TLN108

TLN108(F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN108(F) Lead(Pb)-Free Opto−Electronic Switches Tape And Card Readers Equipment Using Infrared Transmission • • • • TO−18 metal package High radiant intensity: IE = 20 mW/sr (typ.) Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible. Highly reliable due to hermetic seal Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta > 25°C) Pulse forward current Reverse voltage Operating temperature range Storage temperature range (Note 1) Symbol IF ΔIF / °C IFP VR Topr Tstg Rating 100 −1 1 5 −40~125 −55~150 Unit mA mA / °C A V °C °C TOSHIBA 4−5Q2 Weight: 0.33 g (typ.) Pin Connection 1 1. 2. 2 Anode Cathode (case) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≦100μs, repetitive frequency = 100 Hz Markings Product No. (TL omitted) Monthly lot number N108 ･ Month of manufacture (January to December denoted by letters A to L respectively) Year of manufacture (last digit of year of manufacture) Letter color：Red 1 2007-10-01 TLN108(F) Optical And Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Pulse forward voltage Reverse current Radiant intensity Radiant power Capacitance Peak emission wavelength Spectral line half width Half value angle Symbol VF VFP IR IE PO CT λP Δλ θ 1 2 Test Condition IF = 50 mA IFP = 1 A VR = 5 V IF = 50 mA IF = 50 mA VR = 0, f = 1 MHz IF = 50 mA IF = 50 mA IF = 50 mA Min ― ― ― 10 ― ― ― ― ― Typ. 1.3 2.4 ― 20 3 30 940 50 ±8 Max 1.4 ― 10 ― ― ― ― ― ― Unit V V μA mW / sr mW pF nm nm ° Precautions Please be careful of the followings. 1. Soldering temperature: 260°C max Soldering time: 5s max (Soldering must be performed 1.5m from the bottom of the package.) 2. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant intensity falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1. I E (t) PO (t) = I E (0) PO (0) 2 2007-10-01 TLN108(F) IF – Ta 120 1000 IFP – VFP (typ.) IF (mA) 100 500 300 Allowable forward current 80 Pulse forward current IFP (mA) 60 100 40 50 30 20 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 10 IF – V F 100 (typ.) 5 3 Pulse width ≦ 100μs Repetitive frequency = 100Hz Ta = 25°C 50 1 1.0 30 1.2 1.4 1.6 1.8 2.0 2.2 2.4 (mA) Ta = 100°C 75 50 25 10 0 -30 Pulse forward voltage VFP (V) Forward current IF 5 3 IE – IF 300 Pulse width ≦ 100μs Repetitive frequency = 100Hz Ta = 25°C (typ.) Pulse 100 1 0.9 1.0 1.1 1.2 1.3 1.4 1.5 50 Forward voltage VF (V) (mW / sr) Radiant intensity IE 30 Wavelength Characteristic 1.0 IF = 50mA Ta = 25°C 0.8 (typ.) 10 5 3 Relative intensity 0.6 DC 1 0.4 0.5 0.2 0.3 0 900 920 940 960 980 1000 1020 0.1 1 3 10 30 100 300 1000 Wavelength λ (nm) Forward current IF (mA) 3 2007-10-01 TLN108(F) Radiation Pattern (typ.) 10 Relative IE – Ta (typ.) (Ta = 25°C) 5 Relative radiant intensity 3 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 1 0.5 0.3 0 0.2 0.4 0.6 0.8 0.1 -40 -20 0 20 40 60 80 100 120 140 Relative intensity Ambient temperature Ta (°C) IFP – PW 3000 Ta = 25°C 100 Coupling Characteristics With TPS601A(F) Ta = 25°C Allowable pulse forward current 1000 500 50 30 f = 100Hz 11.7 IE = 42mW / sr 23 10 (mA) IFP 300 100 50 30 10kHz 5kHz 2kHz 1kHz 500Hz 200Hz Collector current IC (mA) 5 3 10 3μ 10μ 30μ 100μ 300μ 1m 3m 10m Pulse width PW (s) 1 0.5 0.3 TPS601A(F)･･･IL = 226μA at VCE = 3V E = 0.1mW / cm2 d 0.1 1 3 5 10 30 50 100 Distance d (ｍｍ) 4 2007-10-01 TLN108(F) RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-10-01