TK9A55DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK9A55DA
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.68 Ω (typ.)
High forward transfer admittance: ⎪Yfs⎪ = 4.7 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)
Enhancement-mode: Vth = 2 to 4 V (VDS = 10 V, ID = 1 mA)
15.0 ± 0.3
A
3.9 3.0
•
•
•
•
2.7 ± 0.2
10 ± 0.3
Ф3.2 ± 0.2
Unit
Drain-source voltage
VDSS
550
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
8.5
Pulse
(Note 1)
IDP
34
Drain power dissipation (Tc = 25°C)
PD
40
W
Single pulse avalanche energy
(Note 2)
EAS
252
mJ
Avalanche current
IAR
8.5
A
Repetitive avalanche energy (Note 3)
EAR
4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
2.54
2.54
1 2 3
4.5 ± 0.2
Rating
2.6 ± 0.1
Symbol
0.64 ± 0.15
Characteristics
0.69 ± 0.15
Ф0.2 M A
13 ± 0.5
Absolute Maximum Ratings (Ta = 25°C)
2.8 MAX.
1.14 ± 0.15
A
1: Gate
2: Drain
3: Source
⎯
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Internal Connection
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
3.125
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
1
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.04 mH, RG = 25 Ω, IAR = 8.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
Start of commercial production
2009-01
1
2013-11-01
TK9A55DA
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
⎯
⎯
±1
μA
Drain cut-off current
IDSS
VDS = 550 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
550
⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 4.3 A
⎯
0.68
0.86
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 4.3 A
1.2
4.7
⎯
S
Input capacitance
Ciss
⎯
1050
⎯
Reverse transfer capacitance
Crss
⎯
5
⎯
Output capacitance
Coss
⎯
100
⎯
⎯
25
⎯
⎯
60
⎯
Drain-source breakdown voltage
Gate threshold voltage
Rise time
VDS = 25 V, VGS = 0 V, f = 1 MHz
Turn-on time
ton
tf
Turn-off time
VOUT
RL = 47 Ω
50 Ω
Switching time
Fall time
ID = 4.3 A
10 V
VGS
0V
tr
VDD ≈ 200 V
toff
Duty ≤ 1%, tw = 10 μs
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 8.5 A
pF
ns
⎯
10
⎯
⎯
75
⎯
⎯
20
⎯
⎯
13
⎯
⎯
7
⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
⎯
⎯
⎯
8.5
A
Pulse drain reverse current
IDRP
⎯
⎯
⎯
34
A
(Note 1)
Forward voltage (diode)
VDSF
IDR = 8.5 A, VGS = 0 V
⎯
⎯
−1.7
V
Reverse recovery time
trr
IDR = 8.5 A, VGS = 0 V,
⎯
1200
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/μs
⎯
11
⎯
μC
Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K9A55DA
Part No.
(or abbreviation code)
Lot No.
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
Note 4
2
2013-11-01
TK9A55DA
ID – VDS
8
10
8
7
10
(A)
COMMON SOURCE
Tc = 25°C
PULSE TEST
6.8
DRAIN CURRENT ID
(A)
DRAIN CURRENT ID
ID – VDS
20
10
6.5
6
6.3
4
6
2
0
VGS = 5.6 V
0
2
4
6
8
DRAIN-SOURCE VOLTAGE
VDS
16
7.5
7.3
12
7
8
6.5
4
0
10
VGS = 6 V
0
(V)
10
20
VDS (V)
DRAIN-SOURCE VOLTAGE
(A)
DRAIN CURRENT ID
12
8
25
4
0
100
0
2
4
Tc = −55 °C
6
8
GATE-SOURCE VOLTAGE
VGS
10
20
16
8
ID = 8.5 A
4
4.3
2.2
0
0
4
8
VGS
20
(V)
RDS (ON) – ID
DRAIN-SOURCE ON RESISTANCE
RDS (ON) (Ω)
FORWARD TRANSFER ADMITTANCE
⎪Yfs⎪ (S)
16
10
Tc = −55 °C
100
1
1
12
GATE-SOURCE VOLTAGE
25
0.1
0.1
(V)
12
(V)
COMMON SOURCE
VDS = 10 V
PULSE TEST
10
VDS
50
COMMON SOURCE
Tc = 25°C
PULSE TEST
⎪Yfs⎪ – ID
100
40
VDS – VGS
COMMON SOURCE
VDS = 15 V
PULSE TEST
16
30
DRAIN-SOURCE VOLTAGE
ID – VGS
20
COMMON SOURCE
Tc = 25°C
PULSE TEST
8
10
DRAIN CURRENT ID
COMMON SOURCE
Tc = 25°C
PULSE TEST
1
0.1
0.1
100
(A)
VGS = 10 V
1
DRAIN CURRENT ID
3
100
10
(A)
2013-11-01
TK9A55DA
RDS (ON) – Tc
IDR – VDS
100
COMMON SOURCE
VGS = 10 V
PULSE TEST
1.8
8.5
4.3
1.2
ID = 2.2 A
0.6
−40
0
40
80
CASE TEMPERATURE
120
Tc
10
1
5
0.1
160
10
3
0
(°C)
-0.3
-0.6
CAPACITANCE – VDS
GATE THRESHOLD VOLTAGE
Vth (V)
Coss
Crss
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
10
3
2
COMMON SOURCE
1 VDS = 10 V
ID = 1 mA
PULSE TEST
0
−80
100
VDS
4
(V)
−40
VDS (V)
DRAIN-SOURCE VOLTAGE
DRAIN POWER DISSIPATION
PD (W)
40
30
20
10
CASE TEMPERATURE
80
120
Tc
160
(°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
50
80
40
CASE TEMPERATURE
PD – Tc
40
0
120
Tc
160
(°C)
500
20
VDS
400
16
200
300
12
VDD = 100 V
400
200
8
COMMON SOURCE
ID = 8.5 A
Tc = 25°C
PULSE TEST
VGS
100
0
0
6
12
18
TOTAL GATE CHARGE
4
0
30
24
Qg
4
(V)
CAPACITANCE
C
(pF)
Ciss
DRAIN-SOURCE VOLTAGE
0
(V)
Vth – Tc
100
0
VDS
-1.5
5
1000
1
0.1
-1.2
-0.9
DRAIN-SOURCE VOLTAGE
10000
10
VGS = 0 V
1
VGS
0
−80
COMMON SOURCE
Tc = 25°C
PULSE TEST
GATE-SOURCE VOLTAGE
2.4
DRAIN REVERSE CURRENT
IDR (A)
DRAIN-SOURCE ON RESISTANCE
RDS (ON) (Ω)
3
(nC)
2013-11-01
TK9A55DA
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
SINGLE PULSE
0.01
T
0.01
Duty = t/T
Rth (ch-c) = 3.125 °C/W
0.001
10μ
100μ
1m
10m
PULSE WIDTH
100m
1
10
tw (s)
EAS – Tch
SAFE OPERATING AREA
100
400
ID max (pulsed) *
AVALANCHE ENERGY
EAS (mJ)
100 μs *
ID max (continuous)
(A)
10
ID
1 ms *
DRAIN CURRENT
1
DC operation
Tc = 25°C
0.1
160
80
50
75
100
125
150
PULSE Tc = 25°C
CHANNEL TEMPERATURE (INITIAL)
Tch(°C)
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
0.001
1
240
0
25
*: SINGLE NONREPETITIVE
0.01
320
VDSS max
10
100
DRAIN-SOURCE VOLTAGE
VDS
BVDSS
15 V
1000
(V)
IAR
−15 V
VDD
TEST CIRCUIT
RG = 25 Ω
VDD = 90 V, L = 6.04 mH
5
VDS
WAVEFORM
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
V
VDSS
DD
⎝
⎠
2013-11-01
TK9A55DA
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your
TOSHIBA sales representative.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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2013-11-01
