TLN225_07

TLN225(F) TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN225(F) Lead(Pb)-Free For Space−Optical−Transmission • • • • • • High radiant power: Po = 18mW(typ.) at IF = 50mA Wide half−angle value: θ1/2 = ±21°(typ.) High−speed response: tr, tf = 30ns(typ.) Light source for remote control Designed for transmission of wireless AV signals Designed for high−speed data transmission Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Pulse forward current Power dissipation Reverse voltage Operating temperature Storage temperature Soldering temperature(5s) Symbol IF IFP PD VR Topr Tstg Tsol Rating 100 1000 (Note 1) 220 4 −25~85 −30~100 260 Unit mA mA mW V °C °C °C TOSHIBA 4−5MA1 Pin Connection Note: Using continuously under heavy loads (e.g. the application of 1. Anode 1 2 high temperature/current/voltage and the significant change in 2. Cathode temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Frequency = 100kHz, duty = 1% Optical And Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Radiant power Radiant intensity Rise time, fall time Cut−off frequency Capacitance Peak emission wavelength Spectral line half width Half value angle Symbol VF IR PO IE tr, tf fc CT λP Δλ IF = 5 0 ｍ A VR = 4 V IF = 50 mA IF = 50 mA IFP = 100 mA, PW = 100 ns IF = 50 mADC +5 mAp−p VR = 0, f = 1 MHz IF = 50 mA IF = 50 mA IF = 50 mA (Note 2) Test Condition Min ― ― 14 ― ― 10 ― 830 ― ― Typ. 1.6 ― 18 40 30 15 110 870 50 ±21 Max 1.8 10 ― ― ― ― ― 900 ― ― Unit V μA mW mW / sr ns MHz pF nm nm ° 1 θ 2 Note 2: Frequency when modulation light power decreases by 3dB from 1 MHz. 1 2007-10-01 TLN225(F) Precautions Please be careful of the followings. 1. Soldering must be performed under the lead stopper. 2. When forming the leads, bend each lead under the stopper without leaving forming stress to the body of the device. Soldering must be performed after the leads have been formed. 3. Radiant power falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. 2 2007-10-01 TLN225(F) IF – Ta 120 100 IF – VF (typ.) 100 85°C Allowable forward current IF (mA) (mA) 10 75°C 50°C 80 -25°C 0°C 25°C Forward current IF 60 1 40 0.1 20 0 0 20 40 60 80 100 120 140 0.01 1 1.2 1.4 1.6 1.8 2 Ambient temperature Ta (°C) Forward voltage VF (V) VF – Ta 1.9 (typ.) 1000 500 300 IFP – VFP (typ.) 1.7 1.6 1.5 1.4 1.3 1.2 1.1 -50 IF = 80mA IF = 50mA Pulse forward current IFP (mA) 1.8 (V) Forward voltage VF 100 50 30 IF = 20mA IF = 5mA 10 5 3 Pulse width ≦ 100μs Repetitive frequency = 100Hz Ta = 25°C 1 2 3 4 5 6 7 -25 0 25 50 75 100 125 1 0 Ambient temperature Ta (°C) Pulse Forward Voltage VFP (V) IFP – PW 20000 10000 5000 3000 Ta = 25°C 1.2 Pulse width = 1ms 1.0 Duty = 10% Relative PO – IFP (typ.) Allowable pulse forward current IFP (mA) Relative radiant power 0.8 1000 500 300 1k 2k 5k 10k f = 100Hz 200 500 0.6 0.4 100 50 30 3μ 0.2 10μ 30μ 100μ 300μ 1m 3m 10m 0 0 200 4000 600 800 1000 Pulse width PW (s) Pulse forward current IFP (nA) 3 2007-10-01 TLN225(F) Relative 10 PO – Ta (typ.) 1000 Distance Characteristics Relative radiant power TPS703(F) short circuit current ISC (μA) IF = 50mA 1 100 10 Pop = 29mW at IFP = 180mA, f = 100kHz, duty = 50% 0.1 -50 -25 0 25 50 75 100 125 Ambient temperature Ta (°C) 1 Po = 16mW at IF = 50mA Wavelength Characteristic (typ.) 1.0 IF = 50mA 0.1 0.01 0.1 1 10 Distance 0.8 d (m) Relative radiant power 0.6 0.4 0.2 0 800 840 880 920 960 1000 Wavelength λ (nm) Radiation Pattern (typ.) Ta = 25°C 4 2 0 Frequency Characteristic (typ.) 20° 30° 40° 50° 60° 70° 80° 90° 10° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 (dB) Response 0.8 0° -2 -4 -6 -8 -10 0.1 0 0.2 0.4 0.6 0.3 0.5 1 3 5 10 30 50 100 Relative radiant power Frequency f (MHz) 4 2007-10-01 TLN225(F) RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-10-01