TLN115A

TLN115A(F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN115A(F) Lead(Pb)-Free Remote−control Systems • • • • High radiant intensity: IE = 26mW / sr (typ.) Wide half−angle value: θ1/2 = ±21° (typ.) Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible. TPS703(F) pin photodiode with resin to screen out visible light available as detector for remote control Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta > 25°C) Pulse forward current Reverse voltage Power dissipation Operating temperature range Storage temperature range (Note 1) Symbol IF ΔIF / °C IFP VR PD Topr Tstg Rating 100 −1.33 1 5 150 −20~75 −30~85 Unit mA mA / °C A V mW °C °C TOSHIBA Weight: 0.3 g (typ.) 4−6B6 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≦ 100 μs, repetitive frequency = 100 Hz Pin Connection 1 2 1. 2. Anode Cathode Optical And Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Radiant intensity Radiant power Capacitance Peak emission wavelength Spectral line half width Half value angle Symbol VF IR IE PO CT λP Δλ 1 θ 2 Test Condition IF = 100 mA VR = 5 V IF = 50 mA IF = 50 mA VR = 0, f = 1 MHz IF = 50 mA IF = 50 mA IF = 50 mA TLN115A (F) TLN115A (B,F) Min — — 15 19 — — — — — Typ. 1.35 — 26 — 13 20 950 50 ±21 Max 1.5 10 — — — — — — — Unit V μA mW / sr mW pF nm nm ° 1 2007-10-01 TLN115A(F) Precautions Please be careful of the followings. 1. 2. 3. 4. Soldering must be performed under the stopper. Soldering temperature : 260°C max Soldering time : 5 s max When forming the leads, bend each lead under the 2 mm from the body of the device. Soldering must be performed after the leads have been formed. Radiant intensity falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1. IE ( t) PO ( t) = IE ( 0 ) PO ( 0 ) 2 2007-10-01 TLN115A(F) IF – Ta 120 100 Ta = 25°C 50 IF – VF (typ.) IF (mA) 100 (mA) Forward current IF 100 120 30 Allowable forward current 80 60 10 5 3 40 20 0 0 20 40 60 80 140 1 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Ambient temperature Ta (°C) Forward voltage VF (V) ∆VF / ∆Ta – IF -2.4 1000 IFP – VFP (typ.) Forward voltage temperature coefficient ∆VF / ∆Ta (mV / °C) -2.0 500 300 -1.6 Pulse forward current IFP (mA) 100 -1.2 50 30 -0.8 -0.4 1 3 5 10 30 50 100 Forward current IF (mA) 10 5 3 Pulse width ≦100μs Repetitive frequency = 100Hz IFP – PW 3000 Ta = 25°C Ta = 25°C 1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Allowable pulse forward current IFP (mA) Pulse forward voltage VFP (V) 1000 500 300 f = 100Hz 100 50 30 3μ 10μ 30μ 10k 5k 2k 1k 500 200 100μ 300μ 1m 3m 10m Pulse width PW (s) 3 2007-10-01 TLN115A(F) IEP – IFP 1000 Pulse width ≦100μs 500 Repeitive freqency = 100Hz 300 Ta = 25°C (typ.) 1.4 1.2 Relative IE – Ta (typ.) IF = 50mA Pulse radiant intensity IEP (mW / sr) Relative radiant intensity 1.0 0.8 0.6 0.4 0.2 0 -40 100 50 30 10 5 3 1 0.5 0.3 0.1 1 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 3 10 30 100 300 1000 1000 Distance Characteristics 100 Pulse forward current IFP (mA) IEP = 200mW / sr at IFP ~300mA, f = 100Hz, PW = 100μs 100 10 TPS703(F) short circuit current ISC (μA) 1 10 0.1 1 0.01 0.1 0.001 0.01 IE = 20mW / sr at IF ~50mA 0.001 0.01 0.0001 0.1 1 10 Distance d (m) 4 2007-10-01 Converted radiant incidence E (mW / cm2) TLN115A(F) Wavelength Characteristic 1.2 IF = 50mA Ta = 25°C 1.0 (typ.) Radiation Pattern (typ.) (Ta = 25°C) 10° 0° 10° Relative intensity 0.8 30° 0.6 50° 0.4 60° 70° 0.2 80° 0.0 860 90° 40° 20° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 880 900 920 940 960 980 1000 0 0.2 0.4 0.6 0.8 Wavelength λ (nm) Relative intensity 5 2007-10-01 TLN115A(F) RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01