TK62Z60X
MOSFETs
Silicon N-Channel MOS (DTMOS-H)
TK62Z60X
1. Applications
•
Switching Voltage Regulators
2. Features
(1)
Low drain-source on-resistance: RDS(ON) = 0.033 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2)
High-speed switching properties with lower capacitance
(3)
Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 3.1 mA)
3. Packaging and Internal Circuit
1. Drain (Heat sink)
2. Source 1
3. Source 2
4. Gate
Notice: Only use source 2 pin for
gate input signal return. Please
make sure that the main current
flows into the source 1 pin.
TO-247-4L(T)
Start of commercial production
©2016-2017
Toshiba Electronic Devices & Storage Corporation
1
2015-11
2017-12-06
Rev.4.0
TK62Z60X
unless otherwise specified)
4. Absolute Maximum Ratings (Note) (Ta = 25
25
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
61.8
Drain current (pulsed)
(Note 1)
IDP
247
PD
400
W
(Note 2)
EAS
698
mJ
IAR
15.5
A
Reverse drain current (DC)
(Note 1)
IDR
61.8
Reverse drain current (pulsed)
(Note 1)
IDRP
247
Tch
150
Storage temperature
Tstg
-55 to 150
Mounting torque
TOR
0.8
Power dissipation
(Tc = 25)
Single-pulse avalanche energy
Avalanche current
Channel temperature
Note:
A
Nm
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-case thermal resistance
Rth(ch-c)
0.313
/W
Channel-to-ambient thermal resistance
Rth(ch-a)
50
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25 (initial), L = 5.08 mH, RG = 25 Ω, IAR = 15.5 A
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
©2016-2017
Toshiba Electronic Devices & Storage Corporation
2
2017-12-06
Rev.4.0
TK62Z60X
6. Electrical Characteristics
unless otherwise specified)
6.1. Static Characteristics (Ta = 25
25
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Symbol
IGSS
VGS = ±30 V, VDS = 0 V
IDSS
VDS = 600 V, VGS = 0 V
V(BR)DSS
Gate threshold voltage
Drain-source on-resistance
Test Condition
Vth
RDS(ON)
Min
Typ.
Max
Unit
±1
µA
10
ID = 10 mA, VGS = 0 V
600
VDS = 10 V, ID = 3.1 mA
2.5
3.5
VGS = 10 V, ID = 21 A
0.033
0.040
Ω
Min
Typ.
Max
Unit
6500
pF
V
unless otherwise specified)
6.2. Dynamic Characteristics (Ta = 25
25
Characteristics
Input capacitance
Symbol
Ciss
Test Condition
VDS = 300 V, VGS = 0 V, f = 100 kHz
Reverse transfer capacitance
Crss
15
Output capacitance
Coss
140
Effective output capacitance
Co(er)
VDS = 0 to 400 V, VGS = 0 V
200
rg
VDS = OPEN, f = 1 MHz
1.6
Ω
Switching time (rise time)
tr
See Figure 6.2.1
40
ns
Switching time (turn-on time)
ton
80
tf
10
toff
240
120
V/ns
Gate resistance
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
dv/dt
VDD = 0 to 400 V, ID = 61.8 A
VDD ≈ 400 V
VGS = 0 V/10 V
ID = 30.9 A
RL = 13 Ω
RG = 10 Ω
Duty ≤ 1 %, tw = 10 µs
Fig. 6.2.1 Switching Time Test Circuit
unless otherwise specified)
25
6.3. Gate Charge Characteristics (Ta = 25
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Qg
VDD ≈ 400 V, VGS = 10 V, ID = 61.8 A
135
nC
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Qgs1
35
Gate-drain charge
Qgd
50
Typ.
Max
6.4. Source-Drain Characteristics (Ta = 25
unless otherwise specified)
25
Characteristics
Symbol
Test Condition
Min
Unit
Diode forward voltage
VDSF
IDR = 61.8 A, VGS = 0 V
-1.7
V
Reverse recovery time
trr
500
ns
Reverse recovery charge
Qrr
IDR = 30.9 A, VGS = 0 V
-dIDR/dt = 50 A/µs
7
µC
Peak reverse recovery current
Irr
25
A
15
V/ns
Diode dv/dt ruggedness
dv/dt
©2016-2017
Toshiba Electronic Devices & Storage Corporation
IDR = 30.9 A, VGS = 0 V, VDD = 400 V
3
2017-12-06
Rev.4.0
TK62Z60X
7. Marking (Note)
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
©2016-2017
Toshiba Electronic Devices & Storage Corporation
4
2017-12-06
Rev.4.0
TK62Z60X
8. Characteristics Curves (Note)
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 VDSS - Ta
Fig. 8.6 RDS(ON) - ID
©2016-2017
Toshiba Electronic Devices & Storage Corporation
5
2017-12-06
Rev.4.0
TK62Z60X
Fig. 8.7 RDS(ON) - Ta
Fig. 8.8 IDR - VDS
Fig. 8.9 C - VDS
Fig. 8.10 EOSS - VDS
Fig. 8.11 Vth - Ta
Fig. 8.12 Dynamic Input/Output Characteristics
©2016-2017
Toshiba Electronic Devices & Storage Corporation
6
2017-12-06
Rev.4.0
TK62Z60X
Fig. 8.13 rth - tw
(Guaranteed Maximum)
Fig. 8.14 EAS - Tch
(Guaranteed Maximum)
Fig. 8.15 PD - Tc
(Guaranteed Maximum)
Fig. 8.16 Test Circuit/Waveform
©2016-2017
Toshiba Electronic Devices & Storage Corporation
7
2017-12-06
Rev.4.0
TK62Z60X
Fig. 8.17 Safe Operating Area
(Guaranteed Maximum)
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2016-2017
Toshiba Electronic Devices & Storage Corporation
8
2017-12-06
Rev.4.0
TK62Z60X
Package Dimensions
Unit: mm
Weight: 6.35 g (typ.)
Package Name(s)
TOSHIBA: 2-16M2A
Nickname: TO-247-4L(T)
©2016-2017
Toshiba Electronic Devices & Storage Corporation
9
2017-12-06
Rev.4.0
TK62Z60X
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©2016-2017
Toshiba Electronic Devices & Storage Corporation
10
2017-12-06
Rev.4.0