TLP105(F)

TLP105 TOSHIBA PHOTOCOUPLER IRED & PHOTO-IC TLP105 Unit: mm Isolated bus drivers High-speed line receivers Microprocessor system interfaces The Toshiba TLP105 consists of an infrared emitting diode optically coupled to a high-gain, high-speed photodetector. The TLP105 is housed in a 6-pin MFSOP. With a totem-pole output, the TLP105 is capable of both sinking and sourcing current. The TLP105 has an internal Faraday shield, which provides a guaranteed common-mode transient immunity of ±10 kV/μs. The TLP105 has a noninverting output. An inverting-output version, the TLP108, is also available.  Buffer logic type (totem-pole output)  Guaranteed Performance Over Temperature: −40 to 100°C  Power Supply Voltage: 4.5 to 20 V  Input Threshold Current: IFLH =1.6 mA (max)  Switching Time (tpLH/tpHL): 250 ns (max)  Common mode transient immunity: ±10 kV/μs  Isolation Voltage: 3750 Vrms  UL-recognized: UL 1577, File No.E67349  cUL-recognized: CSA Component Acceptance Service No.5A Pin Configuration (top View) VCC 1 6 1:ANODE 3:CATHODE 5 4:GND File No.E67349  JEDEC ― JEITA ― TOSHIBA 11−4C2 Weight: 0.09 g (typ.) 3 SHIELD GND 4 5:VO(Output) 6:VCC ICC Schematic VDE-approved: EN 60747-5-5 (Note 1) IF 1＋ Note 1 : When a VDE approved type is needed, please designate the Option(V4). VF 3－ Truth Table LED Tr1 Tr2 Output H L ON OFF ON OFF OFF ON H L Tr1 Tr2 SHIELD Input 6 IO 5 4 VCC VO GND 0.1 µF bypass capacitor must be connected between pin 6 and 4. Start of commercial production © 2019 Toshiba Electronic Devices & Storage Corporation 1 2008-05 2019-05-27 TLP105 Recommended Operating Conditions CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT Input Current, ON IF(ON) 2 ― 10 mA Input Voltage, OFF VF(OFF) 0 ― 0.8 V Supply Voltage* VCC 4.5 ― 20 V Operating Temperature Topr -40 ― 100 °C N ― ― 4 ― Fan-out (TTL Load) * This item denotes operating range, not meaning of recommended operating conditions. Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC Forward Current LED Forward Current Derating (Ta ≥ 83°C) Peak Transient Forward Current (Note1) Reverse Voltage Input Power Dissipation Input Power Dissipation derating (Ta ≥ 83°C) Output Current 1 (Ta ≤ 25°C) DETECTOR Output Current 2 (Ta ≤ 100°C) SYMBOL RATING UNIT IF 20 mA ΔIF/°C -0.48 mA/°C IFPT 1 A VR 5 V PD 40 mW ΔPD/°C -0.95 mW/°C IO1 25/-15 mA IO2 5/-5 mA ΔIO1/°C -0.26/-0.13 mA/°C IOP 50/-50 mA Output Voltage VO -0.5 to 20 V Output Power Dissipation PO 75 mW ΔPO /°C -0.75 mW/°C Output Current Derating (Ta ≥ 25°C) Peak Output Current (Note2) Output Power Dissipation Derating (Ta ≥ 25°C) VCC -0.5 to 20 V Operating Temperature Range Supply Voltage Topr −40 to 100 °C Storage Temperature Range Tstg −55 to 125 °C Lead Solder Temperature (10 s) Isolation Voltage (AC, 60 s, R.H. ≤ 60 %) (Note3) Tsol 260 °C BVs 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≤ 1 μs, 300 pps. Note 2: Pulse width ≤ 5 μs, duty cycle ≤ 0.025 Note 3: Device considered a two terminal device: pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-05-27 TLP105 Electrical Characteristics (Unless otherwise specified, Ta = -40 to 100°C, VCC = 4.5 to 20 V) CHARACTERISTIC SYMBOL TEST CONDITION CIRCUIT MIN TYP. MAX UNIT 1.45 1.57 1.75 V VF ― IF = 10 mA, Ta = 25 °C ΔVF/ΔTa ― IF=10 mA ― -2.0 ― mV/°C Input Reverse Current IR ― VR = 5 V, Ta = 25° C ― ― 10 μA Input Capacitance CT ― V = 0 V, f = 1 MHz, Ta = 25 °C ― 100 - pF Logic Low Output Voltage VOL 1 IOL = 3.5 mA, VF = 0.8 V ― 0.2 0.6 V Logic High Output Voltage VOH 2 IOH = −2.6 mA, VCC = 4.5 V 2.7 4.0 ― IF = 5 mA VCC = 20 V 17.4 19.0 ― Logic Low Supply Current ICCL 3 VF = 0 V VCC = 20 V ― ― 3.0 VCC = 5.5 V ― ― 3.0 Logic High Supply Current ICCH 4 IF = 5 mA VCC = 20 V ― ― 3.0 VCC = 5.5 V ― ― 3.0 IOSL 5 VF = 0 V VCC = VO = 5.5 V 15 80 ― VCC = VO = 20 V 20 90 ― IOSH 6 IF = 5 mA VCC = 5.5 V −5 −15 ― VO = GND VCC = 20 V −10 −20 ― IFLH ― IO = -2.6 mA, VO > 2.4 V ― 0.4 1.6 mA VFHL ― IO = 3.5 mA, VO < 0.4 V 0.8 ― ― V IHYS ― VCC = 5 V ― 0.05 ― mA Input Forward Voltage Temperature Coefficient of Forward Voltage Logic Low Short Circuit Output Current (Note 1) Logic High Short Circuit Output Current (Note 1) Input Current Logic High Output Input Voltage Logic Low Output Input Current Hysteresis V mA mA mA mA *All typical values are at Ta = 25 °C Note 1: Duration of output short circuit time should not exceed 10 ms. Note : A ceramic capacitor (0.1 μA) should be connected from pin 6 to pin 4 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm. Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Test Condition VS = 0 V, f = 1 MHz Isolation resistance RS R.H. ≤ 60 %, VS = 500 V Isolation voltage BVS AC,60 s © 2019 Toshiba Electronic Devices & Storage Corporation 3 Min Typ. Max Unit ― 0.8 ― pF ― Ω ― Vrms 12 1×10 3750 14 10 ― 2019-05-27 TLP105 Switching Characteristics (Unless otherwise specified, Ta = -40 to 100°C,VCC = 4.5 to 20 V) CHARACTERISTIC TEST CIRCUIT SYMBOL Propagation Delay Time to Logic High output Propagation Delay Time to Logic Low output Switching Time Dispersion between ON and OFF CONDITION MIN TYP. MAX UNIT tpLH IF = 0→3 mA 30 150 250 ns tpHL IF = 3→0 mA 30 150 250 ns ― ― 220 ns IF = 0→3 mA , VCC = 5 V ― 30 75 ns IF = 3→0 mA , VCC =5 V ― 30 75 ns -10000 ― ― V/μs 10000 ― ― V/μs 7, 8 ― |tpHL−tpLH| Rise Time (10 – 90 %) tr Fall Time (90 – 10 %) tf Common Mode transient VCM = 1000 Vp-p, IF = 5 mA, CMH Immunity at High Level Output VCC =20 V, Ta = 25 °C 9 Common Mode transient VCM = 1000 Vp-p, IF = 0 mA, CML Immunity at Low Level Output VCC = 20 V, Ta = 25° C *All typical values are at Ta = 25 °C Test Circuit 1: VOL 1 VCC 5 3 SHIELD GND 4 Test Circuit 3: ICCL 1 VCC Test Circuit 2: VOH 6 6 IF 1 → 0.1µF V SHIELD GND Test Circuit 5: IOSL 1 VCC 4 SHIELD SHIELD IF 1 → A VCC VCC 0.1µF 6 V VOH 3 GND 4 ↑ IOH VCC 0.1µF ICCH A 5 ↑ VCC 0.1µF Test Circuit 6: IOSH 6 IF → GND 4 GND 4 Test Circuit 4: ICCH SHIELD 5 3 3 ↑ ICCL 6 5 ↑ VCC VOL IOL 5 3 VCC 1 VCC 0.1µF A 5 ↑ VCC IOSL 3 SHIELD VO © 2019 Toshiba Electronic Devices & Storage Corporation 4 6 GND 4 0.1µF A IOSH VO VCC 2019-05-27 TLP105 Test Circuit 7: Switching Time Test Circuit IF=3 mA (P.G) (f=50 kHz , duty=50%, VCC tr=tf=5Less ns) than 5 ns ) tr=tf= IF VO 5V IF 6 1 VCC 3 SHIELD GND 620 Ω 0.1µF 5 50% tpLH tpHL VOH 4 CL 90% VO 5 kΩ 1.3V VOL tr 10% tf CL is approximately 15 pF which includes probe and stray capacitance. P.G.: Pulse generator Test Circuit 8: Switching Time Test Circuit IF=3 mA (P.G) (f=50 kHz , duty=50%, tr=tf= Less than 5 ns ) tr=tf=5 ns) 6 1 IF VCC 5 3 SHIELD GND 0.1µF 4 IF 50% VO CL VCC tpLH tpHL VOH 90% VO 1.3V VOL tr CL is approximately 15 pF which includes probe and stray capacitance. P.G.: Pulse generator 10% tf Test Circuit 9: Common Mode Transient Immunity Test Circuit IF SW 1 VCC → A B 6 5 3 SHIELD GND 90% 0.1µF VO 10% VCC 4 VCM tf tr CMH ・SW A : IF=5 mA VCM 17V VO １V ・SW B : IF=0 mA CM © 2019 Toshiba Electronic Devices & Storage Corporation 1000Ｖ 5 H = 800(V ) t f ( µs ) CML CM L = 800(V ) t r ( µs ) 2019-05-27 TLP105 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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