TLP104
TOSHIBA PHOTOCOUPLER IRED & PHOTO-IC
TLP104
IPM (Intelligent Power Module)
Industrial Inverter
Operate at high ambient temperatures up to 125°C
Unit: mm
The Toshiba TLP104 consists of an infrared LED and integrated high gain,
high-speed photodetectors. The TLP104 is housed in the SO6 package. The
output stage is an open collector type.
The photodetector has an internal Faraday shield that provides a
guaranteed common-mode transient immunity of ±15 kV/μs. TLP104
guarantees minimum and maximum of propagation delay time, switching
speed dispersion, and high common mode transient immunity. Therefore
TLP104 is suitable for isolation interface between IPM (Intelligent Power
Module) in motor control application.
Inverter logic type (Open collector output)
Package type:
Guaranteed performance over temperature:
Power supply voltage: -0.5 to 30 V
Threshold Input Current:
Propagation delay time (tpHL/tpLH):
SO6
-40 to 125°C
JEDEC
―
JEITA
―
TOSHIBA
11-4L1
Weight: 0.08 g(typ.)
IFHL = 5.0 mA (max)
tpHL = 400ns (max)
tpLH = 550ns (max)
Switching Time Dispersion(|tpHL-tpLH|):
Common mode transient immunity
:
±15kV/μs (min)
Isolation voltage
:
3750Vrms (min)
UL-recognized : UL 1577, File No.E67349
cUL-recognized : CSA Component Acceptance Service No.5A
400ns (max)
Pin Configuration (Top View)
1
VCC
6
5
File No.E67349
VDE-approved : EN 60747-5-5, EN 62368-1
(Note 1)
CQC-approved : GB4943.1, GB8898 Thailand Factory
GND
3
SHIELD
Schematic
IF
1+
4
1:ANODE
3:CATHODE
4:GND
5:VO(Output)
6:VCC
ICC
IO
6
5
Note 1 : When a VDE approved type is needed,
VO
3-
please designate the Option(V4).
SHIELD
4
GND
Construction Mechanical Ratings
Truth Table
Input
H
L
VCC
LED
ON
OFF
Output
L
H
Creepage distance
5.0 mm (min)
Clearance distance
5.0 mm (min)
Insulation thickness
0.4 mm (min)
Start of commercial production
2009-10
© 2019
Toshiba Electronic Devices & Storage Corporation
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2019-10-10
TLP104
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
25
mA
ΔIF /°C
-0.67
mA/°C
IFP
50
mA
ΔIFP /°C
-1.34
mA/°C
VR
5
V
Forward Current
Forward Current Derating
(Ta ≥ 110°C)
LED
Pulse Forward Current
(Note 1)
Pulse Forward Current Derating (Ta ≥ 110°C)
Reverse Voltage
Input Power Dissipation
PD
40
mW
Input power Dissipation Derating (Ta ≥ 110°C)
ΔPD/°C
-1.0
mW/°C
(Ta ≤ 125°C)
IO
8
mA
Output Voltage
VO
-0.5 to 30
V
Supply Voltage
VCC
-0.5 to 30
V
PO
80
mW
Detector
Output Current
Output Power Dissipation
ΔPO /°C
-2.0
mW/°C
Operating Temperature Range
Output Power Dissipation Derating (Ta ≥ 110°C)
Topr
-40 to 125
°C
Storage Temperature Range
Tstg
-55 to 125
°C
Lead Soldering Temperature (10 s)
Isolation Voltage (AC,60 s, R.H.≤ 60 %,Ta=25°C)
(Note 2)
Tsol
260
°C
BVs
3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
Note 1: Pulse width ≤ 10 μs, duty=10 %.
Note 2: This device is regarded as a two terminal device: pins 1 and 3 are shorted together, as are pins 4, 5 and 6.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ.
Max
Unit
Input Current , High Level
IFHL
7.5
Input Voltage , Low Level
VFLH
0
-
15
mA
-
0.8
V
Supply Voltage*
VCC
4.5
-
30
V
Operating Temperature
Topr
-40
-
125
°C
* This item denotes operating range, not meaning of recommended operating conditions.
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
© 2019
Toshiba Electronic Devices & Storage Corporation
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TLP104
Electrical Characteristics
(Unless otherwise specified, Ta = −40 to 125°C, VCC =4.5 to 30V)
Characteristic
Symbol
Test
Circuit
VF
Test Condition
Min
Typ.
Max
Unit
―
IF = 10 mA, Ta = 25 °C
1.45
1.61
1.85
V
ΔVF / ΔTa
―
IF = 10 mA
―
-1.8
―
mV /°C
Reverse current
IR
―
VR = 5 V, Ta = 25 °C
―
―
10
μA
Capacitance between
terminals
CT
―
V = 0 V, f = 1 MHz
―
60
―
pF
High level output current
IOH
1
VF = 0.8 V, VO < VCC
―
―
50
μA
Low level output voltage
VOL
2
IF = 10 mA, IO = 2.4 mA
―
0.2
0.6
V
Low level supply current
ICCL
3
IF = 10 mA
―
―
1.3
mA
High level supply current
ICCH
4
IF = 0 mA
―
―
1.3
mA
IO
―
IF = 10 mA, VO = 0.6 V
4.0
―
―
mA
Input current logic LOW output
IFHL
―
IO = 0.75mA, VO < 0.8 V
―
1.0
5
mA
Input voltage logic HIGH output
VFLH
―
IO = 0.75mA, VO > 2.0 V
0.8
―
―
V
Detector
LED
Forward voltage
Forward voltage
temperature coefficient
Output current
*All typical values are at Ta = 25° C, VCC = 5 V unless otherwise specified
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
―
0.8
―
pF
Capacitance input to output
CS
VS = 0 V, f = 1 MHz
Isolation resistance
RS
R.H. ≤ 60 %, VS = 500 V
1012
1014
―
Ω
Isolation voltage
BVS
AC,60 s
3750
―
―
Vrms
© 2019
Toshiba Electronic Devices & Storage Corporation
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2019-10-10
TLP104
Switching Characteristics (Unless otherwise specified, Ta = −40 to 125°C, VCC=15V)
Characteristic
Symbol
Propagation delay time (H→L)
tpHL
Propagation delay time (L→H)
tpLH
Switching Time Dispersion
between ON and OFF
Test
Circuit
Test Condition
Min
Typ.
Max
CL=100 pF
30
150
400
CL=10 pF
―
90
―
CL=100 pF
150
350
550
CL=10 pF
―
100
―
―
―
400
-50
―
450
VCM = 1500 Vp−p, IF = 0 mA
RL = 20 kΩ, Ta = 25 °C
15
―
―
kV/μs
VCM = 1500 Vp−p, IF = 10 mA
RL = 20 kΩ, Ta = 25 °C
−15
―
―
kV/μs
IF = 10 mA,
RL = 20 kΩ
(Note 1)
5
|tpHL−tpLH|
Unit
ns
CL = 100 pF
Propagation Delay Skew (Note 2)
tpLH−tpHL
Common mode transient immunity
at high output level
CMH
Common mode transient Immunity
at low output level
CML
6
*All typical values are at Ta = 25 °C
Note :
A ceramic capacitor (0.1 μF) should be connected from pin 6 (VCC) to pin 4 (GND) to stabilize the operation
of the high gain linear amplifier. Failure to provide the bypass may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.
Note 1: f = 10kHz, duty=10%, input current tr = tf = 5 ns
Note 2: Propagation delay skew is defined as the propagation delay time of the largest or smallest tpLH minus
the largest or smallest tpHL of multiple samples. Evaluations of these samples are conducted under identical
test conditions (supply voltage, input current, temperature, etc.).
TEST CIRCUIT 1: IOH
TEST CIRCUIT 2: VOL
0.1μF
0.1μF
IOH
VF
A
SHIELD
IF
VCC
VO
VCC
SHIELD
TEST CIRCUIT 3: ICCL
IF
VOL IO
↑
V
TEST CIRCUIT 4: ICCH
ICCL
ICCH
A
A
0.1 μF
0.1 μF
VCC
SHIELD
© 2019
Toshiba Electronic Devices & Storage Corporation
VCC
SHIELD
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TLP104
Test Circuit 5: tpHL, tpLH, |tpHL-tpLH|
IF=10mA(P.G)
(f=10kHz , duty=10%, tr=tf=5ns)
IF
50%
P.G.
RL=20kΩ
0.1μF
VO
IF Monitor
tpLH
VCC
CL
SHIELD
15pF*
tpHL
VO
VTHHL=1.5 V
VOL
RIN=100Ω
VTHLH=2.0 V
*: probe and stray capacitance.
P.G.: Pulse generator
Test Circuit 6: CMH, CML
90%
IF
SW
A
RL=20kΩ
→
VCM
10%
0.1 μF
B
tf
tr
VO
・SW B : IF = 0 mA
VCC
CMH
11V
VO
SHIELD
1.0 V
CML
・SW A : IF = 10 mA
+
VCM
1500 V
-
CMH=
© 2019
Toshiba Electronic Devices & Storage Corporation
5
1200(V)
tr(μs)
CML=-
1200(V)
tf(μs)
2019-10-10
TLP104
IF- VF
I F H L - Ta
10
Input current logic LOW output
I FHL (mA)
I n p u t f o r w a r d c u r r e n t I F (mA)
100
Ta=125˚C
100˚C
75˚C
50˚C
25˚C
0˚C
-20˚C
-40˚C
1
0.1
1
1.2
1.4
1.6
1.8
2
2.2
5
4
Vcc = 15 V
Io = 0.75 mA
Vo < 0.8 V
3
2
1
0
-40 -20
I n p u t f o r w a r d v o l t a g e V F (V)
0
20
1
0.8
0.6
0.4
Vcc = 30 V
IF = 10 mA
0
20
40
60
H i g h l e v e l s u p p l y c u r r e n t I CCH (mA)
L o w l e v e l s u p p l y c u r r e n t I CCL (mA)
1.2
-40 -20
1.4
1.2
1
0.8
0.6
0.4
0.2
Vcc = 30 V
0
80 100 120 140
-40 -20
A m b i e n t t e m p e r a t u r e Ta (°C)
0
0.3
0.2
0.1
0
0
20
40
60
80 100 120 140
Ambient temperature
Ta (°C)
H i g h l e v e l o u t p u t c u r r e n t I OH (μA)
V OL (V)
Low level output voltage
0.4
-40 -20
40
60
80 100 120 140
I O H - Ta
IF = 10 mA
Vcc = 15 V
Io = 2.4 mA
0.5
20
A m b i e n t t e m p e r a t u r e Ta (°C)
V O L - Ta
0.6
80 100 120 140
I C C H - Ta
1.4
0
60
A m b i e n t t e m p e r a t u r e Ta (°C)
I C C L - Ta
0.2
40
2
VF = 0.8 V
Vcc = 30 V
Vo = 30 V
1.6
1.2
0.8
0.4
0
-40 -20
0
20
40
60
80 100 120 140
A m b i e n t t e m p e r a t u r e Ta (°C)
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019
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Toshiba Electronic Devices & Storage Corporation
TLP104
tPHL/tPLH/|tPLH-tPHL| - CL
500
IF = 10 mA, Vcc = 15 V
RL = 20kΩ
1600
Propagation delay time, Switching Time
Dispersion between ON and OFF
tPHL, tPLH, |tPLH-tPHL| (ns)
Propagation delay time, Switching Time
Dispersion between ON and OFF
tPHL, tPLH, |tPLH-tPHL| (ns)
2000
t P H L / t P L H / | t P L H - t P H L | - Ta
tPLH
1200
|tPLH -tPHL|
800
400
tPHL
0
0
IF = 10 mA, Vcc = 15 V
CL = 100 pF, RL = 20kΩ
400
tPLH
300
|tPLH –tPHL|
200
tPHL
100
0
-40 -20
100 200 300 400 500 600 700
tPHL/tPLH/|tPLH-tPHL| - IF
Propagation delay time, Switching Time
Dispersion between ON and OFF
tPHL, tPLH, |tPLH-tPHL| (ns)
Propagation delay time, Switching Time
Dispersion between ON and OFF
tPHL, tPLH, |tPLH-tPHL| (ns)
1400
tPLH
300
|tPLH –tPHL|
200
tPHL
100
0
0
5
10
15
IF = 10 mA, CL = 100 pF,
RL = 20kΩ
1200
1000
800
600
400
tPHL
0
-200
0
20
5
Propagation delay time, Switching Time
Dispersion between ON and OFF
tPHL tPLH |tPLH-tPHL| (ns)
Propagation delay time, Switching Time
Dispersion between ON and OFF
tPHL tPLH |tPLH-tPHL| (ns)
tPLH
600
400
|tPLH -tPHL|
200
tPHL
0
0
10
20
30
40
15
20
25
30
tPHL/tPLH/|tPLH-tPHL| - RL
500
800
10
Supply voltage V CC (V)
tPHL/tPLH/|tPLH-tPHL| - RL
IF = 10 mA, Vcc = 15 V
CL = 100 pF
tPLH
|tPLH –tPHL|
200
I n p u t f o r w a r d c u r r e n t I F (mA)
1000
Ta (°C)
tPHL/tPLH/|tPLH-tPHL| - VCC
Vcc = 15 V, CL = 100 pF,
RL = 20kΩ
400
20 40 60 80 100 120 140
Ambient temperature
L o r d c a p a c i t a n c e CL (pF)
500
0
IF = 10 mA, Vcc = 5 V
CL = 10 pF
400
tPLH
300
200
|tPLH -tPHL|
100
tPHL
0
0
50
L o r d r e s i s t a n c e R L (kΩ)
5
10
15
20
L o r d r e s i s t a n c e R L (kΩ)
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
© 2019
Toshiba Electronic Devices & Storage Corporation
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2019-10-10
TLP104
PRECAUTIONS OF SURFACE MOUNTING TYPE PHOTOCOUPLER SOLDERING &
GENERAL STORAGE
Precautions for Soldering
The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of
whether a soldering iron or a reflow soldering method is used.
1) When Using Soldering Reflow
The soldering temperature profile is based on the package surface temperature.
(See the figure shown below.)
An example of a temperature profile when lead (Pb)-free solder is used
Reflow soldering must be performed once or twice.
The mounting should be completed with the interval from the first to the last mountings being 2 weeks.
2) When using soldering Flow
Apply preheating of 150 °C for 60 to 120 seconds.
Mounting condition of 260 °C or less within 10 seconds is recommended.
Flow soldering must be performed once
3) When using soldering Iron
Complete soldering within 10 seconds for lead temperature not exceeding 260 °C or within 3 seconds
not exceeding 350 °C.
Heating by soldering iron must be only once per 1 lead
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Toshiba Electronic Devices & Storage Corporation
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TLP104
(2) Precautions for General Storage
1) Do not store devices at any place where they will be exposed to moisture or direct sunlight.
2) When transportation or storage of devices, follow the cautions indicated on the carton box.
3) The storage area temperature should be kept within a temperature range of 5 °C
to 35 °C, and relative humidity should be maintained at between 45% and 75%.
4) Do not store devices in the presence of harmful (especially corrosive) gases, or in dusty conditions.
5) Use storage areas where there is minimal temperature fluctuation. Because rapid temperature
changes can cause condensation to occur on stored devices, resulting in lead oxidation or corrosion,
as a result, the solderability of the leads will be degraded.
6) When repacking devices, use anti-static containers.
7) Do not apply any external force or load directly to devices while they are in storage.
8) If devices have been stored for more than two years, even though the above conditions have been
followed, it is recommended that solderability of them should be tested before they are used.
© 2019
Toshiba Electronic Devices & Storage Corporation
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2019-10-10
TLP104
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.
Hardware, software and systems described in this document are collectively referred to as “Product”.
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.
• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical
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OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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2019-10-10