TLN119

TLN119

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TLN119 - Infrared LED GaAs Infrared Emitter - Toshiba Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
TLN119 数据手册
TLN119(F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN119(F) Lead(Pb)-Free Printers, Fax Machines Home Electric Equipment Opto−Electronic Switches • • • φ3.1mm plastic package Radiant intensity: IE = 5mW / sr (typ.) Harf−angle value: θ1 / 2 = ±30°(typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta > 25°C) Pulse forward current Reverse voltage Operating temperature range Storage temperature range Soldering temperature (3 s) (Note 1) Symbol IF Δ IF Rating 60 −0.8 600 5 −25~85 −30~100 260 Unit mA mA / °C mA V °C °C °C / °C IFP VR Topr Tstg Tsol (Note 2) TOSHIBA 4−4E1 Weight: 0.12 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Pin Connection temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the 1. Anode absolute maximum ratings. 1 2 2. Cathode Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≦ 100μs, repetitive frequency = 100Hz Note 2: Soldering must be performed 2mm from the bottom of the package body. Optical And Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Radiant intensity Radiant power Peak emission wavelength Spectral line half width Half value angle Symbol VR IR IE PO λP Δλ IF = 10 mA VR = 5 V IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA TLN119 (F) TLN119 (B,F) Test Condition Min 1.00 ⎯ 2.5 4.2 ⎯ ⎯ ⎯ ⎯ Typ. 1.15 ⎯ 5.0 ⎯ 4.5 945 50 ±30 Max 1.30 10 10.0 10.0 ⎯ ⎯ ⎯ ⎯ Unit V μA mW / sr mW nm nm ° 1 θ 2 1 2007-10-01 TLN119(F) Precautions Please be careful of the followings. 1. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be performed after the leads have been formed. 2. Radiant intensity falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1: 1. I E (t) PO (t) = I E (0) PO (0) 2 2007-10-01 TLN119(F) IF – Ta 80 IFP – PW Ta = 25°C IF (mA) 60 Allowable pulse forward current IFP (mA) 1000 500 300 f = 100Hz Allowable forward current 40 100 50 30 20 10kHz 5kHz 2kHz 1kHz 500Hz 200Hz 0 0 20 40 60 80 100 10 10μ 30μ 100μ 300μ 1m 3m 10m Ambient temperature Ta (°C) Pulse width PW (s) IF – V F 100 (typ.) 1000 IFP – VFP (typ.) 50 500 300 Ta = 75°C 50 (mA) Forward current IF 30 10 5 3 Pulse forward current IFP (mA) 25 0 -25 100 50 30 1 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 10 Forward voltage VF (V) 5 3 Pulse width ≦ 100μs Repetitive frequency = 100Hz Ta = 25°C 1 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Relative 5 3 IF – Ta (typ.) Pulse forward voltage VFP (V) Relative radiant intensity 1 0.5 0.3 0.1 -20 0 20 40 60 80 100 Ambient temperature Ta (°C) 3 2007-10-01 TLN119(F) IE – IF 50 Ta = 25°C 30 (typ.) 1.0 Wavelength Characteristic (typ.) IF = 20mA Ta = 25°C 0.8 Relative intensity Sample 2 Sample 3 Sample 1 10 0.6 (mW / sr) 5 3 0.4 Radiant intensity IE 0.2 1 0 820 860 900 940 980 1020 1060 0.5 0.3 Wavelength λ (nm) 0.1 1 Radiation Pattern 3 5 10 30 50 100 (typ.) (Ta = 25°C) Forward current IF (mA) 20° 30° 40° 50° 60° 70° 80° 90° 10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0 0.2 0.4 0.6 0.8 Relative intensity 4 2007-10-01 TLN119(F) RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-10-01
TLN119
1. 物料型号: - 型号为TLN119(F),由东芝公司(TOSHIBA)生产。

2. 器件简介: - TLN119(F)是一种GaAs红外发光二极管,常用于打印机、传真机、家用电器设备、光电开关等。 - 特点包括3.1mm塑料封装、辐射强度为5mW/sr(典型值)、半值角为±30°(典型值)。

3. 引脚分配: - 引脚1:阳极(Anode) - 引脚2:阴极(Cathode)

4. 参数特性: - 正向电流(IF):60mA - 正向电流降额(AlF/°C):-0.8 mA/°C(Ta >25°C) - 脉冲正向电流(IFP):600mA - 反向电压(VR):5V - 工作温度范围(Topr):-25~85°C - 存储温度范围(Tstg):-30~100°C - 焊接温度(Tsol):260°C(3秒)

5. 功能详解: - 正向电压(VR):在IF=10mA时,范围为1.00~1.30V。 - 反向电流(IR):在VR=5V时,最大10uA。 - 辐射强度(IE):在IF=20mA时,TLN119(F)的辐射强度为2.5~10.0mW/sr。 - 辐射功率(Po):在IF=20mA时,辐射功率为4.5mW。 - 峰值发射波长(Ap):在IF=20mA时,为945nm。 - 光谱线半宽(A):在IF=20mA时,为50nm。 - 半值角(12 8):在IF=20mA时,为±30°。

6. 应用信息: - 该产品适用于一般电子应用,如计算机、个人设备、办公设备、测量设备、工业机器人、家用电器等。不适用于需要极高质量和/或可靠性的设备,或其故障可能导致人员伤亡的设备,如原子能控制仪器、飞机或宇宙飞船仪器、交通信号仪器、燃烧控制仪器、医疗仪器等。

7. 封装信息: - 封装类型为3.1mm塑料封装,重量约为0.12g。
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