TK60D08J1(Q)

TK60D08J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK60D08J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 86 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 6.2 mΩ (typ.) • High forward transfer admittance: |Yfs| = 120 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) • Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 75 V Drain-gate voltage (RGS = 20 kΩ) VDGR 75 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 60 Pulse (Note 1) IDP 240 Drain power dissipation (Tc = 25°C) PD 140 W JEDEC - Single pulse avalanche energy (Note 2) EAS 498 mJ JEITA - Avalanche current IAR 60 A Repetitive avalanche energy (Note 3) EAR 9.2 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current A TOSHIBA 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Internal Connection Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.89 °C/W Thermal resistance, channel to ambient Rth (ch-a) 83.3 °C/W 1 3 Note 1: Ensure that the channel & lead temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C, L = 200 μH, IAR = 60 A, RG = 1Ω Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Handle with care. 1 2009-09-29 TK60D08J1 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS VDS = 75 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 75 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = -20 V 60 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 VGS = 4.5 V, ID = 30A ⎯ 7.1 9.3 VGS = 10 V, ID = 30A ⎯ 6.2 7.8 VDS = 10 V, ID = 30 A 60 120 ⎯ ⎯ 5450 ⎯ ⎯ 320 ⎯ ⎯ 1260 ⎯ ⎯ 5 ⎯ ⎯ 20 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON resistance RDS (ON) Forward transfer admittance ⎪Yfs⎪ Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 10V, VGS = 0 V, f = 1 MHz tr Turn-ON time ID = 30 A VOUT 10 V VGS 0V ton Fall time 4.7 Ω Switching time 15 ⎯ ⎯ 96 ⎯ Total gate charge (gate-source plus gate-drain) VDD ∼ − 60 V, VGS = 5 V, ID = 60A ⎯ 48 ⎯ VDD ∼ − 60 V, VGS = 10 V, ID = 60A ⎯ 86 ⎯ ⎯ 16 ⎯ ⎯ 20 ⎯ ⎯ 27 ⎯ VDD ∼ − 30 V Duty < = 1%, tw = 10 μs toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd Gate switch charge QSW VDD ∼ − 60 V, VGS = 10 V, ID = 60A V mΩ S pF ns ⎯ tf Turn-OFF time RL = 1 Ω V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 60 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 240 A (Note 1) Forward voltage (diode) VDSF IDR = 60 A, VGS = 0 V ⎯ −0.9 −1.2 V Reverse recovery time trr IDR = 60 A, VGS = 0 V, ⎯ 63 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 50 A/μs ⎯ 63 ⎯ nC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K60D08J 1 Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 TK60D08J1 ID – VDS 100 ID – VDS 10 Common source Tc = 25°C Pulse Test 200 5 4.5 Drain current 60 3.5 40 20 3 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 120 3.75 80 3.5 40 3.25 0 4 (A) ID 3.75 3.25 3 0 1.0 0 (V) 2 4 (V) (V) Common source Tc = 25°C Pulse Test 0.8 VDS 120 80 Drain-source voltage ID (A) Drain current VDS 10 VDS – VGS Common source VDS = 10 V Pulse Test 100 25 40 Tc = −55°C 0 1 2 3 Gate-source voltage 4 VGS 0.6 30 0.2 15 0 5 ID = 60 A 0.4 0 (V) 4 8 Drain-source ON resistance RDS (ON) (mΩ) Common source VDS = 10 V Pulse Test 100 Tc = −55°C 100 10 1 0.1 1 16 VGS 20 (V) RDS (ON) – ID 100 25 12 Gate-source voltage |Yfs| – ID Forward transfer admittance ⎪Yfs⎪ (S) 8 1 160 1000 6 Drain-source voltage ID – VGS 200 0 Common source Tc = 25°C Pulse Test 4.25 160 (A) ID 4.5 5 10 80 Drain current 8 4 8 10 Common source Tc = 25°C Pulse Test 10 1 1 100 Drain current ID (A) VGS = 4.5 V 10 10 100 1000 Drain current ID (A) 3 2009-09-29 TK60D08J1 . RDS (ON) − Tc 1000 Common source Pulse Test Drain reverse current IDR (A) ID = 60 A 30 15 16 12 VGS = 4.5V VGS = 10V 4 0 −80 −40 0 40 80 120 160 Common source Tc = 25°C Pulse Test 300 100 10 3 30 5 10 3 1 1 0 0.4 0 0.8 1.2 Drain-source voltage Case temperature Tc (°C) 1.6 VDS 5 Common source VDS = 10 V ID = 1mA Pulse Test Capacitance C (pF) Gate threshold voltage Vth (V) Ciss 1000 Coss Common source VGS = 0 V f = 1 MHz Tc = 25°C Crss 1 10 Drain-source voltage 4 3 2 1 0 −80 100 −40 VDS (V) 0 (V) VDS 150 Drain-source voltage PD (W) Drain power dissipation 100 100 50 80 120 80 120 160 Dynamic input / output characteristics 200 40 40 Case temperature Tc (°C) PD − Tc 0 0 (V) Vth − Tc Capacitance – VDS 10000 100 0.1 2.0 160 80 Case temperature Tc (°C) 16 VDS 60 12 30V 40 60V VDD = 15V 0 8 VGS 20 0 200 20 Common source ID = 60 A Ta = 25°C Pulse Test 4 20 40 60 80 VGS (V) 8 60 30 15 IDR − VDS Gate-source voltage Drain-source ON resistance RDS (ON) (mΩ) 20 0 100 Total gate charge Qg (nC) 4 2009-09-29 TK60D08J1 rth − tw Normalized transient thermal impedance rth (t)/rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 PDM 0.05 t SINGLE PULSE 0.02 T 0.01 0.01 10μ 100μ Duty = t/T Rth (ch-c) = 0.89°C/W 1m 10m Pulse width 100m 1 EAS – Tch SAFE OPERATING AREA 500 ID max (pulse) * EAS (mJ) 1000 100 μs * 1 ms * 100 ID max (continuous) 400 300 Avalanche energy Drain current ID (A) 10 tw (s) 10 DC OPEATION Tc = 25°C 1 ※ Single pulse Ta=25℃ 0.1 200 100 0 25 Curves must be derated linearly with increase in temperature. 50 75 100 125 Channel temperature (initial) VDSS max 150 Tch (°C) 0.01 1 10 Drain-source voltage 100 BVDSS 20 V VDS (V) IAR −5 V VDS VDD Test circuit RG = 1Ω VDD = 25 V, L = 200 μH 5 Wavwform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2009-09-29 TK60D08J1 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. 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No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29