TK2Q60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK2Q60D
Switching Regulator Applications
1.5 ± 0.2
5.2 ± 0.2
0.6 MAX.
5.5 ± 0.2
6.5 ± 0.2
Low drain-source ON-resistance: RDS (ON) = 3.2 Ω(typ.)
High forward transfer admittance: |Yfs| = 1.0 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
1.6
•
•
•
•
Unit: mm
1.1 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
V
2
0.8 MAX.
3
0.6 ± 0.15
1.1 MAX.
DC
(Note 1)
ID
2
Pulse
(Note 1)
IDP
8
Drain power dissipation (Tc = 25°C)
PD
60
W
Single pulse avalanche energy
(Note 2)
EAS
101
mJ
Avalanche current
IAR
2
A
Repetitive avalanche energy (Note 3)
EAR
6.0
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55 to 150
Drain current
1
2.3
2.3 ± 0.2
2.3
Characteristics
0.6 MAX.
5.7
4.1 ± 0.2
0.9
A
0.6 ± 0.15
1.
2.
3.
GATE
DRAIN（HEAT SINK）
SOURCE
JEDEC
―
°C
JEITA
―
°C
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.08
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
1
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 44.1 mH, RG = 25 Ω, IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
Start of commercial production
2009-03
1
2015-11-28
TK2Q60D
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
―
―
±1
μA
Drain cut-off current
IDSS
VDS = 600 V, VGS = 0 V
―
―
10
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
―
―
V
Vth
VDS = 10 V, ID = 1 mA
2.4
―
4.4
V
Gate threshold voltage
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID =1 A
―
3.2
4.3
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID =1 A
0.3
1.0
―
S
Input capacitance
Ciss
―
280
―
Reverse transfer capacitance
Crss
―
1.5
―
Output capacitance
Coss
―
30
―
―
15
―
―
35
―
―
7
―
―
55
―
―
7
―
―
4
―
―
3
―
Rise time
VDS = 25 V, VGS = 0 V, f = 1 MHz
Turn-on time
ton
VOUT
RL = 200 Ω
50 Ω
Switching time
Fall time
ID = 1 A
10 V
VGS
0V
tr
pF
ns
tf
VDD ≈ 200 V
Turn-off time
toff
Duty ≤ 1%, tw = 10 μs
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 2 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDR
―
―
―
2
A
IDRP
―
―
―
8
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
―
―
−1.7
V
Reverse recovery time
trr
IDR = 2 A, VGS = 0 V,
―
550
―
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/μs
―
2.2
―
μC
Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K2Q60D
Part No.
(or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
2
2015-11-28
TK2Q60D
ID – VDS
ID – VDS
4
1.6
8
Common source 10
Tc = 25°C
Pulse test
7.5
10
7.3
(A)
Common source
Tc = 25°C
Pulse test
7
Drain current ID
Drain current ID
(A)
2
1.2
6.5
0.8
6
0.4
8.5
9
3.2
8
2.4
7.5
1.6
7
6.5
VGS = 6 V
0.8
VGS = 5.5 V
0
0
0
2
4
6
8
0
10
Drain−source voltage VDS (V)
10
20
ID – VGS
VDS – VGS
Common source
VDS = 20 V
Pulse test
Drain−source voltage VDS (V)
(A)
Drain current ID
50
20
2.4
1.6
100
Tc = −55°C
25
0.8
0
Common source
Tc = 25°C
Pulse test
16
12
ID = 2 A
8
1
4
0.5
0
2
0
4
6
8
Gate−source voltage VGS
0
10
(V)
4
8
12
16
Gate−source voltage VGS
|Yfs| − ID
20
(V)
RDS (ON) − ID
10
100
Common source
VDS = 10 V
Pulse test
Drain−source ON-resistance
RDS (ON) (Ω)
Forward transfer admittance
|Yfs| (S)
40
Drain−source voltage VDS (V)
4
3.2
30
Tc = −55°C
1
100
25
0.1
0.1
1
Drain current ID
Common source
Tc = 25°C
Pulse test
10
VGS = 10 V
1
0.1
10
(A)
Drain current ID
3
10
1
(A)
2015-11-28
TK2Q60D
IDR − VDS
RDS (ON) – Tc
10
Common source
Tc = 25°C
Pulse test
(A)
Common source
VGS = 10 V
Pulse test
Drain reverse current IDR
12
2
8
1
ID = 0.5 A
4
1
10
5
1
3
−40
0
40
80
Case temperature Tc
120
0
160
-0.3
(°C)
-1.5
Gate threshold voltage Vth (V)
5
Ciss
Capacitance C (pF)
-1.2
Vth − Tc
C – VDS
100
Coss
10
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
Crss
10
1
4
3
2
1
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
−80
100
Drain−source voltage VDS (V)
−40
0
40
80
Case temperature Tc
500
Drain−source voltage VDS (V)
(W)
80
60
40
20
40
80
Case temperature Tc
120
160
(°C)
Dynamic input/output
characteristics
PD − Tc
Drain power dissipation PD
-0.9
-0.6
Drain−source voltage VDS (V)
1000
0
0
VGS = 0 V
0.1
120
400
(°C)
VDS
200 V
12
300
VDD = 100 V
400 V
8
200
VGS
100
0
0
160
20
Common source
ID = 2 A
Tc = 25°C
Pulse test
16
4
2
4
6
8
(V)
0
−80
Gate−source voltage VGS
Drain−source ON-resistance
RDS (ON) (Ω)
16
0
10
Total gate charge Qg (nC)
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2015-11-28
TK2Q60D
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
rth – tw
10
1
Duty=0.5
0.2
0.1
PDM
0.1 0.05
Single pulse
t
0.02
T
0.01
0.01
10μ
Duty = t/T
Rth (ch-c) = 2.08 °C/W
100μ
1m
10m
100m
Pulse width tw
1
10
(s)
Safe operating area
EAS – Tch
160
120
EAS
10 ID max (Pulse) *
100 μs *
ID max (Continuous)
Avalanche energy
Drain current ID
(A)
(mJ)
100
1 ms *
1
DC operation
Tc = 25°C
0.1
0.001
1
10
40
0
25
* Single nonrepetitive
0.01
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
80
50
75
100
125
Channel temperature (initial) Tch
150
(°C)
VDSS max
100
1000
Drain−source voltage VDS (V)
15 V
BVDSS
IAR
−15 V
VDD
WAVEFORM
TEST CIRCUIT
RG = 25 Ω
VDD = 90 V, L = 44.1 mH
5
VDS
Ε AS =
1
B VDSS
⋅ L ⋅ I2 ⋅
B
2
−
VDSS VDD
2015-11-28
TK2Q60D
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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2015-11-28
