
Drain current (pulsed)
(Note 1)
IDP
60
PD
130
W
(Note 2)
EAS
165
mJ
IAS
3.7
A
Reverse drain current (DC)
(Note 1)
IDR
15
Reverse drain current (pulsed)
(Note 1)
Power dissipation
(Tc = 25 �)
Single-pulse avalanche energy
Single-pulse avalanche current
A
IDRP
60
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
�
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2020-02
©2019-2020
Toshiba Electronic Devices & Storage Corporation
1
2020-10-16
Rev.2.0
TK210V65Z
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Symbol
Max
Unit
Rth(ch-c)
0.961
�/W
Note 1: Ensure that the channel temperature does not exceed 150 �.
Note 2: VDD = 90 V, Tch = 25 � (initial), L = 21.4 mH, IAS = 3.7 A
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
©2019-2020
Toshiba Electronic Devices & Storage Corporation
2
2020-10-16
Rev.2.0
TK210V65Z
6. Electrical Characteristics
6.1. Static Characteristics (T a = 25 � unless otherwise specified)
Characteristics
Symbol
Gate leakage current
Typ.
Max
Unit
�
�
±1
µA
VGS = ±30 V, VDS = 0 V
IDSS
VDS = 650 V, VGS = 0 V
�
�
2
V(BR)DSS
ID = 10 mA, VGS = 0 V
650
�
�
Gate threshold voltage
Vth
Drain-source on-resistance
Min
IGSS
Drain cut-off current
Drain-source breakdown voltage
Test Condition
RDS(ON)
V
VDS = 10 V, ID = 0.61 mA
3
�
4
VGS = 10 V, ID = 7.5 A
�
0.175
0.21
Ω
6.2. Dynamic Characteristics (T a = 25 � unless otherwise specified)
Characteristics
Symbol
Input capacitance
Ciss
Test Condition
VDS = 300 V, VGS = 0 V, f = 100 kHz
Min
Typ.
Max
Unit
�
1370
�
pF
Reverse transfer capacitance
Crss
�
1.5
�
Output capacitance
Coss
�
34
�
Effective output capacitance
Co(er)
VDS = 0 to 400 V, VGS = 0 V
�
53
�
pF
rg
VDS = OPEN , f = 1 MHz
�
3
�
Ω
Switching time (rise time)
tr
See Figure 6.2.1
�
14
�
ns
Switching time (turn-on time)
ton
�
34
�
tf
�
4
�
toff
�
66
�
ns
70
�
�
V/ns
Gate resistance
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
dv/dt
VDS ≤ V(BR)DSS, ID ≤ 7.5 A
VDD ≈ 400 V
VGS = 10 V/0 V
ID = 7.5 A
RL = 53 Ω
RG = 10 Ω
Duty ≤ 1 %, tw = 10 µs
Fig. 6.2.1
Switching Time Test Circuit
6.3. Gate Charge Characteristics (T a = 25 � unless otherwise specified)
Characteristics
Symbol
Total gate charge (gate-source plus
gate-drain)
Qg
Test Condition
VDD ≈ 400 V, VGS = 10 V, ID = 15 A
Min
Typ.
Max
Unit
�
25
�
nC
Gate-source charge 1
Qgs1
�
7.9
�
Gate-drain charge
Qgd
�
7.1
�
6.4. Source-Drain Characteristics (T a = 25 � unless otherwise specified)
Characteristics
Diode forward voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V
VDSF
IDR = 15 A, VGS = 0 V
�
�
-1.7
Reverse recovery time
trr
270
�
ns
Qrr
VDD = 400 V,
IDR = 7.5 A, VGS = 0 V
-dIDR/dt = 100 A/µs
�
Reverse recovery charge
�
3.0
�
µC
�
22
�
A
VDD ≤ 400 V, IDR ≤ 7.5 A, VGS = 0 V
40
�
�
V/ns
Peak reverse recovery current
Diode dv/dt ruggedness
Irr
dv/dt
©2019-2020
Toshiba Electronic Devices & Storage Corporation
3
2020-10-16
Rev.2.0
TK210V65Z
7. Marking
Fig. 7.1
©2019-2020
Toshiba Electronic Devices & Storage Corporation
4
Marking
2020-10-16
Rev.2.0
TK210V65Z
8. Characteristics Curves (Note)
Fig. 8.1
I D - V DS
Fig. 8.3
I D - V GS
Fig. 8.5
Fig. 8.2
Fig. 8.4
V DSS - T a
©2019-2020
Toshiba Electronic Devices & Storage Corporation
Fig. 8.6
5
I D - V DS
V DS - V GS
R DS(ON) - I D
2020-10-16
Rev.2.0
TK210V65Z
Fig. 8.7
R DS(ON) - T a
Fig. 8.9
Fig. 8.11
Fig. 8.8
C - V DS
Fig. 8.10
Dynamic Input/Output Characteristics
©2019-2020
Toshiba Electronic Devices & Storage Corporation
6
Fig. 8.12
I DR - V DS
V th - T a
E OSS - V DS
2020-10-16
Rev.2.0
TK210V65Z
Fig. 8.13 r th - t w
(Guaranteed Maximum)
Fig. 8.14 E AS - T ch
(Guaranteed Maximum)
Fig. 8.16
Fig. 8.15 P D - T c
(Guaranteed Maximum)
Test Circuit/Waveform
©2019-2020
Toshiba Electronic Devices & Storage Corporation
Fig. 8.17 I D - T c
(Guaranteed Maximum)
7
2020-10-16
Rev.2.0
TK210V65Z
Fig. 8.18 Safe Operating Area
(Guaranteed Maximum)
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2019-2020
Toshiba Electronic Devices & Storage Corporation
8
2020-10-16
Rev.2.0
TK210V65Z
Package Dimensions
Unit: mm
Weight: 0.175 g (typ.)
Package Name(s)
TOSHIBA: 2-8T1A
Nickname: DFN8x8
©2019-2020
Toshiba Electronic Devices & Storage Corporation
9
2020-10-16
Rev.2.0
TK210V65Z
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Toshiba Electronic Devices & Storage Corporation
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2020-10-16
Rev.2.0
