TK31N60W5
MOSFETs
Silicon N-Channel MOS (DTMOS)
TK31N60W5
1. Applications
•
Switching Voltage Regulators
2. Features
(1)
Fast reverse recovery time: trr = 135 ns (typ.)
(2)
Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.)
by used to Super Junction Structure : DTMOS
(3)
Easy to control Gate switching
(4)
Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (Heatsink)
3: Source
TO-247
Start of commercial production
1
2013-10
2014-02-25
Rev.2.0
TK31N60W5
unless otherwise specified)
4. Absolute Maximum Ratings (Note) (Ta = 25
25
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
30.8
Drain current (pulsed)
(Note 1)
IDP
123
PD
230
W
(Note 2)
EAS
437
mJ
IAR
7.7
A
Reverse drain current (DC)
(Note 1)
IDR
30.8
Reverse drain current (pulsed)
(Note 1)
IDRP
123
Tch
150
Storage temperature
Tstg
-55 to 150
Mounting torque
TOR
0.8
Power dissipation
(Tc = 25)
Single-pulse avalanche energy
Avalanche current
Channel temperature
Note:
A
Nm
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-case thermal resistance
Rth(ch-c)
0.543
/W
Channel-to-ambient thermal resistance
Rth(ch-a)
50
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 12.9 mH, RG = 25 Ω, IAR = 7.7 A
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
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2014-02-25
Rev.2.0
TK31N60W5
6. Electrical Characteristics
unless otherwise specified)
6.1. Static Characteristics (Ta = 25
25
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
Test Condition
IGSS
VGS = ±30 V, VDS = 0 V
IDSS
VDS = 600 V, VGS = 0 V
V(BR)DSS
ID = 10 mA, VGS = 0 V
Min
Typ.
Max
Unit
±1
µA
100
600
V
Vth
VDS = 10 V, ID = 1.5 mA
3
4.5
RDS(ON)
VGS = 10 V, ID = 15.4 A
0.082
0.099
Ω
Min
Typ.
Max
Unit
3000
pF
unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Characteristics
Input capacitance
Symbol
Ciss
Test Condition
VDS = 300 V, VGS = 0 V, f = 100 kHz
Reverse transfer capacitance
Crss
9.5
Output capacitance
Coss
70
Effective output capacitance
Co(er)
VDS = 0 to 400 V, VGS = 0 V
123
rg
VDS = OPEN, f = 1 MHz
2
Ω
Switching time (rise time)
tr
See Figure 6.2.1
80
ns
Switching time (turn-on time)
ton
120
tf
8.5
toff
165
50
V/ns
Gate resistance
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
dv/dt
VDD = 0 to 400 V, ID = 7.7 A
Fig. 6.2.1 Switching Time Test Circuit
unless otherwise specified)
6.3. Gate Charge Characteristics (Ta = 25
25
Characteristics
Total gate charge (gate-source plus
gate-drain)
Symbol
Test Condition
Min
Typ.
Max
Unit
Qg
VDD ≈ 400 V, VGS = 10 V, ID = 30.8 A
105
nC
Gate-source charge 1
Qgs1
24
Gate-drain charge
Qgd
65
Min
Typ.
Max
Unit
V
unless otherwise specified)
6.4. Source-Drain Characteristics (Ta = 25
25
Characteristics
Diode forward voltage
Symbol
Test Condition
VDSF
IDR = 30.8 A, VGS = 0 V
-1.7
Reverse recovery time
trr
135
220
ns
Qrr
IDR = 15.4 A, VGS = 0 V
-dIDR/dt = 100 A/µs
Reverse recovery charge
0.6
µC
10
A
IDR = 15.4 A, VGS = 0 V, VDD = 400 V
50
V/ns
Peak reverse recovery current
Diode dv/dt ruggedness
Irr
dv/dt
3
2014-02-25
Rev.2.0
TK31N60W5
7. Marking (Note)
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
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2014-02-25
Rev.2.0
TK31N60W5
8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 VDSS - Ta
Fig. 8.6 RDS(ON) - ID
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2014-02-25
Rev.2.0
TK31N60W5
Fig. 8.7 RDS(ON) - Ta
Fig. 8.8 IDR - VDS
Fig. 8.9 C - VDS
Fig. 8.10 EOSS - VDS
Fig. 8.11 Vth - Ta
Fig. 8.12 Dynamic Input/Output Characteristics
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2014-02-25
Rev.2.0
TK31N60W5
Fig. 8.13 rth - tw
(Guaranteed Maximum)
Fig. 8.14 EAS - Tch
(Guaranteed Maximum)
Fig. 8.15 PD - Tc
(Guaranteed Maximum)
Fig. 8.16 Test Circuit/Waveform
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2014-02-25
Rev.2.0
TK31N60W5
Fig. 8.17 Safe Operating Area
(Guaranteed Maximum)
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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2014-02-25
Rev.2.0
TK31N60W5
Package Dimensions
Unit: mm
Weight: 6.15 g (typ.)
Package Name(s)
JEITA: SC-65
TOSHIBA: 2-16L1A
Nickname: TO-247
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2014-02-25
Rev.2.0
TK31N60W5
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• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
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written permission, reproduction is permissible only if reproduction is without alteration/omission.
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minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage
to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate
the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA
information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the
precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application
with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications,
including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating
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applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING
AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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2014-02-25
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